JPH06227861A - Dielectric ceramic composition - Google Patents

Dielectric ceramic composition

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Publication number
JPH06227861A
JPH06227861A JP5040525A JP4052593A JPH06227861A JP H06227861 A JPH06227861 A JP H06227861A JP 5040525 A JP5040525 A JP 5040525A JP 4052593 A JP4052593 A JP 4052593A JP H06227861 A JPH06227861 A JP H06227861A
Authority
JP
Japan
Prior art keywords
mol
ceramic composition
dielectric ceramic
batio
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5040525A
Other languages
Japanese (ja)
Other versions
JP3259406B2 (en
Inventor
Toshiki Nishiyama
山 俊 樹 西
Yukio Hamachi
地 幸 生 浜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
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Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP04052593A priority Critical patent/JP3259406B2/en
Publication of JPH06227861A publication Critical patent/JPH06227861A/en
Application granted granted Critical
Publication of JP3259406B2 publication Critical patent/JP3259406B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To provide a dielectric ceramic composition having high dielectric constant and small in changing ratio of volume by temperature, further capable of corresponding to the formation of thin layer having <=10mum thickness, free from secondary phase and having uniform structure. CONSTITUTION:The dielectric ceramic composition contains a main component consisting of 92.0-99.4mol% BaTiO3 having <=0.04wt.% content of an alkali metal oxide contained as impurity, 0.3-4.0mol% at least one rare earth oxide (Re2O3) selected from Tb2O3, Dy2O3, Ho2O3 and Er2O3 and 0.3-4.0mol% NiO and a subsidiary component consisting of 0.2-5.0mol% and 0.05-1.0mol% MnO based on 100mol% main component.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は誘電体磁器組成物に関
し、特にたとえば、薄膜対応の積層コンデンサなどの誘
電体材料として用いられる、誘電体磁器組成物に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric ceramic composition, and more particularly to a dielectric ceramic composition used as a dielectric material such as a thin film-capable laminated capacitor.

【0002】[0002]

【従来の技術】一般に、積層コンデンサは、表面に内部
電極ペーストが塗布されたシート状のBaTiO3 を主
成分とする誘電体を複数枚積層するとともに、各シート
の内部電極を交互に並列に一対の外部接続用電極に接続
し、これを焼結して一体化することによって形成され
る。このような積層コンデンサは、近年のエレクトロニ
クスの進展に伴って、広範囲の電子回路に使用され、ま
た、そのサイズもますます小型化される傾向にある。
2. Description of the Related Art In general, a multilayer capacitor is formed by laminating a plurality of sheet-like dielectrics containing BaTiO 3 as a main component and having an internal electrode paste applied on the surface thereof, and alternately forming a pair of internal electrodes of each sheet in parallel. It is formed by connecting to the external connection electrode of and sintering and integrating it. With the progress of electronics in recent years, such a multilayer capacitor is used in a wide range of electronic circuits, and its size tends to be further miniaturized.

【0003】一方、BaTiO3 を主成分とする誘電体
磁器組成物として、従来よりさまざまな種類の組成が提
案されてきた。それらの中で、高誘電率を有し、かつ容
量の温度変化率が小さい誘電体磁器組成物として、特開
昭61−275164号などに開示されているBaTi
3 −Nb2 5 −Co2 3 系組成物が最も一般的で
あり、広範な積層コンデンサの基本的な組成として使用
されている。これらの誘電体磁器組成物では、BaTi
3 にNb2 5 およびCo2 3 が部分的に拡散した
構造からなっており、純粋なBaTiO3 のキュリー点
を有する組成部分と、室温あるいは室温以下にキュリー
点を有する組成部分とが、主としてセラミックス結晶粒
の中心部と周辺部とに存在している複合体、いわゆるc
ore−shellによって、容量の温度変化の平坦性
が得られている。
On the other hand, various types of compositions have been heretofore proposed as a dielectric ceramic composition containing BaTiO 3 as a main component. Among them, BaTi disclosed in Japanese Patent Application Laid-Open No. 61-275164 is disclosed as a dielectric ceramic composition having a high dielectric constant and a small rate of change in capacitance with temperature.
O 3 -Nb 2 O 5 -Co 2 O 3 based compositions are the most common, it is used as a basic composition of a wide multilayer capacitor. In these dielectric ceramic compositions, BaTi
O 3 and Nb 2 O 5 and Co 2 O 3 becomes from partially diffused structure, the composition portion having a Curie point of pure BaTiO 3, and the composition part having a Curie point below room temperature or at room temperature , A composite mainly present in the central portion and the peripheral portion of the ceramic crystal grains, so-called c
The ore-shell provides flatness of the capacitance with temperature change.

