JPS59171821A - Manufacture of infrared ray detection element - Google Patents
Manufacture of infrared ray detection elementInfo
- Publication number
- JPS59171821A JPS59171821A JP58046646A JP4664683A JPS59171821A JP S59171821 A JPS59171821 A JP S59171821A JP 58046646 A JP58046646 A JP 58046646A JP 4664683 A JP4664683 A JP 4664683A JP S59171821 A JPS59171821 A JP S59171821A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- metal film
- indium
- fused
- sensing element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title description 9
- 238000001514 detection method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 claims abstract 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052738 indium Inorganic materials 0.000 abstract description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052742 iron Inorganic materials 0.000 abstract description 4
- 238000005476 soldering Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract 2
- 230000003028 elevating effect Effects 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- -1 and in a later step Chemical compound 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0215—Compact construction
- G01J5/022—Monolithic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【発明の詳細な説明】 （ａ） 発明の技術分野 本発明は赤外線検知素子の製造方法の改良に関する。[Detailed description of the invention] (a) Technical field of the invention The present invention relates to an improvement in a method for manufacturing an infrared sensing element.
（ｂ） 技術の背景
インジウム−アンチモン（ＩｎＳｂ）等の化合物半導体
はそのエネルギーギャップが狭いため、赤外線検知素子
のような光電変換素子形成材料に用いられている。(b) Background of the Technology Compound semiconductors such as indium-antimony (InSb) have a narrow energy gap and are therefore used as materials for forming photoelectric conversion elements such as infrared sensing elements.
（Ｃ） 従来技術と問題点
このようｆＩｎｓｂの結晶を用いて赤外線検知素子を形
成する従来の製造工程について第１図より第２図までの
斜視図を用いて説明する。第１図に示すようにＩｎＳｂ
の基板ｌをエポキシ樹脂のような接着剤２を用いてす７
アイヤのような絶縁性基板３上に貼や付ける。(C) Prior Art and Problems The conventional manufacturing process for forming an infrared sensing element using such fInsb crystals will be explained using perspective views from FIG. 1 to FIG. 2. As shown in Figure 1, InSb
Use an adhesive such as epoxy resin 2 to attach the board 7.
Paste it on an insulating substrate 3 such as Aiya.
その後該基板を研磨およびエツチングにより所定の厚さ
まで加工して薄層の状態とする。Thereafter, the substrate is processed into a thin layer by polishing and etching to a predetermined thickness.
次いで該基板にホトレジスト膜を塗後、該ホトレジスト
膜を所定形状にホトリソグラフィ法によりパターニング
し該パターニングされたホトレジスト膜をマスクとして
ＩｎＳｂの基板を所定形状にエツチングする。Next, after coating the substrate with a photoresist film, the photoresist film is patterned into a predetermined shape by photolithography, and the InSb substrate is etched into a predetermined shape using the patterned photoresist film as a mask.
その後第２図に示すように該基板の両端部にインジウム
を半田ごてを＃４すで融着し、後の工程で金線を基板に
融着して該基板と良好なオーミックコンタクトを形成す
るためのリードコンタクト部４を形成する。Then, as shown in Figure 2, indium is fused to both ends of the substrate using a #4 soldering iron, and in a later step, gold wire is fused to the substrate to form good ohmic contact with the substrate. A lead contact portion 4 is formed for this purpose.
その後第２図に示すように前記リードコンタクト部４に
金線５を融着して赤外線検知素子を形成している。Thereafter, as shown in FIG. 2, a gold wire 5 is fused to the lead contact portion 4 to form an infrared sensing element.
しかしこのような従来の方法では基板にインジウムを半
田こてを用いて融着する際、インジウムが溶融して基板
上を拡がり所定形状にリードコンタクト部４が形成され
ない不都合を生じる。そのため必然的にリードコンタク
ト部４に挾まれる赤外線受光領域６と該リードコンタク
ト部４との境界面が精確に制御された状態で形成されな
く、したがって形成される赤外線検知素子の感度や分解
能といった特性が悪い検知素子が得られるような不都合
を生じている。However, in this conventional method, when indium is fused to the substrate using a soldering iron, the indium melts and spreads over the substrate, resulting in the inconvenience that the lead contact portion 4 cannot be formed in a predetermined shape. Therefore, the interface between the infrared light receiving region 6 sandwiched between the lead contact parts 4 and the lead contact parts 4 is not formed in an accurately controlled state, and therefore the sensitivity and resolution of the formed infrared sensing elements are affected. This results in the inconvenience of obtaining a sensing element with poor characteristics.
