JPS59178784A - Circuit for preventing surge breakdown of semiconductor laser - Google Patents

Circuit for preventing surge breakdown of semiconductor laser

Info

Publication number
JPS59178784A
JPS59178784A JP5239383A JP5239383A JPS59178784A JP S59178784 A JPS59178784 A JP S59178784A JP 5239383 A JP5239383 A JP 5239383A JP 5239383 A JP5239383 A JP 5239383A JP S59178784 A JPS59178784 A JP S59178784A
Authority
JP
Japan
Prior art keywords
semiconductor laser
resistor
circuit
laser
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5239383A
Other languages
Japanese (ja)
Inventor
Kimio Tateno
立野　公男
Keiji Kataoka
慶二 片岡
Seiji Yonezawa
米沢　成二
Noriyuki Shige
重　則幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5239383A priority Critical patent/JPS59178784A/en
Publication of JPS59178784A publication Critical patent/JPS59178784A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enhance the reliability by improving the strong characteristic against the surge breakdown of the titled laser by a method wherein the circuit for preventing the surge breakdown is monolithically built in said laser or incorporated in hybridity. CONSTITUTION:A semiconductor laser driving circuit 2 is connected to the semiconductor laser 1 via resistor R1, and a resistor (r) and a clamping diode 3 are connected in parallel with this circuit and in series, thus constructing a protection circuit. In case of manufacturing this laser 1 by crystal growth, an electrode 8, a semiconductor laser active layer 7, a P-N junction (clamping diode) 5, etc. are formed on the earth 11 and a resistor 4 (R1) is grown on said junction 5. This resistor 4 is connected to a pin 10 by wire bonding 9, and the P-N junction caused by the clamping diode 3 is grown on the resistor 4. A resistor 6 (r) is grown thereon and connected to the earth 11 by wire bonding. Then, the releliability is improved by buliding the protection circuit monolithically in the semiconductor alser.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は半導体レーザの保護回路に係り、特にサージ破
壊防止に好適な回路に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a protection circuit for a semiconductor laser, and particularly to a circuit suitable for preventing surge damage.

〔発明の背景〕[Background of the invention]

最近各社で、光デイスクヘッドやレーづ′フ゛１ノンタ
用の光源として、半導体レーザ〃：市販でれるにいたっ
ている。しかシフ、これらの半２序体レーザでは、保護
回路が内蔵されておらす、これを駆動回路に接続した場
合、しばしば電源その他のサージのため、瞬間的にレー
ザが発振し、端面破壊、あるいは内部劣化が生じたり、
１だ、逆方向に電圧がかかった場合、絶縁破壊が生じる
という＄態が起きていた。これに対処するため、ノ＜ツ
ケージの外部に抵抗ｆコンデンサあるいはダイオードを
つけ、保護回路としていたが、このような抵抗や、コン
デ／す全接続する時ですら、サージ破壊が起＠ることも
あった。Recently, various companies have begun to commercially sell semiconductor lasers as light sources for optical disk heads and laser printers. However, these semi-binary lasers have a built-in protection circuit, and when this is connected to the drive circuit, the laser often oscillates momentarily due to power surges or other sources, resulting in end face destruction or damage. Internal deterioration may occur,
1. If voltage was applied in the opposite direction, dielectric breakdown would occur. To deal with this, a resistor (capacitor or diode) was installed outside the circuit cage as a protection circuit, but even when such resistors and capacitors are all connected, surge damage may occur. there were.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、上述の問題点全解消し、半導体レーザ
の信頼性や取り扱い易さの向上に役に立つ破壊防止保護
回路材の半導体レーザを提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor laser with a destruction prevention protection circuit material that solves all of the above-mentioned problems and is useful for improving the reliability and ease of handling of the semiconductor laser.

〔発明の概要〕[Summary of the invention]

すなわち、本発明においては、サージ破壊防止回路を、
半導体レーザに七ノリシックにつくシつけるか、あるい
はハイブリッドにパッケージに内蔵する形を取ることに
より、信頼性のより高い素子とするものである。That is, in the present invention, the surge destruction prevention circuit is
The device can be made more reliable by attaching it to a semiconductor laser or by incorporating it in a hybrid package.