【0004】上述のように、BaTiO3 にNb2 5
およびCo2 3 などを部分的に拡散させた構造からな
る誘電体を主成分とする誘電体磁器組成物は、容量の温
度変化率が小さいにもかかわらず、3500〜4000
の高誘電率を示すため、小型大容量用途の積層コンデン
サ材料として広く用いられている。
As mentioned above, BaTiO 3 is added to Nb 2 O 5
A dielectric porcelain composition whose main component is a dielectric having a structure in which Co 2 O 3 and the like are partially diffused is 3500 to 4000 even though the temperature change rate of capacitance is small.
Because of its high dielectric constant, it is widely used as a multilayer capacitor material for small-sized and large-capacity applications.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、これら
の誘電体磁器組成物では、BaTiO3 のTiサイトに
固溶しやすいNbおよびCoを部分的にBaTiO3
拡散させるため、焼成時に掃き出されたTiがBaTi
3 との間で低融点のTiリッチな相、たとえばBaT
4 9 相,Ba4 Ti1330相,Ba6 Ti1740
などで代表される二次相を生成しやすいという性質があ
った。これらの二次相は低誘電率であるため、容量値の
低下が問題となっていた。さらに、これらのTiリッチ
な二次相は針状結晶に成長しやすく、積層コンデンサの
小型大容量化のために素子厚を薄層化すると、時として
素子厚を越え内部電極間にわたって針状結晶が存在する
場合があり、高温における信頼性の点で大きな問題とな
っていた。したがって、これらの従来の誘電体磁器組成
物は、高誘電率を有する組成系ではあるものの、薄層化
には限界があり、今後さらに進行するであろう小型大容
量化には、対応不可能であった。
However, in these dielectric porcelain compositions, Nb and Co, which are likely to form a solid solution in the Ti site of BaTiO 3 , are partially diffused in BaTiO 3 , so that they are swept out during firing. Ti is BaTi
A low-melting-point Ti-rich phase such as BaT with O 3.
The secondary phase represented by the i 4 O 9 phase, the Ba 4 Ti 13 O 30 phase, the Ba 6 Ti 17 O 40 phase and the like was easily generated. Since these secondary phases have a low dielectric constant, there has been a problem of reduction in capacitance value. Furthermore, these Ti-rich secondary phases are likely to grow into acicular crystals, and when the element thickness is made thin to increase the size and capacity of the multilayer capacitor, the acicular crystals sometimes exceed the element thickness and extend between the internal electrodes. May exist, which has been a major problem in terms of reliability at high temperatures. Therefore, although these conventional dielectric porcelain compositions are compositional systems having a high dielectric constant, there is a limit in thinning the layer, and it is impossible to cope with further miniaturization and large capacity that will be further advanced in the future. Met.

【0006】また、これらの現象は、BaTiO3 −N
2 5 −Co2 3 系組成のみならず、BaTiO3
−Nb2 5 −MnO系組成などのNb2 5 を含むB
aTiO3 系組成物一般にあてはまることであった。
Further, these phenomena are caused by BaTiO 3 --N
Not only the b 2 O 5 —Co 2 O 3 system composition but also BaTiO 3
B containing Nb 2 O 5 such as —Nb 2 O 5 —MnO system composition
This was the case for aTiO 3 -based compositions in general.

【0007】したがって、今後さらに進行する小型大容
量化のためには、二次相の存在しない、薄層化に対応可
能な誘電体磁器組成物が必要であった。
Therefore, in order to further reduce the size and increase the capacity in the future, a dielectric porcelain composition which does not have a secondary phase and which can cope with a thin layer has been required.

