JPH08119728A - Dielectric porcelain composition - Google Patents

Dielectric porcelain composition

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Publication number
JPH08119728A
JPH08119728A JP6253345A JP25334594A JPH08119728A JP H08119728 A JPH08119728 A JP H08119728A JP 6253345 A JP6253345 A JP 6253345A JP 25334594 A JP25334594 A JP 25334594A JP H08119728 A JPH08119728 A JP H08119728A
Authority
JP
Japan
Prior art keywords
weight
parts
dielectric
mgo
zno
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6253345A
Other languages
Japanese (ja)
Other versions
JP3250917B2 (en
Inventor
Nobuyoshi Fujikawa
信儀 藤川
Yoshihiro Fujioka
芳博 藤岡
Yasushi Yamaguchi
泰史 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
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Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP25334594A priority Critical patent/JP3250917B2/en
Priority to US08/545,459 priority patent/US5650367A/en
Publication of JPH08119728A publication Critical patent/JPH08119728A/en
Application granted granted Critical
Publication of JP3250917B2 publication Critical patent/JP3250917B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE: To obtain a dielectric porcelain composition having a high relative permittivity and a low dielectric loss at a relatively low baking temperature by using barium titanate as a principal component and including Nb2 O5 , MgO, La2 O3 , MnO and ZnO at specific ratios therein. CONSTITUTION: This dielectric porcelain composition contains 100 pts.wt. BaTiO3 , 0.8-2.5 pts.wt. Nb2 O5 , 0.06-0.70 pt.wt. MgO, 0.005-0.520 pt.wt. La2 O3 , MnO in an amount of 0.01-0.30 pt.wt. expressed in terms of MnCO3 and 0.01-0.5 pt.wt. ZnO at a molar ratio of the Nb2 O5 to the total content of ZnO and MgO within the range of 0.5-2.2. The composition has >=2500 relative permittivity, <=1300 deg.C baking temperature, a temperature change in electrostatic capacity satisfying the X7R of the Electronic Industries Association(EIA) Standards, a dielectric loss as low as <=2.5, a small voltage dependence and >=10<4> MΩ insulation resistance. Thereby, this composition copes with a smaller size and a larger capacity of a dielectric porcelain.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、誘電体磁器組成物に関
するもので、コンデンサ,共振器等に用いられる誘電体
磁器組成物に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric ceramic composition, and more particularly to a dielectric ceramic composition used in capacitors, resonators and the like.

【0002】[0002]

【従来技術】従来、誘電体磁器組成物は、積層セラミッ
クコンデンサ等の材料として使用されている。このよう
な積層セラミックコンデンサは内部電極が形成された誘
電体磁器組成物の生シートを所定容量になるように複数
枚積層した後、一体的に焼成して構成されている。例え
ば、X7R(EIA規格:静電容量の温度特性が−55
℃〜125℃において±15%以内)の積層セラミック
コンデンサに使用される誘電体磁器組成物は、+25℃
における比誘電率が2500以上と高く、かつ、一枚当
たりの生シートの厚みが15μm以下であって、焼成温
度が例えば1300℃以下であることが重要となってく
る。
2. Description of the Related Art Conventionally, dielectric ceramic compositions have been used as materials for laminated ceramic capacitors and the like. Such a monolithic ceramic capacitor is constructed by laminating a plurality of green sheets of a dielectric ceramic composition having internal electrodes so as to have a predetermined capacity, and then integrally firing them. For example, X7R (EIA standard: temperature characteristic of capacitance is -55
The dielectric ceramic composition used for the laminated ceramic capacitor of +/- 15 ° C at + 25 ° C
It is important that the relative dielectric constant is as high as 2500 or more, the thickness of each green sheet is 15 μm or less, and the firing temperature is 1300 ° C. or less.

【0003】即ち、25℃における比誘電率が2500
以上であって、生シートの厚みを15μm以下にするこ
とにより、内部電極間の生シートの厚みや対向面積の極
小化が可能となり、積層セラミックコンデンサの小型化
が達成できる。また、焼成温度を1300℃以下にする
ことにより、内部電極の材料の選択幅が増え、例えば、
高価なPd100%の材料から安価なPd−Agの使用
が可能となる。尚、上記に加え、誘電体磁器組成物とし
ての諸特性である誘電損失tanδ、絶縁抵抗を充分に
考慮しなくてはならず、さらに、誘電損失の交流電圧依
存性が小さいことが望まれる。
That is, the relative dielectric constant at 25 ° C. is 2500
As described above, by setting the thickness of the green sheet to 15 μm or less, the thickness of the green sheet between the internal electrodes and the facing area can be minimized, and the multilayer ceramic capacitor can be downsized. Further, by setting the firing temperature to 1300 ° C. or lower, the selection range of the material of the internal electrodes is increased, and for example,
It is possible to use inexpensive Pd-Ag from expensive 100% Pd material. In addition to the above, the dielectric loss tan δ and the insulation resistance, which are various characteristics of the dielectric ceramic composition, must be fully taken into consideration, and it is further desired that the dielectric loss has a small AC voltage dependency.

【0004】従来、比誘電率を向上させたものとして、
BaTiO3 、Nb2 5 、ZnOを含む誘電体磁器組
成物がすでに提案されている(特開昭59−18162
号公報、特開昭59−18159号公報等参照)。この
ような誘電体磁器組成物によれば、比誘電率を2000
〜3000とすることができる。しかしながら、上述の
誘電体磁器組成物は高い比誘電率を得ることができて
も、誘電損失tanδが大きいため、生シートを薄くす
ることができず、結局、積層コンデンサに使用した場
合、高い比誘電率が得られなかった。
Conventionally, as a device having an improved relative dielectric constant,
A dielectric ceramic composition containing BaTiO 3 , Nb 2 O 5 , and ZnO has already been proposed (Japanese Patent Laid-Open No. 59-18162).
JP, JP-A-59-18159, etc.). Such a dielectric ceramic composition has a relative dielectric constant of 2000.
Can be up to 3000. However, even though the above-mentioned dielectric ceramic composition can obtain a high relative permittivity, the dielectric loss tan δ is large, so that the green sheet cannot be thinned, and when used in a multilayer capacitor, a high relative dielectric constant is eventually obtained. Dielectric constant could not be obtained.