〔発明の実施例〕[Embodiments of the invention]

第１図は本発明による保護回路を示すものである。半導
体レーザ１は駆動回路２により動作する。FIG. 1 shows a protection circuit according to the invention. The semiconductor laser 1 is operated by a drive circuit 2.

半導体レーザｌに逆方向の電圧がかかるとクランプダイ
オード３に電流が流れて半導体レーザ１を保護する。こ
の時、クランプダイオード３と、これと並列に接続され
た半導体レーザ１を含む回路によって決る時定数が、ク
ランプダイオード３の容量Ｃ２と、内部抵抗あるいは外
部抵抗ｒによって決る時定数に、はぼ等しいか、あるい
は大きくなるようにしなければならない。When a reverse voltage is applied to the semiconductor laser 1, a current flows through the clamp diode 3 to protect the semiconductor laser 1. At this time, the time constant determined by the circuit including the clamp diode 3 and the semiconductor laser 1 connected in parallel with it is approximately equal to the time constant determined by the capacitance C2 of the clamp diode 3 and the internal resistance or external resistance r. Or you have to make it bigger.

一方、半導体レーザ１に順方向の高周波サージ電圧がか
かった時には、半導体レーザの内部抵抗、あるいは外部
抵抗Ｒ１，容量Ｃ１によってバイパスフィルターが形成
され、半導体レーザＩＫは電流が流れず、保護される結
果となる。On the other hand, when a forward high-frequency surge voltage is applied to the semiconductor laser 1, a bypass filter is formed by the semiconductor laser's internal resistance or the external resistance R1 and capacitance C1, and the semiconductor laser IK is protected because no current flows. becomes.

以上のような保護回路を構成するには、半纏体レーサノ
パッケージ内部に、抵抗ヤ、コンテンサー、あるいはク
ランプダイオード３ｆ：もよいし、あるいは、第２図に
示すように、半導体レーザ１ｆ：結晶成長にょシ製造す
る際に、モノリシックにつくりつける。たとえば、半導
体レーザの電極５の上に、抵抗４（Ｒ＋）を成長させ、
ボンディングワイア９を通じて、ビンＩＣＩに接続する
。一方、抵抗４の上にクランプダイオードとして働＜ｐ
ｎ接合３を成長させ、さらに抵抗６（ｒ）を成長させる
。抵抗６がらは、ボンディングワイアによシアース１１
に接続をせる。To configure the above protection circuit, a resistor, a capacitor, or a clamp diode 3f may be installed inside the semi-integrated laser package, or as shown in FIG. When manufacturing nyoshi, it is made monolithically. For example, a resistor 4 (R+) is grown on the electrode 5 of a semiconductor laser,
Connect to the bin ICI through bonding wire 9. On the other hand, it acts as a clamp diode on the resistor 4 <p
The n-junction 3 is grown, and the resistor 6(r) is further grown. The resistor 6 is connected to the shear 11 by the bonding wire.
Make a connection.

このように、半導体レーザチッグそのものに、モノリシ
ックに保護回路を作製することにより、素子自体の信頼
性が向上し１，取シ扱いも容易になる。In this way, by monolithically fabricating a protection circuit on the semiconductor laser chip itself, the reliability of the element itself is improved and handling becomes easier.

また、抵抗４や６による発熱が問題となる場合には第３
図に示すように構成することができる。In addition, if heat generation by resistors 4 and 6 is a problem, the third
It can be configured as shown in the figure.

すなわち、アース基盤１１の上に、抵抗（ｒ）、クラン
プダイオードとして働（ｐｎ接合３を積層して半導体レ
ーザ１とハイブリッドにつくりっけ、ボンディングワイ
アにより、ビンＩＯＫ直接接続する。一方、ビンｌｏ上
には抵抗４（Ｒｔ）’に設け、ボンディングワイアによ
り、半導体レーザ１の電極５と接続する。That is, on the earth base 11, a resistor (r), which acts as a clamp diode (pn junction 3) is stacked to form a hybrid with the semiconductor laser 1, and the pin IOK is directly connected with the bonding wire. A resistor 4 (Rt)' is provided on the top, and connected to the electrode 5 of the semiconductor laser 1 by a bonding wire.

