JPH01283372A - Magnetron sputtering device - Google Patents
Magnetron sputtering deviceInfo
- Publication number
- JPH01283372A JPH01283372A JP11399688A JP11399688A JPH01283372A JP H01283372 A JPH01283372 A JP H01283372A JP 11399688 A JP11399688 A JP 11399688A JP 11399688 A JP11399688 A JP 11399688A JP H01283372 A JPH01283372 A JP H01283372A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- magnetic field
- magnetic
- target
- magnet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 15
- 230000005291 magnetic effect Effects 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 abstract description 32
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 abstract description 7
- 230000000903 blocking effect Effects 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 230000005415 magnetization Effects 0.000 description 6
- 230000005292 diamagnetic effect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 229910003271 Ni-Fe Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910018499 Ni—F Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- -1 magnetic electrodes Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
各種の磁性膜等を形成するマグネトロンスパッタリング
装置に関し、
スパッタリング中において基板側へ干渉するターゲット
側のマグネットからの磁界を、超電導材の反磁性を利用
して阻止して、磁気特性の良好な磁性膜を容易に形成す
ることを目的とし、マグネットを内蔵したターゲット支
持体上に配置されたターゲットと薄膜形成用基板を対向
配置し、これらを収容した真空容器内をスパッタガス雰
囲気にした状態で該基板上にターゲット物質を被着形成
する装置構成において、前記薄膜形成用基板の周囲にリ
ング状の超電導部材を設けて、該基板に対する外部から
の漏洩磁界を遮断するように構成する。[Detailed Description of the Invention] [Summary] Regarding magnetron sputtering equipment for forming various magnetic films, etc., the magnetic field from the magnet on the target side, which interferes with the substrate side during sputtering, is used to utilize the diamagnetic property of superconducting material. A vacuum vessel containing a target placed on a target support with a built-in magnet and a thin film forming substrate placed facing each other for the purpose of easily forming a magnetic film with good magnetic properties. In an apparatus configuration in which a target material is deposited and formed on the substrate in a sputtering gas atmosphere inside, a ring-shaped superconducting member is provided around the thin film forming substrate to reduce leakage magnetic fields from the outside to the substrate. Configure to block.
本発明はターゲット側のマグネット等からの発生磁界の
影響を受けずに各種磁性膜等を形成するマグネトロンス
パッタリング装置の改良に関するものである。The present invention relates to an improvement in a magnetron sputtering apparatus that forms various magnetic films without being affected by the magnetic field generated by a magnet on the target side.
マグネトロンスパッタリング装置による成膜は、一般に
用いられているスパッタリング装置等での成ｌＩ％速度
に仕べて高速であり、しかも金属薄膜は勿論のこと磁性
膜や酸化膜、窒化膜、或いは硫化膜等の各種化合物薄膜
を容易に成膜可能としていることから、各種磁性膜、磁
性電極、或いは半導体集積回路素子等の製造分野におい
て広く用いられている。Film formation using magnetron sputtering equipment is faster than the formation rate of commonly used sputtering equipment, and can be used not only for metal thin films but also for magnetic films, oxide films, nitride films, sulfide films, etc. It is widely used in the field of manufacturing various magnetic films, magnetic electrodes, semiconductor integrated circuit elements, etc. because it enables easy formation of various compound thin films.
このようなマグネトロンスパッタリング装置により磁性
膜、或いは磁場中で−・定方向に磁化容易軸を有する磁
性膜を形成する場合、ターゲット側のマグネソ）等から
の磁界の干渉により良好な磁性１１りの形成を困難にし
−Ｃいる。このため、そのようなターゲット側マグネッ
トからの磁界の干渉のない良好な磁性膜を容易に形成し
得る装置構成が必要とされている。When forming a magnetic film or a magnetic film having an axis of easy magnetization in a certain direction in a magnetic field using such a magnetron sputtering device, it is possible to form a good magnetic layer due to the interference of the magnetic field from the magnetron on the target side. -C makes it difficult. Therefore, there is a need for an apparatus configuration that can easily form a good magnetic film without such interference of the magnetic field from the target-side magnet.