そこで正確な面積を有するリードコンタクト部４を形成
する方法としてスズ（Ｓｎ ）等を基板の両端部に所定
の寸法で蒸着して形成することも試みたが、基板に蒸着
した３ｎ層は基板にＩｎを融着した場合に比較して、基
板内に充分Ｓｎが溶融せず基板との合金Ｎが形成されな
いため、該合金層を介して金線を融着した際基板と金線
間で良好なオーミックコンタクトは形成されなｌ、−Ｉ
。Therefore, an attempt was made to form a lead contact portion 4 having an accurate area by vapor depositing tin (Sn) or the like to a predetermined dimension on both ends of the substrate, but the 3n layer deposited on the substrate was Compared to the case where In is fused, Sn is not sufficiently melted in the substrate and alloy N with the substrate is not formed, so when gold wire is fused through the alloy layer, there is a good bond between the substrate and the gold wire. No ohmic contact is formed l, -I
.
そこで基板内に充分Ｓｎを溶融するために基板を加熱す
ると接着剤が変質し、該基板が絶縁基板より剥離すると
いった問題点も生じる。また金線を用いてＳｎを蒸着し
た層を介してボンディングしようとすると基板が割れた
り欠けたりする欠点が生じる。Therefore, if the substrate is heated to sufficiently melt Sn into the substrate, the adhesive changes in quality, causing the problem that the substrate peels off from the insulating substrate. Furthermore, if bonding is attempted using a gold wire through a layer in which Sn is vapor-deposited, the substrate may be cracked or chipped.
従って基板の所定領域にＩｎを溶融して基板とＩｎの合
金を形成して金線とのリードコンタクト部を形成するの
が最も実用的である。Therefore, it is most practical to melt In in a predetermined region of the substrate to form an alloy of the substrate and In to form a lead contact portion with the gold wire.
（ｄ） 発明の目的
本発明は上述した欠点を除去し、Ｉ ｎを溶融してリー
ドコンタクト部を基板の両端部に形成する際、該リード
コンタクト部の領域が所定の寸法で形成され受光領域に
は液出ばないようにした新規な赤外線検知素子の製造方
法を提供することを目的とするものである。(d) Object of the Invention The present invention eliminates the above-mentioned drawbacks, and when lead contact parts are formed at both ends of a substrate by melting In, the area of the lead contact parts is formed with predetermined dimensions and the light receiving area is The object of the present invention is to provide a novel method for manufacturing an infrared sensing element that prevents liquid from flowing out.
（ｅ） 範囲の構成
かかる目的を達成するための本発明の赤外線検知素子の
製造方法は、絶縁性基板上に化合物半導体基板を仮着し
た後、該基板を薄層化し、次いで該基板の両端部および
その周辺部に金属膜を仮着後、該金属膜と合金化したイ
〉ジウムを介して導線を融着したことを特徴とするもの
である。(e) Structure of scope The method for manufacturing an infrared sensing element of the present invention to achieve the above object is to temporarily attach a compound semiconductor substrate onto an insulating substrate, thin the substrate, and then thin the substrate at both ends. This is characterized in that a metal film is temporarily attached to the area and its surrounding area, and then a conductive wire is fused via iridium alloyed with the metal film.
（ｆ） 発明の実施例
以下図面を用いて本発明の赤外線検知素子の製造方法の
一実施例につき詳細に説明する。第３図は本発明の一実
施例を示す平面図、第４図、第５図は本発明の一実施例
を示す断（２）図である。(f) Embodiment of the Invention An embodiment of the method for manufacturing an infrared sensing element of the present invention will be described in detail below with reference to the drawings. FIG. 3 is a plan view showing one embodiment of the present invention, and FIGS. 4 and 5 are cross-sectional views (2) showing one embodiment of the present invention.
第３図に示すようにす７アイヤの絶縁性基板３上に接着
剤にて貼りつけられ、パターニングされたＩｎＳｂの基
板１上に蒸着マスク（図示せず）を用いて、該基板１の
両端部上およびその周辺に錫（Ｓｎ ）等の金属膜１１
を蒸着によって仮着形成する。As shown in FIG. 3, a vapor deposition mask (not shown) is used on a patterned InSb substrate 1 that is pasted with an adhesive on a seven-layer insulating substrate 3, and both ends of the substrate 1 are A metal film 11 such as tin (Sn) is provided on and around the part.
is temporarily formed by vapor deposition.