クランプダイオードとして働＜ｐｎ接合３には例えばゲ
ルマニウムを基盤とし、インジウム、あるいけアンチモ
ンなどの■族、あるいは■族の元素をドープし、それぞ
れｐ型、あるいはｎ型となすことによってｐｎ接合をつ
くることができる。The pn junction 3 is made of germanium, for example, and is doped with a group II or group III element such as indium or antimony to make it p-type or n-type, respectively, to form a pn junction. be able to.

また、抵抗４、あるいは６として、たとえば、ポリシリ
コンを使用することかで＠、１００Ｘ１００×１０μｍ
程度の大きさの抵抗をつく９つけることが可能である。Also, as the resistor 4 or 6, for example, by using polysilicon, it is possible to
It is possible to create a resistance of a certain magnitude.

半導体レーザ１としては、ＧａＡｔＡｓ混晶を用いた、
可視、あるいは赤外光を発掘するＣ３Ｐ（　Ｃｈａｎｎ
ｅｌｅｄ　　５ｕｂｓｔｒａｔｅ　　ｐｌａｎｅｒ　）
型やＢＨ　（１３ｕｒｉｅｄ　　Ｈｅｔｅｒｏ　ｌ型全
使用することができるが、他の型の半導体レーザにも本
発明によるサージ破壊防止回路を適用できることは云う
までもない。The semiconductor laser 1 uses GaAtAs mixed crystal,
C3P (Channel) excavates visible or infrared light
eled 5ubstrate planer)
It goes without saying that the surge destruction prevention circuit according to the present invention can be applied to other types of semiconductor lasers as well, although all types can be used.

さらに、半導体レーザの容ｉＣ　ｌは、ｃ．＝ｏ．ｓｐ
Ｆ” 程度であるから、例えばｃｕｔ　　ｏｆｆ周波数ｆｃ＝
２００ＭＨ２以上のバイパスフィルターを形成するには
抵抗４（Ｒ＋）として Ｒ＋＝１０にΩ 必要となる。この値は、上述のポリシリコンにょシ、１
　００ＸＩ　０ＯＸＩ　Ｏμｍ程度の太きづで作ること
が可能である。数１０Ω程度の低い抵抗を作るにはウェ
ルなどを使用すればよい。Furthermore, the capacity iCl of the semiconductor laser is c. =o. sp
For example, the cut off frequency fc=
To form a bypass filter of 200 MH2 or more, a resistor 4 (R+) of R+=10 is required. This value is equal to the polysilicon layer described above, 1
It is possible to make it with a thickness of about 00XI 0OXI Oμm. A well or the like may be used to create a low resistance of several tens of ohms.

このように、抵抗４の値Ｒ．を選ぶことにより、裡々の
ｃｕｔ　　ｏｆｆ周波数を有するバイパスフィルターを
構成することができる。In this way, the value of resistor 4 R. By selecting , it is possible to construct a bypass filter with a specific cut off frequency.

抵抗６についても同様の構成によりその値ｒを設定でき
る。The value r of the resistor 6 can also be set using a similar configuration.

才だ第４図に示す如く、半導体レーザと並列に容量をつ
く．りつけることもできる。′ｔなゎち、誘電体１２を
アース基盤１１上・に、例えばＣＥプロセスにより形成
することができる。このようにすれば、同一のｃｕｔ　
　ｏｆｆ　周波数に対して、抵抗４の値Ｒ，全小さくす
ることができ、抵抗部分での発熱をおさえることが可能
である。As shown in Figure 4, a capacitor is placed in parallel with the semiconductor laser. You can also attach it. Alternatively, the dielectric 12 can be formed on the ground substrate 11 by, for example, a CE process. In this way, the same cut
The value R of the resistor 4 can be made completely smaller than the off frequency, and it is possible to suppress heat generation in the resistor portion.