【0005】このように誘電損失tanδを小さくする
ために開発された系として、BaTiO3 ,Nb
2 5 ,MgO,La2 3 を含む誘電体磁器組成物が
すでに提案されている(特公平5−10766号公報参
照)。また、BaTiO3 にNb25 /MgOのモル
比を2.3〜4の範囲になるようにNb2 5 とMgO
を加え、これに希土類を0.1〜0.5重量%添加した
組成物が開示されている(特公昭55−19007号公
報参照)。
As a system developed to reduce the dielectric loss tan δ in this way, BaTiO 3 , Nb is used.
A dielectric ceramic composition containing 2 O 5 , MgO, and La 2 O 3 has already been proposed (see Japanese Patent Publication No. 5-10766). In addition, Nb 2 O 5 and MgO are mixed so that the molar ratio of Nb 2 O 5 / MgO to BaTiO 3 is in the range of 2.3 to 4.
And a rare earth element is added thereto in an amount of 0.1 to 0.5% by weight (see Japanese Patent Publication No. 55-19007).

【0006】[0006]

【発明が解決しようとする問題点】しかしながら、上記
したいずれの誘電体磁器でも、比誘電率が2200程度
以下と小さく小型大容量化に対応できない。また、未だ
誘電損失が大きく、生シートを薄くすることが困難であ
るという問題があった。
However, none of the above-mentioned dielectric ceramics has a small relative permittivity of about 2200 or less and cannot cope with a reduction in size and capacity. Further, there is a problem that the dielectric loss is still large and it is difficult to make the green sheet thin.

【0007】さらに、上記したいずれの誘電体磁器で
も、誘電損失の交流電圧依存性が大きくなり、誘電体の
薄層化に対応することができなくなることが考えられ、
この場合には、コンデンサの小型化、大容量化に対応で
きないという問題があった。
Furthermore, in any of the above-mentioned dielectric ceramics, it is considered that the AC loss dependency of the dielectric loss becomes large and it becomes impossible to cope with the thinning of the dielectric material.
In this case, there is a problem that it is not possible to cope with the miniaturization and the large capacity of the capacitor.

【0008】[0008]

【問題点を解決するための手段】本発明者等は上記問題
点に鑑みて鋭意検討した結果、チタン酸バリウムBaT
iO3 を主成分とし、Nb2 5 、MgO、La
2 3 、MnO、ZnOを所定の組成比で含有するもの
で、ZnOとMgOの合量に対するNb2 5 のモル比
を0.5〜2.2とすることにより、比誘電率が250
0以上で、静電容量の温度変化率がEIA規格のX7R
を満たし、誘電損失が2.5%以下と小さく、交流電圧
を2000V/cm印加した時でも誘電損失が3.0%
以下と交流電圧依存性が小さく、薄層化が可能な誘電体
磁器を得ることができることを見出し、本発明に至っ
た。
[Means for Solving the Problems] As a result of intensive studies made by the present inventors in view of the above problems, barium titanate BaT
iO 3 as a main component, Nb 2 O 5 , MgO, La
2 O 3 , MnO, and ZnO are contained in a predetermined composition ratio, and the relative dielectric constant is 250 by setting the molar ratio of Nb 2 O 5 to the total amount of ZnO and MgO to 0.5 to 2.2.
0 or more, the temperature change rate of capacitance is X7R of EIA standard
Is satisfied, the dielectric loss is as small as 2.5% or less, and the dielectric loss is 3.0% even when an AC voltage of 2000 V / cm is applied.
The inventors have found that the following can provide a dielectric porcelain having a small AC voltage dependency and capable of being made thin, and have completed the present invention.

【0009】即ち、本発明の誘電体磁器は、BaTiO
3 100重量部に対して、Nb2 5 を0.8〜2.5
重量部、MgOを0.06〜0.70重量部、La2
3 を0.005〜0.520重量部、MnOをMnCO
3 に換算して0.01〜0.30重量部、ZnOを0.
1〜0.5重量部含有するとともに、ZnOとMgOの
合量に対するNb2 5 のモル比が0.5〜2.2であ
る。また、BaTiO3 100重量部に対して、SiO
2 およびAl2 3 のうち少なくとも一種を0.05〜
0.50重量部含有することが望ましい。
That is, the dielectric ceramic of the present invention is made of BaTiO 3.
3 Nb 2 O 5 0.8 to 2.5 with respect to 100 parts by weight
Parts by weight, 0.06 to 0.70 parts by weight of MgO, La 2 O
0.005 to 0.520 parts by weight of 3 and MnO to MnCO
0.01 to 0.30 parts by weight in terms of 3 and ZnO to 0.
1 to 0.5 parts by weight, and the molar ratio of Nb 2 O 5 to the total amount of ZnO and MgO is 0.5 to 2.2. Further, for 100 parts by weight of BaTiO 3 , SiO 2
2 and Al 2 O 3 at least one of 0.05 to
It is desirable to contain 0.50 parts by weight.

【0010】本発明において、BaTiO3 100重量
部に対して、Nb2 5 を0.8〜2.5重量部含有し
たのは、0.8重量部未満では、誘電損失が悪化し、温
度特性、焼結性が悪く、また、2.5重量部を越えると
比誘電率が低下し、温度特性が大きく劣化してしまうか
らである。Nb2 5 はBaTiO3 100重量部に対
して1.3〜2.0重量部含有することが望ましい。
In the present invention, 0.8 to 2.5 parts by weight of Nb 2 O 5 is contained with respect to 100 parts by weight of BaTiO 3 when the content is less than 0.8 parts by weight, the dielectric loss is deteriorated and the temperature is lowered. This is because the characteristics and sinterability are poor, and when it exceeds 2.5 parts by weight, the relative dielectric constant is lowered and the temperature characteristics are greatly deteriorated. Nb 2 O 5 is preferably contained in an amount of 1.3 to 2.0 parts by weight based on 100 parts by weight of BaTiO 3 .