【0008】それゆえに、この発明の主たる目的は、高
誘電率を有し、容量の温度変化率が小さく、さらに10
μm以下の薄層化に対応可能で、二次相の存在しない組
織の均一な誘電体磁器組成物を提供することである。
Therefore, the main object of the present invention is to have a high dielectric constant and a small rate of change in capacitance with temperature.
It is an object of the present invention to provide a uniform dielectric ceramic composition having a texture that does not have a secondary phase and can be applied to a thin layer having a thickness of not more than μm.

【0009】[0009]

【課題を解決するための手段】この発明は、不純物とし
て含まれるアルカリ金属酸化物の含有量が0.04重量
%以下のBaTiO3 と、Tb2 3 ,Dy2 3 ,H
2 3 ,Er2 3の中から選ばれる少なくとも1種
類の希土類酸化物(Re2 3 )と、NiOとの配合比
が、BaTiO3 92.0〜99.4モル%と、Re2
3 0.3〜4.0モル%と、NiO0.3〜4.0モ
ル%との範囲内にある主成分100モル%に対し、副成
分として、MgO0.2〜5.0モル%と、MnO0.
05〜1.0モル%とを含有する、誘電体磁器組成物で
ある。
According to the present invention, BaTiO 3 containing less than 0.04% by weight of an alkali metal oxide contained as an impurity, Tb 2 O 3 , Dy 2 O 3 and H.
The compounding ratio of at least one rare earth oxide (Re 2 O 3 ) selected from o 2 O 3 and Er 2 O 3 and NiO is BaTiO 3 92.0 to 99.4 mol% and Re 2
O 3 0.3 to 4.0 mol% and, relative to 100 mol of the main ingredient% that ranges between NiO0.3~4.0 mol%, as an auxiliary component, and MgO0.2~5.0 mol% , MnO0.
It is a dielectric ceramic composition containing 05-1.0 mol%.

【0010】副成分として、SiO2 を3.0モル%以
下含有させてもよい。
As an accessory component, SiO 2 may be contained in an amount of 3.0 mol% or less.

【0011】さらに、上記全成分を100重量部とし
て、BaO−SrO−Li2 O−SiO2 を主成分とす
る酸化物ガラスを2.5重量部以下含有させてもよい。
Furthermore, 2.5 parts by weight or less of an oxide glass containing BaO-SrO-Li 2 O-SiO 2 as a main component may be contained in an amount of 100 parts by weight of all the above components.

【0012】[0012]

【発明の効果】この発明によれば、BaTiO3 ,希土
類酸化物およびNiOを主成分とする誘電体材料にMg
O,MnOを添加することによって、3500以上の高
誘電率を有し、容量の温度変化率が小さく、さらに10
μm以下の薄層化に対応可能で、二次相が存在せず、組
織が均一で、高温における信頼性に優れた誘電体磁器組
成物を得ることができる。さらに、SiO2 あるいは酸
化物ガラスを添加することによって、焼成温度の低下お
よび焼成コストの削減が可能である。
According to the present invention, the dielectric material containing BaTiO 3 , rare earth oxide and NiO as the main components is added to Mg.
By adding O and MnO, it has a high dielectric constant of 3500 or more, a small temperature change rate of capacitance, and
It is possible to obtain a dielectric porcelain composition that can be applied to a thin layer of μm or less, has no secondary phase, has a uniform structure, and has excellent reliability at high temperatures. Furthermore, by adding SiO 2 or oxide glass, the firing temperature can be lowered and the firing cost can be reduced.

【0013】したがって、この誘電体磁器組成物を、た
とえば積層セラミックコンデンサの誘電体材料として用
いれば、従来の組成系では不可能であった10μm以下
の薄層化への展開が可能となり、積層セラミックコンデ
ンサのこれまで以上の小型大容量化を容易に達成するこ
とが可能となる。
Therefore, if this dielectric porcelain composition is used as a dielectric material for a monolithic ceramic capacitor, for example, it becomes possible to develop a thin layer having a thickness of 10 μm or less, which is impossible with a conventional composition system. It is possible to easily achieve further miniaturization and larger capacity of the capacitor.

