JPS6091662A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6091662A JPS6091662A JP20174883A JP20174883A JPS6091662A JP S6091662 A JPS6091662 A JP S6091662A JP 20174883 A JP20174883 A JP 20174883A JP 20174883 A JP20174883 A JP 20174883A JP S6091662 A JPS6091662 A JP S6091662A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- elements
- crystal silicon
- substrate
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 14
- 229910052594 sapphire Inorganic materials 0.000 abstract description 3
- 239000010980 sapphire Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 12
- 239000012535 impurity Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
- H01L27/0694—Integrated circuits having a three-dimensional layout comprising components formed on opposite sides of a semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は１つのチップで大容量または多機能を持たせ
得る半導体装置の構造に関するものである０
〔従来技術〕
第１図は従来の半導体装置の構造を示す断面図で、（１
）は基板、（２）はその上に形成された単結晶シリコン
層である０
従来の半導体装置では、第１図に示すように基板（１）
の一方の主面上にのみ単結晶シリコン層（２）を形成し
、この単結晶シリコン層（２）に半導体素子を形成して
いた０例えば、ＭＯ８形半導体装置の場合には基板（１
）として単結晶シリコン板を用い、その一方の主表面層
に不純物を拡散させ、また、その主表面に薄膜を形成し
その薄膜に加工を施してＭＯ８半導体素子を形成してい
た。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to the structure of a semiconductor device that can have a large capacity or multiple functions in one chip.[Prior Art] Fig. 1 shows a conventional semiconductor device. A cross-sectional view showing the structure of (1
) is the substrate, and (2) is the single crystal silicon layer formed thereon.0 In a conventional semiconductor device, as shown in FIG.
For example, in the case of an MO8 type semiconductor device, a single crystal silicon layer (2) is formed only on one main surface of the substrate (1), and a semiconductor element is formed on this single crystal silicon layer (2).
), impurities were diffused into one main surface layer of the single crystal silicon plate, a thin film was formed on the main surface, and the thin film was processed to form an MO8 semiconductor element.
また、高性能な素子を得るには、基板（１）としてサフ
ァイヤなどの絶縁物からなる板を用い、その上に例えば
エピタキシャル成長法で単結晶シリコン層（２）を形成
した後、その単結晶シリコン層（２）の表面部に不純物
を拡散させ、また表面に薄膜を形成し、その薄膜に加工
を施して素子を形成していた。In addition, in order to obtain a high-performance device, a plate made of an insulating material such as sapphire is used as the substrate (1), a single crystal silicon layer (2) is formed on it by, for example, an epitaxial growth method, and then the single crystal silicon Impurities are diffused into the surface of layer (2), a thin film is formed on the surface, and the thin film is processed to form an element.
更にまた、バイポーラ形半導体装置の場合には、基板（
１）として単結晶シリコン板を用い、さらにその上に例
えばエピタキシャル成長法で基板（１）とは異なる不純
物濃度を有する単結晶シリコン層（２）を形成した後に
、この単結晶シリコン層（２）にさらに種々の不純物を
拡散させて素子を形成していた。Furthermore, in the case of bipolar semiconductor devices, the substrate (
A single crystal silicon plate is used as 1), and a single crystal silicon layer (2) having an impurity concentration different from that of the substrate (1) is formed thereon by, for example, an epitaxial growth method. Furthermore, various impurities were diffused to form elements.
しかし、このような従来の構成では基板の一方の面のみ
を利用しているので、素子の大容量化に限界があり、ま
た単機能の装置しか得られなかった０
〔発明の概要〕
この発明ｔよ以上のような点に鑑みてなされたもので、
基板の両面に単結晶半導体層を形成して、それぞれに同
一または互いに異なる機能を有する半導体素子を形成す
ることによって大容量または多機能な半導体装置を提供
するものである。However, since such a conventional configuration utilizes only one side of the substrate, there is a limit to increasing the capacity of the element, and only a single-function device can be obtained.0 [Summary of the Invention] This invention This was done in view of the above points,
A large-capacity or multifunctional semiconductor device is provided by forming single crystal semiconductor layers on both sides of a substrate and forming semiconductor elements having the same or different functions on each side.
第２図はこの発明の一実施例の構造を示す断面図で、（
１）は基板、（２）および（３）は基板（１）の両生表
面上にそれぞれ形成された単結晶シリコン層である。FIG. 2 is a sectional view showing the structure of an embodiment of the present invention.
1) is a substrate, and (2) and (3) are single-crystal silicon layers formed on the amphibatic surfaces of the substrate (1), respectively.