【0011】また、MgOを0.06〜0.70重量部
としたのは、0.06重量部未満では比誘電率及び絶縁
抵抗が低下し、温度特性が悪く粒成長し、誘電損失の電
圧依存性が大となってしまうからである。また、0.7
0重量部よりも多いと誘電率が低下し、絶縁抵抗も低下
するからである。MgOは0.1〜0.4重量部である
ことが望ましい。
Further, MgO is set to 0.06 to 0.70 parts by weight because when it is less than 0.06 parts by weight, the relative dielectric constant and the insulation resistance are lowered, the temperature characteristics are deteriorated, grain growth is caused, and the voltage of dielectric loss. This is because the dependency becomes large. Also, 0.7
This is because if the amount is more than 0 parts by weight, the dielectric constant decreases and the insulation resistance also decreases. MgO is preferably 0.1 to 0.4 parts by weight.

【0012】さらに、La2 3 を0.005〜0.5
20重量部としたのは、La2 3が0.005重量部
未満では、比誘電率が低下し、焼結性が悪く、0.52
0重量部を越えると温度特性が劣化するからである。L
2 3 は0.005〜0.2重量部であることが望ま
しい。
Further, 0.002 to 0.5 of La 2 O 3 is added.
The content of 20 parts by weight means that when La 2 O 3 is less than 0.005 parts by weight, the relative dielectric constant is lowered and the sinterability is deteriorated.
This is because if the amount exceeds 0 parts by weight, the temperature characteristics deteriorate. L
a 2 O 3 is desirably 0.005 to 0.2 parts by weight.

【0013】またMnOをMnCO3 換算で0.01〜
0.30重量部としたのは0.01重量部未満では、絶
縁抵抗が低下し、誘電損失及び焼結性が悪化し、0.3
0重量部を越えると比誘電率が低下してしまうからであ
る。MnOはMnCO3 換算で0.04〜0.10重量
部であることが望ましい。
Further, MnO is converted to MnCO 3 in an amount of 0.01 to
The amount of 0.30 parts by weight is less than 0.01 parts by weight, the insulation resistance decreases, the dielectric loss and the sinterability deteriorate, and
This is because if the amount exceeds 0 parts by weight, the relative dielectric constant decreases. MnO is preferably 0.04 to 0.10 parts by weight in terms of MnCO 3 .

【0014】さらに、ZnOを0.10〜0.50重量
部としたのは、0.10重量部未満では、絶縁抵抗が低
下し、誘電損失及び焼結性が悪化し、0.50重量部を
越えると比誘電率が低下し、温度特性が悪化してしまう
からである。ZnOは0.10〜0.30重量部である
ことが望ましい。
Further, ZnO is set to 0.10 to 0.50 parts by weight because the insulation resistance is low when the content is less than 0.10 parts by weight.
This is because the dielectric loss and the sinterability are deteriorated, and when it exceeds 0.50 parts by weight, the relative dielectric constant is decreased and the temperature characteristics are deteriorated. ZnO is preferably 0.10 to 0.30 parts by weight.

【0015】そして、ZnOとMgOの合量に対するN
2 5 のモル比を0.5〜2.2としたのは、モル比
が0.5より小さいと比誘電率が悪化し、温度特性が悪
く、また2.2より大きいと、温度特性が悪く、比誘電
率が低下するからである。本発明では、ZnOとMgO
の合量に対するNb2 5 のモル比を、特に、0.6〜
1.4とすることが望ましい。
N relative to the total amount of ZnO and MgO
The molar ratio of b 2 O 5 is set to 0.5 to 2.2, because when the molar ratio is less than 0.5, the relative dielectric constant is deteriorated and the temperature characteristics are poor. This is because the characteristics are poor and the relative dielectric constant is lowered. In the present invention, ZnO and MgO
The molar ratio of Nb 2 O 5 to the total amount of
It is desirable to set it to 1.4.

【0016】また、BaTiO3 100重量部に対し
て、SiO2 およびAl2 3 のうち少なくとも一種を
0.05〜0.50重量部含有すると、組成によっては
焼成温度をさらに下げるとともに、静電容量および比誘
電率を高めることができる。SiO2 、Al2 3 の上
記作用は、0.05重量部よりも少ない場合にはあまり
顕著でなく、また0.50重量部よりも大きいと逆に比
誘電率が低下する傾向にあるからである。SiO2 およ
びAl2 3 のうち少なくとも一種は、BaTiO3
00重量部に対して0.1〜0.2重量部含有すること
が望ましい。
If at least one of SiO 2 and Al 2 O 3 is contained in an amount of 0.05 to 0.50 parts by weight with respect to 100 parts by weight of BaTiO 3 , the firing temperature is further lowered depending on the composition, and the electrostatic capacity is increased. The capacity and relative permittivity can be increased. The above effects of SiO 2 and Al 2 O 3 are not so remarkable when the amount is less than 0.05 parts by weight, and the relative permittivity tends to decrease when the amount is more than 0.50 parts by weight. Is. At least one of SiO 2 and Al 2 O 3 is BaTiO 3 1
It is desirable to contain 0.1 to 0.2 parts by weight with respect to 00 parts by weight.

【0017】本発明の誘電体磁器は、例えば、固相法ゾ
ルゲル法,しゅう酸法,水熱合成法等の方法により生成
された平均結晶粒径1.0μm以下のBaTiO3 粉末
を主成分として、このBaTiO3 100重量部に対し
て、Nb2 5 、MgO、La2 3 、MnCO3 、S
iO2 、Al2 3 、ZnO各粉末を所定量秤量し、ボ
ールミル等にて20〜48時間湿式粉砕し、乾燥後、有
機バインダー等を所定量添加して、これを所定形状に成
形し、大気中において1200℃〜1300℃で1〜2
時間焼成することにより製造される。また、積層セラミ
ックコンデンサを作製する場合には、上記粉末をスラリ
ー化し、これをドクターブレード等の手法によりシート
状に成形し、そのシート状成形体に適宜Ag−Pdなど
の内部電極を塗布し、これらを複数枚積層し、上記焼成
条件で同時焼成すればよい。
The dielectric porcelain of the present invention is mainly composed of BaTiO 3 powder having an average crystal grain size of 1.0 μm or less, which is produced by a solid phase method sol-gel method, oxalic acid method, hydrothermal synthesis method or the like. , With respect to 100 parts by weight of this BaTiO 3 , Nb 2 O 5 , MgO, La 2 O 3 , MnCO 3 , S
iO 2, Al 2 O 3, a ZnO powders were weighed in predetermined amounts, a ball mill or the like and 20 to 48 hours wet grinding, dried, and adding a predetermined amount of organic binder or the like, and molded into a predetermined shape, 1-2 at 1200 ° C to 1300 ° C in the atmosphere
It is manufactured by firing for a time. In the case of producing a monolithic ceramic capacitor, the above powder is slurried, formed into a sheet by a method such as a doctor blade, and an internal electrode such as Ag-Pd is appropriately applied to the sheet formed body, A plurality of these may be laminated and cofired under the above firing conditions.

