JPS5918634A - Manufacturing device of semiconductor device - Google Patents
Manufacturing device of semiconductor deviceInfo
- Publication number
- JPS5918634A JPS5918634A JP12725382A JP12725382A JPS5918634A JP S5918634 A JPS5918634 A JP S5918634A JP 12725382 A JP12725382 A JP 12725382A JP 12725382 A JP12725382 A JP 12725382A JP S5918634 A JPS5918634 A JP S5918634A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- semiconductor
- photo resist
- pattern
- conveyor belt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は半導装置の製造装置に係シ、特にフォトレジ
ストのパターン形成に使用する現像装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for manufacturing semiconductor devices, and more particularly to a developing device used for patterning photoresist.
従来、フォトレジストパターンニング工程を経て表面に
７オトレジストパターンが形成された半導体基板は選択
エツチングに対する耐エツチング性向上が目的で１００
℃〜２００℃の恒温雰囲気中に保持し熱処理が施される
が、この熱処理のみによって得られるフォトレジストの
耐エツチング性は、微細パターンや多層構造の半導体装
置に対しては、満足できるものでは無くエツチング処理
中にフォトレジストが剥離して所期のパターンが再現さ
れなかったり、多層構造の段部におけるピンホールによ
って保護されるべき部分がエツチングされたシ、部分的
な密着不良によってパターン形状が崩れたりして、半導
体装置の歩留低下や品質低下を誘発していた。Conventionally, semiconductor substrates with 7 photoresist patterns formed on their surfaces through a photoresist patterning process have been etched with 100% etching resistance for the purpose of improving etching resistance against selective etching.
Heat treatment is performed by holding the photoresist in a constant temperature atmosphere between ℃ and 200℃, but the etching resistance of the photoresist obtained only by this heat treatment is not satisfactory for semiconductor devices with fine patterns and multilayer structures. During the etching process, the photoresist may peel off and the desired pattern cannot be reproduced, or the part that should be protected by pinholes in the steps of the multilayer structure may be etched, or the pattern shape may collapse due to partial adhesion failure. This caused a decline in yield and quality of semiconductor devices.
この発明の目的は、微細パターンや多層構造の半導体装
置において歩留低下や品質低下をもたらさない半導体製
造装置を提供する事にある。An object of the present invention is to provide a semiconductor manufacturing apparatus that does not cause a decrease in yield or quality in semiconductor devices with fine patterns or multilayer structures.
この発明の半導体製造装置は、フォトレジストのパター
ン形状グが完了した半導体基板表面に柴外線を全面照射
できる光源を有する現像装置である。The semiconductor manufacturing apparatus of the present invention is a developing device having a light source capable of irradiating the entire surface of a semiconductor substrate with a ray of light onto the surface of a semiconductor substrate on which a photoresist pattern has been formed.
次にこの発明の一実施例ｒつき図面を用いて説明する。Next, one embodiment of the present invention will be described using the accompanying drawings.
第１図は、この発明の一実施例を説明するために７オト
レジストパターンを形式させる現像装置の断面図である
。FIG. 1 is a sectional view of a developing device for forming seven photoresist patterns to explain one embodiment of the present invention.
この実施例の現像装置は、フートレジスト工程において
、フォトマスク転写露光工程まで完了した半導体基板を
ある数枚単位で収納しているキャリア１よυ搬送ベルト
２に乗せられ現像後ｆｆ１３内に送られ所定の現像処理
を行ない、フォトレジスト膜のパターンニングが完了し
た半導体基板４を搬送ベルト５で送υながら、同時に半
導体基板４の表面に紫外線を全面照射できる光源６を廟
する現像装置である。すなわち搬送ベル）５．５’上に
乗せられた半導体基板４の表面のフォトレジスト膜パタ
ーンは水銀ランプ６によシ全面照射され紫外線による光
重合が進行するため、次工程における熱重合と合わせて
効果的に耐エツチング性が向上する。フォトマスク転写
露光工程で既にフォトレジスト膜は光重合反応を経過し
ているが一般に、この場合の重合反応は半導体基板表面
における反射の影響で定在波効果が発生したり、フォト
レジスト中の架橋剤の偏析及び吸、光剤の添加によシ完
全なものでは無い。従って現像後のフォトレジストパタ
ーン中のモノマー残渣を再び紫外線照射によシボリマー
化する。したがって該フートレジスト工程
はぼ完全な重合膜が得られるため、耐エツチング性に優
れ、微細パターンのエツチング中の７オトレジスト膜パ
ターンの剥脱や多層構造における段部のピンホール発生
が無く歩留低下のない優れた半導体装置を得る事ができ
る。In the developing device of this embodiment, in the foot resist process, a carrier 1 containing a certain number of semiconductor substrates, which have been completed up to the photomask transfer exposure process, is placed on a υ conveying belt 2 and sent into the FF 13 after development. This developing device carries out a predetermined development process and transports the semiconductor substrate 4 on which patterning of the photoresist film has been completed using a conveyor belt 5, and at the same time includes a light source 6 capable of irradiating the entire surface of the semiconductor substrate 4 with ultraviolet rays. In other words, the photoresist film pattern on the surface of the semiconductor substrate 4 placed on the conveyor bell 5.5' is irradiated on the entire surface by the mercury lamp 6, and photopolymerization by ultraviolet rays proceeds, so that it is combined with the thermal polymerization in the next step. Etching resistance is effectively improved. In the photomask transfer exposure process, the photoresist film has already undergone a photopolymerization reaction, but in general, the polymerization reaction in this case causes a standing wave effect due to reflection on the semiconductor substrate surface, or crosslinking in the photoresist. However, it is not perfect due to the segregation of the agent and the addition of a light agent. Therefore, the monomer residue in the photoresist pattern after development is again irradiated with ultraviolet rays to form a wrinkler. Therefore, this footresist process yields a nearly perfect polymerized film, which has excellent etching resistance, and there is no peeling of the 7-footresist film pattern during etching of fine patterns and no generation of pinholes at the steps in the multilayer structure, resulting in no reduction in yield. Therefore, it is possible to obtain an excellent semiconductor device.
