JPH0289352A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0289352A
JPH0289352A JP24201188A JP24201188A JPH0289352A JP H0289352 A JPH0289352 A JP H0289352A JP 24201188 A JP24201188 A JP 24201188A JP 24201188 A JP24201188 A JP 24201188A JP H0289352 A JPH0289352 A JP H0289352A
Authority
JP
Japan
Prior art keywords
cooling piece
cooling
piece
semiconductor device
current terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24201188A
Other languages
Japanese (ja)
Inventor
Yasuhiro Yamamoto
康博 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP24201188A priority Critical patent/JPH0289352A/en
Publication of JPH0289352A publication Critical patent/JPH0289352A/en
Pending legal-status Critical Current

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To obtain a semiconductor device with improved cooling properties by embedding the head part of a clamping bolt into a cooling piece. CONSTITUTION:A cooling piece 14 is placed so that tip parts 18b, 18b of clamping bolts 18, 18 may be directed upward, an insulation plate 13, a current terminal 12, a semiconductor element 11, a current terminal 15, and an insulation plate 16 are piled up in sequence, and then nuts 19, 19 are clamped to the clamping bolts 18, 18 so that the insulation plate 16 may be pressed downward by a metal springy press pressure body 17. Thus, it is not necessary to form a cut part for mounting a bolt at a cooling surface 14a of the cooling piece 14 and the cooling surface 14a can be made larger by that amount. Namely, when the cooling surface 14a is mounted so that it may be held against the external cooling piece, the junction area between the cooling piece 14 and the external cooling piece can be made larger and heat generated during operation of the semiconductor element 11 can be efficiently transmitted from the cooling piece 14 to the external cooling piece, thus achieving an improved cooling performance.

Description

【発明の詳細な説明】 (産業上の利用分野) この発明は、電気絶縁形の半導体装置に関し、特にその
放熱部を確保するためのボルト取付機構の改良に関する
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an electrically insulated semiconductor device, and more particularly to an improvement in a bolt attachment mechanism for securing a heat dissipation portion thereof.

〔従来の技術〕[Conventional technology]

一般に、大電力用のダイオード、サイリスタ等の半導体
素子を使用する電気絶縁形の半導体装置においては、半
導体素子が動作することによって発生する熱を放熱させ
るための放熱手段が必要である。
Generally, electrically insulated semiconductor devices that use semiconductor elements such as high-power diodes and thyristors require heat radiation means to radiate heat generated by the operation of the semiconductor elements.

第2図はこの種の従来の半導体装置を示す一部切欠側面
図である。同図に示すように、中央に設けられる半導体
素子1の一方の主電極面には、電流端子2、優れた熱伝
導性を有するセラミック等からなる絶縁板3、銅または
アルミニウム等の優れた熱伝導性を有する金属からなる
冷却片4が順次積重ねられる。一方、半導体素子1の他
方の主電極面には、電流端子5、セラミック等の絶縁板
6、板ばね等の金属弾性押圧体7が積重ねられる。
FIG. 2 is a partially cutaway side view showing a conventional semiconductor device of this type. As shown in the figure, one main electrode surface of the semiconductor element 1 provided in the center has a current terminal 2, an insulating plate 3 made of ceramic or the like having excellent thermal conductivity, and an insulating plate 3 made of ceramic or the like having excellent thermal conductivity, and Cooling pieces 4 made of conductive metal are stacked one after another. On the other hand, on the other main electrode surface of the semiconductor element 1, a current terminal 5, an insulating plate 6 made of ceramic or the like, and a metal elastic pressing body 7 such as a leaf spring are stacked.

そして、4個の締付ボルト8,8(同図において2個の
み示す)を、冷却片4の下方より冷却片4の四隅と金属
弾性押圧体7の四隅にそれぞれ貫通させてナツト9.9
をそれぞれ締結することにより、上記積層体を加圧挟持
して半導体装置が構成される。
Then, four tightening bolts 8, 8 (only two are shown in the figure) are passed through the four corners of the cooling piece 4 and the four corners of the metal elastic pressing body 7 from below the cooling piece 4, respectively, and tightening the nuts 9.9.
By fastening them, the laminate is held under pressure to form a semiconductor device.

