JPS59218735A - 絶縁膜および絶縁膜−半導体界面の製造方法 - Google Patents

絶縁膜および絶縁膜−半導体界面の製造方法

Info

Publication number
JPS59218735A
JPS59218735A JP58163048A JP16304883A JPS59218735A JP S59218735 A JPS59218735 A JP S59218735A JP 58163048 A JP58163048 A JP 58163048A JP 16304883 A JP16304883 A JP 16304883A JP S59218735 A JPS59218735 A JP S59218735A
Authority
JP
Japan
Prior art keywords
gas
insulating film
cf2cl2
case
interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58163048A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6361771B2 (enExample
Inventor
Yutaka Hayashi
小林清彦
Iwao Hamaguchi
浜口巌
Kiyohiko Kobayashi
林豊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58163048A priority Critical patent/JPS59218735A/ja
Publication of JPS59218735A publication Critical patent/JPS59218735A/ja
Publication of JPS6361771B2 publication Critical patent/JPS6361771B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Formation Of Insulating Films (AREA)
JP58163048A 1983-09-05 1983-09-05 絶縁膜および絶縁膜−半導体界面の製造方法 Granted JPS59218735A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58163048A JPS59218735A (ja) 1983-09-05 1983-09-05 絶縁膜および絶縁膜−半導体界面の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58163048A JPS59218735A (ja) 1983-09-05 1983-09-05 絶縁膜および絶縁膜−半導体界面の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13892379A Division JPS5662328A (en) 1979-10-26 1979-10-26 Manufacturing of insulation membrane and insulation membrane-semiconductor interface

Publications (2)

Publication Number Publication Date
JPS59218735A true JPS59218735A (ja) 1984-12-10
JPS6361771B2 JPS6361771B2 (enExample) 1988-11-30

Family

ID=15766184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58163048A Granted JPS59218735A (ja) 1983-09-05 1983-09-05 絶縁膜および絶縁膜−半導体界面の製造方法

Country Status (1)

Country Link
JP (1) JPS59218735A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091577A (ja) * 1998-08-26 2000-03-31 Texas Instr Inc <Ti> ゲ―ト酸化物を形成する方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091577A (ja) * 1998-08-26 2000-03-31 Texas Instr Inc <Ti> ゲ―ト酸化物を形成する方法

Also Published As

Publication number Publication date
JPS6361771B2 (enExample) 1988-11-30

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