JPS59208768A - Semiconductor pellet mounted body - Google Patents

Semiconductor pellet mounted body

Info

Publication number
JPS59208768A
JPS59208768A JP8263983A JP8263983A JPS59208768A JP S59208768 A JPS59208768 A JP S59208768A JP 8263983 A JP8263983 A JP 8263983A JP 8263983 A JP8263983 A JP 8263983A JP S59208768 A JPS59208768 A JP S59208768A
Authority
JP
Japan
Prior art keywords
solder
semiconductor pellet
electrode
electrodes
pellet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8263983A
Other languages
Japanese (ja)
Inventor
Minoru Enomoto
榎本 実
Toshiaki Keikoin
利映 慶光院
Masayuki Sato
正幸 佐藤
Masatoshi Seki
関 正俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8263983A priority Critical patent/JPS59208768A/en
Publication of JPS59208768A publication Critical patent/JPS59208768A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/1012Auxiliary members for bump connectors, e.g. spacers
    • H01L2224/10152Auxiliary members for bump connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/10165Alignment aids
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/1405Shape
    • H01L2224/14051Bump connectors having different shapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H01L2224/1751Function
    • H01L2224/17515Bump connectors having different functions
    • H01L2224/17517Bump connectors having different functions including bump connectors providing primarily mechanical support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112Aligning
    • H01L2224/81136Aligning involving guiding structures, e.g. spacers or supporting members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112Aligning
    • H01L2224/81136Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/81138Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/8114Guiding structures outside the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81193Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0201Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/303Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3431Leadless components
    • H05K3/3436Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To form the interval between a pellet and a substrate into the prescribed one as well as to improve the heat dissipating property of the titled semiconductor pellet mounted body by a method wherein connecting electrodes are formed on the back side of a semiconductor pellet and on the surface of the insutalled substrate on which the semiconductor pellet will be connected, and when they are connected using connecting solder, an isolated solder wherein controlling solder is inserted is provided on the front and back sides of the substrate located between said electrodes. CONSTITUTION:Connecting electrodes 2 and 5 are formed respectively on the circumferential part on the back side of the semiconductor pellet 1 and on the surface of the insulated substrate opposing to said semiconductor pellet 1, and they are adhered with each other using a connecting solder 3. According to this constitution, a plurality of isolated electrodes 12 and 13 opposing to the back side of the pellet 1 and the upper surface of the substrate 4 are provided between electrodes 2 and 5, and controlling solder 13 is inserted between said electrodes 12 and 13. Subsequently, of the solder 3 and 13, the solder 13 is swelled out into pole shape or hand drum shape and solidified. Through these procedures, the distance between the pellet 1 and the substrate 4 is formed into the prescribed one, and a heat conducting and radiating path is generated by the isolated electrodes 12 and 13, thereby enabling to increase radiation efficiency.

Description

【発明の詳細な説明】 [技術分野] 本発明は、半導体ペレットの実装技術、特に、半導体ペ
レットをフェイスダウンで絶縁基板に実装固定するのに
使用して有効な技術に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a technique for mounting semiconductor pellets, and in particular to a technique effective for mounting and fixing semiconductor pellets face down on an insulating substrate.

[背景技術] 従来、半導体ペレット実装体として、ワイヤを用いずに
、半導体ペレットをはんだ接続により絶縁基板の電極に
直接接続するフェイスダウンボンディング法により実装
固定した実装体が用いられている(JIS用語辞典、■
電気線、321〜322頁)。この実装体は第1図、第
2図に示す如く、半導体ペレット1の電極2に略一致し
た電極5を有する絶縁基板4に、半導体ペレット1を適
当な位置合わせ手段により位置合わせして、加熱炉、は
んだ槽等からなる適当な加熱手段で多接続点を同時には
んだリフローにより接続はんだ3を形成して接続固定し
た半導体ベレット実装体である。 この実装体は接続点
数が増加してもボンディング作業時間がほとんど変わら
ないことに大きな利点がある。
[Background Art] Conventionally, semiconductor pellet mounts have been used that are mounted and fixed by a face-down bonding method in which semiconductor pellets are directly connected to electrodes of an insulating substrate by soldering without using wires (JIS terminology). Dictionary,■
Electric Wire, pp. 321-322). As shown in FIGS. 1 and 2, this mounting body is made by positioning the semiconductor pellet 1 on an insulating substrate 4 having an electrode 5 that substantially corresponds to the electrode 2 of the semiconductor pellet 1 using an appropriate positioning means, and then heating it. This is a semiconductor pellet package in which connection solder 3 is formed and fixed by solder reflow at multiple connection points at the same time using an appropriate heating means such as a furnace, a solder bath, etc. This mounting structure has the great advantage that the bonding time hardly changes even if the number of connection points increases.