【0014】この発明の上述の目的,その他の目的,特
徴および利点は、以下の実施例の詳細な説明から一層明
らかとなろう。
The above and other objects, features and advantages of the present invention will become more apparent from the detailed description of the embodiments below.

【0015】[0015]

【実施例】出発原料として、不純物として含まれるアル
カリ金属酸化物の含有量が異なるBaTiO3 ,希土類
酸化物,NiO,MgO,MnO,SiO2 ,酸化物ガ
ラスを準備した。これらの原料を表1に示す組成割合と
なるように秤量して、秤量物を得た。なお、試料番号1
〜21については、アルカリ金属酸化物の含有量が0.
03重量%のBaTiO3 を使用し、試料番号22につ
いては、アルカリ金属酸化物の含有量が0.05重量%
のBaTiO3 を使用し、試料番号23については、ア
ルカリ金属酸化物の含有量が0.07重量%のBaTi
3 を使用した。
Example As starting materials, BaTiO 3 , rare earth oxides, NiO, MgO, MnO, SiO 2 and oxide glass having different contents of alkali metal oxides contained as impurities were prepared. These raw materials were weighed so that the composition ratios shown in Table 1 were obtained to obtain weighed products. Sample number 1
Nos. 21 to 21 have an alkali metal oxide content of 0.
03 Using the wt% of BaTiO 3, for sample No. 22, the content of alkali metal oxide is 0.05 wt%
Sample No. 23 containing BaTiO 3 is used and the content of alkali metal oxide is 0.07% by weight of BaTi 3.
The O 3 was used.

【0016】[0016]

【表1】 [Table 1]

【0017】得られた秤量物を分散媒とともに、PSZ
ボールを用いたボールミルで混合し、原料スラリを調製
した。次に、この原料スラリに有機系バインダ,可塑剤
を添加し、十分に攪拌した後、ドクターブレード法によ
ってシート成形して、セラミックグリーンシートを得
た。なお、このときのセラミックグリーンシートの厚さ
は12μmであった。
The weighed material obtained was used together with a dispersion medium for PSZ.
A raw material slurry was prepared by mixing with a ball mill using balls. Next, an organic binder and a plasticizer were added to this raw material slurry, and after sufficiently stirring, sheet forming was carried out by the doctor blade method to obtain a ceramic green sheet. The thickness of the ceramic green sheet at this time was 12 μm.

【0018】次いで、このようにして得られたセラミッ
クグリーンシートの一面に、内部電極形成用導電ペース
トを塗布し、乾燥後複数枚のセラミックグリーンシート
を積層したのち、厚み方向に圧着することによって積層
体を得、この積層体から切り出すことによって、積層コ
ンデンサ生ユニットを得た。このユニットに320℃で
5時間保持の条件で脱バインダを行った後、H2 /N2
の体積比率が3/100の還元雰囲気ガス気流中におい
て、表2に示す温度で2時間焼成し、焼結体を得た。こ
のとき、焼成後のユニットの誘電体素子厚は8μmであ
った。
Next, a conductive paste for forming internal electrodes is applied to one surface of the thus obtained ceramic green sheet, and after drying, a plurality of ceramic green sheets are laminated and then pressure-bonded in the thickness direction to laminate. A body was obtained and cut out from this laminated body to obtain a multilayer capacitor raw unit. After removing the binder from this unit at 320 ° C. for 5 hours, remove H 2 / N 2
In a reducing atmosphere gas stream having a volume ratio of 3/100, it was fired at the temperature shown in Table 2 for 2 hours to obtain a sintered body. At this time, the thickness of the dielectric element of the unit after firing was 8 μm.

