JPS5917976B2 - Wire bonding method - Google Patents
Wire bonding methodInfo
- Publication number
- JPS5917976B2 JPS5917976B2 JP54111284A JP11128479A JPS5917976B2 JP S5917976 B2 JPS5917976 B2 JP S5917976B2 JP 54111284 A JP54111284 A JP 54111284A JP 11128479 A JP11128479 A JP 11128479A JP S5917976 B2 JPS5917976 B2 JP S5917976B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- capillary
- bond
- point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
- H01L2224/48096—Kinked the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85196—Translational movements involving intermediate connecting steps before cutting the wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
- H01L2224/85207—Thermosonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Abstract
Description
【発明の詳細な説明】 本発明はワイヤボンディング方法に関するものである。[Detailed description of the invention] The present invention relates to a wire bonding method.
半導体装置、集積回路装置等の製造においては、ペレッ
ト上のパッドと外部リードとをワイヤで接続する作業が
あり、このワイヤ接続の方法として超音波ワイヤボンデ
ィング方法及び超音波熱圧着ワイヤボンディング方法が
知られている。In the manufacture of semiconductor devices, integrated circuit devices, etc., there is work to connect pads on pellets and external leads with wires, and the ultrasonic wire bonding method and the ultrasonic thermocompression wire bonding method are known methods for this wire connection. It is being
この方法においては、ワイヤをボンド点に押し付けるた
めのツール下端よりワイヤが逃げないようにワイヤの延
在する方向とツールの振動方向を一致させることを必要
とする。そこで最近、このような方向性を考慮しなくて
もよいように、ツールに代えて筒状のキャピラリにワイ
ヤを挿通して用いることが行なわれている。In this method, it is necessary to match the direction in which the wire extends and the direction of vibration of the tool so that the wire does not escape from the lower end of the tool for pressing the wire against the bonding point. Therefore, recently, in order to eliminate the need to consider such directionality, a wire has been inserted into a cylindrical capillary instead of a tool.
し力化ながら、筒状キャピラリを用いて超音波ワイヤボ
ンディングを行なう場合、切断によつてワイヤ先端部の
折曲げられた方向と次にボンデイン9 グされるボンド
点間の方向とが大きくずれていると、次の第1ボンド点
のワイヤ接合部の付け根に大きな力が加わり、破断、ク
ラック等が発生する欠点がある。従来、上記のような欠
点を解消するものとして、5 特開昭53−10416
7号公報に示す方法が知られている。When performing ultrasonic wire bonding using a cylindrical capillary, the direction in which the tip of the wire is bent due to cutting and the direction between the bond points to be bonded next may deviate greatly. If it is, a large force is applied to the base of the wire joint at the next first bonding point, resulting in breakage, cracks, etc. Conventionally, as a solution to the above-mentioned drawbacks, 5 Japanese Patent Application Laid-Open No. 53-10416
A method shown in Publication No. 7 is known.
この方法は第1ボンド、第2ボンドを行なつた後、ワイ
ヤを引張つて前記第2ボンド部の近傍で切断させる際、
ワイヤを次にワイヤの張られる第1ボンド点より第2ボ
ンド点の方向にo 向つて引張つてワイヤを切断し、キ
ャピラリ下端から突出するワイヤ先端部を次のワイヤの
張られる方向に一致させるようにしている。しかしなが
ら、この方法はワイヤ接続された方向に対して切断方向
が450以上になると、接続’5 された第2ボンド部
には切断による大きなねじり力が加わり、第2ボンド部
がはがれてしまうか又は付きが劣化するので、ワイヤ接
続された方向に対する切断方向は300以内に限られて
いる。In this method, after performing the first bond and the second bond, when the wire is pulled and cut near the second bond part,
Next, pull the wire in the direction o from the first bond point where the wire is stretched to the second bond point, and cut the wire so that the tip of the wire protruding from the lower end of the capillary matches the direction in which the next wire is stretched. I have to. However, in this method, when the cutting direction is 450 degrees or more with respect to the direction in which the wires are connected, a large twisting force is applied to the connected second bond part due to the cutting, and the second bond part may be peeled off or Since the attachment deteriorates, the cutting direction is limited to within 300 degrees with respect to the direction in which the wire is connected.