しかし、この実装体は半導体ペレットと絶縁基板を大き
な変形能を有するはんだにより直接固定しているが、半
導体ペレットの発熱、環境温度の変化等により半導体ペ
レットと絶縁基板の熱膨張差に相当する熱ストレスが直
接接続部に加わり電極との接続界面近傍で剥離しやすい
。そのため、使用環境や半導体ペレットサイズが制限さ
れる欠点を有している。この欠点はこの実装体が接続部
のはんだの自然な溶融凝固を利用してボンディングして
いるため、接続後のはんだ形状が球欠体となり外的スト
レスに対して電極との接続界面に応力集中が生じるため
である。さらに、はんだと電極との界面はこれらを構成
している原子間で反応、拡散、化合物の生成等が生じ、
脆化している場合が多い。
However, in this package, the semiconductor pellet and the insulating substrate are directly fixed using solder that has a large deformability, but due to the heat generation of the semiconductor pellet and changes in the environmental temperature, heat corresponding to the difference in thermal expansion between the semiconductor pellet and the insulating substrate is generated. Stress is applied directly to the connection part, which tends to cause peeling near the connection interface with the electrode. Therefore, it has the disadvantage that the usage environment and semiconductor pellet size are limited. This drawback is that this mounting unit uses the natural melting and solidification of the solder at the connection part to perform bonding, so the solder shape after connection becomes a spherical shape, and stress concentrates at the connection interface with the electrode in response to external stress. This is because Furthermore, at the interface between the solder and the electrode, reactions, diffusion, and the formation of compounds occur between the atoms that make up the solder and the electrode.
It is often brittle.

そこで、接続部に加わる外的ストレスを均一にし、はん
だの変形能を最大限に生かす構造として、前記球欠体形
状を柱状あるいは鼓形状に制御した実装体が知られてい
る。
Therefore, as a structure that makes the external stress applied to the connection part uniform and makes maximum use of the deformability of the solder, a mounting body in which the shape of the bulb-shaped body is controlled to be columnar or drum-shaped is known.

このような半導体ペレット実装体として、第3図に示す
如きものが提案されている(実願昭54−155903
号)。
As such a semiconductor pellet package, the one shown in FIG.
issue).

すなわち、これは、半導体ペレソ1−1と絶縁基板4と
のはんだ接続の際、絶縁基板4に設けた孤立電極8にシ
ート状あるいはペースト状のはんだ9を供給し、半導体
ペレット1と絶縁基板4とをはんだ熔融接続した後、孤
立電極B上のはんだ9が熔融して球欠体10を形成し、
そのはんだ球欠体10の表面張力を利用して半導体ペレ
ット1にぬれることな(半導体ペレット1を押し上げて
接続状態を柱状あるいは鼓形状にし、その後はんだを凝
固せしめて固定した半導体ペレ・ノド実装体である。な
お、7は絶縁基板4上の電極5に形成された向かえはん
だ丘である。
That is, when the semiconductor pellet 1-1 and the insulating substrate 4 are connected by solder, a sheet-like or paste-like solder 9 is supplied to the isolated electrode 8 provided on the insulating substrate 4, and the semiconductor pellet 1 and the insulating substrate 4 are soldered together. After soldering and connecting the two, the solder 9 on the isolated electrode B is melted to form a spherical body 10,
The semiconductor pellet 1 is not wetted by using the surface tension of the solder spherical pieces 10 (the semiconductor pellet 1 is pushed up to form a columnar or drum-shaped connection, and then the solder is solidified to fix the semiconductor pellet/nod mounted body). Note that 7 is a solder hill formed on the electrode 5 on the insulating substrate 4.

しかし、この半導体ペレット実装体においては、孤立電
極8上にシート状あるいはペースト状のはんだ9を精度
よく供給する必要があるため、絶縁基板についての製造
工程が多大になるという問題点がある。
However, in this semiconductor pellet package, since it is necessary to accurately supply sheet-like or paste-like solder 9 onto isolated electrodes 8, there is a problem that the manufacturing process for the insulating substrate becomes large.