【0019】[0019]

【表2】 [Table 2]

【0020】得られた焼結体に、外部電極用銀ペースト
を塗布して、焼き付けることによって、積層セラミック
コンデンサとした。そして、この積層セラミックコンデ
ンサの室温における容量値,誘電損失tanδ,絶縁抵
抗値(IR),容量の温度変化率(TCC)および超加
速ライフ試験におけるMTTF(mean timet
o failure)を測定した。その結果を表2にま
とめて示す。なお、容量値は誘電率εに換算して示す。
Silver paste for external electrodes was applied to the obtained sintered body and baked to obtain a laminated ceramic capacitor. Then, the capacitance value at room temperature of this multilayer ceramic capacitor, the dielectric loss tan δ, the insulation resistance value (IR), the temperature change rate of the capacitance (TCC), and the MTTF (mean time) in the super accelerated life test.
o failure) was measured. The results are summarized in Table 2. The capacitance value is shown in terms of the dielectric constant ε.

【0021】誘電率ε,誘電損失tanδについては、
温度25℃、周波数1kHz、交流電圧1Vの条件で測
定した。また、絶縁抵抗値については、温度25℃にお
いて直流電圧16Vを2分間電圧印加して測定し、その
結果を静電容量値との積、すなわちCR積で示す。さら
に、温度変化率(TCC)については、25℃の容量値
を基準とした時の−55℃,125℃における変化率お
よび−55℃〜+125℃の間において、容量温度変化
率が最大である値の絶対値、すなわち最大変化率につい
て示す。また、MTTFについては、試料数n=18個
について、150℃で電界強度を16.0(kV/m
m)印加したときの絶縁破壊に至るまでの時間から、ワ
イブルプロットによって算出した結果について示してい
る。
Regarding the dielectric constant ε and the dielectric loss tan δ,
The measurement was performed under the conditions of a temperature of 25 ° C., a frequency of 1 kHz and an AC voltage of 1V. The insulation resistance value is measured by applying a DC voltage of 16 V for 2 minutes at a temperature of 25 ° C., and the result is shown as the product of the capacitance value, that is, the CR product. Further, regarding the temperature change rate (TCC), the rate of change in capacity is the maximum between -55 ° C and 125 ° C with reference to the capacity value of 25 ° C, and between -55 ° C and + 125 ° C. The absolute value of the value, that is, the maximum rate of change is shown. As for MTTF, the electric field strength at 150 ° C. was 16.0 (kV / m) for n = 18 samples.
m) The results calculated by Weibull plot from the time until dielectric breakdown when applied are shown.

【0022】表2から明らかなように、この発明にかか
る誘電体磁器組成物を用いた積層セラミックコンデンサ
は、薄層であっても優れた特性を示し、高温における信
頼性において非常に優れている。
As is clear from Table 2, the laminated ceramic capacitor using the dielectric ceramic composition according to the present invention exhibits excellent characteristics even if it is a thin layer, and is very excellent in reliability at high temperatures. .

【0023】この発明において主成分および副成分の範
囲を上述のように限定する理由は次の通りである。
The reason for limiting the ranges of the main component and the sub-components in the present invention as described above is as follows.

【0024】まず、主成分の範囲の限定理由について説
明する。
First, the reason for limiting the range of the main component will be described.

【0025】主成分であるBaTiO3 の構成比率を9
2.0〜99.4モル%とするのは、構成比率が92.
0モル%未満の場合には、希土類元素およびNiOの構
成比率が多くなるため、試料番号4に示すように、絶縁
抵抗値および誘電率の低下が生じ好ましくない。また、
BaTiO3 の構成比率が99.4モル%を超える場合
には、希土類元素およびNiOの添加の効果がなく、試
料番号3に示すように、高温部(キュリー点付近)の容
量温度変化率が大きく(+)側にはずれ好ましくない。
さらに、BaTiO3 中のアルカリ金属酸化物含有量を
0.04重量%以下とするのは、0.04重量%を超え
ると、試料番号22および23に示すように、誘電率の
低下が生じ、実用的でなくなり好ましくない。
The composition ratio of BaTiO 3 as the main component is 9
The composition ratio of 92 to 99.4 mol% is 92.
If it is less than 0 mol%, the composition ratio of the rare earth element and NiO increases, and as shown in Sample No. 4, the insulation resistance value and the dielectric constant decrease, which is not preferable. Also,
When the composition ratio of BaTiO 3 exceeds 99.4 mol%, the effect of the addition of the rare earth element and NiO is not exerted, and as shown in Sample No. 3, the capacity-temperature change rate in the high temperature part (around the Curie point) is large. It is not preferable because it shifts to the (+) side.
Further, the content of the alkali metal oxide in BaTiO 3 is set to 0.04% by weight or less, when the content exceeds 0.04% by weight, the dielectric constant is lowered as shown in sample numbers 22 and 23. It is not practical and is not preferable.