従来のマグネトロンスパッタリング装置は第２図に示す
ように真空排気系及びスパッタ用ガス導入管２が付設さ
れた真空容器１のベース体側に、例えばヨークによって
磁気的に結合された円環状マグネットと中心円柱状マグ
ネットとからなる二重構成のマグネット４が内蔵された
水冷式のターケソト支持体３が配置され、その支持体３
上にターゲソｌ−５が取り付けられている。As shown in FIG. 2, a conventional magnetron sputtering apparatus has a base body side of a vacuum chamber 1 equipped with an evacuation system and a sputtering gas introduction pipe 2, and a circular magnet and a center circle that are magnetically coupled by, for example, a yoke. A water-cooled Turke Soto support 3 in which a double-configured magnet 4 consisting of a columnar magnet is disposed is disposed, and the support 3
A target sor l-5 is attached on top.
また該ターゲット５と対向して同容器１のカバ一体側に
、薄膜形成用基板７を支持した基板支持体６が配置され
ている。Further, a substrate support 6 supporting a thin film forming substrate 7 is disposed on the cover-integrated side of the container 1, facing the target 5.
そして前記基板支持体６上に支持された基板７表面に薄
膜を被着さ廿るには、先ず真空排気系により所定の真空
度に排気された真空容器１内をアルゴン（Ａｒ）ガスな
どのスパッタガス雰囲気にした後、ターゲット５と基板
支持体６間に電力供給部８により所定電力を供給する。In order to deposit a thin film on the surface of the substrate 7 supported on the substrate support 6, first, the inside of the vacuum container 1, which is evacuated to a predetermined degree of vacuum by the evacuation system, is filled with argon (Ar) gas or the like. After creating a sputtering gas atmosphere, a predetermined power is supplied between the target 5 and the substrate support 6 by the power supply section 8 .
この電力供給によりプラズマ放電が発生し、該プラズマ
は前記マグネット４よりターゲット５表面上に発生漏出
された円弧状の磁界９によって集束され、密度の高いプ
ラズマとなってそのスパックガスイオンが前記ターゲッ
ト５表面に衝突する。Plasma discharge is generated by this power supply, and the plasma is focused by the arc-shaped magnetic field 9 generated and leaked from the magnet 4 onto the surface of the target 5, and becomes a high-density plasma, and the spuck gas ions are transferred to the target 5. Collision with a surface.
この結果、その表面よりターゲット物質がスパッタされ
て対向する前記基板７の表面に大きな成膜速度で薄膜を
形成している。As a result, the target material is sputtered from the surface to form a thin film on the opposing surface of the substrate 7 at a high deposition rate.
ところで十記したような従来のマグネＩ・ロンスパッタ
リング装置では、第２図に示すようにスパッタリング中
において前記マグネソ）・４よりターゲット５表面」二
に発生漏出する円弧状の磁界９の一部が対向する前記基
板７にも到達し、例えば該基板７上に磁性膜を被着形成
する場合には、その磁界９の干渉ににより形成される磁
性膜が磁化されてしまうという問題があった。By the way, in the conventional Magne-Iron sputtering apparatus as mentioned above, as shown in FIG. The magnetic field 9 also reaches the opposing substrate 7, and when a magnetic film is deposited on the substrate 7, for example, there is a problem in that the magnetic film formed is magnetized due to the interference of the magnetic field 9.
また前記基板７の両側近傍に例えば一定方向に磁界をか
ける磁場イ］与用のマグネット（図示せず）を設ＧＪ、
このマグネノＩ・による磁場中で前記基板７１−に一定
方向に磁化容易軸を有する磁性膜を被着形成する場合、
前記クーケソト５表面上に発生漏出される磁界９の干渉
により形成された磁性膜の前記磁化容易軸の方向がずれ
たり、また乱れて良好な磁性膜が得られないといった欠
点があった。Further, magnets (not shown) for applying a magnetic field in a certain direction are installed near both sides of the substrate 7,
When forming a magnetic film having an axis of easy magnetization in a certain direction on the substrate 71- in the magnetic field generated by Magneno I,
Due to the interference of the magnetic field 9 generated and leaked on the surface of the magnet 5, the direction of the axis of easy magnetization of the formed magnetic film is shifted or disturbed, resulting in a disadvantage that a good magnetic film cannot be obtained.