すなわち、単結晶シリコン板またはサファイヤなどの絶
縁物からなる基板（１）の両生表面上にエピタキシャル
成長法を用いて単結晶シリコン層（２）および（３）を
それぞれ形成する。その後にこれら単結晶シリコン層（
２）および（３）のそれぞれの表面部に同じ工程でＭＯ
Ｓ形まだはバイポーラ形素子を形成した後、両表面部の
素子を接続すれば大容量の半導体装置が得られる。That is, single-crystal silicon layers (2) and (3) are formed using an epitaxial growth method on the amphibatic surface of a substrate (1) made of a single-crystal silicon plate or an insulator such as sapphire. These single crystal silicon layers (
MO was applied to the surface of each of 2) and (3) in the same process.
After forming an S type or bipolar type element, a large capacity semiconductor device can be obtained by connecting the elements on both surfaces.
また、両年結晶シリコン層（２）および（３）の各表面
部に例えば一方にセンサー素子、他方にメモリ素子など
、互いに異なる機能を有する素子を形成すれば、１つの
チップで多機能な装置とすることができる。Furthermore, if elements with different functions are formed on each surface of the crystalline silicon layers (2) and (3), such as a sensor element on one side and a memory element on the other side, it is possible to create a multifunctional device with one chip. It can be done.
半導体素子を形成するようにしたので、ｌチップで大容
量または多機能な半導体装置が実現できる。Since a semiconductor element is formed, a large capacity or multifunctional semiconductor device can be realized with one chip.
第１図は従来の半導体装置の構造を示す断面図、第２図
はこの発明の一実施例の構造を示す断面図である。
図において、（１１は基板、（２１、（３１は単結晶半
導体（シリコン）層である。
なお、図中同一符号は同一または相当部分を示す。
代理人 大岩増雄FIG. 1 is a sectional view showing the structure of a conventional semiconductor device, and FIG. 2 is a sectional view showing the structure of an embodiment of the present invention. In the figure, (11 is the substrate, (21, (31) are single crystal semiconductor (silicon) layers. In addition, the same reference numerals in the figure indicate the same or corresponding parts. Agent: Masuo Oiwa
Claims (1)
れぞれ同一または互いに異なる機能を有する半導体素子
を形成したことを特徴とする半導体装置。(11) A semiconductor device characterized in that semiconductor elements each having the same or different functions are formed in a single crystal semiconductor layer formed on an amphibatic surface of a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20174883A JPS6091662A (en) | 1983-10-25 | 1983-10-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20174883A JPS6091662A (en) | 1983-10-25 | 1983-10-25 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6091662A true JPS6091662A (en) | 1985-05-23 |
Family
ID=16446283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20174883A Pending JPS6091662A (en) | 1983-10-25 | 1983-10-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6091662A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6452556A (en) * | 1987-08-24 | 1989-02-28 | Toyota Motor Corp | Driving device for side window wiper |
-
1983
- 1983-10-25 JP JP20174883A patent/JPS6091662A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6452556A (en) * | 1987-08-24 | 1989-02-28 | Toyota Motor Corp | Driving device for side window wiper |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR890015358A (en) | Semiconductor substrate and manufacturing method | |
| JPS6159853A (en) | Structure of silicon crystalline body | |
| JPS6321351B2 (en) | ||
| KR950001303A (en) | Thin film infrared sensor structure and manufacturing method | |
| JPS6091662A (en) | Semiconductor device | |
| JPH03124047A (en) | Integrated circuit device | |
| JP3465765B2 (en) | Method for manufacturing semiconductor substrate for IGBT | |
| JPS5890740A (en) | Semiconductor device | |
| JPS6170746A (en) | Semiconductor device | |
| JPH0563167A (en) | Semiconductor device | |
| JPS57164560A (en) | Manufacture of semiconductor integrated circuit device | |
| JPH02213159A (en) | Capacitor | |
| JPH02168649A (en) | Master slice substrate for gate array of full-mounted type | |
| JPS56138946A (en) | Semiconductor device | |
| JPS636868A (en) | Memory device | |
| JPS63244860A (en) | Extra-high speed semiconductor device | |
| JPS63246842A (en) | Semiconductor integrated circuit | |
| JPS587846A (en) | Switched capacitor filter | |
| JPS582059A (en) | Integrated circuit | |
| JPS6018946A (en) | Three-dimensional integrated circuit device | |
| JPS59208797A (en) | Josephson element integrated circuit device | |
| JPS59208796A (en) | Josephson element | |
| JPH0562897A (en) | Semiconductor substrate | |
| JPS605156U (en) | semiconductor element | |
| JPH0241440U (en) |