【0018】なお、本発明に使用されるNb2 5 、M
gO、La2 3 、MnCO3 、SiO2 、Al
2 3 、ZnOの各粉末の代わりに、Nb,Mg,L
a,Mn,Si,Al,Znの水酸化物、炭酸塩、硝酸
塩、しゅう酸塩、アルコキシド等、焼結温度以下で分解
し、酸化物となるものも用いることができる。
The Nb 2 O 5 and M used in the present invention are
gO, La 2 O 3 , MnCO 3 , SiO 2 , Al
Instead of 2 O 3 and ZnO powders, Nb, Mg, L
It is also possible to use hydroxides, carbonates, nitrates, oxalates, alkoxides, etc. of a, Mn, Si, Al, Zn, which decompose into oxides at a sintering temperature or lower.

【0019】交流電圧依存性を向上するためには、焼結
体の平均結晶粒径dをd<1.0μmに制御することが
好ましい。このように、焼結体の平均結晶粒径dをd<
1.0μmに制御するには、出発原料として平均結晶粒
径1.0μm以下のチタン酸バリウム粉末を用いたり、
長時間湿式粉砕して粉砕後の粒径を0.8μm以下に管
理する他、焼成温度をなるべく低く設定し焼成時間も短
時間とする必要がある。
In order to improve the AC voltage dependency, it is preferable to control the average crystal grain size d of the sintered body to d <1.0 μm. Thus, the average crystal grain size d of the sintered body is d <
To control to 1.0 μm, use barium titanate powder having an average crystal grain size of 1.0 μm or less as a starting material,
It is necessary to perform wet pulverization for a long period of time and control the particle size after pulverization to 0.8 μm or less, and set the firing temperature as low as possible to shorten the firing time.

【0020】[0020]

【作用】本発明の誘電体磁器組成物では、静電容量の温
度特性が−55℃〜125℃の範囲において±15%以
内で、+25℃における比誘電率が2500以上とな
り、グリーンシートの厚みが15μmであっても、誘電
損失が2.5%以下と小さく、交流電圧2000V/cm
における誘電損失が3%以下と小さい値を示すことがで
きる。このため、小型で大容量の積層コンデンサを得る
ことができる。また、焼成温度が1300℃以下となる
ため工業的にも製造しやすく、かつ、内部電極に安価な
銀−パラジウム(Ag/Pd=20/80〜40/6
0)を使用した積層コンデンサなどに使用できる誘電体
磁器が達成される。さらに、誘電体磁器として基本的な
特性である誘電損失が2.5%以下、絶縁抵抗(IR)
が104MΩ以上と充分に満足できる誘電体磁器が達成
される。
In the dielectric ceramic composition of the present invention, the temperature characteristic of capacitance is within ± 15% in the range of -55 ° C to 125 ° C, the relative dielectric constant at + 25 ° C is 2500 or more, and the thickness of the green sheet is Is 15 μm, the dielectric loss is as small as 2.5% or less, and the AC voltage is 2000 V / cm.
The dielectric loss in 3 can be as small as 3% or less. Therefore, a small-sized and large-capacity multilayer capacitor can be obtained. Moreover, since the firing temperature is 1300 ° C. or less, it is easy to manufacture industrially, and inexpensive silver-palladium (Ag / Pd = 20/80 to 40/6) is used for the internal electrodes.
A dielectric porcelain that can be used for a multilayer capacitor using 0) is achieved. Furthermore, the dielectric loss, which is a basic characteristic of dielectric ceramics, is 2.5% or less, and the insulation resistance (IR)
Of 10 4 MΩ or more, which is a satisfactory dielectric ceramic.

【0021】[0021]

【実施例】以下、本発明の実施例を詳細に説明する。EXAMPLES Examples of the present invention will be described in detail below.

【0022】水熱合成法により生成された平均粒径1.
0μm以下のBaTiO3 粉末を主成分として、このB
aTiO3 100重量部に対して、Nb2 5 、Mg
O、La2 3 、MnCO3 、ZnOの各粉末を表1に
示すように秤量し、ボールミルにて20〜48時間湿式
粉砕した後、有機系粘結剤を添加し、しかる後攪拌し、
ドクターブレード法で厚さ15μmのテープ状に成形し
た。このテープを130mm×100mmに裁断し、2
0枚重ね、80℃でホットプレスで積層体を作製する。
Average particle size produced by hydrothermal method 1.
Based on BaTiO 3 powder of 0 μm or less as the main component,
100 parts by weight of aTiO 3 , Nb 2 O 5 , Mg
Each powder of O, La 2 O 3 , MnCO 3 , and ZnO was weighed as shown in Table 1, wet-milled for 20 to 48 hours with a ball mill, added with an organic binder, and then stirred,
It was formed into a tape having a thickness of 15 μm by the doctor blade method. Cut this tape into 130 mm x 100 mm and cut it into 2
A stack is prepared by stacking 0 sheets and hot pressing at 80 ° C.

【0023】[0023]

【表1】 [Table 1]

【0024】尚、内部電極として、Ag系ペースト(A
g/Pd=30/70)を印刷した。この積層体を3.
2mm×1.6mmに裁断し、空気中にて1250〜1
320℃で2時間焼成した。さらに両端面に銀ペースト
による電極を800℃、10分間焼き付けて、測定用試
料とした。
As an internal electrode, an Ag-based paste (A
g / Pd = 30/70) was printed. This laminated body is 3.
Cut into 2 mm x 1.6 mm and 1250 to 1 in air
It was baked at 320 ° C. for 2 hours. Further, electrodes made of silver paste were baked on both end faces at 800 ° C. for 10 minutes to prepare samples for measurement.

