JPS59208796A - Josephson element - Google Patents
Josephson elementInfo
- Publication number
- JPS59208796A JPS59208796A JP58084307A JP8430783A JPS59208796A JP S59208796 A JPS59208796 A JP S59208796A JP 58084307 A JP58084307 A JP 58084307A JP 8430783 A JP8430783 A JP 8430783A JP S59208796 A JPS59208796 A JP S59208796A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- lower conductor
- josephson element
- thin film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明はジョセフソン素子の構成の改良に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in the structure of a Josephson element.
第1図は従来のジョセフソン素子の構造を示す断面図で
、(1)は基板、(2)は基板(])の上に形成された
グランドプレーン、(3)は更をこその上に形成された
第1の絶縁層、(4)は第1の絶縁層(3)の上の一部
に形成された下部導体、(6)は下部導体(4)の上の
一部に形成された絶縁薄膜、(6)は絶縁薄膜(5)の
上から、第1の絶縁Jrj(3)上の下部導体(4)の
形成されていない部分にわたって形成された上部導体、
(7)は絶縁薄膜(δ)が形成されていない下部導体(
4)の部分の上から上部導体(6)の上にわたって形成
された第2の絶縁層、(8)は更にその上に形成された
制御線または配線である。Figure 1 is a cross-sectional view showing the structure of a conventional Josephson element, where (1) is the substrate, (2) is the ground plane formed on the substrate (]), and (3) is the ground plane formed on the substrate (]). The formed first insulating layer (4) is a lower conductor formed on a part of the first insulating layer (3), and (6) is formed on a part of the lower conductor (4). an insulating thin film (6) is an upper conductor formed from above the insulating thin film (5) to a portion where the lower conductor (4) on the first insulating member (3) is not formed;
(7) is the lower conductor (
A second insulating layer is formed over the upper conductor (6) from above part 4), and (8) is a control line or wiring formed further thereon.
そして、このジョセフソン素子を用いた集積回路は通常
グランドプレーン(2)の上に、ジョセフソン接合を含
んで種々のインダクタンス、抵抗体などで構成されるの
であるが、このジョセフソン接合は図示のように下部導
体(4)と上部導体(6)とで非常に薄い絶縁薄膜(5
)をサンドイッチ状に挾んだ構造をしており、この絶縁
薄膜(5)の厚さが回路の特性を犬きく左右する。従っ
て、集積回路を作る場合には再現性よく、均一に絶縁薄
膜(5)を作る必要がある。そして、絶縁薄膜(5)は
通常、下部電極(4)の表面を酸化することによって形
成される。そこで、絶縁薄膜(5)の性質は下部導体(
4)の結晶性に大きく依存する。ところか、基板(1)
(こは通常、単結晶物質を用いるが、グランドプレーン
(2)および第]、の絶縁層(3)は単結晶ではない。An integrated circuit using this Josephson element is usually constructed of various inductances, resistors, etc., including a Josephson junction, on a ground plane (2). A very thin insulating film (5) is formed between the lower conductor (4) and the upper conductor (6) as shown in
) sandwiched between them, and the thickness of this insulating thin film (5) greatly influences the characteristics of the circuit. Therefore, when making an integrated circuit, it is necessary to make the insulating thin film (5) uniformly and with good reproducibility. The insulating thin film (5) is usually formed by oxidizing the surface of the lower electrode (4). Therefore, the properties of the insulating thin film (5) are similar to those of the lower conductor (
4) It largely depends on the crystallinity. However, the board (1)
The ground plane (2) and the insulating layer (3) are not single-crystal, although this typically uses a single-crystal material.
従って、下部導体(4)は非単結晶物質の上に形成しな
ければならず、その結晶性は期待できず、これに伴って
絶縁薄膜(6)の再現性、均一性もよくないという欠点
があった。Therefore, the lower conductor (4) must be formed on a non-single-crystal material, and its crystallinity cannot be expected, and the reproducibility and uniformity of the insulating thin film (6) are also poor. was there.
この発明は以上のような点に鑑みてなされたもので、下
部導体を単結晶物質からなる基板上に直接形成すること
によって、下部導体の結晶性を良好ならしめ、絶縁薄膜
の制御性、均一性、再現性を向上さぜ、特性の均一なジ
ョセフソン素子を提供するものである。This invention was made in view of the above points, and by forming the lower conductor directly on a substrate made of a single crystal material, the crystallinity of the lower conductor is improved, and the controllability and uniformity of the insulating thin film are improved. The present invention provides a Josephson element with uniform characteristics by improving performance and reproducibility.
