JPS59178729A - フォトレジストプロセスにおける露光方法 - Google Patents

フォトレジストプロセスにおける露光方法

Info

Publication number
JPS59178729A
JPS59178729A JP58052631A JP5263183A JPS59178729A JP S59178729 A JPS59178729 A JP S59178729A JP 58052631 A JP58052631 A JP 58052631A JP 5263183 A JP5263183 A JP 5263183A JP S59178729 A JPS59178729 A JP S59178729A
Authority
JP
Japan
Prior art keywords
resist
wafer
resist film
film thickness
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58052631A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0423816B2 (enrdf_load_stackoverflow
Inventor
Tetsuo Ito
伊藤 鉄男
Masaya Tanuma
田沼 正也
Yasuo Morooka
泰男 諸岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58052631A priority Critical patent/JPS59178729A/ja
Publication of JPS59178729A publication Critical patent/JPS59178729A/ja
Publication of JPH0423816B2 publication Critical patent/JPH0423816B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP58052631A 1983-03-30 1983-03-30 フォトレジストプロセスにおける露光方法 Granted JPS59178729A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58052631A JPS59178729A (ja) 1983-03-30 1983-03-30 フォトレジストプロセスにおける露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58052631A JPS59178729A (ja) 1983-03-30 1983-03-30 フォトレジストプロセスにおける露光方法

Publications (2)

Publication Number Publication Date
JPS59178729A true JPS59178729A (ja) 1984-10-11
JPH0423816B2 JPH0423816B2 (enrdf_load_stackoverflow) 1992-04-23

Family

ID=12920164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58052631A Granted JPS59178729A (ja) 1983-03-30 1983-03-30 フォトレジストプロセスにおける露光方法

Country Status (1)

Country Link
JP (1) JPS59178729A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62263646A (ja) * 1986-05-12 1987-11-16 Toshiba Corp ウエハ検査装置
JPH01220332A (ja) * 1988-02-26 1989-09-04 Toshiba Corp カラー受像管用シャドウマスクの製造方法
JPH07183188A (ja) * 1993-12-22 1995-07-21 Nikon Corp 走査型露光装置
EP0738925A3 (en) * 1995-04-21 1997-04-23 Samsung Electronics Co Ltd Mask for setting the line width of a photoresist pattern
US5747201A (en) * 1990-04-13 1998-05-05 Hitachi, Ltd. Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method
JP2021006825A (ja) * 2012-09-28 2021-01-21 ヴィブラント ホールディングス リミテッド ライアビリティ カンパニー 生体分子解析のための方法、システム、およびアレイ
US11565231B2 (en) 2012-02-07 2023-01-31 Vibrant Holdings, Llc Substrates, peptide arrays, and methods
US11674956B2 (en) 2012-09-28 2023-06-13 Vibrant Holdings, Llc Methods, systems, and arrays for biomolecular analysis
US12251674B2 (en) 2012-11-14 2025-03-18 Vibrant Holdings, Llc Substrates, systems, and methods for array synthesis and biomolecular analysis

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851514A (ja) * 1981-09-22 1983-03-26 Toshiba Corp ウエハ露光方法及びその装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851514A (ja) * 1981-09-22 1983-03-26 Toshiba Corp ウエハ露光方法及びその装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62263646A (ja) * 1986-05-12 1987-11-16 Toshiba Corp ウエハ検査装置
JPH01220332A (ja) * 1988-02-26 1989-09-04 Toshiba Corp カラー受像管用シャドウマスクの製造方法
US5747201A (en) * 1990-04-13 1998-05-05 Hitachi, Ltd. Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method
JPH07183188A (ja) * 1993-12-22 1995-07-21 Nikon Corp 走査型露光装置
EP0738925A3 (en) * 1995-04-21 1997-04-23 Samsung Electronics Co Ltd Mask for setting the line width of a photoresist pattern
US11565231B2 (en) 2012-02-07 2023-01-31 Vibrant Holdings, Llc Substrates, peptide arrays, and methods
JP2021006825A (ja) * 2012-09-28 2021-01-21 ヴィブラント ホールディングス リミテッド ライアビリティ カンパニー 生体分子解析のための方法、システム、およびアレイ
US11674956B2 (en) 2012-09-28 2023-06-13 Vibrant Holdings, Llc Methods, systems, and arrays for biomolecular analysis
US11815512B2 (en) 2012-09-28 2023-11-14 Vibrant Holdings, Llc Methods, systems, and arrays for biomolecular analysis
US12251674B2 (en) 2012-11-14 2025-03-18 Vibrant Holdings, Llc Substrates, systems, and methods for array synthesis and biomolecular analysis

Also Published As

Publication number Publication date
JPH0423816B2 (enrdf_load_stackoverflow) 1992-04-23

Similar Documents

Publication Publication Date Title
US5885735A (en) Mask having a phase shifter and method of manufacturing same
US7396621B2 (en) Exposure control method and method of manufacturing a semiconductor device
KR102760929B1 (ko) 반도체 소자 제조 방법
KR101400654B1 (ko) 기판 처리 방법, 컴퓨터 판독 가능한 저장 매체, 및 기판 처리 시스템
US7759136B2 (en) Critical dimension (CD) control by spectrum metrology
US6866976B2 (en) Monitoring method, exposure method, a manufacturing method for a semiconductor device, including an etching method and exposure processing unit
WO2007013540A1 (ja) マスクブランクの製造方法及び露光用マスクの製造方法
JP2005026362A (ja) 加熱処理装置の温度校正方法、現像処理装置の調整方法、及び半導体装置の製造方法
US5916717A (en) Process utilizing relationship between reflectivity and resist thickness for inhibition of side effect caused by halftone phase shift masks
US7238454B2 (en) Method and apparatus for producing a photomask blank, and apparatus for removing an unnecessary portion of a film
US20090170024A1 (en) Method of Patterning a Substrate, Photosensitive Layer Stack and System for Lithography
JPS59178729A (ja) フォトレジストプロセスにおける露光方法
US7785755B2 (en) Exposure system, exposure method, and method for manufacturing semiconductor device
US7710583B2 (en) Surface position measuring system, exposure method and semiconductor device manufacturing method
KR900001665B1 (ko) 레지스트 도포방법
KR100551149B1 (ko) 레지스트 감도의 평가 방법 및 레지스트의 제조 방법
US12224214B2 (en) Method of fabricating a semiconductor device
JPH10254122A (ja) 露光用フォトマスク
JPS60177623A (ja) 露光装置
US7476473B2 (en) Process control method, a method for forming monitor marks, a mask for process control, and a semiconductor device manufacturing method
KR100781099B1 (ko) 리소그래피 시스템의 평가방법, 기판처리장치의 조정방법,리소그래피 시스템, 및 노광장치
JPH0620913A (ja) 露光方法及び装置
JPH09293764A (ja) 半導体素子の工程欠陥検査方法
JP2796404B2 (ja) 露光方法及びその装置並びにそれを用いた薄膜生産制御方法及びその装置
JPS62132318A (ja) 露光装置