この装置の組付手順は、まず冷却片4に締付ボルト8.
8を貫通し、締付ボルト8.8を図示しないボルト固定
治具で固定しながら、絶縁板3゜電流端子2.半導体素
子1.電流端子5および絶縁板6を順次積重ね、その後
金属弾性押圧体7で絶縁板6を下方へ押付けるようにナ
ツト9,9を締付ボルト8,8に締結する。
The procedure for assembling this device is to first attach the cooling piece 4 to the tightening bolt 8.
8, and while fixing the tightening bolt 8.8 with a bolt fixing jig (not shown), insert the current terminal 2.8 through the insulating plate 3°. Semiconductor device 1. The current terminal 5 and the insulating plate 6 are stacked one on top of the other, and then the nuts 9, 9 are fastened to the tightening bolts 8, 8 so that the insulating plate 6 is pressed downward by the metal elastic pressing body 7.

このような半導体装置においては、冷却片4の放熱面4
aを図示しない外部冷n1片に圧接するように取付けて
、半導体素子1のその動作中に発生する熱を、電流端子
2.絶縁板3および冷却片4を介して上記図示しない外
部冷却片に放熱して外部に発散させるようにしている。
In such a semiconductor device, the heat radiation surface 4 of the cooling piece 4
The heat generated during the operation of the semiconductor element 1 is transferred to the current terminals 2 . Heat is radiated to the external cooling piece (not shown) via the insulating plate 3 and the cooling piece 4 to be radiated to the outside.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

このような半導体装置では、放熱が十分に行なえるよう
に、冷却片4の放熱面4aの面積を大きく確保すること
が望まれるが、従来の半導体装置では、締付ボルト8.
8で加圧挟持するように構成しているため、冷却片4に
ボルト取付用の切欠部10.10を形成しなければなら
ず、その分数熱面4aの面積が減少して放熱性能に劣り
、蓄積された熱により通電能力が低下するという問題が
あった。
In such a semiconductor device, it is desirable to secure a large area for the heat radiation surface 4a of the cooling piece 4 so that heat can be sufficiently radiated.However, in the conventional semiconductor device, the tightening bolt 8.
Since the cooling piece 4 is configured to be clamped under pressure, it is necessary to form notches 10 and 10 in the cooling piece 4 for bolt attachment, and the area of the heating surface 4a decreases, resulting in poor heat dissipation performance. However, there was a problem in that the current carrying capacity was reduced due to the accumulated heat.

この発明は、上記従来技術の問題を解消し、放熱性能に
優れた半導体装置を提供することを目的とする。
It is an object of the present invention to solve the problems of the prior art described above and to provide a semiconductor device with excellent heat dissipation performance.

〔課題を解決するための手段〕[Means to solve the problem]

この発明は、半導体素子の一方の主電極面に第1の電流
端子、第1の絶縁板および冷uI片を順次積重ねるとと
もに、他方の主電極面に第2の電流端子、第2の絶縁板
J3よび弾性押圧体を順次積重ねた積層体を、締付ボル
トにより加圧挟持した半導体装置であって、上記目的を
達成するため、前記締付ボルトの頭部を前記冷却片に埋
設している。
In this invention, a first current terminal, a first insulating plate, and a cold uI piece are sequentially stacked on one main electrode surface of a semiconductor element, and a second current terminal, a second insulating plate are stacked on the other main electrode surface. A semiconductor device in which a laminate in which a plate J3 and an elastic pressing body are sequentially stacked is held under pressure by tightening bolts, and in order to achieve the above object, the head of the tightening bolt is embedded in the cooling piece. There is.

〔作用〕[Effect]

この発明における半導体装置は、締付ボルトの頭部を冷
部1片に埋設することにより、冷却片の放熱面にボルト
取付用の切欠部を形成する必要がなく、その分数熱面を
大きく設定することができる。
In the semiconductor device of the present invention, by embedding the head of the tightening bolt in one piece of the cold part, there is no need to form a notch for attaching the bolt on the heat radiation surface of the cooling piece, and the fractional heat surface is set large. can do.

