JPS59195762U - heat sink - Google Patents

heat sink

Info

Publication number
JPS59195762U
JPS59195762U JP9194883U JP9194883U JPS59195762U JP S59195762 U JPS59195762 U JP S59195762U JP 9194883 U JP9194883 U JP 9194883U JP 9194883 U JP9194883 U JP 9194883U JP S59195762 U JPS59195762 U JP S59195762U
Authority
JP
Japan
Prior art keywords
heat sink
semiconductor laser
laser element
single crystal
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9194883U
Other languages
Japanese (ja)
Inventor
弘喜 浜田
正治 本多
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP9194883U priority Critical patent/JPS59195762U/en
Publication of JPS59195762U publication Critical patent/JPS59195762U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来例を示す断面図、第２図は本考案の実施例
を示す断面図、第３図はモニタリング特性を示す特性図
、第４図は遠視野像を示す特性図である。 ６・・・ヒートシンク、７・・・半導体レーザ素子、２
０・・・受光素子。FIG. 1 is a sectional view showing a conventional example, FIG. 2 is a sectional view showing an embodiment of the present invention, FIG. 3 is a characteristic diagram showing monitoring characteristics, and FIG. 4 is a characteristic diagram showing a far-field image. 6... Heat sink, 7... Semiconductor laser element, 2
0... Light receiving element.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体レーザ素子が固着され、該半導体レーザ素子から
発する熱を放熱するための単結晶シリコン基板であって
、該単結晶シリコン基板の上記半導体レーザ素子が固着
された一面には受光素子が形成されていることを特徴と
するヒートシンク。A single crystal silicon substrate to which a semiconductor laser element is fixed and for dissipating heat emitted from the semiconductor laser element, wherein a light receiving element is formed on one surface of the single crystal silicon substrate to which the semiconductor laser element is fixed. A heat sink characterized by:
JP9194883U 1983-06-14 1983-06-14 heat sink Pending JPS59195762U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9194883U JPS59195762U (en) 1983-06-14 1983-06-14 heat sink

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9194883U JPS59195762U (en) 1983-06-14 1983-06-14 heat sink

Publications (1)

Publication Number Publication Date
JPS59195762U true JPS59195762U (en) 1984-12-26

Family

ID=30222071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9194883U Pending JPS59195762U (en) 1983-06-14 1983-06-14 heat sink

Country Status (1)

Country Link
JP (1) JPS59195762U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH114047A (en) * 1997-06-13 1999-01-06 Sharp Corp Semiconductor laser device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH114047A (en) * 1997-06-13 1999-01-06 Sharp Corp Semiconductor laser device and manufacture thereof

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