【0026】次に、副成分の範囲の限定理由について説
明する。
Next, the reason for limiting the range of subcomponents will be described.

【0027】MgO添加量を0.2〜5.0モル%とす
るのは、添加量が0.2モル%未満の場合には、試料番
号17に示すように、積層コンデンサの素子厚を薄層化
した場合に、容量温度変化率を示す曲線がシングルピー
ク化する傾向があり、低温部で(−)側にはずれ、キュ
リー点近傍の高温部で(+)側にはずれる傾向があると
ともに、絶縁抵抗値の低下が生じるので好ましくない。
また、添加量が5.0モル%を超える場合には、試料番
号15に示すように、誘電率および絶縁抵抗値の低下が
生じるので好ましくない。
The amount of MgO added is set to 0.2 to 5.0 mol%. When the added amount is less than 0.2 mol%, as shown in Sample No. 17, the element thickness of the multilayer capacitor is reduced. When stratified, the curve showing the capacity temperature change rate tends to have a single peak, deviates to the (-) side at a low temperature portion, and tends to deviate to the (+) side at a high temperature portion near the Curie point, It is not preferable because the insulation resistance value is lowered.
Further, if the addition amount exceeds 5.0 mol%, as shown in sample No. 15, the dielectric constant and the insulation resistance value decrease, which is not preferable.

【0028】MnO添加量を0.05〜1.0モル%と
するのは、添加量が0.05モル%未満の場合には、試
料番号9に示すように、絶縁抵抗値の低下、誘電損失の
増大およびMTTF値の低下が生じるので好ましくな
い。また、添加量が1.0モル%を超える場合には、試
料番号12に示すように、絶縁抵抗値の低下およびMT
TF値の低下が生じるので好ましくない。
The amount of MnO added is set to 0.05 to 1.0 mol%, when the added amount is less than 0.05 mol%, as shown in Sample No. 9, the insulation resistance is lowered and the dielectric constant is reduced. This is not preferable because it causes an increase in loss and a decrease in MTTF value. Further, when the added amount exceeds 1.0 mol%, as shown in Sample No. 12, the insulation resistance decreases and the MT
It is not preferable because the TF value decreases.

【0029】SiO2 添加量を3.0モル%以下とする
のは、添加量が3.0モル%を超える場合には、試料番
号21に示すように、誘電率の低下が生じ好ましくな
い。
It is not preferable to set the added amount of SiO 2 to 3.0 mol% or less, when the added amount exceeds 3.0 mol%, as shown in Sample No. 21, the dielectric constant is lowered.