〔実施例〕〔Example〕

第1図はこの発明の一実施例である半導体装置を示す一
部切欠側面図である。同図に示すように、この半導体装
置は、半導体素子11と電流端子12.15と、セラミ
ック等の絶縁板13.16と、銅またはアルミニウム等
により構成される冷却片14と、板ばね等の金属弾性押
圧体17とからなる積層体を、4個の締付ボルト18.
18(同図において2個のみ示す)により加圧挟持した
半導体装置である。上記4個の締付ボルト18.18の
頭部18a、18aはあらかじめ冷部片14内の四隅に
鋳物あるいはダイガスト製法によりそれぞれ埋設されて
おり、上記積層体を加圧挟持するにあたり、締結ボルト
18.18の先端部18b。
FIG. 1 is a partially cutaway side view showing a semiconductor device which is an embodiment of the present invention. As shown in the figure, this semiconductor device includes a semiconductor element 11, a current terminal 12.15, an insulating plate 13.16 made of ceramic or the like, a cooling piece 14 made of copper or aluminum, etc., and a plate spring or the like. The laminate consisting of the metal elastic pressing body 17 is secured with four tightening bolts 18.
18 (only two are shown in the figure) are semiconductor devices that are held under pressure. The heads 18a, 18a of the four tightening bolts 18.18 are embedded in advance in the four corners of the cold piece 14 by casting or die-casting. .18 tip 18b.

18bを金属弾性押圧体17に貫通させその先端部18
b、18bにナツト19.19をそれぞれ螺合すること
により、金属弾性押圧体17を冷却片4側へ押圧し、こ
れにより上記積層体を加圧挟持している。
18b is passed through the metal elastic pressing body 17, and its tip 18
By screwing nuts 19 and 19 into b and 18b, the metal elastic pressing body 17 is pressed toward the cooling piece 4, thereby clamping the laminate under pressure.

この装置の組付手順は、まず締付ボルト18゜18の先
端部18b、18bが上方へ向くように、冷却片14を
配置し、絶縁板13、電流端子12、半導体素子11、
電流端子15および絶縁板16を順次積重ね、その後金
属弾性押圧体17で絶縁板16を下方へ押付けるように
ナツト19.19を締付ボルト18.18に締結する。
The procedure for assembling this device is to first arrange the cooling piece 14 so that the tips 18b, 18b of the tightening bolts 18.degree.
The current terminal 15 and the insulating plate 16 are stacked one on top of the other, and then the nuts 19, 19 are fastened to the tightening bolts 18, 18 so that the insulating plate 16 is pressed downward by the metal elastic pressing body 17.

この半導体装置によれば、締付ボルト18,18の頭部
18a、18aを冷却片14の内部に埋設しているため
、例えば第2図に示す従来の半導体装置のように冷FJ
I片14の放熱面14aにボルト取付用の切欠部10,
10を形成する必要がなく、その分数熱面14aを大き
く設定することができる。つまり、放熱面14aを図示
しない外部冷却片に圧接するように取付けた際に、冷却
片14と上記外部冷N1片との接合面積を大きく確保す
ることができ、半導体素子11の動作中に生じる熱が冷
却片14から上記外部冷却片に効率よく伝達されて放熱
性能に優れる。この結果、例えば半導体装置の熱に起因
する通電能力の低下を防止することができる。
According to this semiconductor device, the heads 18a, 18a of the tightening bolts 18, 18 are buried inside the cooling piece 14, so that, for example, as in the conventional semiconductor device shown in FIG.
A notch 10 for bolt attachment is provided on the heat dissipation surface 14a of the I piece 14,
10, and the fractional heating surface 14a can be set large. In other words, when the heat dissipation surface 14a is mounted so as to be in pressure contact with an external cooling piece (not shown), a large joint area between the cooling piece 14 and the external cooling N1 piece can be secured, and the Heat is efficiently transferred from the cooling piece 14 to the external cooling piece, resulting in excellent heat dissipation performance. As a result, it is possible to prevent a decrease in current carrying capacity due to heat in the semiconductor device, for example.

また、締付ボルト18.18が冷11片14に固定され
ているため、半導体装置の組立作業において、上記第2
図に示す従来例では必要な締付ボル上固定治具が不要に
なって組立作業も簡素化される。
In addition, since the tightening bolts 18 and 18 are fixed to the cold 11 piece 14, the above-mentioned second
In the conventional example shown in the figure, the necessary jig for fixing the tightening bolt is no longer necessary, simplifying the assembly work.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明の半導体装置によれば、冷却片
に締付ボルトの頭部を埋設しているため、冷却片の放熱
面に締付ボルト取付用の切欠部を形成する必要がなく、
その分冷却片の放熱面を大きく設定できて放熱性能に優
れるという効果が得られる。
As described above, according to the semiconductor device of the present invention, since the head of the tightening bolt is embedded in the cooling piece, there is no need to form a notch for attaching the tightening bolt on the heat radiation surface of the cooling piece. ,
Accordingly, the heat dissipation surface of the cooling piece can be set larger and the effect of excellent heat dissipation performance can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の一実施例である半導体装置を示す一
部切欠側面図、第2図は従来の半導体装置を示す一部切
欠側面図である。 図において、11は半導体素子、12.15は電流端子
、13.16は絶縁板、14は冷却片、17は金属弾性
押圧体、18は締付ボルト、18aは頭部である。 なお、各図中同一符号は同一または相当部分を示す。 18a:頭部 18b−先端#19;デアト 第25i11
FIG. 1 is a partially cutaway side view showing a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a partially cutaway side view showing a conventional semiconductor device. In the figure, 11 is a semiconductor element, 12.15 is a current terminal, 13.16 is an insulating plate, 14 is a cooling piece, 17 is a metal elastic pressing body, 18 is a tightening bolt, and 18a is a head. Note that the same reference numerals in each figure indicate the same or corresponding parts. 18a: Head 18b - Tip #19; Deato No. 25i11