[発明の目的] 本発明の目的は、前記した問題点を解決し、はんだの接
続形状を容易に制御でき、高い接続信頼性と高い作業性
を有し、しかも製造工程の増加を抑止することができる
半導体ペレット実装体を提供するにある。
[Object of the Invention] The object of the present invention is to solve the above-mentioned problems, to easily control the solder connection shape, to have high connection reliability and high workability, and to suppress the increase in manufacturing steps. The purpose of the present invention is to provide a semiconductor pellet package that can be used.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[発明の概要] 本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。
[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.

すなわち、半導体ペレットの電極へのはんだ丘の形成と
同時に制御用はんだ丘を形成し、絶縁基板への電極の形
成と同時に孤立電極を形成し、制御用はんだ丘が孤立電
極に溶着してなる球欠体によりペレットと基板との間隔
を電極はんだ丘の高さとほぼ等しく制御し、はんだの電
極への親和性を利用して接続はんだの形成を柱状あるい
は鼓形状になし、その後はんだを凝固せしめて固定した
ものである。
That is, a control solder hill is formed at the same time as the solder hill is formed on the electrode of the semiconductor pellet, an isolated electrode is formed at the same time as the electrode is formed on the insulating substrate, and the control solder hill is welded to the isolated electrode to form a sphere. The gap between the pellet and the substrate is controlled to be approximately equal to the height of the electrode solder hill using the missing body, and the connection solder is formed into a columnar or drum shape by utilizing the solder's affinity for the electrode, and then the solder is solidified. It is fixed.

[実施例] 第4図は本発明による半導体ペレット実装体の一実施例
を示す平面図、第5図は第4図のV−V綿に沿う断面図
である。
[Embodiment] FIG. 4 is a plan view showing an embodiment of a semiconductor pellet package according to the present invention, and FIG. 5 is a sectional view taken along the line V-V in FIG. 4.

本実施例において、半導体ペレット実装体は、半導体ペ
レット1と、絶縁基板4と、ペレソ1〜1および基板4
上の電極2.5間に形成された接続ばんだ3と、ペレッ
ト1および基板4上の孤立電極11.12間に両者との
接触部分が切り欠かれてなる球欠体に形成された制御用
はんだ13とを備えており、半導体ペレット1は絶縁基
板4に対し制御用はんだ13によってその接続高さおよ
び接続形状を制御された接続はんだ3において電気的か
つ機械的に接続されて実装されている。
In this embodiment, the semiconductor pellet package includes a semiconductor pellet 1, an insulating substrate 4, pellets 1 to 1, and a substrate 4.
A control device formed in a spherical body with a contact portion between the connection band 3 formed between the upper electrodes 2.5 and the isolated electrodes 11.12 on the pellet 1 and the substrate 4 cut out. The semiconductor pellet 1 is mounted and electrically and mechanically connected to the insulating substrate 4 at the connection solder 3 whose connection height and connection shape are controlled by the control solder 13. There is.

次に、この実装体を製造工程順に第6図(al、(bl
を用いて説明する。
Next, this mounted body is shown in FIG. 6 (al, (bl) in order of manufacturing process.
Explain using.

まず、半導体ペレット1の実装面上には、接続電極2と
は別の孤立電極11が接続電極2の内側の適当な位置に
おいて電気的に孤立するように適数構成される。この孤
立電極11上には、制御用はんだ13を形成するための
はんだ丘14が接続電極2のはんだ丘6についての形成
工程と同時に形成される。たとえば、接続電極2と孤立
電極11とに、はんだが蒸着あるいはめっき等の手段に
より同時にのせられ、その後、適当な加熱手段により、
ごれらはんだが溶融されると、接続電極2と孤立電極1
1とには接続はんだ丘6と制御用はんだ丘14とが同時
にそれぞれ形成される。
First, on the mounting surface of the semiconductor pellet 1, an appropriate number of isolated electrodes 11 different from the connection electrode 2 are formed so as to be electrically isolated at appropriate positions inside the connection electrode 2. On this isolated electrode 11, a solder mound 14 for forming the control solder 13 is formed simultaneously with the formation process for the solder mound 6 of the connection electrode 2. For example, solder is simultaneously placed on the connection electrode 2 and the isolated electrode 11 by means such as vapor deposition or plating, and then by means of suitable heating means.
When the dirty solder is melted, the connection electrode 2 and the isolated electrode 1
1, connection solder mounds 6 and control solder mounds 14 are formed simultaneously.