その嶺第４図に示すように該金属膜ｌｌ上にインジウム
化を半田ごてを用いて融着する。図で２は前述した接着
剤である。このようにすれば融着されたインジウム匿は
前述の蒸着された５ｎｌｌの金属膜ｌｌ上より位置ずれ
して周辺に拡がらずＩｎとＳｎが合金化される。As shown in FIG. 4, indium oxide is fused onto the metal film 11 using a soldering iron. In the figure, 2 is the adhesive described above. In this way, the fused indium oxide is not displaced from the 5nll metal film 11 deposited above and spread to the periphery, and In and Sn are alloyed.
このようにすればＩｎとＳｎの合金化された金属膜が周
辺部に拡がらず、したがって前述したＩＪ−ドコンタク
ト都４０面積が正確に制御され、り一ドコンタクト陥４
と前述の受光領域６との境界ｌｆｊが判然とし、受光領
域６の寸法が制御されて特性の安定した高信頼度の赤外
線検知素子が得られる。In this way, the metal film alloyed with In and Sn will not spread to the periphery, and therefore the area of the IJ-dot contact 40 described above can be accurately controlled, and the area of the IJ-dot contact 40 described above can be accurately controlled.
The boundary lfj between the light-receiving region 6 and the above-mentioned light-receiving region 6 is clearly defined, the dimensions of the light-receiving region 6 are controlled, and a highly reliable infrared sensing element with stable characteristics can be obtained.
その後第５図に示すように金線１３をＩｎとＳｎ力（合
金化された領域に融着して接続することで４′？、線５
ｚ！：基ｉｔとが良好にオーミックコンタクトサれる。Thereafter, as shown in FIG.
Z! : There is good ohmic contact with the base.
ここで蒸着する金属膜はＳｎに限らず金（ＡＨ）または
インジウム（Ｉｎ ）を用いても良い。The metal film deposited here is not limited to Sn, but may also be gold (AH) or indium (In).
（ｇ） 発明の効果
以上述べたように本発明の赤外線検知素子σ）製造方法
によれば受光領域が始走の寸法に精度良く制御きれ、更
に基板と導線との接続が良効なオーミックコンタクトを
有する高信頼度の赤外線検知素子が形成できる０(g) Effects of the invention As described above, according to the manufacturing method of the infrared sensing element σ) of the present invention, the light receiving area can be precisely controlled to the starting dimension, and furthermore, the connection between the substrate and the conductive wire is an ohmic contact that is effective. A highly reliable infrared sensing element with
第１図および第２図は従来の赤外線検知素子の製造方法
の工程を示す斜視図、第３図は本発明の赤外線検知素子
の製造方法の一実施例の工程を示す平面図、第４図およ
び第５図は該検知素子の工程を示す１Ｏ１ｌｌＪＩＩＡ
である。
図において１はＩｎＳｂの基板、２は接着剤、３はヅフ
ァイヤ基板、４はリードコンタクト部、５は金線、６は
受光領域、１１は８１１の蒸着膜、しは１口を示す。
第１図
第３図
ｔｓ４図1 and 2 are perspective views showing the steps of a conventional method for manufacturing an infrared sensing element, FIG. 3 is a plan view showing steps of an embodiment of the method for manufacturing an infrared sensing element of the present invention, and FIG. 4 and FIG. 5 shows the process of the sensing element.
It is. In the figure, 1 is an InSb substrate, 2 is an adhesive, 3 is a wire substrate, 4 is a lead contact portion, 5 is a gold wire, 6 is a light receiving area, 11 is a vapor deposited film 811, and 1 port. Figure 1 Figure 3 ts4 Figure
Claims (1)
を薄層化し、次いで該基板の両端部およびその周辺部に
金属膜を破着後、該金属膜と合金化したインジウムを介
して導線を融着したことを特徴とする赤外線検知素子の
＠全方法。After a compound semiconductor substrate is deposited on an insulating substrate, the substrate is thinned, and then a metal film is bonded to both ends of the substrate and its periphery. @ Complete method of infrared sensing element characterized by fused conductor wires.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58046646A JPS59171821A (en) | 1983-03-18 | 1983-03-18 | Manufacture of infrared ray detection element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58046646A JPS59171821A (en) | 1983-03-18 | 1983-03-18 | Manufacture of infrared ray detection element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59171821A true JPS59171821A (en) | 1984-09-28 |
Family
ID=12753073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58046646A Pending JPS59171821A (en) | 1983-03-18 | 1983-03-18 | Manufacture of infrared ray detection element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59171821A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5484986A (en) * | 1977-12-19 | 1979-07-06 | Fujitsu Ltd | Production of infrared-rays detector element |
-
1983
- 1983-03-18 JP JP58046646A patent/JPS59171821A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5484986A (en) * | 1977-12-19 | 1979-07-06 | Fujitsu Ltd | Production of infrared-rays detector element |
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