【0025】このように形成された試料について、静電
容量および誘電損失を基準温度25℃、周波数1.0k
Hz、測定電圧1.0Vrmsで測定した。また、容量
の温度変化率は、−55〜+125℃の範囲で測定し、
+25℃における容量を基準とした。さらに、絶縁抵抗
は、直流電圧25Vを1分間印加した時を測定した。
The capacitance and the dielectric loss of the sample thus formed were measured at a reference temperature of 25 ° C. and a frequency of 1.0 k.
It was measured at Hz and a measurement voltage of 1.0 Vrms. The temperature change rate of the capacity is measured in the range of −55 to + 125 ° C.,
The capacity at + 25 ° C was used as a standard. Further, the insulation resistance was measured when a DC voltage of 25 V was applied for 1 minute.

【0026】比誘電率は静電容量から逆算した。The relative permittivity was calculated back from the capacitance.

【0027】焼結体の平均粒径は、走査型電子顕微鏡に
て焼結体表面を15000倍で観察し、ラインインター
セプト法にて500以上の粒子を測定し算出した。さら
に、周波数1kHzで2000Vrms/cmの電圧を
印加した時に誘電損失を測定した。以上の結果を表2に
示す。
The average particle size of the sintered body was calculated by observing the surface of the sintered body at 15,000 times with a scanning electron microscope and measuring 500 or more particles by the line intercept method. Further, the dielectric loss was measured when a voltage of 2000 Vrms / cm was applied at a frequency of 1 kHz. Table 2 shows the above results.

【0028】[0028]

【表2】 [Table 2]

【0029】本発明の範囲内の誘電体磁器はいずれも比
誘電率が2500以上と大きく、しかもEIA規格のX
7R特性(−55℃〜125℃の温度範囲で容量変化率
が±15%以内)を満足する。さらに、誘電損失tan
δが2.5%以下と小さく、交流電圧2000Vrms
/cm下でも3.0%以下の損失を示す。さらに絶縁抵
抗(IR)は104 MΩ以上を有する。
All of the dielectric porcelains within the scope of the present invention have a large relative permittivity of 2,500 or more, and moreover, have an EIA standard of X.
7R characteristics (capacity change rate within ± 15% in the temperature range of −55 ° C. to 125 ° C.) are satisfied. Furthermore, the dielectric loss tan
δ is as small as 2.5% or less, AC voltage 2000 Vrms
A loss of 3.0% or less is shown even under / cm. Further, the insulation resistance (IR) is 10 4 MΩ or more.

【0030】表1において、試料番号1〜5は誘電体磁
器組成物の主成分となるBaTiO3 に添加するNb2
5 の添加量を0.7〜2.6重量部まで値を夫々変化
させた。この時、MgO、La2 3 、MnCO3 及び
ZnOの添加量を0.1重量部、0.2重量部、0.1
重量部、0.1〜0.2重量部にした。
In Table 1, sample Nos. 1 to 5 are Nb 2 added to BaTiO 3 which is the main component of the dielectric ceramic composition.
The amount of O 5 added was varied from 0.7 to 2.6 parts by weight. At this time, the amounts of MgO, La 2 O 3 , MnCO 3 and ZnO added were 0.1 parts by weight, 0.2 parts by weight and 0.1 parts by weight, respectively.
Part by weight, 0.1 to 0.2 parts by weight.

【0031】試料番号1(Nb2 5 の添加量:0.7
重量部)では、比誘電率εrが3700と良品になるも
のの、誘電損失tanδが3.4%となってしまう。更
に、温度特性が−25%となってしまう。また、試料番
号2〜4(Nb2 5 の添加量:0.8〜2.5重量
%)では、比誘電率εrが2700〜3600となり、
誘電損失tanδが2.5%以下であり、温度特性が±
13%以内になり、交流電圧2000V/cm印加時の
tanδが3.0%以下で、絶縁抵抗(IR)も4〜6
×104 MΩと良品の範囲となる。即ち、比誘電率εr
が高く、温度特性に優れ、誘電損失tanδが小さく、
さらに誘電損失の交流電圧依存性が小さい誘電体磁器が
達成される。更に、試料番号5(Nb2 5 の添加量:
2.6重量部)では、比誘電率εが2300であり、温
度特性が悪化してしまう。従って、本発明においてはチ
タン酸バリウムBaTiO3 に添加するNb2 5 の重
量は、チタン酸バリウムBaTiO3 100重量部に対
して、0.8〜2.5重量部の範囲とした。
Sample No. 1 (Nb 2 O 5 addition amount: 0.7
(Parts by weight), the relative dielectric constant εr is 3700, which is a good product, but the dielectric loss tan δ is 3.4%. Further, the temperature characteristic becomes -25%. Further, in the sample numbers 2 to 4 (addition amount of Nb 2 O 5 : 0.8 to 2.5% by weight), the relative dielectric constant εr becomes 2700 to 3600,
Dielectric loss tan δ is 2.5% or less, and temperature characteristics are ±
Within 13%, tan δ when an AC voltage of 2000 V / cm is applied is 3.0% or less, and the insulation resistance (IR) is 4 to 6 as well.
The range is × 10 4 MΩ, which is a good product. That is, the relative permittivity εr
High, excellent temperature characteristics, small dielectric loss tan δ,
Further, a dielectric ceramic having a small dielectric loss AC voltage dependency is achieved. Further, Sample No. 5 (addition amount of Nb 2 O 5 :
At 2.6 parts by weight), the relative dielectric constant ε is 2300, and the temperature characteristics deteriorate. Therefore, in the present invention, the weight of Nb 2 O 5 added to barium titanate BaTiO 3 is in the range of 0.8 to 2.5 parts by weight with respect to 100 parts by weight of barium titanate BaTiO 3 .

【0032】試料番号6〜10は誘電体磁器組成物の主
成分となるBaTiO3 に添加するMgOの添加量を
0.05〜0.75重量部まで値を夫々変化させた。こ
の時、Nb2 5 、La2 3 、MnCO3 及びZnO
の添加量をそれぞれ1.8〜2.5重量部、0.2重量
部、0.1重量部、0.1〜0.2重量部にした。
In Sample Nos. 6 to 10, the amount of MgO added to BaTiO 3 , which is the main component of the dielectric ceramic composition, was changed to 0.05 to 0.75 parts by weight. At this time, Nb 2 O 5 , La 2 O 3 , MnCO 3 and ZnO
Were added to 1.8 to 2.5 parts by weight, 0.2 parts by weight, 0.1 parts by weight, and 0.1 to 0.2 parts by weight, respectively.