第2図はこの発明の一実施例の構成を示す断面図で、第
1図の従来例と同一符号は同等部分を示す。この実施例
では、基板+11の上に下部導体(4)が直接形成され
るとともに、これに並べて制御線(8)が形成されてい
る。そして制御線(8)を覆うように第2の絶縁層(7
)が形成され、下部導体(4)の表面の一部を′酸化し
て形成された絶縁薄膜(5)の上から第2の絶縁JVJ
(7)の上にわたって上部導体(6)か形成されている
。上部導体(6)の上から下部導体(4)の絶縁薄膜(
6)が形成されていない部分の上にわたって第1の絶縁
N(3)が形成され、その上にグランドプレーン(2)
か形成されている。FIG. 2 is a sectional view showing the structure of an embodiment of the present invention, in which the same reference numerals as in the conventional example of FIG. 1 indicate equivalent parts. In this embodiment, a lower conductor (4) is formed directly on the substrate +11, and a control line (8) is formed next to it. Then, a second insulating layer (7) is applied to cover the control line (8).
) is formed, and a second insulating JVJ is formed from above the insulating thin film (5) formed by oxidizing a part of the surface of the lower conductor (4).
An upper conductor (6) is formed over (7). The insulating thin film (from above the upper conductor (6) to the lower conductor (4)
A first insulator N (3) is formed over the portion where N (6) is not formed, and a ground plane (2) is formed on it.
or is formed.
このような構成にしても第1図の従来例と同じジョセフ
ソン素子としての機能を有しており、しかも、下部導体
(4)は単結晶の基板f1+の上に直接形成されるので
良好な結晶性を有しており、下部導体(4)を酸化した
絶縁薄膜(5)は均一に、再現性よく形成でき、特性の
均一なジョセフソン素子が実現できる。Even with this configuration, it has the same function as the Josephson element as the conventional example shown in FIG. The insulating thin film (5) having crystallinity and oxidizing the lower conductor (4) can be formed uniformly and with good reproducibility, and a Josephson element with uniform characteristics can be realized.
以上説明したよう(こ、この発明になるジョセフソン素
子では下部導体を単結晶の基板上に直接形成したので、
下部導体の結晶性が良くなり、これを酸化して得られる
絶縁薄膜は再現性よく均一に形成できるので、ジョセフ
ソン素子の特性も均一となり、これを用いて良好な特性
の集積回路を構成する1−とかできる。As explained above (in the Josephson device of this invention, the lower conductor is formed directly on the single crystal substrate,
The crystallinity of the lower conductor improves, and the insulating thin film obtained by oxidizing it can be formed uniformly with good reproducibility, resulting in uniform characteristics of the Josephson element, which can be used to construct integrated circuits with good characteristics. You can do something like 1-.
第1図は従来のジョセフソン素子の構成を示す断面図、
第2図はこの発明の一実施例の構成を示す断面図である
。
図において、(1)は基板、(2)はグランドプレーン
、(3)は絶縁層、(4)は下部導体、(5)は絶縁薄
膜、(6)は上部導体である。
なお、図中同一符号は同一または相当X;二分を示す。
代理人 大岩場雄
第1図
第2図Figure 1 is a cross-sectional view showing the configuration of a conventional Josephson element.
FIG. 2 is a sectional view showing the structure of an embodiment of the present invention. In the figure, (1) is a substrate, (2) is a ground plane, (3) is an insulating layer, (4) is a lower conductor, (5) is an insulating thin film, and (6) is an upper conductor. Note that the same reference numerals in the drawings indicate the same or equivalent X; bisection. Agent: Yu Oiwaba Figure 1 Figure 2
Claims (1)
と、この下部導体の表面の一部を酸化させてなる絶縁薄
膜を介して上部導体とを対向させてジョセフソン接合ン
構成するとともにグランドプレーンを上記下部導体およ
び上部導体の上に絶縁層を介して形成してなることを特
徴とするジョセフソン素子。m A Josephson junction is formed by making a lower conductor directly formed on a substrate with a single crystal structure and an upper conductor facing each other with an insulating thin film formed by oxidizing a part of the surface of this lower conductor, and also forming a ground. A Josephson element comprising a plane formed on the lower conductor and the upper conductor with an insulating layer interposed therebetween.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58084307A JPS59208796A (en) | 1983-05-12 | 1983-05-12 | Josephson element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58084307A JPS59208796A (en) | 1983-05-12 | 1983-05-12 | Josephson element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59208796A true JPS59208796A (en) | 1984-11-27 |
Family
ID=13826830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58084307A Pending JPS59208796A (en) | 1983-05-12 | 1983-05-12 | Josephson element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59208796A (en) |
-
1983
- 1983-05-12 JP JP58084307A patent/JPS59208796A/en active Pending
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