JPS59172225A - Manufacture of thin film magnetic material - Google Patents
Manufacture of thin film magnetic materialInfo
- Publication number
- JPS59172225A JPS59172225A JP4630783A JP4630783A JPS59172225A JP S59172225 A JPS59172225 A JP S59172225A JP 4630783 A JP4630783 A JP 4630783A JP 4630783 A JP4630783 A JP 4630783A JP S59172225 A JPS59172225 A JP S59172225A
- Authority
- JP
- Japan
- Prior art keywords
- magnet
- magnetic
- target
- magnetic material
- pole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は薄膜磁性体の作製法、特に軟磁気特性にすぐれ
た磁性合金膜を高いスパンターレートで2、−“
作製することを可能にする方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for producing a thin magnetic film, particularly a method that enables the production of a magnetic alloy film with excellent soft magnetic properties at a high sputter rate. It is related to.
従来例の構成と問題点
従来より高速スパッター法としては第1図(a)に示し
たようなマグネトロンスパッター法が使用されている。Conventional Structure and Problems Conventionally, a magnetron sputtering method as shown in FIG. 1(a) has been used as a high-speed sputtering method.
図において、1は基板、2はターゲット、3d:磁石、
4は非磁性体である。この方法はスパッターレートが高
いという利点を有するものの、磁性を有する厚いターゲ
ットを用いる場合、磁石の磁束が漏れないため、効果を
発揮しない。In the figure, 1 is a substrate, 2 is a target, 3d is a magnet,
4 is a non-magnetic material. Although this method has the advantage of a high sputter rate, it is not effective when using a thick magnetic target because the magnetic flux of the magnet does not leak.
このような場合、第1図(b)に示したようにターゲッ
ト2に細い溝を入れておくことにより磁石の磁束を漏ら
し、スパッターレートを向上させる工夫がなされている
。しかしながら、このような方法は実施をするのが極め
て面倒であり、特にターゲットの加工性が悪い場合には
有効でない。そして、従来、パーマロイや非晶質磁性合
金等はスパッター直後にはさほど軟磁気特性が良くなく
、特性の改良には熱処理を必要としていた。しかし熱に
弱いレジスト膜を設けなければならず、デバイスにこれ
ら軟磁性合金膜を用いる場合には、熱処理による特性改
善が困il+′!l(であるため、十分に膜の特性を生
かすことができ橙いのが実情であった。In such a case, as shown in FIG. 1(b), a narrow groove is formed in the target 2 to leak the magnetic flux of the magnet and improve the sputtering rate. However, such a method is extremely troublesome to implement and is not effective, especially when the target has poor workability. Conventionally, permalloy, amorphous magnetic alloys, etc. did not have very good soft magnetic properties immediately after sputtering, and required heat treatment to improve their properties. However, it is necessary to provide a resist film that is sensitive to heat, and when these soft magnetic alloy films are used in devices, it is difficult to improve the characteristics by heat treatment! 1), the characteristics of the film could be fully utilized, and the actual situation was that the color was orange.
発明の目的
本発明1dこれら二つの問題点を一挙に解決し優れた軟
磁気特性を示す合金膜を高速スパッターすることを可能
にした方法を4是供することを目的とするものである。OBJECTS OF THE INVENTION It is an object of the present invention to provide a method that solves these two problems at once and makes it possible to sputter an alloy film exhibiting excellent soft magnetic properties at high speed.
発明の構成
本発明は、基板ホルダーとターゲットが対向しているス
パッター装置を用いて磁性合金薄膜を作製する際に、基
板ホルダーとターゲットとの間にN極とS極とが一定距
離をへだてて対向するように磁石を置き、その磁束の方
向がターゲットの面内及び基板の面内方向にほぼ平行と
々るようにし、かつスパッター中にこの磁石を回転させ
ることにより、スパンターレートを向上させると同時に
優れた軟磁気特性を有する薄膜磁性体の作製を可能にし
たものである。Structure of the Invention The present invention provides a method for producing a magnetic alloy thin film using a sputtering apparatus in which a substrate holder and a target face each other, with an N pole and a S pole separated by a certain distance between the substrate holder and the target. The sputter rate is improved by placing magnets facing each other so that the direction of the magnetic flux is almost parallel to the in-plane direction of the target and the substrate, and by rotating the magnets during sputtering. At the same time, it has made it possible to produce a thin film magnetic material with excellent soft magnetic properties.
実施例の説明
第2図を用いて本発明の方法の一実施例について述べる
。同図(a)は装置の要部平面図、同(b)は側面断面
図である。DESCRIPTION OF EMBODIMENTS An embodiment of the method of the present invention will be described with reference to FIG. FIG. 4(a) is a plan view of the main part of the device, and FIG. 1(b) is a side sectional view.
