JPS59171136A - Hanger for wafer susceptor - Google Patents
Hanger for wafer susceptorInfo
- Publication number
- JPS59171136A JPS59171136A JP14637083A JP14637083A JPS59171136A JP S59171136 A JPS59171136 A JP S59171136A JP 14637083 A JP14637083 A JP 14637083A JP 14637083 A JP14637083 A JP 14637083A JP S59171136 A JPS59171136 A JP S59171136A
- Authority
- JP
- Japan
- Prior art keywords
- hanger
- hanger part
- stainless steel
- gas
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
Abstract
Description
【発明の詳細な説明】
本発明はハンガの金属部分を反応ガスに触れないように
した不純物拡散装置あるいはＣＶＩ）装置におけろウェ
ーハ・サセプタ用ハンガに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a hanger for a wafer susceptor in an impurity diffusion device (or CVI) device in which the metal portion of the hanger is protected from contact with a reactive gas.
従来半導体装置製造工程の前後の工程において使用する
ＣＶＤ装置のウェーハ拳サセプタ用ハンガ１は第１図に
示すように反応管２内にサセプタ３を入れ、これにウェ
ーハ４を取り付けたものを石英ハンガ部５で吊って、そ
の上をステンレス・ハンガ部６で吊り丁げ、回転１〜反
応管２内に反応ガスを流して、図示しない赤外線ランプ
で加熱しウェーハ４のエピタキシャル反応を行なってい
る。Conventional wafer susceptor hanger 1 of CVD equipment used in the steps before and after the semiconductor device manufacturing process is a quartz hanger in which a susceptor 3 is placed in a reaction tube 2 and a wafer 4 is attached to it, as shown in FIG. The wafer 4 is suspended by a stainless steel hanger 6, and a reaction gas is flowed into the reaction tube 2 from rotation 1 to heating with an infrared lamp (not shown) to perform an epitaxial reaction on the wafer 4.
しかしながら、このような構造のものに拓（・てはステ
ン１／ス・ハンガ部６が露出しており、高温（約１１０
０Ｃ）下で腐食性ガス（例えばｌ−Ｉ Ｃβなど）に触
扛腐食し、ノ・ンガ１の寿命を短くし、かつ腐食による
化合物が遊離［７反応中のウェー・・４に悪影響をおよ
ぼしている。However, in this type of structure, the stainless steel hanger part 6 is exposed, and it is exposed to high temperatures (approximately 110
0C), it corrodes when exposed to corrosive gases (such as l-I Cβ), shortens the life of NO-NGA1, and compounds due to corrosion are liberated [7, which has an adverse effect on the wafer 4 during the reaction. ing.
本発明は以上のような従来の欠点を解消するものであっ
て、その目的とするところは、）・ンガ金属部の腐食を
防ぎ、ノ・ンガの寿命をのばし、かつウェーハ特性の劣
化をさげ得るウェー／・・サセプタ用ハンガを提供する
にある。The present invention solves the above-mentioned conventional drawbacks, and its purpose is to prevent corrosion of metal parts of the wafer, extend the life of the wafer, and reduce deterioration of wafer characteristics. The way to obtain it is to provide a hanger for the susceptor.
以下、添付図面に関連ｌ−で本発明の実施例について説
明する。Embodiments of the invention will now be described with reference to the accompanying drawings.
第２図は本発明のウエーノ為・ザセプタ用ノーンガを施
した装置の部分断面図である。同図におい−Ｃ、ハンガ
１１は反応管１２内に挿入したウェーク・・サセプタ１
３を直接固定しｆ二石英ハンガ部１５とこれに延長して
設けたスアンレス・ハンガ部１６が組合わさったもので
、第３図に示すように、石英ハンガ部１５の上部に中程
に凹部を作り、この部分にステンレス・ハンガ部１６の
下部を挿入できるように１７、第４図に示すように、ス
テンレス拳ハンガ部１６の周面から水力方向に３本の係
合片１６ａを突出さぜ、石英ハンガ部１５を３点で支持
し、さらにステンレス・ハンガ部１６の上部を仕切り１
７を貫いて−に方に突出させている。またステンレス・
ハンガ部１６には軸心にそって非腐食性ガス供給穴１６
ｂをあけて、たとえば水素ガスを石英ハンガ部］５の空
室１８ｆ、５よび仕切り１７との間隙１９針通し２て噴
出できるようにしでいる。FIG. 2 is a partial cross-sectional view of a device provided with a non-gauge for Ueno and Zacepta according to the present invention. In the same figure, the hanger 11 is the wake susceptor 1 inserted into the reaction tube 12.
