JPS62262304A - High dielectric constant porcelain compound - Google Patents
High dielectric constant porcelain compoundInfo
- Publication number
- JPS62262304A JPS62262304A JP61104790A JP10479086A JPS62262304A JP S62262304 A JPS62262304 A JP S62262304A JP 61104790 A JP61104790 A JP 61104790A JP 10479086 A JP10479086 A JP 10479086A JP S62262304 A JPS62262304 A JP S62262304A
- Authority
- JP
- Japan
- Prior art keywords
- mol
- dielectric constant
- high dielectric
- composition
- dielectric loss
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052573 porcelain Inorganic materials 0.000 title description 4
- 150000001875 compounds Chemical class 0.000 title 1
- 239000000203 mixture Substances 0.000 claims description 15
- 239000003985 ceramic capacitor Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910052788 barium Inorganic materials 0.000 claims description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- 230000001089 mineralizing effect Effects 0.000 claims description 3
- 229940071182 stannate Drugs 0.000 claims description 3
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Landscapes
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
Ｃ産業上の利用分野〕
本発明は粒界型半導体磁器コンデンサー用の高誘電率磁
器組成物に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a high dielectric constant ceramic composition for grain boundary type semiconductor ceramic capacitors.
従来より、チタン酸バリウム系の磁器組成物は高い４透
電率、小さい誘電体損失を有することが知られているが
、該組成物を粒界型半導体磁器コンデンサーとして使用
し念場合、Ｊｊ誘電率高ければ誘電体損失が太きかっ之
り、温度特性が悪かっ次り、絶縁抵抗が小さい等の問題
点があり、ま比誘電体損失が小さければ誘電率が低い等
の問題点かあっ念。It has been known that barium titanate-based ceramic compositions have high permeability and small dielectric loss. If the relative dielectric loss is high, there will be problems such as high dielectric loss, poor temperature characteristics, and low insulation resistance, and if the relative dielectric loss is low, there will be problems such as low dielectric constant. .
本発明の目的は、粒界型半導体磁器コンデンサーとして
使用した場合、とくに高い誘電率を有しながら小さい誘
電体損失、良好な温度特性、高い絶縁抵抗と、バランス
のとれ九電気特性を有する高誘電率磁器組成物を提供す
ることにある。The purpose of the present invention is to provide a high dielectric material having a particularly high dielectric constant, small dielectric loss, good temperature characteristics, high insulation resistance, and well-balanced electrical characteristics when used as a grain boundary type semiconductor ceramic capacitor. The purpose of the present invention is to provide a high-quality porcelain composition.
本発明の上記目的は、チタン酸バリウム８３〜９４モル
％、スズ酸パリ９ム５〜１１モル％、およびチタン酸ス
トロンチウム１〜６モルチからなる主成分組成物に対し
半導体化剤Ｏ，ＯＳ〜０，２モル優および鉱化剤０．５
〜４モルモル含有することを特徴とする高誘電率磁器組
成物によって、達成される。The above-mentioned object of the present invention is to apply a semiconducting agent O, OS to 0.2 mol and mineralizer 0.5
This is achieved by a high dielectric constant ceramic composition characterized by containing ~4 mol.
本発明で使用する主成分組成物は、チタン酸パリ９ム、
スズ酸バリウムおよびチタン酸ストロンチタムの三者の
組み合せを指し、組成物の製造に際してはこれら各成分
をそのまま使用してもよいし、あるいはＴｉ ＋Ｂａ＋
Ｓｎ＊Ｓｒの酸化物や加熱時に酸化物となる炭酸塩、修
酸塩会適宜、選択使用することもできる。The main component composition used in the present invention is pari-9m titanate,
It refers to a combination of barium stannate and strontitum titanate, and when producing the composition, each of these components may be used as is, or Ti + Ba +
An oxide of Sn*Sr, a carbonate which becomes an oxide upon heating, and an oxalate salt can be selected and used as appropriate.
ま九本発明で云う半導体化剤としては、Ｌａ ＠ Ｃｅ
ｅＰｒｓＮｄ＊Ｓｒｎ＊ＧｄｅＤｙｒＨｏなど稀土類
元素を挙げることができ、これらは酸化物かもしくは加
熱時に酸化物になるものであればよい。The semiconducting agent referred to in the present invention is La@Ce.
Examples include rare earth elements such as ePrsNd*Srn*GdeDyrHo, and these may be oxides or those that become oxides when heated.
さらに本発明で使用する鉱化剤としては、公知のものな
らなんでもよいが、一般的には５ＩＯ２゜Ａｔ２０５．
Ｚ ｎ Ｏなどを挙げることができる。Further, the mineralizer used in the present invention may be any known mineralizer, but generally 5IO2°At205.
ZnO and the like can be mentioned.
