JPS59207709A - ミキサ回路 - Google Patents

ミキサ回路

Info

Publication number
JPS59207709A
JPS59207709A JP58081923A JP8192383A JPS59207709A JP S59207709 A JPS59207709 A JP S59207709A JP 58081923 A JP58081923 A JP 58081923A JP 8192383 A JP8192383 A JP 8192383A JP S59207709 A JPS59207709 A JP S59207709A
Authority
JP
Japan
Prior art keywords
signal
field effect
drain
effect transistor
mixer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58081923A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0153804B2 (enExample
Inventor
Kenzo Tanabe
田辺　謙造
Masahiko Nakamura
雅彦 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58081923A priority Critical patent/JPS59207709A/ja
Publication of JPS59207709A publication Critical patent/JPS59207709A/ja
Publication of JPH0153804B2 publication Critical patent/JPH0153804B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Superheterodyne Receivers (AREA)
JP58081923A 1983-05-10 1983-05-10 ミキサ回路 Granted JPS59207709A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58081923A JPS59207709A (ja) 1983-05-10 1983-05-10 ミキサ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58081923A JPS59207709A (ja) 1983-05-10 1983-05-10 ミキサ回路

Publications (2)

Publication Number Publication Date
JPS59207709A true JPS59207709A (ja) 1984-11-24
JPH0153804B2 JPH0153804B2 (enExample) 1989-11-15

Family

ID=13759974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58081923A Granted JPS59207709A (ja) 1983-05-10 1983-05-10 ミキサ回路

Country Status (1)

Country Link
JP (1) JPS59207709A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6219536B1 (en) 1997-09-19 2001-04-17 Nec Corporation Mixer circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5881924A (ja) * 1981-08-18 1983-05-17 Toshiba Corp 巻鉄心の焼鈍方法および焼鈍炉

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5881924A (ja) * 1981-08-18 1983-05-17 Toshiba Corp 巻鉄心の焼鈍方法および焼鈍炉

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6219536B1 (en) 1997-09-19 2001-04-17 Nec Corporation Mixer circuit

Also Published As

Publication number Publication date
JPH0153804B2 (enExample) 1989-11-15

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