【0033】試料番号6(MgOの添加量:0.05重
量部)では、交流電圧2000V/cm印加時のtan
δが3.8%になってしまう。また、試料番号7〜9
(MgOの添加量:0.06〜0.70重量部)では、
比誘電率εrが2600〜2900となり、誘電損失t
anδが2.0%以下であり、温度特性が±13%以内
になり、交流電圧2000V/cm印加時のtanδが
2.8%以下で、絶縁抵抗(IR)も3〜5×104
Ωと良品の範囲となる。即ち、比誘電率εrが高く、温
度特性に優れ、誘電損失tanδが小さく、さらに誘電
損失の交流電圧依存性が小さい誘電体磁器が達成され
る。更に、試料番号10(MgOの添加量:0.75重
量部)では、誘電損失tanδが1.8%と良品の範囲
となるものの、比誘電率εrが2100となってしま
う。従って、本発明においてはチタン酸バリウムBaT
iO3 に添加するMgO重量は、チタン酸バリウムBa
TiO3100重量部に対して、0.06〜0.70重
量部の範囲とした。試料番号11〜15は誘電体磁器組
成物の主成分となるBaTiO3 に添加するLa2 3
の添加量を0.004〜0.53重量部まで値を夫々変
化させた。
Sample No. 6 (amount of MgO added: 0.05 parts by weight) has a tan when an AC voltage of 2000 V / cm is applied.
δ becomes 3.8%. In addition, sample numbers 7 to 9
(In the addition amount of MgO: 0.06 to 0.70 parts by weight),
The relative permittivity εr becomes 2600 to 2900, and the dielectric loss t
anδ is 2.0% or less, temperature characteristics are within ± 13%, tanδ when an AC voltage of 2000 V / cm is applied is 2.8% or less, and insulation resistance (IR) is also 3 to 5 × 10 4 M.
Ω and good product range. That is, a dielectric ceramic having a high relative permittivity εr, excellent temperature characteristics, a small dielectric loss tan δ, and a small AC voltage dependency of the dielectric loss can be achieved. Further, in sample No. 10 (amount of MgO added: 0.75 parts by weight), the dielectric loss tan δ is 1.8%, which is in the range of good products, but the relative dielectric constant εr is 2100. Therefore, in the present invention, barium titanate BaT
The weight of MgO added to iO 3 is barium titanate Ba.
The range was 0.06 to 0.70 parts by weight with respect to 100 parts by weight of TiO 3 . Sample Nos. 11 to 15 are La 2 O 3 added to BaTiO 3 which is the main component of the dielectric ceramic composition.
The value was changed from 0.004 to 0.53 parts by weight.

【0034】この時、Nb2 5 、MgO、MnCO3
及びZnOの添加量をそれぞれ1.8重量部、0.2重
量部、0.1重量部、0.2重量部にした。
At this time, Nb 2 O 5 , MgO, MnCO 3
The amounts of ZnO and ZnO added were 1.8 parts by weight, 0.2 parts by weight, 0.1 parts by weight, and 0.2 parts by weight, respectively.

【0035】試料番号11(La2 3 の添加量:0.
004重量部)では、誘電損失tanδが2.4%とな
るものの、比誘電率εrが2400と低くなってしま
う。また、試料番号12〜14(La2 3 の添加量:
0.005〜0.52重量部)では、比誘電率εrが2
800〜3500となり、誘電損失tanδが2.1%
以下であり、温度特性が±11%以内になり、交流電圧
2000V/cm印加時のtanδが2.8%以下で、
絶縁抵抗(IR)も3〜6×104 MΩと良品の範囲と
なる。即ち、比誘電率εrが高く、温度特性に優れ、誘
電損失tanδが小さく、さらに誘電損失の交流電圧依
存性が小さい誘電体磁器が達成される。更に、試料番号
15(La2 3 の添加量:0.53重量部)では、比
誘電率εrが3700、誘電損失tanδが1.8%と
良品の範囲となるものの、温度特性が悪化してしまう。
従って、本発明においてはチタン酸バリウムBaTiO
3 に添加するLa2 3 の重量は、チタン酸バリウムB
aTiO3 100重量部に対して、0.005〜0.5
2重量部の範囲とした。
Sample No. 11 (amount of La 2 O 3 added: 0.
004 parts by weight), the dielectric loss tan δ becomes 2.4%, but the relative dielectric constant εr becomes as low as 2400. Sample Nos. 12 to 14 (amount of La 2 O 3 added:
0.005 to 0.52 parts by weight), the relative permittivity εr is 2
800-3500, dielectric loss tan δ 2.1%
Below, the temperature characteristics are within ± 11%, and the tan δ when an AC voltage of 2000 V / cm is applied is 2.8% or less,
The insulation resistance (IR) is also in the range of good products of 3 to 6 × 10 4 MΩ. That is, a dielectric ceramic having a high relative permittivity εr, excellent temperature characteristics, a small dielectric loss tan δ, and a small AC voltage dependency of the dielectric loss can be achieved. Further, in sample No. 15 (amount of La 2 O 3 added: 0.53 parts by weight), the relative dielectric constant εr was 3700 and the dielectric loss tan δ was 1.8%, which was in the range of good products, but the temperature characteristics deteriorated. Will end up.
Therefore, in the present invention, barium titanate BaTiO 3
Added to 3 weight of La 2 O 3 is barium titanate B
0.005-0.5 with respect to 100 parts by weight of aTiO 3
The range was 2 parts by weight.

【0036】試料番号16〜20は誘電体磁器組成物の
主成分となるBaTiO3 に添加するMnCO3 の添加
量を0.005〜0.31重量部まで値を夫々変化させ
た。
In Sample Nos. 16 to 20, the amount of MnCO 3 added to BaTiO 3 which is the main component of the dielectric ceramic composition was varied from 0.005 to 0.31 parts by weight.

【0037】この時、Nb2 5 、MgO、La2 3
及びZnOの添加量を1.8重量部、0.2重量部、
0.2重量部、0.2重量部にした。
At this time, Nb 2 O 5 , MgO, La 2 O 3
And ZnO added amount of 1.8 parts by weight, 0.2 parts by weight,
The amount was 0.2 parts by weight and 0.2 parts by weight.

