JPS5919340A - Semiconductor device - Google Patents

Abstract

PURPOSE:To enhance the efficiency of a semiconductor device by pressure contacting an electrically insulating member which has large thermal conductivity on a part, to which the electrode of a semiconductor chip is not pressure contacted, thereby uniformly reducing the thermal resistance distribution and uniformly dissipating the head generated from the chip. CONSTITUTION:In a power SCR, electrode blocks 6A, 6K are pressure contacted with the anode and cathode electrodes 3, 5 of an element chip 1 to lead out the electrodes. An electrically insulating member 11 which has large thermal conductivity is engaged with the space of the notch of the block 6K, and pressure contacted with the chip 1. As a result, the thermal resistance of this part is reduced. Further, the lead G of the gate electrode is pressurized to the gate electrode 4 by the part of the member.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a pressure contact type semiconductor device, and more particularly to an improvement in the structure of a thyristor for electric power, for example, of a type that does not use a compensation (reinforcement) plate.

[Background technology of the invention and its problems]

Structure of a conventional power thyristor As shown in Fig. 1, a compensating plate (2) made of W or the like is attached to an element chip (1).
is soldered to the main surface on the side where the anode electrode (3) is formed, and on the other main surface, a gate electrode (4) is formed in a part of the center, and the remaining part is formed as a cathode electrode (5). Electrode block (6A) for each electrode.

(6K) was brought into pressure contact to achieve electrode derivation. Further, the cup-V electrode block (6K) has a notch (5a) extending radially from the center to lead out the gate electrode (4) at the center of the chip, and this space allows the gate electrode m (4
) is led out through the ceramic member (7a) of the envelope (7). The envelope includes an annular plate (7b) in which the ceramic member (7a) surrounds both the electrode blocks (6A) and (6K) in an annular shape, and closes a gap between each peripheral edge at both ends of the ceramic member (7a) and each opposing electrode block; (7C). Recently, in the structure described above, a reinforcing plate has been omitted from the element chip in many cases. According to this structure, what is shown in FIG. 1 becomes as shown in FIG. jI2. The inventor investigated the heat dissipation of the electrode lead-out part for this structure, and found that the electrode block (6K) leading out the cathode 111k is connected to the gate electrode contact at the center of the notch (5a) as shown in FIG. It was also found that the contact between the anode electrode facing the notch through the element chip was also poor (thermal resistance increased). For example, in the Darlington transistor shown in FIG. 5, in which the Darlington circuit shown in FIG.
drive stage) (D), rear stage (one power stage) (P) on the periphery
The arrangement shown in FIG. 6 is adopted, and the electrode lead-out structure is exactly the same as that shown in FIG. 2. That is, (3) is the collector electrode, (5) is the emitter pole, and (4
) is the base electrode.

[Purpose of the invention]

The present invention provides an improved structure for a semiconductor device in view of the above-mentioned conventional problems, and an object of the present invention is to reduce the thermal resistance of a press-contact type semiconductor device that does not have a compensating plate.

[Summary of the Invention] The pressure-contact type semiconductor device according to the present invention includes an electrode lead-out member that comes into pressure-contact with the electrodes of the semiconductor chip and leads out the electrodes! The semiconductor chip is characterized in that the portion in contact with the pole is formed to match the shape of the electrode, and an electrically insulating member with high thermal conductivity is pressed into contact with other portions of the semiconductor chip.

[Embodiments of the invention]

Next, one embodiment of the present invention will be explained in detail with reference to FIGS. 7 and 8. - Example cathode (emitter) 1
The thermal resistance of this part is reduced by fitting an electrical insulating material 0υ with high thermal conductivity, such as one made of ceramics or beryllia, into the space of the notch (5a) of the single-pole block (6K) and pressing it against the element chip. Reduce. Unfortunately, this part of the electrical insulation member connects the gate (base) electrode lead (6G) to the gate (base) electrode (4).
).

This pressurization can be done by installing springs a and b on the gate (base) electrode lead, and connecting one end of the spring to the gate (base) electrode lead.
It is applied to the electrode lead by bringing the other end into elastic contact with the electrically insulating member aυ.

〔Effect of the invention〕

According to this invention, heat dissipation over the entire surface of the element chip is improved. In other words, because an electrically insulating material with high thermal conductivity is pressed into contact with the parts where the electrode block is not pressed, the thermal resistance distribution is uniformly lowered, and the heat generated from the element chip is dissipated uniformly, increasing efficiency. There are advantages. For example, when applied to Darlington transistors, the previous stage (drive stage) had poor heat dissipation and was not able to flow sufficient current, but by applying pressure to an electrically insulating material with good heat dissipation, thermal resistance is reduced and improved. It was done.

Another advantage is that the gate electrode (base electrode) can also be pressed into contact with the electrically insulating member by the elasticity of a spring.

[Brief explanation of the drawing]

1 and 2 are both cross-sectional views of a conventional pressure contact type semiconductor device, and FIG. 3 is a sectional view of one of the pressure contact type semiconductor devices.
Figure 4 is a front view of the pole block, Figure 4 is a Darlington circuit diagram, Figure 5 is a cross-sectional view of a Darlington transistor, Figure 6 is a cross-sectional view of the Darlington transistor's pressure contact 'WL pole block, and Figure 7 is a pressure contact type of one embodiment. A cross-sectional view of the semiconductor device, FIG. 8 is a partial cross-sectional view of FIG. 7. 1 Semiconductor chip 3 Anode electrode (collector electrode) 4
Gate electrode (base electrode) 5 Cathode electrode (emitter electrode) (') A, 5K Electrode block 11 Electrical insulation member 12 Spring agent Patent attorney Inoue - Male Ill Figure 2! ! I Figure 3 Figure 4 Figure 51! ! ←p−←−D□←β→ Fig. 6

Claims (1)

[Claims] An electrode deriving member that is brought into pressure contact with the electrode of the semiconductor chip to lead out the electrode is formed so that the part that contacts the electrode matches the shape of the electrode, and an electrically insulating member having high thermal conductivity is brought into pressure contact with the other part of the semiconductor chip. A press-contact type semiconductor device with a structure.