〔発明の効果〕〔Effect of the invention〕

以上述べてきたように、本発明によれば、半導シ 体レーザと、保護回路とを、モノリック、あるいへ はハイブリッドに、構成することによシ、サージ破壊に
対し、強じんな特性を有する信頼性の高い半導体レーザ
装置を実現することが可能である。As described above, according to the present invention, by configuring the semiconductor laser and the protection circuit in a monolithic or hybrid manner, strong characteristics against surge damage can be achieved. It is possible to realize a highly reliable semiconductor laser device having the following characteristics.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明による保護回路の構成を示す図、第２図
はこの保護回路をモノリシックに構成した本発明の実施
例を示す図、第３図および第４図はそれぞれハイブリッ
ドに構成した本発明の他の実施例を示す図である。 １・・・半導体レーザ、２・・・半導体レーザ駆動回路
、３・・・クランプダイオード、４・・・抵抗、５・・
・クランプダイオード（ｐ　ｎ接合）、６・・・抵抗、
７・・・半導体レーザの活性層、８・・・電極、９・・
・ワイアボンディング、１０・・・ビン、１１・・・ア
ース、１２・・・誘′亀第　１　図 ％Ｚ［￥］ χ　３　図FIG. 1 is a diagram showing the configuration of a protection circuit according to the present invention, FIG. 2 is a diagram showing an embodiment of the present invention in which the protection circuit is configured monolithically, and FIGS. 3 and 4 are diagrams showing a hybrid configuration of the protection circuit. FIG. 7 is a diagram showing another embodiment of the invention. DESCRIPTION OF SYMBOLS 1... Semiconductor laser, 2... Semiconductor laser drive circuit, 3... Clamp diode, 4... Resistor, 5...
・Clamp diode (p-n junction), 6...resistance,
7... Active layer of semiconductor laser, 8... Electrode, 9...
・Wire bonding, 10...Bin, 11...Earth, 12...Induction Figure 1 %Z [¥] χ 3 Figure

Claims (1)

【特許請求の範囲】 １、　クランプダイオードとこれに並列接続された半導
体レー□ザとからなる回路によって決定される時定数を
、上記クランプダイオードの容量と、内部抵抗によって
決定される時定数にほぼ等しいか、呼たは犬なる如く構
成すると共に、上記半導体レーザに直列接続した抵抗ど
、上記半導体レーザの容量、あるいは、上記半導体レー
ザと並列に接続した容量とにより、・・イパスフイルタ
ーを構成したことを特徴とする半導体レーザサージ破壊
防止回路。 ２、上記クラップダイオード、抵抗及び半導体レーザ全
モノリシックあるいはノ・イブリッドに構成したことを
特徴とする特許請求の範囲第１項記載の半導体レーザサ
ージ破壊防止回路。 ノ[Claims] 1. The time constant determined by a circuit consisting of a clamp diode and a semiconductor laser connected in parallel with the clamp diode is approximately equal to the time constant determined by the capacitance of the clamp diode and the internal resistance. An Ipass filter is constructed by a resistor connected in series with the semiconductor laser, a capacitance of the semiconductor laser, or a capacitance connected in parallel with the semiconductor laser. A semiconductor laser surge destruction prevention circuit characterized by: 2. The semiconductor laser surge damage prevention circuit according to claim 1, wherein the clap diode, the resistor, and the semiconductor laser are all monolithically or hybridly constructed. of
JP5239383A 1983-03-30 1983-03-30 Circuit for preventing surge breakdown of semiconductor laser Pending JPS59178784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5239383A JPS59178784A (en) 1983-03-30 1983-03-30 Circuit for preventing surge breakdown of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5239383A JPS59178784A (en) 1983-03-30 1983-03-30 Circuit for preventing surge breakdown of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS59178784A true JPS59178784A (en) 1984-10-11

Family

ID=12913554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5239383A Pending JPS59178784A (en) 1983-03-30 1983-03-30 Circuit for preventing surge breakdown of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS59178784A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005353647A (en) * 2004-06-08 2005-12-22 Fuji Xerox Co Ltd Vertical cavity surface emitting laser diode
JP2007129011A (en) * 2005-11-02 2007-05-24 Seiko Epson Corp Optical semiconductor element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005353647A (en) * 2004-06-08 2005-12-22 Fuji Xerox Co Ltd Vertical cavity surface emitting laser diode
US7995636B2 (en) 2004-06-08 2011-08-09 Fuji Xerox Co., Ltd. Semiconductor laser apparatus and manufacturing method thereof
JP2007129011A (en) * 2005-11-02 2007-05-24 Seiko Epson Corp Optical semiconductor element

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