JPS5917263A - 誘電体分離基板の製造方法 - Google Patents
誘電体分離基板の製造方法Info
- Publication number
- JPS5917263A JPS5917263A JP57126174A JP12617482A JPS5917263A JP S5917263 A JPS5917263 A JP S5917263A JP 57126174 A JP57126174 A JP 57126174A JP 12617482 A JP12617482 A JP 12617482A JP S5917263 A JPS5917263 A JP S5917263A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- substrate
- parts
- high concentration
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10W10/019—
-
- H10W10/10—
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57126174A JPS5917263A (ja) | 1982-07-20 | 1982-07-20 | 誘電体分離基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57126174A JPS5917263A (ja) | 1982-07-20 | 1982-07-20 | 誘電体分離基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5917263A true JPS5917263A (ja) | 1984-01-28 |
| JPS6244853B2 JPS6244853B2 (enExample) | 1987-09-22 |
Family
ID=14928507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57126174A Granted JPS5917263A (ja) | 1982-07-20 | 1982-07-20 | 誘電体分離基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5917263A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62166540A (ja) * | 1986-01-20 | 1987-07-23 | Nec Corp | 誘電体分離型半導体装置及びその製造方法 |
| JPS6436931A (en) * | 1987-07-09 | 1989-02-07 | United Technologies Corp | Bearing support structure strut for gas turbine engine |
| US4923820A (en) * | 1985-09-18 | 1990-05-08 | Harris Corporation | IC which eliminates support bias influence on dielectrically isolated components |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0222956U (enExample) * | 1988-07-30 | 1990-02-15 |
-
1982
- 1982-07-20 JP JP57126174A patent/JPS5917263A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4923820A (en) * | 1985-09-18 | 1990-05-08 | Harris Corporation | IC which eliminates support bias influence on dielectrically isolated components |
| JPS62166540A (ja) * | 1986-01-20 | 1987-07-23 | Nec Corp | 誘電体分離型半導体装置及びその製造方法 |
| JPS6436931A (en) * | 1987-07-09 | 1989-02-07 | United Technologies Corp | Bearing support structure strut for gas turbine engine |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244853B2 (enExample) | 1987-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4897362A (en) | Double epitaxial method of fabricating semiconductor devices on bonded wafers | |
| US4339767A (en) | High performance PNP and NPN transistor structure | |
| JP3372557B2 (ja) | 自己整合型バイポーラトランジスタ製造方法 | |
| US5557134A (en) | Dielectric isolated type semiconductor device | |
| JPS6347963A (ja) | 集積回路とその製造方法 | |
| US4131910A (en) | High voltage semiconductor devices | |
| EP0051534B1 (en) | A method of fabricating a self-aligned integrated circuit structure using differential oxide growth | |
| US3997378A (en) | Method of manufacturing a semiconductor device utilizing monocrystalline-polycrystalline growth | |
| US4026736A (en) | Integrated semiconductor structure with combined dielectric and PN junction isolation including fabrication method therefor | |
| JP3223693B2 (ja) | バイポーラ素子 | |
| US20050035431A1 (en) | Semiconductor device and method for manufacturing semiconductor device | |
| US6445043B1 (en) | Isolated regions in an integrated circuit | |
| JPS5917263A (ja) | 誘電体分離基板の製造方法 | |
| KR910000020B1 (ko) | 반도체장치의 제조방법 | |
| US3974516A (en) | Method of manufacturing a semiconductor device having at least one insulated gate field effect transistor, and semiconductor device manufactured by using the method | |
| US4056414A (en) | Process for producing an improved dielectrically-isolated silicon crystal utilizing adjacent areas of different insulators | |
| US4692784A (en) | Dielectric insulation type semiconductor integrated circuit having low withstand voltage devices and high withstand voltage devices | |
| JP2001196382A (ja) | 半導体装置及びその製造方法 | |
| US4546537A (en) | Method for producing a semiconductor device utilizing V-groove etching and thermal oxidation | |
| JP4056218B2 (ja) | 半導体装置およびその製造方法 | |
| JPH0421343B2 (enExample) | ||
| JPS5846171B2 (ja) | 半導体装置の製造方法 | |
| JP3257523B2 (ja) | 半導体装置の製造方法 | |
| KR940010920B1 (ko) | Soi 구조의 반도체 장치 제조 방법 | |
| JP2000252290A (ja) | 半導体装置とその製造方法 |