制御用はんだ丘140体積は、半導体ペレット1の孤立
電極11に溶着されてなる一端球欠体形状においての高
さく電極の高さを無視すれば、第6図(a)に示すHに
等しい。)が、電極はんだ丘6の高さく同しくhに等し
い。)よりも所定寸法、たとえば、10μm程度高くな
り、かつ、後述するように、ペレット1および絶縁基板
4の孤立電極11.12の双方に溶着されてなる両端球
欠体形状になった状態においての高さが、電極はんだ丘
6の高さhと同等またはそれよりも僅かに低くなるよう
に設定されている。
The volume of the control solder mound 140 is equal to H shown in FIG. 6(a), if the height of the electrode in the shape of a ball-shaped one end formed by welding to the isolated electrode 11 of the semiconductor pellet 1 is ignored. ) is the height of the electrode solder hill 6 and is equal to h. ) has a predetermined dimension, for example, about 10 μm higher than that of the pellet 1 and the isolated electrode 11. The height is set to be equal to or slightly lower than the height h of the electrode solder mound 6.

一方、絶縁基板4上には、前記半導体ペレット■の接続
電極2に対応した位置に相手方の接続電極5が、また、
前記半導体ペレット1の制御用はんだ丘14に対応した
位置に孤立電極12がそれぞれ形成されている。孤立電
極12は、前記孤立電極11と同等あるいはそれ以上の
大きさに形成され、たとえば、導電材を基板4上に印刷
することにより簡単に形成することができる。
On the other hand, on the insulating substrate 4, a counterpart connection electrode 5 is placed at a position corresponding to the connection electrode 2 of the semiconductor pellet (2), and
Isolated electrodes 12 are formed at positions corresponding to the control solder mounds 14 of the semiconductor pellet 1, respectively. The isolated electrode 12 is formed to have a size equal to or larger than the isolated electrode 11, and can be easily formed, for example, by printing a conductive material on the substrate 4.

前記構成にかかる半導体ペレット1と絶縁基板4とは、
適当な手段により、第8図(alに示すように、接続は
んだ丘6と電極5とを正対させ、かつ制御用はんだ丘1
4を孤立電極12に当接させた状態において位置合わせ
され、はんだ丘と電極6と5および14と12に塗布さ
れたフラフクス(不図示)により仮固定される。
The semiconductor pellet 1 and the insulating substrate 4 according to the above structure are
By appropriate means, as shown in FIG.
4 are aligned with the isolated electrodes 12 and temporarily fixed by solder mounds and fluff (not shown) applied to the electrodes 6 and 5 and 14 and 12.

この仮固定状態で、半導体ペレット1と絶縁基板4との
複合体は、加熱炉あるいは熔融はんだ槽等の適当な加熱
手段によって加熱される。
In this temporarily fixed state, the composite of the semiconductor pellet 1 and the insulating substrate 4 is heated by a suitable heating means such as a heating furnace or a molten solder bath.

この加熱によって、制御用はんだ丘14は溶融し、絶縁
基板4上のはんだ親和性の孤立電極12に付着拡散して
、第6図(b)に示すように、両端を切り欠かれた球欠
体となり、制御用はんだ13が形成されろ。ごの制御用
はんだ13の高さは接続はんだ丘6の高さhとほぼ等し
くなるように設定された値に、この溶融球欠体自身の表
面張力により維持される。
By this heating, the control solder mounds 14 are melted and adhered and diffused to the solder-compatible isolated electrodes 12 on the insulating substrate 4, resulting in a ball-like shape with both ends cut out, as shown in FIG. 6(b). Then, the control solder 13 is formed. The height of the solder 13 for controlling the solder is maintained at a value set to be approximately equal to the height h of the connecting solder mound 6 by the surface tension of the molten bulb itself.