Claims (1)

【特許請求の範囲】[Claims] (1)半導体素子の一方の主電極面に第1の電流端子、
第1の絶縁板および冷却片を順次積重ねるとともに、他
方の主電極面に第2の電流端子、第2の絶縁板および弾
性押圧体を順次積重ねた積層体を、締付ボルトにより加
圧挟持した半導体装置において、 前記締付ボルトの頭部を前記冷却片に埋設したことを特
徴とする半導体装置。
(1) A first current terminal on one main electrode surface of the semiconductor element,
The first insulating plate and the cooling piece are sequentially stacked, and the second current terminal, the second insulating plate, and the elastic pressing body are sequentially stacked on the other main electrode surface, and the laminate is clamped under pressure with a tightening bolt. A semiconductor device characterized in that the head of the tightening bolt is embedded in the cooling piece.
JP24201188A 1988-09-26 1988-09-26 Semiconductor device Pending JPH0289352A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24201188A JPH0289352A (en) 1988-09-26 1988-09-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24201188A JPH0289352A (en) 1988-09-26 1988-09-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0289352A true JPH0289352A (en) 1990-03-29

Family

ID=17082934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24201188A Pending JPH0289352A (en) 1988-09-26 1988-09-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0289352A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999040625A1 (en) * 1998-02-06 1999-08-12 Intel Corporation Thermal bus bar design for an electronic cartridge
US6845012B2 (en) 2000-04-19 2005-01-18 Denso Corporation Coolant cooled type semiconductor device
WO2013121691A1 (en) * 2012-02-14 2013-08-22 パナソニック株式会社 Semiconductor device and method for manufacturing same
JP2016194283A (en) * 2015-04-01 2016-11-17 株式会社デンソー Starter

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999040625A1 (en) * 1998-02-06 1999-08-12 Intel Corporation Thermal bus bar design for an electronic cartridge
US5990549A (en) * 1998-02-06 1999-11-23 Intel Corporation Thermal bus bar design for an electronic cartridge
US6845012B2 (en) 2000-04-19 2005-01-18 Denso Corporation Coolant cooled type semiconductor device
EP1148547A3 (en) * 2000-04-19 2005-06-15 Denso Corporation Coolant cooled type semiconductor device
US7027302B2 (en) 2000-04-19 2006-04-11 Denso Corporation Coolant cooled type semiconductor device
US7106592B2 (en) 2000-04-19 2006-09-12 Denso Corporation Coolant cooled type semiconductor device
US7248478B2 (en) 2000-04-19 2007-07-24 Denso Corporation Coolant cooled type semiconductor device
US7250674B2 (en) 2000-04-19 2007-07-31 Denso Corporation Coolant cooled type semiconductor device
EP1742265A3 (en) * 2000-04-19 2011-02-16 Denso Corporation Coolant cooled type semiconductor device
EP2234154A3 (en) * 2000-04-19 2011-02-16 Denso Corporation Coolant cooled type semiconductor device
WO2013121691A1 (en) * 2012-02-14 2013-08-22 パナソニック株式会社 Semiconductor device and method for manufacturing same
CN103843132A (en) * 2012-02-14 2014-06-04 松下电器产业株式会社 Semiconductor device and method for manufacturing same
US9076752B2 (en) 2012-02-14 2015-07-07 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device and method for manufacturing the same
EP2816594A4 (en) * 2012-02-14 2015-08-12 Panasonic Ip Man Co Ltd Semiconductor device and method for manufacturing same
JP2016194283A (en) * 2015-04-01 2016-11-17 株式会社デンソー Starter

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