This is a combination of a quartz hanger part 15 that directly fixes the quartz hanger part 15, and a suanless hanger part 16 that extends therefrom.As shown in FIG. 17, as shown in FIG. 4, three engaging pieces 16a are protruded in the hydraulic direction from the circumferential surface of the stainless steel fist hanger 16 so that the lower part of the stainless steel hanger 16 can be inserted into this part. The quartz hanger part 15 is supported at three points, and the upper part of the stainless steel hanger part 16 is supported by a partition 1.
It runs through 7 and protrudes in the - direction. Also stainless steel
The hanger part 16 has a non-corrosive gas supply hole 16 along the axis.
b is opened so that, for example, hydrogen gas can be ejected through the space 18f of the quartz hanger 5 and the gap 19 between the partition 17 and the needle passage 2.
また仕切り１７とステンレス・ハンガ部１６との接触部
はステンレス・ハンガ部１６が回転が自由にできるよう
にしてあって、反応ガスを含むその他のガスを漏らさな
いようシールしでいる。そして、ステンレス−ハンガ部
１５の上端を図示しない同転軸に一体的に固定し、ウェ
ーハ・サセプタ１：うを吊りＦげると同時に任意方向の
回転を与えられろようにしている。Further, the contact portion between the partition 17 and the stainless steel hanger portion 16 is designed to allow the stainless steel hanger portion 16 to rotate freely, and is sealed to prevent leakage of other gases including the reaction gas. The upper end of the stainless steel hanger part 15 is integrally fixed to a co-rotating shaft (not shown), so that the wafer susceptor 1 can be suspended and rotated in any direction at the same time.
したがって、仕切り１７がら下に存在するステ＞／ Ｉ
、／ス・ハンガ部６の部分の外側は石英ノ・ンガ部１５
で包囲されており、この構造のものを用いてウェーハ１
４のエピタキシャル反応を行うために、図示しない赤外
線ランプでｌ１００Ｃ程度の高温をかげた状態で腐食性
をもった反応ガス（）（Ｃβなど）を反応管１２内に流
しまた場合、ステンレス・ハンガ部６の外側は石英ノ・
ンガ部１５の凹部で覆ワしている上に、ステンレス・ノ
・ンガ部６にあけた非腐食性ガス供給穴１６ｂを通じて
水素ガス（）（２）を間隙１９および空室１８に噴き出
させでいるから、たとえ、反応ガスがこれらのｔ”ｔ＋
ｉに侵入しようとしでも水素ガスの噴出圧力におされで
流れ込めない。Therefore, the station that exists below the partition 17>/I
,/The outside of the hanger part 6 is the quartz hanger part 15.
Using this structure, wafer 1 is surrounded by
In order to carry out the epitaxial reaction in step 4, a corrosive reaction gas (such as Cβ) is heated to a high temperature of about 1100 C using an infrared lamp (not shown) into the reaction tube 12. The outside of 6 is made of quartz.
Hydrogen gas (2) is injected into the gap 19 and the cavity 18 through the non-corrosive gas supply hole 16b drilled in the stainless steel nozzle part 6, which is covered by the concave part of the stainless steel nozzle part 15. Therefore, even if the reactant gas is
Even if they tried to enter the i, they would not be able to flow in due to the pressure of the hydrogen gas ejecting.