【0038】試料番号16(MnCO3 の添加量:0.
005重量部)では、比誘電率εrが3000となるも
のの、誘電損失tanδが2.5%となってしまう。さ
らに絶縁抵抗が8×103 MΩとなる。また、試料番号
17〜19(MnCO3 の添加量:0.01〜0.3重
量%)では、比誘電率εrが2800〜3000とな
り、誘電損失tanδが2.2%以下であり、温度特性
が±7%以内になり、交流電圧2000V/cm印加時
のtanδが3.0%以下で、絶縁抵抗(IR)も2×
104 〜9×104 MΩと良品の範囲となる。即ち、比
誘電率εrが高く、温度特性に優れ、誘電損失tanδ
が小さく、さらに誘電損失の交流電圧依存性が小さい誘
電体磁器が達成される。更に、試料番号20(MnCO
3 の添加量:0.31重量部)では、誘電損失tanδ
が1.4%と良品の範囲となるものの、比誘電率εrが
2200と低くなってしまう。従って、本発明において
はチタン酸バリウムBaTiO3 に添加するMnCO3
の重量は、チタン酸バリウムBaTiO3 100重量部
に対して、0.01〜0.3重量部の範囲とした。
Sample No. 16 (Amount of MnCO 3 added: 0.
005 parts by weight), the relative dielectric constant εr becomes 3000, but the dielectric loss tan δ becomes 2.5%. Furthermore, the insulation resistance becomes 8 × 10 3 MΩ. Moreover, (the addition amount of MnCO 3: 0.01 to 0.3 wt%) Sample No. 17 to 19 in relative dielectric constant εr is next 2800-3000, the dielectric loss tanδ of not more than 2.2%, the temperature characteristic Is within ± 7%, tan δ is 3.0% or less when an AC voltage of 2000 V / cm is applied, and the insulation resistance (IR) is 2 ×.
It is in the range of good products of 10 4 to 9 × 10 4 MΩ. That is, the relative dielectric constant εr is high, the temperature characteristics are excellent, and the dielectric loss tanδ
And a dielectric porcelain in which the dielectric loss is less dependent on the AC voltage is achieved. Furthermore, sample number 20 (MnCO
3 addition amount: 0.31 parts by weight), dielectric loss tan δ
Is 1.4%, which is in the range of non-defective products, but the relative dielectric constant εr is as low as 2200. Therefore, in the present invention, MnCO 3 added to barium titanate BaTiO 3 is used.
Was 0.01 to 0.3 parts by weight with respect to 100 parts by weight of barium titanate BaTiO 3 .

【0039】試料番号21〜26は、誘電体磁器組成物
の主成分となるBaTiO3 に添加するZnOの添加量
を0.1〜0.8重量部まで値を夫々変化させた場合で
ある。この時、Nb2 5 、MgO、La2 3 及びM
nCO3 の添加量をそれぞれ1.8〜2.1重量部、
0.1〜0.15重量部、0.2重量部、0.1重量部
にした。
Sample Nos. 21 to 26 are cases in which the amount of ZnO added to BaTiO 3 which is the main component of the dielectric ceramic composition was changed to 0.1 to 0.8 parts by weight. At this time, Nb 2 O 5 , MgO, La 2 O 3 and M
The amount of nCO 3 added is 1.8 to 2.1 parts by weight,
0.1 to 0.15 part by weight, 0.2 part by weight, and 0.1 part by weight.

【0040】試料番号21〜25(ZnOの添加量:
0.1〜0.5重量部)では、比誘電率εrが2800
〜3200となり、誘電損失tanδが1.8%以下で
あり、温度特性が±14%以内になり、交流電圧200
0V/cm印加時のtanδが2.8%以下で、絶縁抵
抗(IR)も4〜5×104 MΩと良品の範囲となる。
Sample Nos. 21 to 25 (ZnO addition amount:
0.1 to 0.5 parts by weight), the relative dielectric constant εr is 2800.
.About.3200, the dielectric loss tan δ is 1.8% or less, the temperature characteristic is within ± 14%, and the AC voltage is 200%.
The tan δ at the time of applying 0 V / cm is 2.8% or less, and the insulation resistance (IR) is 4 to 5 × 10 4 MΩ.

【0041】即ち、比誘電率εrが高く、温度特性に優
れ、誘電損失tanδが小さく、さらに誘電損失の交流
電圧依存性が小さい誘電体磁器が達成される。また、試
料番号26(ZnOの添加量:0.8重量部)では、誘
電損失tanδが2.0%と良品となるものの、比誘電
率εrが2200と低くなり、温度特性、絶縁抵抗が悪
化する。従って本発明においてはチタン酸バリウムBa
TiO3 に添加するZnO量は、チタン酸バリウムBa
TiO3 100重量部に対して0.1〜0.5重量部の
範囲とした。
That is, a dielectric ceramic having a high relative permittivity εr, excellent temperature characteristics, a small dielectric loss tan δ, and a small AC voltage dependency of the dielectric loss is achieved. Further, in the sample No. 26 (ZnO addition amount: 0.8 parts by weight), the dielectric loss tan δ was 2.0%, which was a good product, but the relative dielectric constant εr was as low as 2200, and the temperature characteristics and insulation resistance were deteriorated. To do. Therefore, in the present invention, barium titanate Ba
The amount of ZnO added to TiO 3 is barium titanate Ba.
The range was 0.1 to 0.5 parts by weight with respect to 100 parts by weight of TiO 3 .

【0042】実施例2 表1の試料No.13の組成に、SiO2 ,Al2 3
末を、表3に示すように添加含有させ、実施例1と同様
に、テープ状に成形した後、このテープを積層し、内部
電極を形成し、積層体を作製した。そして、実施例1と
同様に、各特性を測定し、表4に記した。
Example 2 SiO 2 and Al 2 O 3 powder were added to the composition of sample No. 13 in Table 1 as shown in Table 3 and formed into a tape in the same manner as in Example 1. Then, the tape was laminated to form internal electrodes to prepare a laminated body. Then, each characteristic was measured in the same manner as in Example 1 and is shown in Table 4.