そこでこのような問題を解決するために、例えばターゲ
ット５と前記基板７との間隔を大きくするとか、また前
記基板７の両側近傍に設けた磁場付与用のマグネットの
磁界を強力にする等の方法による成膜も試みたが、この
ような方法にも自ずと限度があり、前記磁界９の干渉を
完全に排除することが困難であった。Therefore, in order to solve such problems, methods such as increasing the distance between the target 5 and the substrate 7, or increasing the strength of the magnetic field of the magnets provided near both sides of the substrate 7 for applying magnetic fields, etc. An attempt was also made to form a film by using the method, but such a method naturally has its limitations, and it was difficult to completely eliminate the interference of the magnetic field 9.
本発明は上記した従来の問題点に鑑み、スパッタリング
中において基板側へ干渉するターゲット側のマグネット
からの磁界を、超電導材の反磁性を利用して阻止して、
磁気特性の良好な磁性膜を容易に形成し得る新規なマグ
ネトロンスパッタリング装置を提供することを目的とす
るものである。In view of the above-mentioned conventional problems, the present invention utilizes the diamagnetic property of superconducting material to block the magnetic field from the magnet on the target side that interferes with the substrate side during sputtering.
The object of the present invention is to provide a novel magnetron sputtering device that can easily form a magnetic film with good magnetic properties.
本発明は上記した目的を達成するため、マグネットを内
蔵したターゲット支持体上に配置されたターゲツトと薄
膜形成用基板を対向配置し、これらを収容した真空容器
内をスパッタガス雰囲気にした状態で該基板上にターゲ
ット物質を被着形成する装置構成において、前記薄膜形
成用基板の周囲にリング状の超電導部材を設けて、該基
板に対する外部からの漏洩磁界を遮断するように構成す
る。In order to achieve the above-mentioned object, the present invention arranges a target placed on a target support with a built-in magnet and a thin film forming substrate facing each other, and creates a sputtering gas atmosphere in a vacuum container containing them. In an apparatus configuration for depositing and forming a target material on a substrate, a ring-shaped superconducting member is provided around the thin film forming substrate to block leakage magnetic fields from the outside to the substrate.
本発明のマグネトロンスパッタリング装置では、マグネ
ットを内蔵したターゲット支持体上のターゲソＩ−と対
向配置された薄膜形成用基板の周囲にリング状の超電導
部材が設けられているため、該超電導部材を冷却して超
電導状態にして例えば磁性膜を成膜する。或いは同様に
前記リング状の超電導部材で囲まれた中の基板の両側近
傍に磁場付与用マグネットを設け、該超電導部材を冷却
して超電導状態にし、例えば一定方向に磁界をかけた磁
場中で磁性膜を成膜することにより、ターゲット側のマ
グネットから基板側へ波及する発生磁界は、超電導部材
の完全反磁性によりそのリング内に侵入することが阻止
され、該基板側への発生磁界の干渉が解消される。この
結果、前記発生磁界の影響のない磁性膜、或いは一定方
向に磁化容易軸を有する良好な磁性膜が得られる。In the magnetron sputtering apparatus of the present invention, since a ring-shaped superconducting member is provided around the thin film forming substrate that is placed facing the target support I- on the target support with a built-in magnet, the superconducting member is cooled. For example, a magnetic film is formed by making the superconducting state into a superconducting state. Alternatively, similarly, magnets for applying a magnetic field are provided near both sides of the substrate surrounded by the ring-shaped superconducting member, and the superconducting member is cooled to be in a superconducting state, and for example, it becomes magnetic in a magnetic field applied in a certain direction. By forming the film, the generated magnetic field that spreads from the magnet on the target side to the substrate side is prevented from entering the ring due to the complete diamagnetic property of the superconducting member, and the interference of the generated magnetic field on the substrate side is prevented. It will be resolved. As a result, a magnetic film that is not affected by the generated magnetic field or a good magnetic film that has an axis of easy magnetization in a certain direction can be obtained.
以下図面を用いて本発明の実施例について詳細に説明す
る。Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明に係るマグネトロンスパッタリング装置
の一実施例を示す要部断面図であり、第２図と同等部分
には同一符号を付している。FIG. 1 is a sectional view of a main part showing an embodiment of a magnetron sputtering apparatus according to the present invention, and parts equivalent to those in FIG. 2 are given the same reference numerals.
この図による実施例が従来の第２図の例と異なる点は、
基板支持体６上に支持された薄膜形成用基板７の周囲に
対応する真空容器２１のカバ一体２１ａの一部にリング
状の四部２１ｈを設け、この凹部２Ｉｂ内にリング状の
超電導部材、例えば液体窒素（Ｌ−Ｎｚ）による冷却に
より臨界温度が得られるＹ−Ｂａ−Ｃｕ−０系の超電導
コイル２２（超電導リング体を用いてもよい）が配置さ
れている。The difference between the embodiment shown in this figure and the conventional example shown in Fig. 2 is as follows.