上述し比容成分は実質的に前記組成となるよう使用され
、その範囲内では発明の目的を達成できるが、範囲外で
は温度特性、誘電体損失、Ｊ電率絶縁抵抗など本発明の
特性の・シランスが損なわれる。The above-mentioned specific volume components are used so as to have substantially the above composition, and within the range, the purpose of the invention can be achieved, but outside the range, the characteristics of the invention such as temperature characteristics, dielectric loss, and J electric constant insulation resistance may be affected.・Silance is impaired.
すなわち、チタン酸バリウムが９４モモル係越え定場合
は誘電体損失が大きくなり、８３モモル係下回れば誘′
成率が低下する。スズ酸バリウムは１１モル％を越えて
多量となると、誘導率が低下し、ま念５モル係を下回わ
る少量となると、誘１体損失が大きくなる。チタン酸ス
トロンチウムが６モル係を越えて多量となると、絶縁抵
抗が低下し１．０モル係を下回わる少量となれば、温度
特性が損なわれる。また半導体化剤も０．２モル優を越
えると、誘電率が低下し、Ｏ，ＯＳモモルを下回わると
絶縁抵抗が低下する。鉱化剤は０．５モル壬を下回って
も４モル係を上回っても誘′１率が低下する。In other words, when barium titanate exceeds 94 mmol, the dielectric loss becomes large, and when it falls below 83 mmol, the dielectric loss increases.
Growth rate declines. When the amount of barium stannate exceeds 11 mol %, the dielectric constant decreases, and when the amount is less than 5 mol %, the dielectric loss increases. If the amount of strontium titanate exceeds 6 mol, the insulation resistance will decrease, and if the amount is less than 1.0 mol, the temperature characteristics will be impaired. Further, if the amount of the semiconducting agent exceeds 0.2 mol, the dielectric constant decreases, and if the amount falls below 0.2 mol, the insulation resistance decreases. Whether the mineralizing agent is less than 0.5 mol or more than 4 mol, the di'l index decreases.
本発明の高１１電車磁器組成物の製法としてはとくに限
定する必要はなく、一般的には次の製法が実用的である
。すなわち、主成分、半導体化剤および鉱化剤が所定の
組成となるよう各成分の酸化物、炭酸塩等を秤量し、メ
ールミルなどで湿式混合し、しかるのち９００〜１４０
０℃、好ましくは１０００〜１３００℃で仮焼する。さ
らにこの仮焼物にＩリピニルアルコールの如きバインダ
ーを添加し、加圧成型後、１３００〜１５００℃、好ま
しくは１４００〜１４５０℃で中性又は還元性雰囲気下
で焼成すると、高誘電率磁器組成物を得ることができる
。There is no need to particularly limit the manufacturing method of the high-11 train porcelain composition of the present invention, and the following manufacturing method is generally practical. That is, the oxides, carbonates, etc. of each component are weighed so that the main component, semiconducting agent, and mineralizing agent have a predetermined composition, wet-mixed in a mail mill, etc., and then
Calcining is carried out at 0°C, preferably 1000-1300°C. Furthermore, a binder such as I-lipinyl alcohol is added to this calcined product, and after pressure molding, it is fired at 1300 to 1500°C, preferably 1400 to 1450°C in a neutral or reducing atmosphere, resulting in a high dielectric constant porcelain composition. can be obtained.
本発明では該組成物を粒界型半導体磁器コンデンサー用
に用途限定するが、その製法としてはこれまで公知の方
法を採用することができる。In the present invention, the use of the composition is limited to grain boundary type semiconductor ceramic capacitors, but any known method can be used for its production.
すなわち、上記組成物にＣｕｂ、 ８１２０． 、Ｍｎ
Ｏ□等の絶縁化剤を塗布し、空気中で１２００〜１５０
０℃で加熱処理後、銀Ｒ−ストなどを用いて？！極を焼
付けることによって、粒界型半導体磁器コンデンサーを
得ることができる。That is, Cub, 8120. , Mn
Apply an insulating agent such as O
After heat treatment at 0°C, use silver R-st etc.? ! By baking the poles, a grain boundary semiconductor ceramic capacitor can be obtained.
弄ＩＫ示す組成になるよう原料であるＢａＣＯ３，Ｔｉ
Ｏ２゜Ｓ ｎ Ｏ２、Ｓ ｒ Ｃｏ ５ 、半導体化剤
Ｌａ２０．および鉱化剤５ＩＯ２を所定ｉ秤量し、メー
ルばルで湿式混合を行なった。その後、乾燥、粉砕し、
空気雰囲気下で１０００〜１３００℃で仮焼した。この
仮焼物を粉砕したのち、ポリビニールアルコール等の２
１１バインダーを添加混合して均質にし、乾燥、粉砕し
て約１０ Ｑ Ｏｋｇ／１Ｍ２の圧力で円板−！次は角
板状に加圧成形した。こうして加圧成型し友ものを窒素
雰囲気ま九は窒素と水素の混合雰囲気下で１４００〜１
４５０℃で焼成しｆｃ、次いでこの焼成物にＣｕＯ，Ｂ
ｉ２Ｏ，、ＭｎＯ２などのうち少なくとも１種を塗布し
、空気雰囲気下で１２００〜１５００℃で拡散処理を行
なった。この表面に銀ペーストを塗布し、８００℃で焼
付けることによって電極を形成した。The raw materials BaCO3, Ti are adjusted so that the composition shows IK.