本発明は上記従来技術の欠点に鑑みなされたもj0ので
、ワイヤの接続された方向に対するワイヤ切断方向が大
きくても何んらボンディング品質を低下させることなく
ボンドを行なうことができるワイヤボンディング方法を
提供することを目的とする。■5 以下、本発明を図示
の実施例により説明する。The present invention has been made in view of the above-mentioned drawbacks of the prior art, and therefore provides a wire bonding method that can perform bonding without any deterioration in bonding quality even if the wire cutting direction is large with respect to the direction in which the wires are connected. The purpose is to provide. (5) The present invention will be explained below with reference to illustrated embodiments.
図は本発明のワイヤボンディング方法の一実施例を示す
。円筒状のキャピラリ1にはワイヤ2が挿通され、キヤ
ピラリ1の下端中央から延在するワイヤ2を第1ボンド
点であるペレツト3のパツド4Aに押付けながらキャピ
ラリ1を振動させてボンデイングし、その後キヤピラリ
1からワイヤ2を繰り出しながらキャピラリ1をリード
5A側の第2ボンド点6Aに移動させ、ワイヤ2を第2
ボンド点6A面に押付けながら振動させて第2ボンド点
6Aにボンデイングする。以上は従来と同じである。本
発明は続いて第2ボンド点6Aにボンデイングされたリ
ード5Aの近傍に存在する使用しないリード5Cにすて
ボンド7Aする。The figure shows an embodiment of the wire bonding method of the present invention. A wire 2 is inserted into the cylindrical capillary 1, and bonding is performed by vibrating the capillary 1 while pressing the wire 2 extending from the center of the lower end of the capillary 1 against the pad 4A of the pellet 3, which is the first bonding point. While feeding out the wire 2 from the capillary 1, move the capillary 1 to the second bond point 6A on the lead 5A side.
Bonding is carried out to the second bond point 6A by vibrating it while pressing against the surface of the bond point 6A. The above is the same as before. The present invention then performs a bond 7A by discarding an unused lead 5C existing in the vicinity of the lead 5A bonded to the second bond point 6A.
ここで、すてボンド7Aは、次にボンデイングする第1
ボンド点4Bと第2ボンド点6Bを結ぶ方向Aに第2ボ
ンド点6Aよりリード5Cにキヤピラリ1を移動させて
行なう、その後、前記A方向にキヤピラリ1を移動させ
てワイヤ2をすてボンド7A近傍で切断させる。このよ
うに、第2ボンド点6Aから前記A方向にキヤピラリ1
を移動させてすてボンド7Aを行ない、ワイヤ切断時に
はそのまま同じ方向にキヤピラリ1を移動させてワイヤ
2を切断するので、第2ボンド点6Aは勿論のこと、す
てボンド7Aにもねじり力が加わらなく、より良いボン
デイングが行なえる。Here, the discarded bond 7A is the first bond to be bonded next.
This is done by moving the capillary 1 from the second bond point 6A to the lead 5C in the direction A that connects the bond point 4B and the second bond point 6B.Then, move the capillary 1 in the direction A, discarding the wire 2, and bond 7A. Cut it nearby. In this way, the capillary 1 is connected in the direction A from the second bond point 6A.
When cutting the wire, the capillary 1 is moved in the same direction to cut the wire 2, so twisting force is applied not only to the second bond point 6A but also to the bond 7A. Better bonding can be achieved without adding additional components.
なお、前記したすてボンド7Aは第2ボンド後にすべて
行なつてもよいが、ワイヤ接続された方向に対して切断
方向が300以.上の時にのみ行なうようにしてもよい
。Note that all of the above-described bonding steps 7A may be performed after the second bonding, but if the cutting direction is 300 degrees or more with respect to the direction in which the wires are connected. You may choose to do this only at the above times.