A ring-shaped four part 21h is provided in a part of the cover unit 21a of the vacuum container 21 corresponding to the periphery of the thin film forming substrate 7 supported on the substrate support 6, and a ring-shaped superconducting member, e.g. A Y-Ba-Cu-0 based superconducting coil 22 (a superconducting ring body may be used) whose critical temperature is obtained by cooling with liquid nitrogen (L-Nz) is arranged.
このような装置により前記基板支持体６上の薄膜形成用
基板７表面に磁性膜を成膜するに際しては、先ず前記基
板７が例えばＮｉ−Ｆｅ等の磁性ターゲット５側のマグ
ネット４からの磁界９の影響を受けないように真空容器
２１のカバ一体２１ａを上方に開けて離した状態で、該
カバ一体２１ａにおける超電導コイル２２が配置された
リング状の凹部２１ｂ内に例えば液体液体窒素などの冷
媒２４を充填し、該超電導コイル２２を臨界温度以下に
冷却して超電導状態にした後、そのカバ一体２１ａを閉
めて真空容器２１内を所定の真空度に排気し、アルゴン
（Ａｒ）ガスなどのスパッタガス雰囲気にする。When forming a magnetic film on the surface of the thin film forming substrate 7 on the substrate support 6 using such an apparatus, the substrate 7 is first exposed to the magnetic field 9 from the magnet 4 on the side of the magnetic target 5 such as Ni-Fe. With the cover 21a of the vacuum container 21 opened upward and separated so as not to be affected by the 24 and cool the superconducting coil 22 below the critical temperature to bring it into a superconducting state, close the cover 21a, evacuate the inside of the vacuum container 21 to a predetermined degree of vacuum, and fill it with argon (Ar) gas or the like. Create a sputtering gas atmosphere.
その後、前記磁性ターゲット５と基板支持体６間に電力
供給部８より所定電力を供給してプラズマ放電を発生さ
せて、従来と同様にマグネトロンスパンクリングを行う
ことにより、該ターゲット５例のマグネット４から基板
７側へ波及する発生磁界９は、前記超電導状態にある超
電導コイル２２の完全反磁性によりそのコイル２２内へ
の侵入が阻止される。Thereafter, a predetermined power is supplied from the power supply unit 8 between the magnetic target 5 and the substrate support 6 to generate a plasma discharge, and magnetron spanking is performed in the same manner as in the past, thereby magnets 4 of the 5 targets are The generated magnetic field 9 that spreads to the substrate 7 side is prevented from penetrating into the coil 22 due to the complete diamagnetic property of the superconducting coil 22 in the superconducting state.
従って、前記基板７の表面への発生磁界９の影響がなく
、所謂発生磁界９により磁化されることのないＮｉ−Ｆ
ｅ等からなる磁性膜を形成することができる。Therefore, there is no influence of the generated magnetic field 9 on the surface of the substrate 7, and Ni-F is not magnetized by the so-called generated magnetic field 9.
A magnetic film made of e.g.
一方、このような装置における前記超電導コイル２２で
囲まれた中の薄膜形成用基板７の両側近傍に、図示のよ
うに磁場付与用マグネット２３を設けて前述したと同様
に超電導コイル２２を冷却して超電導状態にし、例えば
該基板７の一定方向に磁界をかけた磁場中でＮｉ−Ｆｅ
等からなる磁性膜を成膜する場合においても、前記ター
ゲット５側のマグネット４から基板７側へ波及する発生
磁界９が超電導コイル２２の完全反磁性によって該コイ
ル２２内に侵入することが阻止されることから、前記磁
界９の干渉が解消される。この結果、前記発生磁界９等
の影響がなく、かつ一定方向に磁化容易軸を有する良好
な磁性膜を得ることができる。On the other hand, as shown in the figure, magnetic field imparting magnets 23 are provided near both sides of the thin film forming substrate 7 surrounded by the superconducting coil 22 in such an apparatus, and the superconducting coil 22 is cooled in the same manner as described above. For example, Ni-Fe is made into a superconducting state in a magnetic field applied in a certain direction of the substrate 7.
