JPS5918198A - デバイス基板用単結晶シリコン - Google Patents

デバイス基板用単結晶シリコン

Info

Publication number
JPS5918198A
JPS5918198A JP12411882A JP12411882A JPS5918198A JP S5918198 A JPS5918198 A JP S5918198A JP 12411882 A JP12411882 A JP 12411882A JP 12411882 A JP12411882 A JP 12411882A JP S5918198 A JPS5918198 A JP S5918198A
Authority
JP
Japan
Prior art keywords
oxygen
single crystal
crystal silicon
device base
oxygen concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12411882A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0339998B2 (cg-RX-API-DMAC7.html
Inventor
Shozo Shirai
省三 白井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin-Etsu Handotai Co Ltd
Original Assignee
Shin-Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co Ltd filed Critical Shin-Etsu Handotai Co Ltd
Priority to JP12411882A priority Critical patent/JPS5918198A/ja
Publication of JPS5918198A publication Critical patent/JPS5918198A/ja
Publication of JPH0339998B2 publication Critical patent/JPH0339998B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP12411882A 1982-07-16 1982-07-16 デバイス基板用単結晶シリコン Granted JPS5918198A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12411882A JPS5918198A (ja) 1982-07-16 1982-07-16 デバイス基板用単結晶シリコン

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12411882A JPS5918198A (ja) 1982-07-16 1982-07-16 デバイス基板用単結晶シリコン

Publications (2)

Publication Number Publication Date
JPS5918198A true JPS5918198A (ja) 1984-01-30
JPH0339998B2 JPH0339998B2 (cg-RX-API-DMAC7.html) 1991-06-17

Family

ID=14877364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12411882A Granted JPS5918198A (ja) 1982-07-16 1982-07-16 デバイス基板用単結晶シリコン

Country Status (1)

Country Link
JP (1) JPS5918198A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100461893B1 (ko) * 2000-12-20 2004-12-16 미츠비시 스미토모 실리콘 주식회사 실리콘 웨이퍼 및 이것에 사용되는 실리콘 단결정의제조방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329677A (en) * 1976-08-30 1978-03-20 Burroughs Corp Method of and apparatus for chemically treating specimen only on one side thereof
JPS5617315A (en) * 1979-07-24 1981-02-19 Nippon Telegr & Teleph Corp <Ntt> Connector for optical signal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329677A (en) * 1976-08-30 1978-03-20 Burroughs Corp Method of and apparatus for chemically treating specimen only on one side thereof
JPS5617315A (en) * 1979-07-24 1981-02-19 Nippon Telegr & Teleph Corp <Ntt> Connector for optical signal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100461893B1 (ko) * 2000-12-20 2004-12-16 미츠비시 스미토모 실리콘 주식회사 실리콘 웨이퍼 및 이것에 사용되는 실리콘 단결정의제조방법

Also Published As

Publication number Publication date
JPH0339998B2 (cg-RX-API-DMAC7.html) 1991-06-17

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