図において、11 id二基板、12はN極とS極が相
対向しておかれた磁石、13は磁石12の支持台で、そ
の下に設けられたベアリング14を有する支持台15の
」二を駆動機構16により低速回転できるようになって
いる。17はターゲット、18はターゲット電極である
。磁石12の磁束は同図(b)中に示したように、N極
から出て一部分がターゲット17内に入り、またわずか
ながらスパッターされた基板11上の磁性体内に入りS
極へ向かう。この時、磁石2は駆動機構6により回転す
るので、スパッターされた基板1上の磁性体には回転磁
界が加わり、これにより磁気異方性が磁性体膜面内に誘
導されるのを防ぎ、磁性体の軟磁気特性の向上に寄与す
るようになっている。一方、磁石12が回転することに
より、ターゲット17面は均一にスパッターされるほか
、これより出る磁束により放電の際のプラズマ濃度が上
す、スパッターレートが向−1ニする。力お、ターゲッ
ト17内に磁束が入るのを防ぎ、さらにスパッターレー
トを上層させたい」場合には図中(b)の18の部分に
第1図(a)の磁石3のような磁石を置き、ターゲット
17を磁気的に飽和させてしまえばより効果的である1
、
以下、具体例により本発明の効果を示す。In the figure, 11 is a two-board substrate, 12 is a magnet with N and S poles facing each other, 13 is a support stand for the magnet 12, and a support stand 15 with a bearing 14 provided below. can be rotated at low speed by a drive mechanism 16. 17 is a target, and 18 is a target electrode. As shown in the figure (b), the magnetic flux of the magnet 12 exits from the N pole, a portion of which enters the target 17, and a small amount of which enters the magnetic body on the sputtered substrate 11 and S.
Head towards the pole. At this time, the magnet 2 is rotated by the drive mechanism 6, so a rotating magnetic field is applied to the sputtered magnetic material on the substrate 1, thereby preventing magnetic anisotropy from being induced in the plane of the magnetic material film. This contributes to improving the soft magnetic properties of magnetic materials. On the other hand, as the magnet 12 rotates, the surface of the target 17 is uniformly sputtered, and the magnetic flux emitted from the magnet 12 increases the plasma concentration during discharge and improves the sputtering rate by -1. If you want to prevent magnetic flux from entering the target 17 and further increase the sputtering rate, place a magnet like magnet 3 in Figure 1(a) at part 18 in Figure 1(b). , it is more effective if the target 17 is magnetically saturated1.
, Hereinafter, the effects of the present invention will be illustrated by specific examples.
例1
真空容器内を2 X 10 Torr−4で排気した
後、Arガス圧2 X 1 o−2Torrで、十分水
冷されたガラス基板上にC0B5 Fe2 Nb13な
る組成の非晶質合金を第2図に示したようなスパッター
装置を利用して作製した。この時、比較のため、磁石2
を回転せずに固定した場合、及び磁石2を使用しない場
合の実験もあわせて行なった。1時間スパッターした後
の膜厚及びその100KHzにおける合金膜の初透磁率
l11を測定した。Example 1 After evacuating the inside of a vacuum container at 2 x 10 Torr-4, an amorphous alloy with a composition of C0B5 Fe2 Nb13 was deposited on a sufficiently water-cooled glass substrate at an Ar gas pressure of 2 x 1 o-2 Torr (Fig. 2). It was manufactured using a sputtering device as shown in . At this time, for comparison, magnet 2
Experiments were also conducted in which the magnet 2 was fixed without rotating, and in which the magnet 2 was not used. The film thickness after sputtering for 1 hour and the initial magnetic permeability l11 of the alloy film at 100 KHz were measured.
結果を第1表1/]tとめて示す。The results are shown in Table 1.
6パ−゛
第 1 表
上表に示したように本発明の方法ではスパッターレート
の大幅な向上と、作製直後においても高い透磁率が得ら
れることがわかった。一方、磁石を固定した場合もスパ
ッターレートは向上するものの、多少膜厚分布が悪くな
るほか、得られた合金膜面内に容易軸と困値軸方向が生
じ、容易軸方向のμiが著しく低くなるという欠点があ
る。As shown in the above table, it was found that the method of the present invention can significantly improve the sputter rate and provide high magnetic permeability even immediately after fabrication. On the other hand, when the magnet is fixed, the sputtering rate improves, but the film thickness distribution deteriorates to some extent, and the easy axis and the difficult axis directions occur in the surface of the obtained alloy film, and the μi in the easy axis direction is extremely low. It has the disadvantage of becoming.
例2
ターゲットにFe−Ni合金(パーマロイ)を用い、約
300’C1c加熱した基板上に例1と同様な方法でパ
ーマロイスパッター膜を形成した。結果を第2表に示す
。Example 2 A permalloy sputter film was formed in the same manner as in Example 1 on a substrate heated to about 300'C1c using a Fe--Ni alloy (permalloy) as a target. The results are shown in Table 2.
第 2 表
又通常市販されている第1図(a)のようなマグネトロ
ン型スパッター装置を用いて実験を行なったところ、上
表の磁石なしの場合と1つたく同様の結果が得られた。Table 2 Also, when experiments were conducted using a magnetron type sputtering apparatus as shown in FIG. 1(a) which is commonly available on the market, the same results as in the case without a magnet as shown in the above table were obtained.