なお、前記実施例においては、ステンレス・ノ・ンガ部
１６の下部（保護部）を石英・・ンガ部１５に形成した
凹部に挿入して覆った構造のものを例示したが、第５図
に示すように石英のギャップ２０を石英ハンガ部２５と
は別個につくって、これをステンレス・ハンガ部２６の
上端が突出すイ）ように通し、さらに石英・・ンガ部２
５の肩部な覆うようにして嵌め込ませ、ステンレス・ハ
ンガ部２６にあけた図示しない穴から水素ガス（Ｈ２）
を噴き出させて反応ガスを寄せ付けない構造のものであ
ってもよいことは言うまでもない。In the above embodiment, the lower part (protection part) of the stainless steel part 16 was inserted into the recess formed in the quartz part 15 to cover it. As shown, a quartz gap 20 is made separately from the quartz hanger part 25, and the stainless steel hanger part 26 is passed through the gap 20 so that the upper end of the stainless steel hanger part 26 protrudes.
5, and hydrogen gas (H2) is inserted through a hole (not shown) made in the stainless steel hanger part 26.
It goes without saying that the structure may be such that the reaction gas is kept out by spewing out gas.
以上の説明から明らかなように本発明によれば、ステン
レス・ハンガ部（その他の金属を使用したものも含む）
の主要部（保護部）の外側を石英で覆って、かつ内側か
ら水素ガスなど非腐食性ガスを噴出させて、ステンレス
・ノ・ンガ部に反応ガスが近づいたり触第１ることのな
いように保護しでいるから高温（１１００Ｃ）下におい
てもステンレス・ハンガ部を腐食させろことがない。し
たがって、ウエーハーサセプタノーンガの寿命を長くで
き、さらに腐食によって生じた化合物が遊離して反応中
のウェーハＶこ付きウェー−・の電気的特性を劣化させ
ることもなく、高精度のエピタキシャル反応がで敦る。As is clear from the above description, according to the present invention, stainless steel hangers (including those using other metals)
The outside of the main part (protective part) of the stainless steel is covered with quartz, and non-corrosive gas such as hydrogen gas is ejected from the inside to prevent the reactive gas from approaching or touching the stainless steel part. The stainless steel hanger part will not corrode even under high temperature (1100C). Therefore, the life of the wafer susceptor can be extended, and furthermore, compounds generated by corrosion will not be liberated and deteriorate the electrical characteristics of the wafer with a bonded wafer during the reaction, allowing high-precision epitaxial reactions to be carried out. Atsushi.
第１図は従来のウェーハ・サセプタハンガの説明図、第
２図は本発明のウェーハ・サセプタハンガを施した装置
の部分断面図、第３図は第２図の要部拡大断面図、第４
図は第３図を矢印入方向から見た平面図、第５図は本発
明のウェーハ・リーセプタハ／ガの他の実施例を示す断
面図で、１；）る。
１・・・ウェーハ・サセプタ用ハンガ、２・・・反応、
″α、３・・・サセプタ、４・・・ウェーハ、訃・・石
英ハンガ部、６・・・ステンレス拳ハンガ部、１１・・
・ハンガ、１２・・・反応管、１３・・・ウェーハ・サ
セプタ、１４・・・ウェーハ、Ｊ−５・・石英ハンガ部
、１６・・・ステンレス・ハンガ部、１６ａ・・・係合
片、１６ｂ・・・非腐食性ガス供給穴、１７・・・仕切
り、１８・・・空室、１９・・・間隙、２０・・・ギヤ
ノブ、２５・・・石英ハンガ部、２６・・・ステンレス
會バンカ部。−１
／−−：＼
代理人 弁理士 高 橋 明 夫 （）第 １
図
ｃ／’
入 ／
第 ２ 図
７ノ′
ノ
／４
第 ４ 図
第 ５ 図FIG. 1 is an explanatory diagram of a conventional wafer/susceptor hanger, FIG. 2 is a partial sectional view of an apparatus equipped with the wafer/susceptor hanger of the present invention, FIG. 3 is an enlarged sectional view of the main part of FIG. 2, and FIG.