上述の実施例において、図面では現像装置に本装置を取
シ付けて説明したが単独の装置Ｋｔとしての適用も可能
であシ、又、フォトレジスト膜パターン形成後から選択
エツチング前までの、−ノ“べての装置に取伺は適用で
き、更に半導体ウェハース裏面のエツチングをするだめ
の表面保睦膜となるべきパターンニングされていないフ
ォトレジスト膜を光重合させ強化するために塗布装置の
アウト側に取り付は適用することもできる。又、光源は
、フォトレジストの感光波長領域に応じて、水銀ランプ
をキャノン・ヘリウムテンプ２重水素ランプなどに変更
できる事は言うまでもない。In the above-mentioned embodiments, although the present device was attached to the developing device in the drawings, it is also possible to apply it as a stand-alone device Kt. The inspection can be applied to all equipment in the world, and it is also possible to use the out-of-coating equipment to photopolymerize and strengthen the unpatterned photoresist film that serves as a surface protection film for etching the backside of semiconductor wafers. It can also be mounted on the side.It goes without saying that the light source can be changed from a mercury lamp to a Canon Helium Temp di-deuterium lamp, etc., depending on the wavelength range to which the photoresist is sensitive.
第１図は本発明の一実施例を説明するだめの半導体製造
装置の断面図である。
丁Δ〕、図において、
１・・・・・・半導体基板収納キャリア、２・・・・・
・搬送ベルト、３・・・・・・現像装置％ ４．４’
ｌ・４″・・・・・・半導体基板、５．５′・・・・・
・搬送ベル）、６．６’、６”・・・・・・水銀ランプ
である。
第 ｌ 区FIG. 1 is a sectional view of a semiconductor manufacturing apparatus for explaining an embodiment of the present invention. In the figure, 1...Semiconductor substrate storage carrier, 2...
・Transport belt, 3...Developing device% 4.4'
l・4''...Semiconductor substrate, 5.5'...
・Transportation bell), 6.6', 6"...mercury lamp. Section l
Claims (1)
スクパターンを焼き付は転写した後、所程の７オトレジ
ストパターンを得るために使用する現像装置において、
現像処理によって所望のフォトレジストパターンニング
が完了した後、柴外線を照射する事のできる光源を有し
ている現像装置を含む半導体装置の製造装置。After printing or transferring the mask pattern onto the surface of the semiconductor wafer coated with photoresist, in the developing device used to obtain the desired 7-photoresist pattern,
A semiconductor device manufacturing apparatus including a developing device having a light source capable of irradiating with Cybex rays after desired photoresist patterning is completed by a developing process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12725382A JPS5918634A (en) | 1982-07-21 | 1982-07-21 | Manufacturing device of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12725382A JPS5918634A (en) | 1982-07-21 | 1982-07-21 | Manufacturing device of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5918634A true JPS5918634A (en) | 1984-01-31 |
Family
ID=14955469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12725382A Pending JPS5918634A (en) | 1982-07-21 | 1982-07-21 | Manufacturing device of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5918634A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8215781B2 (en) | 2009-01-29 | 2012-07-10 | Murakami Corporation | Mirror for an automobile |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51111072A (en) * | 1975-03-26 | 1976-10-01 | Hitachi Ltd | Photo etching method |
| JPS5314568A (en) * | 1976-07-26 | 1978-02-09 | Hitachi Ltd | Photolithography treatment system device |
| JPS54163680A (en) * | 1978-06-15 | 1979-12-26 | Fujitsu Ltd | Pattern forming method |
-
1982
- 1982-07-21 JP JP12725382A patent/JPS5918634A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51111072A (en) * | 1975-03-26 | 1976-10-01 | Hitachi Ltd | Photo etching method |
| JPS5314568A (en) * | 1976-07-26 | 1978-02-09 | Hitachi Ltd | Photolithography treatment system device |
| JPS54163680A (en) * | 1978-06-15 | 1979-12-26 | Fujitsu Ltd | Pattern forming method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8215781B2 (en) | 2009-01-29 | 2012-07-10 | Murakami Corporation | Mirror for an automobile |
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