発明の効果
以上の説明から明らかなように、本発明の方法は、従来
困髄であった磁性体の高速スパッターを可能にし、かつ
優れた軟磁性を示す磁性体膜を熱処理なしで得るのに極
めて有効な方法である。Effects of the Invention As is clear from the above explanation, the method of the present invention enables high-speed sputtering of magnetic materials, which has been difficult in the past, and also enables the production of magnetic films exhibiting excellent soft magnetism without heat treatment. This is an extremely effective method.
第1図(a)は従来のマグネトロン型スパッター装置の
概念的な構成を示す側面図、同図(b)は要部側面図、
第2図(a)は本発明の方法の一実施例を実施するため
の装置の要部平面図、同図(b)はその側面断面図であ
る。
11・・・・・・基板、12・・・・・・磁石、13・
・・・・・支持台、14・・・・ベアリング、16・・
・・・・支持台、16・・・・・・駆動機構、17・・
・・・・ターゲット、18・・・・・・ターゲット電極
。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図
(a)
(b)
2 図 (とLンFIG. 1(a) is a side view showing the conceptual configuration of a conventional magnetron type sputtering device, FIG. 1(b) is a side view of the main parts,
FIG. 2(a) is a plan view of a main part of an apparatus for carrying out an embodiment of the method of the present invention, and FIG. 2(b) is a side sectional view thereof. 11...Substrate, 12...Magnet, 13.
...Support stand, 14...Bearing, 16...
...Support stand, 16...Drive mechanism, 17...
...Target, 18...Target electrode. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure (a) (b) 2 Figure (and Ln
Claims (2)
ター装置を用いて磁性合金薄膜を作製する際に、前記基
板ホルダーと前記ターゲットとの間にN極とS極とが一
定距離をへたてて相対向するように磁石を置き、その磁
束の方向がターゲットの面内及び前記基板ホルダーに取
付けられた基板の面内方向にほぼ平行となるようにし、
かつスパッター中に前記磁石を回転させることを特徴と
する薄膜磁性体の作製法。(1) When producing a magnetic alloy thin film using a sputtering device in which a substrate holder and a target face each other, the N and S poles are separated by a certain distance between the substrate holder and the target. Place the magnets so that they face each other so that the direction of the magnetic flux is approximately parallel to the in-plane direction of the target and the in-plane direction of the substrate attached to the substrate holder,
A method for producing a thin film magnetic material, characterized in that the magnet is rotated during sputtering.
請求の範囲第1項記載の薄膜磁性体の作製法。(2) The method for producing a thin film magnetic material according to claim 1, wherein the magnetic alloy film is amorphous.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4630783A JPS59172225A (en) | 1983-03-18 | 1983-03-18 | Manufacture of thin film magnetic material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4630783A JPS59172225A (en) | 1983-03-18 | 1983-03-18 | Manufacture of thin film magnetic material |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59172225A true JPS59172225A (en) | 1984-09-28 |
JPH035643B2 JPH035643B2 (en) | 1991-01-28 |
Family
ID=12743530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4630783A Granted JPS59172225A (en) | 1983-03-18 | 1983-03-18 | Manufacture of thin film magnetic material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59172225A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5403457A (en) * | 1992-08-24 | 1995-04-04 | Matsushita Electric Industrial Co., Ltd. | Method for making soft magnetic film |
WO1998031041A1 (en) * | 1997-01-07 | 1998-07-16 | Gencoa Limited | Vapour deposition coating apparatus |
CN104465017A (en) * | 2014-12-15 | 2015-03-25 | 南京理工大学 | Nd-doped CoZr-base high-frequency soft magnetic film and preparation method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5358489A (en) * | 1976-11-08 | 1978-05-26 | Ise Electronics Corp | Spattering system |
JPS55107773A (en) * | 1979-02-09 | 1980-08-19 | Matsushita Electric Ind Co Ltd | Manufacture of amorphous film |
JPS5778123A (en) * | 1980-11-04 | 1982-05-15 | Hitachi Ltd | Manufacture of anisotropic thin magnetic film |
-
1983
- 1983-03-18 JP JP4630783A patent/JPS59172225A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5358489A (en) * | 1976-11-08 | 1978-05-26 | Ise Electronics Corp | Spattering system |
JPS55107773A (en) * | 1979-02-09 | 1980-08-19 | Matsushita Electric Ind Co Ltd | Manufacture of amorphous film |
JPS5778123A (en) * | 1980-11-04 | 1982-05-15 | Hitachi Ltd | Manufacture of anisotropic thin magnetic film |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5403457A (en) * | 1992-08-24 | 1995-04-04 | Matsushita Electric Industrial Co., Ltd. | Method for making soft magnetic film |
WO1998031041A1 (en) * | 1997-01-07 | 1998-07-16 | Gencoa Limited | Vapour deposition coating apparatus |
US6383565B1 (en) | 1997-01-07 | 2002-05-07 | Gencoa Limited | Vapor deposition coating apparatus |
CN104465017A (en) * | 2014-12-15 | 2015-03-25 | 南京理工大学 | Nd-doped CoZr-base high-frequency soft magnetic film and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
JPH035643B2 (en) | 1991-01-28 |
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