【0043】尚、試料の組成は、BaTiO3 100重
量部に対して、Nb2 5 を1.8重量部、MgOを
0.2重量部、La2 3 0.2重量部、MnOをMn
CO3換算で0.1重量部、ZnOを0.2重量部含有
し、SiO2 ,Al2 3 をBaTiO3 100重量部
に対して所定量含有するものである。
The composition of the sample was such that 1.8 parts by weight of Nb 2 O 5 , 0.2 parts by weight of MgO, 0.2 parts by weight of La 2 O 3 and MnO were added to 100 parts by weight of BaTiO 3. Mn
It contains 0.1 parts by weight of CO 3 , 0.2 parts by weight of ZnO, and a predetermined amount of SiO 2 and Al 2 O 3 with respect to 100 parts by weight of BaTiO 3 .

【0044】[0044]

【表3】 [Table 3]

【0045】[0045]

【表4】 [Table 4]

【0046】これらの表3,4から、SiO2 ,Al2
3 を含有することにより、これらの化合物を含有しな
い場合(試料No.13)よりも焼成温度が低下し、誘電
率が高くなることが判る。
From these Tables 3 and 4, SiO 2 , Al 2
It can be seen that the inclusion of O 3 results in a lower firing temperature and a higher dielectric constant than in the case where these compounds are not included (Sample No. 13).

【0047】[0047]

【発明の効果】以上のように、本発明によれば、X7R
特性を満足し、比誘電率εrが2500以上で、且つ焼
成温度が1300℃以下となる。またその他の諸特性と
して、誘電損失tanδが2.5%以下、絶縁抵抗(I
R)が104 MΩ以上、交流電圧2000V/cm印加
時のtanδが3%以下の誘電体磁器組成物を得ること
ができる。
As described above, according to the present invention, X7R
The characteristics are satisfied, the relative dielectric constant εr is 2500 or more, and the firing temperature is 1300 ° C. or less. As other characteristics, the dielectric loss tan δ is 2.5% or less, the insulation resistance (I
It is possible to obtain a dielectric ceramic composition in which R) is 10 4 MΩ or more and tan δ is 3% or less when an AC voltage of 2000 V / cm is applied.

【0048】これにより、例えば積層セラミックコンデ
ンサを上述の誘電体磁器組成物で構成した場合、温度特
性に優れた小型・大容量のコンデンサを得ることがで
き、しかも焼成温度が1300℃以下となり、積層され
たシート間に内部電極として、安価な銀−パラジウムを
使用することも可能で、安価な積層セラミックコンデン
サを得ることができる。
Thus, for example, when a monolithic ceramic capacitor is composed of the above-mentioned dielectric ceramic composition, a compact and large-capacity capacitor having excellent temperature characteristics can be obtained, and the firing temperature is 1300 ° C. or lower, and Inexpensive silver-palladium can be used as an internal electrode between the formed sheets, and an inexpensive monolithic ceramic capacitor can be obtained.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】BaTiO3 100重量部に対して、Nb
2 5 を0.8〜2.5重量部、MgOを0.06〜
0.70重量部、La2 3 を0.005〜0.520
重量部、MnOをMnCO3 に換算して0.01〜0.
30重量部、ZnOを0.1〜0.5重量部含有すると
ともに、ZnOとMgOの合量に対するNb2 5 のモ
ル比が0.5〜2.2の範囲内にあることを特徴とする
誘電体磁器組成物。
1. Nb based on 100 parts by weight of BaTiO 3.
0.8 to 2.5 parts by weight of 2 O 5 and 0.06 to MgO
0.70 parts by weight, La 2 O 3 and 0.005 to 0.520
0.01 to 0 in terms parts by weight of MnO to MnCO 3.
30 parts by weight and 0.1 to 0.5 parts by weight of ZnO, and the molar ratio of Nb 2 O 5 to the total amount of ZnO and MgO is in the range of 0.5 to 2.2. A dielectric ceramic composition.
【請求項2】BaTiO3 100重量部に対して、Si
2 およびAl2 3のうち少なくとも一種を0.05
〜0.50重量部含有することを特徴とする請求項1記
載の誘電体磁器組成物。
2. Si based on 100 parts by weight of BaTiO 3
0.05 at least one of O 2 and Al 2 O 3
The dielectric ceramic composition according to claim 1, wherein the dielectric ceramic composition is contained in an amount of 0.50 parts by weight.
JP25334594A 1994-01-28 1994-10-19 Dielectric porcelain composition Expired - Fee Related JP3250917B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP25334594A JP3250917B2 (en) 1994-10-19 1994-10-19 Dielectric porcelain composition
US08/545,459 US5650367A (en) 1994-01-28 1995-10-19 Dielectric ceramic composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25334594A JP3250917B2 (en) 1994-10-19 1994-10-19 Dielectric porcelain composition

Publications (2)

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JPH08119728A true JPH08119728A (en) 1996-05-14
JP3250917B2 JP3250917B2 (en) 2002-01-28

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Country Link
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2014010273A1 (en) * 2012-07-10 2016-06-20 株式会社村田製作所 Multilayer ceramic capacitor and manufacturing method thereof
US11227717B2 (en) * 2019-06-17 2022-01-18 Samsung Electro-Mechanics Co., Ltd. Dielectric ceramic composition and multilayer ceramic capacitor comprising same
US11854746B2 (en) 2019-07-24 2023-12-26 Samsung Electro-Mechanics Co., Ltd. Dielectric ceramic composition and multilayer ceramic capacitor comprising the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2014010273A1 (en) * 2012-07-10 2016-06-20 株式会社村田製作所 Multilayer ceramic capacitor and manufacturing method thereof
US11227717B2 (en) * 2019-06-17 2022-01-18 Samsung Electro-Mechanics Co., Ltd. Dielectric ceramic composition and multilayer ceramic capacitor comprising same
CN114823138A (en) * 2019-06-17 2022-07-29 三星电机株式会社 Dielectric ceramic composition and multilayer ceramic capacitor including the same
US11763990B2 (en) 2019-06-17 2023-09-19 Samsung Electro-Mechanics Co., Ltd. Dielectric ceramic composition and multilayer ceramic capacitor comprising same
US11854746B2 (en) 2019-07-24 2023-12-26 Samsung Electro-Mechanics Co., Ltd. Dielectric ceramic composition and multilayer ceramic capacitor comprising the same

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