O2°S n O2, S r Co 5 , semiconducting agent La20. A predetermined amount of mineralizer 5IO2 was weighed and wet mixed in a mail barrel. Then, dry, crush,
Calcining was performed at 1000 to 1300°C in an air atmosphere. After crushing this calcined material, 2
11 Binder is added and mixed to make it homogeneous, dried, and crushed to form a disk under a pressure of about 10 Q Okg/1M2! Next, it was pressure-formed into a square plate shape. In this way, the pressure molded product was molded in a nitrogen atmosphere with a temperature of 1,400 to 1
It is fired at 450°C, then CuO, B is added to the fired product.
At least one of i2O, MnO2, etc. was applied, and a diffusion treatment was performed at 1200 to 1500°C in an air atmosphere. Silver paste was applied to this surface and baked at 800°C to form electrodes.
賢２に電気特性、温度特性の結果を示す。同表において
誘１１Ｌ率（ε、）、誘電体損失（−δ）は温度を２５
℃とし周波数１ ｋＨｚで測定し比値である。容量温度
変化率（Ｔ、Ｃ）は２５℃を基準として、−２５℃と８
５℃の値の変化で評価し之。また、絶縁抵抗（ＩＲ）は
印加電圧を５０Ｖの直流電圧とし九ときの値である。Ken2 shows the results of electrical characteristics and temperature characteristics. In the same table, the dielectric constant (ε, ) and dielectric loss (-δ) are determined by increasing the temperature by 25
It is a ratio value measured at a temperature of 1 kHz and a frequency of 1 kHz. The capacitance temperature change rate (T, C) is -25℃ and 8℃ with 25℃ as the standard.
Evaluated by change in value of 5°C. Further, the insulation resistance (IR) has a value when the applied voltage is 50 V DC voltage.
本発明の磁器組成物は５６０００以上と高い誹電率を示
し、粒界型半導体磁器コンデンサーとじ念場合、１．４
〜３．８係と小さい誘電体損失、６２００〜５５６００
ＭΩ・譚の高い？、縁低抵抗そして良好な温度特性を有
するため、たとえば音響機器や通信機器など粒界半導体
磁器コンデンサー用としてバランスのとれ比特性を発揮
することができる。The ceramic composition of the present invention exhibits a high electrical dissipation rate of 56,000 or more, and in the case of grain boundary type semiconductor ceramic capacitors, it is 1.4
~3.8 ratio and small dielectric loss, 6200~55600
MΩ・Tan high? Because it has low edge resistance and good temperature characteristics, it can exhibit well-balanced ratio characteristics for use in grain boundary semiconductor ceramic capacitors, for example in audio equipment and communication equipment.
Claims (1)
５〜１１モル％、およびチタン酸ストロンチウム１〜６
モル％の組合せからなる主成分組成物に対し半導体化剤
０．０５〜０．２モル％および鉱化剤０．５〜４モル％
を含有することを特徴とする粒界型半導体磁器コンデン
サー用の高誘電率磁器組成物Barium titanate 83-94 mol%, barium stannate 5-11 mol%, and strontium titanate 1-6
Semiconducting agent 0.05-0.2 mol% and mineralizing agent 0.5-4 mol% based on the main component composition consisting of a combination of mol%
A high dielectric constant ceramic composition for a grain boundary type semiconductor ceramic capacitor, characterized by containing
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61104790A JPH0687365B2 (en) | 1986-05-09 | 1986-05-09 | High dielectric constant porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61104790A JPH0687365B2 (en) | 1986-05-09 | 1986-05-09 | High dielectric constant porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62262304A true JPS62262304A (en) | 1987-11-14 |
| JPH0687365B2 JPH0687365B2 (en) | 1994-11-02 |
Family
ID=14390252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61104790A Expired - Lifetime JPH0687365B2 (en) | 1986-05-09 | 1986-05-09 | High dielectric constant porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0687365B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01104172A (en) * | 1987-10-16 | 1989-04-21 | Agency Of Ind Science & Technol | Stabilization of enzyme |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57167617A (en) * | 1981-04-08 | 1982-10-15 | Murata Manufacturing Co | Grain boundary insulating type semiconductor porcelain composition |
-
1986
- 1986-05-09 JP JP61104790A patent/JPH0687365B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57167617A (en) * | 1981-04-08 | 1982-10-15 | Murata Manufacturing Co | Grain boundary insulating type semiconductor porcelain composition |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01104172A (en) * | 1987-10-16 | 1989-04-21 | Agency Of Ind Science & Technol | Stabilization of enzyme |
| JPH0351398B2 (en) * | 1987-10-16 | 1991-08-06 | Kogyo Gijutsuin |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0687365B2 (en) | 1994-11-02 |
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