Even when forming a magnetic film made of a superconducting coil 22, the generated magnetic field 9 that spreads from the magnet 4 on the target 5 side to the substrate 7 side is prevented from penetrating into the superconducting coil 22 due to the complete diamagnetic property of the superconducting coil 22. Therefore, the interference of the magnetic field 9 is eliminated. As a result, it is possible to obtain a good magnetic film that is not affected by the generated magnetic field 9 and the like and has an axis of easy magnetization in a certain direction.
なお、上記した磁場中で磁性膜を成膜する場合、その磁
場、即ち前記磁場付与用マグネット２３より基板７に対
して一定方向に付与する磁界９は、周囲に設けた１１ｊ
記超電導コイル２２の超電導状態で原理的に保存される
が、外部からの磁界は排除される。Note that when forming a magnetic film in the above-described magnetic field, the magnetic field, that is, the magnetic field 9 applied in a certain direction to the substrate 7 from the magnetic field applying magnet 23, is
In principle, the superconducting coil 22 is maintained in a superconducting state, but external magnetic fields are excluded.
また、前記ターゲソｌ−５側のマグネット４が電磁イ１
１で構成されている場合には、超電導コイル２２を冷却
して超電導状態にした後、その電磁石に電流をｉｌｌ電
して磁化し、磁界を発生させるようにしてもよい。Further, the magnet 4 on the target solenoid 1-5 side is connected to the electromagnetic magnet 1.
1, the superconducting coil 22 may be cooled to a superconducting state, and then a current may be applied to the electromagnet to magnetize it and generate a magnetic field.
以」−の説明から明らかなように、本発明に係るマグオ
、トロンスパッタリング装置によれば、基十反に対して
ターゲット側のマグ＊ ｙ Ｉ・などからの発牛硼界を
影響させることなくマグネ１〜ロンスパツタリングが可
能なため、高品質な磁性膜、或いは一定方向に磁化容易
軸を有ず磁性膜等を容易に、かつ効率よく形成すること
が可能となる。As is clear from the explanation below, according to the mago-tron sputtering apparatus according to the present invention, the emitting field from the mag*y I・ etc. on the target side does not affect the base material. Since magnetron sputtering is possible, it is possible to easily and efficiently form a high-quality magnetic film or a magnetic film that does not have an axis of easy magnetization in a certain direction.
従って、磁気記録媒体、或いは磁気ヘッドの電極等の製
造に適用して優れた効果を奏する。Therefore, it can be applied to the manufacture of magnetic recording media or magnetic head electrodes, etc. with excellent effects.
第１図は本発明に係るマグネトロンスパッタリング装置
の一実施例を示す要部断面図、第２図は従来のマグネト
ロンスパッタリング装置を説明するための要部断面図で
ある。
第１図において、
３ターゲソ１へ支持体、４ばマグネット、５ばクーゲッ
ト、６ば基板支持体、７は薄膜形成用基板、８は電力供
給部、９は磁界、２１は真空容器、２１ａばカバ一体、
２１ｂは四部、２２は超電導コイル、２３ば磁場付与用
マグネット、２４は冷媒をそれぞれ示す。FIG. 1 is a sectional view of a main part showing an embodiment of a magnetron sputtering apparatus according to the present invention, and FIG. 2 is a sectional view of a main part of a conventional magnetron sputtering apparatus. In FIG. 1, 3 supports 1, 4 is a magnet, 5 is a cuget, 6 is a substrate support, 7 is a thin film forming substrate, 8 is a power supply section, 9 is a magnetic field, 21 is a vacuum container, and 21a is a substrate support. One cover,
Reference numeral 21b indicates four parts, 22 indicates a superconducting coil, 23 indicates a magnet for applying a magnetic field, and 24 indicates a refrigerant.
Claims (2)
３）上に配置されたターゲット（５）と薄膜形成用基板
（７）を対向配置し、これらを収容した真空容器（２１
）内をスパッタガス雰囲気にした状態で該基板（７）上
にターゲット物質を被着形成する装置構成において、 上記薄膜形成用基板（７）の周囲にリング状の超電導部
材（２２）を設けて、該基板（７）に対する外部からの
漏洩磁界を遮断することを特徴とするマグネトロンスパ
ッタリング装置。(1) Target support with built-in magnet (4) (
3) The target (5) placed above and the thin film forming substrate (7) are arranged facing each other, and a vacuum container (21) containing them is placed.
