JPS59178729A - フォトレジストプロセスにおける露光方法 - Google Patents
フォトレジストプロセスにおける露光方法Info
- Publication number
- JPS59178729A JPS59178729A JP58052631A JP5263183A JPS59178729A JP S59178729 A JPS59178729 A JP S59178729A JP 58052631 A JP58052631 A JP 58052631A JP 5263183 A JP5263183 A JP 5263183A JP S59178729 A JPS59178729 A JP S59178729A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- wafer
- resist film
- film thickness
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58052631A JPS59178729A (ja) | 1983-03-30 | 1983-03-30 | フォトレジストプロセスにおける露光方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58052631A JPS59178729A (ja) | 1983-03-30 | 1983-03-30 | フォトレジストプロセスにおける露光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59178729A true JPS59178729A (ja) | 1984-10-11 |
JPH0423816B2 JPH0423816B2 (enrdf_load_stackoverflow) | 1992-04-23 |
Family
ID=12920164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58052631A Granted JPS59178729A (ja) | 1983-03-30 | 1983-03-30 | フォトレジストプロセスにおける露光方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59178729A (enrdf_load_stackoverflow) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62263646A (ja) * | 1986-05-12 | 1987-11-16 | Toshiba Corp | ウエハ検査装置 |
JPH01220332A (ja) * | 1988-02-26 | 1989-09-04 | Toshiba Corp | カラー受像管用シャドウマスクの製造方法 |
JPH07183188A (ja) * | 1993-12-22 | 1995-07-21 | Nikon Corp | 走査型露光装置 |
EP0738925A3 (en) * | 1995-04-21 | 1997-04-23 | Samsung Electronics Co Ltd | Mask for setting the line width of a photoresist pattern |
US5747201A (en) * | 1990-04-13 | 1998-05-05 | Hitachi, Ltd. | Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method |
JP2021006825A (ja) * | 2012-09-28 | 2021-01-21 | ヴィブラント ホールディングス リミテッド ライアビリティ カンパニー | 生体分子解析のための方法、システム、およびアレイ |
US11565231B2 (en) | 2012-02-07 | 2023-01-31 | Vibrant Holdings, Llc | Substrates, peptide arrays, and methods |
US11674956B2 (en) | 2012-09-28 | 2023-06-13 | Vibrant Holdings, Llc | Methods, systems, and arrays for biomolecular analysis |
US12251674B2 (en) | 2012-11-14 | 2025-03-18 | Vibrant Holdings, Llc | Substrates, systems, and methods for array synthesis and biomolecular analysis |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5851514A (ja) * | 1981-09-22 | 1983-03-26 | Toshiba Corp | ウエハ露光方法及びその装置 |
-
1983
- 1983-03-30 JP JP58052631A patent/JPS59178729A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5851514A (ja) * | 1981-09-22 | 1983-03-26 | Toshiba Corp | ウエハ露光方法及びその装置 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62263646A (ja) * | 1986-05-12 | 1987-11-16 | Toshiba Corp | ウエハ検査装置 |
JPH01220332A (ja) * | 1988-02-26 | 1989-09-04 | Toshiba Corp | カラー受像管用シャドウマスクの製造方法 |
US5747201A (en) * | 1990-04-13 | 1998-05-05 | Hitachi, Ltd. | Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method |
JPH07183188A (ja) * | 1993-12-22 | 1995-07-21 | Nikon Corp | 走査型露光装置 |
EP0738925A3 (en) * | 1995-04-21 | 1997-04-23 | Samsung Electronics Co Ltd | Mask for setting the line width of a photoresist pattern |
US11565231B2 (en) | 2012-02-07 | 2023-01-31 | Vibrant Holdings, Llc | Substrates, peptide arrays, and methods |
JP2021006825A (ja) * | 2012-09-28 | 2021-01-21 | ヴィブラント ホールディングス リミテッド ライアビリティ カンパニー | 生体分子解析のための方法、システム、およびアレイ |
US11674956B2 (en) | 2012-09-28 | 2023-06-13 | Vibrant Holdings, Llc | Methods, systems, and arrays for biomolecular analysis |
US11815512B2 (en) | 2012-09-28 | 2023-11-14 | Vibrant Holdings, Llc | Methods, systems, and arrays for biomolecular analysis |
US12251674B2 (en) | 2012-11-14 | 2025-03-18 | Vibrant Holdings, Llc | Substrates, systems, and methods for array synthesis and biomolecular analysis |
Also Published As
Publication number | Publication date |
---|---|
JPH0423816B2 (enrdf_load_stackoverflow) | 1992-04-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5885735A (en) | Mask having a phase shifter and method of manufacturing same | |
US7396621B2 (en) | Exposure control method and method of manufacturing a semiconductor device | |
KR102760929B1 (ko) | 반도체 소자 제조 방법 | |
KR101400654B1 (ko) | 기판 처리 방법, 컴퓨터 판독 가능한 저장 매체, 및 기판 처리 시스템 | |
US7759136B2 (en) | Critical dimension (CD) control by spectrum metrology | |
US6866976B2 (en) | Monitoring method, exposure method, a manufacturing method for a semiconductor device, including an etching method and exposure processing unit | |
WO2007013540A1 (ja) | マスクブランクの製造方法及び露光用マスクの製造方法 | |
JP2005026362A (ja) | 加熱処理装置の温度校正方法、現像処理装置の調整方法、及び半導体装置の製造方法 | |
US5916717A (en) | Process utilizing relationship between reflectivity and resist thickness for inhibition of side effect caused by halftone phase shift masks | |
US7238454B2 (en) | Method and apparatus for producing a photomask blank, and apparatus for removing an unnecessary portion of a film | |
US20090170024A1 (en) | Method of Patterning a Substrate, Photosensitive Layer Stack and System for Lithography | |
JPS59178729A (ja) | フォトレジストプロセスにおける露光方法 | |
US7785755B2 (en) | Exposure system, exposure method, and method for manufacturing semiconductor device | |
US7710583B2 (en) | Surface position measuring system, exposure method and semiconductor device manufacturing method | |
KR900001665B1 (ko) | 레지스트 도포방법 | |
KR100551149B1 (ko) | 레지스트 감도의 평가 방법 및 레지스트의 제조 방법 | |
US12224214B2 (en) | Method of fabricating a semiconductor device | |
JPH10254122A (ja) | 露光用フォトマスク | |
JPS60177623A (ja) | 露光装置 | |
US7476473B2 (en) | Process control method, a method for forming monitor marks, a mask for process control, and a semiconductor device manufacturing method | |
KR100781099B1 (ko) | 리소그래피 시스템의 평가방법, 기판처리장치의 조정방법,리소그래피 시스템, 및 노광장치 | |
JPH0620913A (ja) | 露光方法及び装置 | |
JPH09293764A (ja) | 半導体素子の工程欠陥検査方法 | |
JP2796404B2 (ja) | 露光方法及びその装置並びにそれを用いた薄膜生産制御方法及びその装置 | |
JPS62132318A (ja) | 露光装置 |