以上の説明から明らかな如く、本発明になるワイヤボン
デイング方法によれば、第2ボンドされたリードの近傍
に存在する使用しないリードにすてボンドし、しかも第
2ボンドからすてボンドの方向及びワイヤを引張つて切
断する方向は、それぞれ次にボンドされる第1ボンド点
と第2ボンド点を結ぶ方向であるので、ワイヤ接続され
た方向に対して次にワイヤが張られる方向が大きくても
ボンドされた第2ボンドの品質を低下させることもない
。As is clear from the above description, according to the wire bonding method of the present invention, the unused lead existing in the vicinity of the second bonded lead is discarded and bonded, and the direction from the second bond to the discarded bond is The direction in which the wire is pulled and cut is the direction that connects the first and second bond points that will be bonded next, so even if the direction in which the wire is stretched next is larger than the direction in which the wire is connected, There is no deterioration in the quality of the second bond.
図は本発明になるワイヤボンデイング方法の・一実施例
を示す斜視図である。
1・・・キヤピラリ、2・・・ワイヤ、4A,4B・・
・第1ボンド点、5A,5B,5C・・・リード、6A
,6B・・・第2ボンド点、7A・・・すてボンド。The figure is a perspective view showing an embodiment of the wire bonding method according to the present invention. 1... Capillary, 2... Wire, 4A, 4B...
・1st bond point, 5A, 5B, 5C...Lead, 6A
, 6B...second bond point, 7A...stop bond.
Claims (1)
点と第2ボンド点を結ぶ方向にキャピラリを移動させて
前記ボンドされたリードの近傍に存在する不使用のリー
ドにすてボンドを行ない、その後前記した次の第1ボン
ド点と第2ボンド点を結ぶ方向にワイヤを引張つてワイ
ヤを切断することを特徴とするワイヤボンディング方法
。1 After bonding to the second bond point of the lead, move the capillary in the direction connecting the next first bond point and second bond point and discard the bond to an unused lead near the bonded lead. The wire bonding method is characterized in that the wire is cut by pulling the wire in the direction connecting the next first bond point and the second bond point.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54111284A JPS5917976B2 (en) | 1979-08-31 | 1979-08-31 | Wire bonding method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54111284A JPS5917976B2 (en) | 1979-08-31 | 1979-08-31 | Wire bonding method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5636141A JPS5636141A (en) | 1981-04-09 |
JPS5917976B2 true JPS5917976B2 (en) | 1984-04-24 |
Family
ID=14557320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54111284A Expired JPS5917976B2 (en) | 1979-08-31 | 1979-08-31 | Wire bonding method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5917976B2 (en) |
-
1979
- 1979-08-31 JP JP54111284A patent/JPS5917976B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5636141A (en) | 1981-04-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4860128B2 (en) | Wire bonding method | |
JPS61125062A (en) | Method and device for attaching pin | |
JPH10112471A (en) | Wire bonding method | |
JPS5917976B2 (en) | Wire bonding method | |
JPH01276729A (en) | Wire bonding | |
JPS6052585B2 (en) | wire bonding method | |
JP3322642B2 (en) | Method for manufacturing semiconductor device | |
JP4219781B2 (en) | Manufacturing method of semiconductor device | |
JP2003086621A (en) | Semiconductor device and manufacturing method therefor | |
JP6973831B2 (en) | Wire bonding equipment | |
JPH05326601A (en) | Wire bonding method | |
JPH0428241A (en) | Manufacture of semiconductor device | |
JP3202193B2 (en) | Wire bonding method | |
JPH1092861A (en) | Capillary for wire bonding | |
JP2003007756A (en) | Connection structure using wire bonding | |
JPH04256330A (en) | Method and apparatus for wire bonding | |
JPS58148432A (en) | Wire bonding | |
JPS615536A (en) | Capillary and wire bonding device employing it | |
JPH1041332A (en) | Wire bonder | |
JPH1041333A (en) | Capillary and wire bonding method | |
JP2000012598A (en) | Capillary, wire bonding method and apparatus using the same, and manufacture thereof | |
JPH03127844A (en) | Bonding equipment and bonding method | |
JPS61117846A (en) | Manufacture of bonding metallic projection | |
JPS61125029A (en) | Capillary of wire bonder | |
JPH10199913A (en) | Wire-bonding method |