両端が切り欠かれた球欠体の制御用はんだ13が形成さ
れると、半導体ペレット1と絶縁基板4との相対高さが
低(なり、第6図(blに示すように、電極はんだ丘6
の先端が基板4の相手方電極5に僅かに接触する。この
電極はんだ丘6は既に溶融状態にあるので、電極5に接
触すると、電極面全体に拡散しつつ電極2.5間を接続
し、第5図に示すような接続はんだ3を形成する。第5
図と第6図(blとの比較から明らかなように、熔融一
体化してなる接続はんだ3は中実体を形成するため、熔
融一体化しようとするはんだ五6は電極5との突き合わ
せ面外方の空間を埋める必要がある。
When the control solder 13, which has a spherical shape with both ends cut out, is formed, the relative height between the semiconductor pellet 1 and the insulating substrate 4 becomes low (as shown in FIG. 6
The tip of the electrode slightly contacts the other electrode 5 of the substrate 4. Since this electrode solder mound 6 is already in a molten state, when it comes into contact with the electrode 5, it spreads over the entire electrode surface and connects the electrodes 2.5, forming the connecting solder 3 as shown in FIG. Fifth
As is clear from the comparison between the figure and FIG. need to fill the space.

この空間を埋めることにより、接続はんだ3の高さばは
んだ丘6の電極5との突合状態における高さよりも低く
なろうとする。さらに、一体的に熔融したはんだ3はそ
の表面張力により球形になろうとするため、その高さは
一層低くなろうとする。
By filling this space, the height of the connecting solder 3 tends to be lower than the height of the solder mound 6 in the abutted state with the electrode 5. Furthermore, since the integrally melted solder 3 tends to become spherical due to its surface tension, its height tends to become even lower.

しかし、前述のように、制御用はんだ13は一定の高さ
を維持しようとするため、半導体ペレット1と絶縁基板
4とは所定の間隔を維持され、これにより、接続ばんだ
3はその高さを低くすることを阻止される。したがって
、接続はんだ3は制御用はんだ13により、その接続高
さおよび接続形状を制御され、柱状あるいは鼓形状に形
成される。
However, as described above, since the control solder 13 tries to maintain a constant height, a predetermined distance is maintained between the semiconductor pellet 1 and the insulating substrate 4, and as a result, the connecting solder 3 is kept at that height. is prevented from lowering. Therefore, the connection height and connection shape of the connection solder 3 are controlled by the control solder 13, and the connection solder 3 is formed into a columnar or drum shape.

このようにして、半導体ペレットが絶縁基板に柱状ある
いは鼓形状に制御されて形成された接続はんだにおいて
電気的、機械的に実装固定されてなる実装体が得られる
In this way, a packaged body is obtained in which the semiconductor pellets are electrically and mechanically mounted and fixed on the insulating substrate using the connection solder which is controlled to have a columnar or drum shape.

[効果] (1)、 溶融して高さを低くし、かつ一定高さを維持
する制御用はんだ丘を半導体ペレットに形成することに
より、接続はんだ丘の熔融一体化時にこの制御用はんだ
によりベレットと絶縁基板との間隔を所望の値に維持さ
せることができるため、柱状または鼓形状の接続はんだ
を得ることができる。
[Effects] (1) By forming a control solder hill on the semiconductor pellet that melts to lower the height and maintain a constant height, the control solder increases the pellet when the connecting solder hill is melted and integrated. Since the distance between the insulating substrate and the insulating substrate can be maintained at a desired value, a columnar or drum-shaped connection solder can be obtained.

(2)、制御用はんだ丘を半導体ペレットに設けること
により、このはんだ丘を半導体ペレットに設けられる電
極はんだ丘と同時形成することができるので、制御用は
んだ比形成のだめの専用の工程は不必要となり、工程の
増大を抑止することができる。
(2) By providing the control solder hill on the semiconductor pellet, this solder hill can be formed simultaneously with the electrode solder hill provided on the semiconductor pellet, so a dedicated process for forming the control solder ratio is unnecessary. Therefore, it is possible to suppress the increase in the number of steps.

(3)、制御用はんだが絶縁基板に接触することにより
、熱伝導放熱路を構成するため、半導体ペレッ1−の放
熱性能が向上される。
(3) Since the control solder comes into contact with the insulating substrate and forms a thermally conductive radiation path, the heat radiation performance of the semiconductor pellet 1- is improved.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。
Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