【0030】最後に、BaO−SrO−Li2 O−Si
2 を主成分とする酸化物ガラスの添加量を2.5重量
部以下とするのは、添加量が2.5重量部を超える場合
には、試料番号19に示すように、SiO2 の場合と同
様に、誘電率の低下が生じるので好ましくない。
[0030] Finally, BaO-SrO-Li 2 O -Si
The addition amount of the oxide glass containing O 2 as a main component is set to 2.5 parts by weight or less because when the addition amount exceeds 2.5 parts by weight, as shown in Sample No. 19, SiO 2 As in the case, the dielectric constant is lowered, which is not preferable.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 不純物として含まれるアルカリ金属酸化
物の含有量が0.04重量%以下のBaTiO3 と、T
2 3 ,Dy2 3 ,Ho2 3 ,Er23 の中か
ら選ばれる少なくとも1種類の希土類酸化物(Re2
3 )と、NiOとの配合比が、 BaTiO3 92.0〜99.4モル%、 Re2 3 0.3〜4.0モル%、および NiO 0.3〜4.0モル% の範囲内にある主成分100モル%に対し、 副成分として、 MgO 0.2〜5.0モル%、および MnO 0.05〜1.0モル% を含有する、誘電体磁器組成物。
1. BaTiO 3 having an alkali metal oxide content of 0.04% by weight or less as an impurity, and T
b 2 O 3 , Dy 2 O 3 , Ho 2 O 3 , and Er 2 O 3 , at least one rare earth oxide (Re 2 O 3)
And 3) blending ratio of NiO is, BaTiO 3 from 92.0 to 99.4 mol%, Re 2 O 3 0.3 to 4.0 mol%, and NiO 0.3 to 4.0 mole% range A dielectric ceramic composition containing 0.2 to 5.0 mol% of MgO and 0.05 to 1.0 mol% of MnO as secondary components with respect to 100 mol% of the main component therein.
【請求項2】 さらに副成分として、SiO2 を3.0
モル%以下含有する、請求項1の誘電体磁器組成物。
2. SiO 2 as an auxiliary component is 3.0
The dielectric ceramic composition according to claim 1, wherein the dielectric ceramic composition is contained in an amount of not more than mol%.
【請求項3】 さらに上記全成分を100重量部とし
て、BaO−SrO−Li2 O−SiO2 を主成分とす
る酸化物ガラスを2.5重量部以下含有する、請求項1
の誘電体磁器組成物。
3. An oxide glass containing BaO—SrO—Li 2 O—SiO 2 as a main component in an amount of 2.5 parts by weight or less based on 100 parts by weight of all the above components.
The dielectric ceramic composition of.
JP04052593A 1993-02-03 1993-02-03 Dielectric porcelain composition Expired - Lifetime JP3259406B2 (en)

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EP0824261A2 (en) * 1996-08-05 1998-02-18 Murata Manufacturing Co., Ltd. Dielectric ceramic composition and monolithic ceramic capacitor using the same
JP2001135544A (en) * 1999-11-01 2001-05-18 Tdk Corp Dielectric porcelain composition and electric component
US6396680B1 (en) 1999-12-10 2002-05-28 Murata Manufacturing Co., Ltd. Monolithic capacitor and process for producing the capacitor
JP2003192433A (en) * 2002-10-16 2003-07-09 Tdk Corp Dielectric ceramic composition and electronic parts
US7638451B2 (en) * 2006-07-20 2009-12-29 Murata Manufacturing Co., Ltd. Dielectric ceramic, method of producing the same, and monolithic ceramic capacitor
JPWO2009037922A1 (en) * 2007-09-19 2011-01-06 株式会社村田製作所 Dielectric ceramic and multilayer ceramic capacitor

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0824261A2 (en) * 1996-08-05 1998-02-18 Murata Manufacturing Co., Ltd. Dielectric ceramic composition and monolithic ceramic capacitor using the same
EP0824261A3 (en) * 1996-08-05 1999-01-27 Murata Manufacturing Co., Ltd. Dielectric ceramic composition and monolithic ceramic capacitor using the same
JP2001135544A (en) * 1999-11-01 2001-05-18 Tdk Corp Dielectric porcelain composition and electric component
US6396680B1 (en) 1999-12-10 2002-05-28 Murata Manufacturing Co., Ltd. Monolithic capacitor and process for producing the capacitor
JP2003192433A (en) * 2002-10-16 2003-07-09 Tdk Corp Dielectric ceramic composition and electronic parts
US7638451B2 (en) * 2006-07-20 2009-12-29 Murata Manufacturing Co., Ltd. Dielectric ceramic, method of producing the same, and monolithic ceramic capacitor
CN102875144A (en) * 2006-07-20 2013-01-16 株式会社村田制作所 Dielectric ceramic, method of producing the same, and monolithic ceramic capacitor
JP5120255B2 (en) * 2006-07-20 2013-01-16 株式会社村田製作所 Dielectric ceramic and manufacturing method thereof, and multilayer ceramic capacitor
JPWO2009037922A1 (en) * 2007-09-19 2011-01-06 株式会社村田製作所 Dielectric ceramic and multilayer ceramic capacitor
JP5182531B2 (en) * 2007-09-19 2013-04-17 株式会社村田製作所 Dielectric ceramic and multilayer ceramic capacitor

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