JPS59218732A - 半導体保護膜形成方法 - Google Patents

半導体保護膜形成方法

Info

Publication number
JPS59218732A
JPS59218732A JP58093221A JP9322183A JPS59218732A JP S59218732 A JPS59218732 A JP S59218732A JP 58093221 A JP58093221 A JP 58093221A JP 9322183 A JP9322183 A JP 9322183A JP S59218732 A JPS59218732 A JP S59218732A
Authority
JP
Japan
Prior art keywords
film
semiconductor
container
vacuum
vacuum container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58093221A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0118578B2 (enExample
Inventor
Yasukazu Seki
康和 関
Noritada Sato
則忠 佐藤
Osamu Ishiwatari
石渡　統
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Corporate Research and Development Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Corporate Research and Development Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP58093221A priority Critical patent/JPS59218732A/ja
Priority to US06/610,638 priority patent/US4627991A/en
Priority to DE19843419079 priority patent/DE3419079A1/de
Publication of JPS59218732A publication Critical patent/JPS59218732A/ja
Publication of JPH0118578B2 publication Critical patent/JPH0118578B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
JP58093221A 1983-05-26 1983-05-26 半導体保護膜形成方法 Granted JPS59218732A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58093221A JPS59218732A (ja) 1983-05-26 1983-05-26 半導体保護膜形成方法
US06/610,638 US4627991A (en) 1983-05-26 1984-05-16 Method for forming a protective film on a semiconductor body
DE19843419079 DE3419079A1 (de) 1983-05-26 1984-05-22 Verfahren zur bildung eines schutzfilms auf einem halbleiterkoerper

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58093221A JPS59218732A (ja) 1983-05-26 1983-05-26 半導体保護膜形成方法

Publications (2)

Publication Number Publication Date
JPS59218732A true JPS59218732A (ja) 1984-12-10
JPH0118578B2 JPH0118578B2 (enExample) 1989-04-06

Family

ID=14076500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58093221A Granted JPS59218732A (ja) 1983-05-26 1983-05-26 半導体保護膜形成方法

Country Status (3)

Country Link
US (1) US4627991A (enExample)
JP (1) JPS59218732A (enExample)
DE (1) DE3419079A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5064683A (en) * 1990-10-29 1991-11-12 Motorola, Inc. Method for polish planarizing a semiconductor substrate by using a boron nitride polish stop
JP5237833B2 (ja) * 2007-01-22 2013-07-17 パナソニック株式会社 半導体装置の製造方法及び半導体製造装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2836911C2 (de) * 1978-08-23 1986-11-06 Siemens AG, 1000 Berlin und 8000 München Passivierungsschicht für Halbleiterbauelemente
SU836202A1 (ru) * 1979-08-30 1981-06-07 Могилевский технологический институт Способ местного борировани стальныхдЕТАлЕй и COCTAB дл ЕгО ОСущЕСТВлЕНи
DD148349A1 (de) * 1979-12-28 1981-05-20 Gerhard Ebersbach Verfahren zur herstellung extrem harter,verschleissfester schichten erhoehter haftfestigkeit
JPS56116673A (en) * 1980-02-19 1981-09-12 Sharp Corp Amorphous thin film solar cell
US4436762A (en) * 1982-07-26 1984-03-13 Gte Laboratories Incorporated Low pressure plasma discharge formation of refractory coatings
US4438183A (en) * 1982-08-25 1984-03-20 The United States Of America As Represented By The United States Department Of Energy Photoelectrochemical cell having photoanode with thin boron phosphide coating as a corrosion resistant layer

Also Published As

Publication number Publication date
DE3419079A1 (de) 1984-11-29
JPH0118578B2 (enExample) 1989-04-06
US4627991A (en) 1986-12-09
DE3419079C2 (enExample) 1992-07-02

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