たとえば、絶縁基板の接続電極および孤立電極に向かえ
はんだを形成してもよい。
For example, solder may be formed on connection electrodes and isolated electrodes of an insulating substrate.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のフェイスダウンボンディング方式により
接続した半導体ペレット実装体の接続部の平面図、 第2図は第1図の■〜■線に沿う断面図、第3図(a)
、(bl、(c)は従来のフェイスダウンボンディング
方式において半導体ベレットにぬれない離隔子はんだを
絶縁基板に設けてなる半導体ペレット実装体の製造工程
を説明する各断面図、第4図は本発明による半導体ペレ
ット実装体の一実施例を示す平面図、 第5図は第4図のV−V線に沿う断面図、第6図fal
、fblはその製造工程を説明する各断面図である。 1・・・半導体ペレット、2・・・接続電極、3・・・
接続ばんだ、4・・・絶縁基板、5・・・接続電極、6
・・・はんだ丘、11.12・・・孤立電極、13・・
・制御用はんだ、14・・・制御用はんだ丘。 第  1  図 第  3  図 と久→ グ (b) (C)
Figure 1 is a plan view of the connection part of a semiconductor pellet package connected by the conventional face-down bonding method, Figure 2 is a cross-sectional view taken along the line ■ to ■ in Figure 1, and Figure 3 (a).
, (bl, and (c) are cross-sectional views illustrating the manufacturing process of a semiconductor pellet package in which an insulating substrate is provided with a separator solder that does not wet the semiconductor pellet in the conventional face-down bonding method, and FIG. 4 is a cross-sectional view of the present invention. FIG. 5 is a cross-sectional view taken along the line V-V in FIG. 4, and FIG.
, fbl are cross-sectional views illustrating the manufacturing process. 1... Semiconductor pellet, 2... Connection electrode, 3...
Connection bander, 4... Insulating substrate, 5... Connection electrode, 6
...Solder hill, 11.12...Isolated electrode, 13...
- Control solder, 14... Control solder hill. Figure 1 Figure 3 Tokyu → Gu (b) (C)

Claims (1)

【特許請求の範囲】[Claims] ■、主電極はんだ丘を有する半導体ペレットと、前記は
んだ丘にほぼ整合する電極を有する絶縁基板とを備え、
両者を前記はんだ丘が電極間で熔融されてなる接続はん
だを介して接続実装してなる半導体ペレット実装体にお
いて、前記半導体ペレソ1−のはんだ丘以外の位置に制
御用はんだ丘を設りるとともに、前記絶縁基板の制御用
はんだ丘が対向する位置に孤立電極を設け、前記電極は
んだ丘の溶融時に制御用はんだ丘が前記孤立電極に溶着
してなる溶融球欠体により半導体ペレ・7トと絶縁基板
との間隔を制御するように、前記制御用はんだ丘の体積
は、溶融前の高さが前記電極はんだ丘の訪さよりも高く
なり、溶融後の球欠体の高さが1111記電極はんだ丘
の高さとほぼ等しくなるように設定されたことを特徴と
する半導体ペレット実装体。
(2) comprising a semiconductor pellet having a main electrode solder hill, and an insulating substrate having an electrode substantially aligned with the solder hill;
In a semiconductor pellet mounted body in which both are connected and mounted via a connecting solder in which the solder mounds are melted between electrodes, control solder mounds are provided at positions other than the solder mounds of the semiconductor pellets 1-, and , an isolated electrode is provided on the insulating substrate at a position facing the control solder hill, and when the electrode solder hill is melted, the control solder hill is welded to the isolated electrode, and a molten spherical body forms a semiconductor pellet. In order to control the distance from the insulating substrate, the volume of the control solder mound is such that the height before melting is higher than the height of the electrode solder mound, and the height of the spherical body after melting is the same as that of the 1111 electrode. A semiconductor pellet assembly characterized in that the height is set to be approximately equal to the height of a solder hill.
JP8263983A 1983-05-13 1983-05-13 Semiconductor pellet mounted body Pending JPS59208768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8263983A JPS59208768A (en) 1983-05-13 1983-05-13 Semiconductor pellet mounted body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8263983A JPS59208768A (en) 1983-05-13 1983-05-13 Semiconductor pellet mounted body

Publications (1)

Publication Number Publication Date
JPS59208768A true JPS59208768A (en) 1984-11-27

Family

ID=13779996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8263983A Pending JPS59208768A (en) 1983-05-13 1983-05-13 Semiconductor pellet mounted body

Country Status (1)

Country Link
JP (1) JPS59208768A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5907187A (en) * 1994-07-18 1999-05-25 Kabushiki Kaisha Toshiba Electronic component and electronic component connecting structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5907187A (en) * 1994-07-18 1999-05-25 Kabushiki Kaisha Toshiba Electronic component and electronic component connecting structure

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