The figure is a plan view of FIG. 3 viewed from the direction indicated by the arrow, and FIG. 5 is a sectional view showing another embodiment of the wafer receptacle/gather of the present invention. 1... Hanger for wafer susceptor, 2... Reaction,
"α, 3... Susceptor, 4... Wafer, End... Quartz hanger part, 6... Stainless steel fist hanger part, 11...
- Hanger, 12... Reaction tube, 13... Wafer susceptor, 14... Wafer, J-5... Quartz hanger part, 16... Stainless steel hanger part, 16a... Engaging piece, 16b...Non-corrosive gas supply hole, 17...Partition, 18...Vacancy, 19...Gap, 20...Gear knob, 25...Quartz hanger, 26...Stainless steel Bangka club. -1 /--:\ Agent Patent Attorney Akio Takahashi () No. 1
Figure c/' Enter/2nd Figure 7' No/4 Figure 4 Figure 5
Claims (1)
けるウェーハ・サセプタを石英ハンガ部で吊りさらにこ
れを金属ハンガ部で吊り下げ、さらに、上記金属ハンガ
部を非腐食性ガスによって保護するようにしたことを特
徴とするウェーク・・サセプタ用ハンガ。A wafer susceptor in an apparatus for applying corrosive gas for manufacturing semiconductor devices is suspended by a quartz hanger, which is further suspended by a metal hanger, and the metal hanger is further protected by a non-corrosive gas. A hanger for a wake susceptor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14637083A JPS59171136A (en) | 1983-08-12 | 1983-08-12 | Hanger for wafer susceptor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14637083A JPS59171136A (en) | 1983-08-12 | 1983-08-12 | Hanger for wafer susceptor |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9603776A Division JPS5322372A (en) | 1976-08-13 | 1976-08-13 | Hanger for wafer susceptor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59171136A true JPS59171136A (en) | 1984-09-27 |
Family
ID=15406180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14637083A Pending JPS59171136A (en) | 1983-08-12 | 1983-08-12 | Hanger for wafer susceptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59171136A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04280447A (en) * | 1991-03-07 | 1992-10-06 | Sumitomo Electric Ind Ltd | P-type inp substrate and evaluating method therefor |
| JPH04354327A (en) * | 1991-05-31 | 1992-12-08 | Shin Etsu Handotai Co Ltd | Device for epitaxially growing compound semiconductor |
| FR2678956A1 (en) * | 1991-07-12 | 1993-01-15 | Pechiney Recherche | DEVICE AND METHOD FOR DEPOSITING DIAMOND BY DCPV ASSISTED BY MICROWAVE PLASMA. |
| JPH07263362A (en) * | 1994-09-30 | 1995-10-13 | Tokyo Electron Tohoku Ltd | Treating device |
| CN114086157A (en) * | 2021-09-30 | 2022-02-25 | 华灿光电（浙江）有限公司 | Graphite substrate with conical structure |
-
1983
- 1983-08-12 JP JP14637083A patent/JPS59171136A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04280447A (en) * | 1991-03-07 | 1992-10-06 | Sumitomo Electric Ind Ltd | P-type inp substrate and evaluating method therefor |
| JPH04354327A (en) * | 1991-05-31 | 1992-12-08 | Shin Etsu Handotai Co Ltd | Device for epitaxially growing compound semiconductor |
| FR2678956A1 (en) * | 1991-07-12 | 1993-01-15 | Pechiney Recherche | DEVICE AND METHOD FOR DEPOSITING DIAMOND BY DCPV ASSISTED BY MICROWAVE PLASMA. |
| US5360485A (en) * | 1991-07-12 | 1994-11-01 | Pechiney Recherche | Apparatus for diamond deposition by microwave plasma-assisted CVPD |
| JPH07263362A (en) * | 1994-09-30 | 1995-10-13 | Tokyo Electron Tohoku Ltd | Treating device |
| CN114086157A (en) * | 2021-09-30 | 2022-02-25 | 华灿光电（浙江）有限公司 | Graphite substrate with conical structure |
| CN114086157B (en) * | 2021-09-30 | 2023-12-22 | 华灿光电（浙江）有限公司 | Conical structure graphite substrate |
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