), in which a ring-shaped superconducting member (22) is provided around the thin film forming substrate (7); , a magnetron sputtering apparatus characterized in that it blocks leakage magnetic fields from the outside to the substrate (7).
基板（７）との間隙内に、磁場付与用のマグネット（２
３）を設けてなることを特徴とする請求項１に記載のマ
グネトロンスパッタリング装置。(2) A magnet (2) for applying a magnetic field is placed in the gap between the ring-shaped superconducting member (22) and the thin film forming substrate (7).
3) The magnetron sputtering apparatus according to claim 1, further comprising: 3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11399688A JPH01283372A (en) | 1988-05-10 | 1988-05-10 | Magnetron sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11399688A JPH01283372A (en) | 1988-05-10 | 1988-05-10 | Magnetron sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01283372A true JPH01283372A (en) | 1989-11-14 |
Family
ID=14626448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11399688A Pending JPH01283372A (en) | 1988-05-10 | 1988-05-10 | Magnetron sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01283372A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5439574A (en) * | 1992-04-09 | 1995-08-08 | Anelva Corporation | Method for successive formation of thin films |
| JP2007258447A (en) * | 2006-03-23 | 2007-10-04 | Aisin Seiki Co Ltd | Superconducting magnetic field generator, and sputtering film forming apparatus |
| CN105088162A (en) * | 2015-09-02 | 2015-11-25 | 京东方科技集团股份有限公司 | Magnetic control board, magnetic control device and magnetic control sputtering device |
| JP2016516257A (en) * | 2013-02-27 | 2016-06-02 | エコール ポリテクニック | Apparatus for magnetizing laser plasma with a pulsed magnetic field |
-
1988
- 1988-05-10 JP JP11399688A patent/JPH01283372A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5439574A (en) * | 1992-04-09 | 1995-08-08 | Anelva Corporation | Method for successive formation of thin films |
| JP2007258447A (en) * | 2006-03-23 | 2007-10-04 | Aisin Seiki Co Ltd | Superconducting magnetic field generator, and sputtering film forming apparatus |
| JP2016516257A (en) * | 2013-02-27 | 2016-06-02 | エコール ポリテクニック | Apparatus for magnetizing laser plasma with a pulsed magnetic field |
| CN105088162A (en) * | 2015-09-02 | 2015-11-25 | 京东方科技集团股份有限公司 | Magnetic control board, magnetic control device and magnetic control sputtering device |
| CN105088162B (en) * | 2015-09-02 | 2019-03-05 | 京东方科技集团股份有限公司 | A kind of magnetic control plate, magnetic control means and magnetic control sputtering device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6126790A (en) | Method of magnetically orienting thin magnetic films with a multiple-coil electromagnet | |
| US20110220494A1 (en) | Methods and apparatus for magnetron metallization for semiconductor fabrication | |
| KR100486330B1 (en) | Sputtering apparatus, sputtering film forming apparatus, and magnetoresistive head element manufacturing method | |
| JPS6274073A (en) | Sputtering device | |
| JPH01283372A (en) | Magnetron sputtering device | |
| US6106682A (en) | Thin-film processing electromagnet for low-skew magnetic orientation | |
| JPS6151410B2 (en) | ||
| JPS62218562A (en) | Sputtering device | |
| JPS61288067A (en) | Sputtering device | |
| JP3241913B2 (en) | Sputtering equipment | |
| JP4056112B2 (en) | Magnetron sputtering equipment | |
| JP4056132B2 (en) | Magnetron sputtering method and apparatus | |
| JPH0241585B2 (en) | ||
| JPH0361367A (en) | Magnetron sputtering device | |
| JPH0222468A (en) | Magnetron sputtering device | |
| JP2002004044A (en) | Sputtering system | |
| JPH01275756A (en) | Magnetron sputtering device | |
| JPS5813622B2 (en) | Magnetron type sputtering equipment | |
| JP2906163B2 (en) | Sputtering equipment | |
| JPS63192868A (en) | Sputtering device | |
| JPH05179440A (en) | Cathode for magnetron sputtering | |
| JPH02273323A (en) | Sputtering device for ferromagnetic material | |
| JPS6223980A (en) | Target for magnetron sputtering | |
| JPH0445267A (en) | Sputtering system | |
| JPH0313575A (en) | Opposed targets sputtering device |