JPH02172886A - Semiconductor single crystal pulling up device - Google Patents
Semiconductor single crystal pulling up deviceInfo
- Publication number
- JPH02172886A JPH02172886A JP32623388A JP32623388A JPH02172886A JP H02172886 A JPH02172886 A JP H02172886A JP 32623388 A JP32623388 A JP 32623388A JP 32623388 A JP32623388 A JP 32623388A JP H02172886 A JPH02172886 A JP H02172886A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- carbon
- semiconductor
- semiconductor single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 239000010453 quartz Substances 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は半導体引上げ装置に関し、特にルツボの改良
に関する。DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION This invention relates to semiconductor pulling equipment, and more particularly to improvements in crucibles.
従来の技術
従来半導体引上げ装置におけるルツボは、石英ルツボと
その外側のカーボンルツボから構成される。カーボンル
ツボは、高温で軟化する石英ルツボを保持する。2. Description of the Related Art A crucible in a conventional semiconductor pulling apparatus is composed of a quartz crucible and a carbon crucible outside the quartz crucible. The carbon crucible holds a quartz crucible that softens at high temperatures.
発明が解決しようとする問題点
カーボンルツボは熱伝導度が大きい。このためヒータの
熱を石英ルツボに伝えるのに都合がよい。これは多結晶
シリコン等の半導体を加熱して溶融するために好ましい
特性である。Problems to be Solved by the Invention Carbon crucibles have high thermal conductivity. Therefore, it is convenient for transmitting the heat of the heater to the quartz crucible. This is a desirable characteristic for heating and melting semiconductors such as polycrystalline silicon.
しかし、石英ルツボとカーボンルツボが接触する部分で
は、高温時にカーボンルツボが侵蝕される。このためカ
ーボンルツボの耐用寿命の低下が問題になっていた。ま
たカーボンルツボの侵蝕部からクラックが発生すること
もある。この場合には寿命が著しく低下してしまう。However, at the portion where the quartz crucible and the carbon crucible come into contact, the carbon crucible is eroded at high temperatures. For this reason, a reduction in the useful life of the carbon crucible has become a problem. Cracks may also occur from the eroded portion of the carbon crucible. In this case, the life span will be significantly reduced.
発明の目的
前述の問題点に鑑み本発明は、ルツボを改良し、耐用寿
命の長いルツボを備えた半導体引上げ装置を提供するこ
とを目的としている。OBJECTS OF THE INVENTION In view of the above-mentioned problems, an object of the present invention is to improve a crucible and provide a semiconductor pulling apparatus equipped with a crucible having a long service life.
発明の要旨
前述の目的を達成するためにこの発明は請求項１に記載
の単結晶半導体引上げ装置を要旨としている。SUMMARY OF THE INVENTION In order to achieve the above-mentioned object, the gist of the present invention is a single crystal semiconductor pulling apparatus according to claim 1.
問題点を解決するための手段
本発明の半導体単結晶引上げ装置は、石英ルツボとその
外側に設けたカーボンルツボからなるルツボを備え、回
転自在に吊下げた種結晶を引上げて単結晶半導体を製造
する構成の半導体結晶引上げ装置において、石英ルツボ
とカーボンルツボの間に厚さ０．１〜２０μｍの窒化珪
素層を設けたことを特徴とする。Means for Solving the Problems The semiconductor single crystal pulling apparatus of the present invention is equipped with a crucible consisting of a quartz crucible and a carbon crucible provided outside the crucible, and produces a single crystal semiconductor by pulling up a rotatably suspended seed crystal. This semiconductor crystal pulling apparatus is characterized in that a silicon nitride layer with a thickness of 0.1 to 20 μm is provided between the quartz crucible and the carbon crucible.
窒化珪素層の厚さが０．１μｍ未満の場合には窒化珪素
層を設ける効果が得られない。If the thickness of the silicon nitride layer is less than 0.1 μm, the effect of providing the silicon nitride layer cannot be obtained.
また、好ましくは、１μｍ以上であることが望ましい。Further, it is preferably 1 μm or more.
また２０μｍよりも厚い場合には層が剥離することがあ
る。Further, if the thickness is greater than 20 μm, the layer may peel off.
窒化珪素層は、少なくとも石英ルツボ下部のＲ部付近か
ら底面にかけての外側に設けるのが望ましい。このよう
に限定した理由は石英ルツボ下部Ｒ部が、カーボンルツ
ボによって支えられているためであり、この部分が最も
侵蝕反応に寄与する部分だからである。It is desirable that the silicon nitride layer be provided at least on the outside of the quartz crucible from the vicinity of the R section at the bottom to the bottom surface. The reason for this limitation is that the lower R part of the quartz crucible is supported by the carbon crucible, and this is the part that contributes most to the erosion reaction.
また、窒化珪素層はＣＶＤ法により設けるのが望ましい
。ＣＶＤ法によれば適正な膜厚を石英ルツボ表面にむら
なくコーティングすることが出来るからである。Furthermore, it is desirable that the silicon nitride layer be provided by the CVD method. This is because the CVD method makes it possible to uniformly coat the surface of the quartz crucible with an appropriate film thickness.
さらに、石英ルツボ外面の窒化珪素層を設ける部分の表
面粗さは、平均粗さ（中心線平均粗さ）が３０μｍ以上
であるのが望ましい。Furthermore, the surface roughness of the portion of the outer surface of the quartz crucible on which the silicon nitride layer is provided is desirably such that the average roughness (center line average roughness) is 30 μm or more.
平均粗さが３０μｍ未満の場合には窒化珪素層が剥離し
易くなる傾向があるためである。This is because when the average roughness is less than 30 μm, the silicon nitride layer tends to peel off easily.
なお、カーボンルツボはグラファイトルツボと言うこと
もある。Note that a carbon crucible is also sometimes called a graphite crucible.
作用効果
石英ルツボとカーボンルツボの間に窒化珪素層を設けた
ので、カーボンルツボの侵蝕が抑制される。従ってルツ
ボの耐用寿命が伸びる。Effects Since the silicon nitride layer is provided between the quartz crucible and the carbon crucible, corrosion of the carbon crucible is suppressed. The service life of the crucible is therefore extended.
実 施 例
以下、図面を参照して本発明による半導体単結晶引上げ
装置について説明する。EXAMPLES Hereinafter, a semiconductor single crystal pulling apparatus according to the present invention will be explained with reference to the drawings.
本発明は半導体単結晶引上げ装置のルツボの改良に関す
るもので、他の構成は従来と同様のものを採用できる。The present invention relates to an improvement of a crucible for a semiconductor single crystal pulling apparatus, and other configurations can be the same as conventional ones.
第１図は、半導体単結晶引上げ装置１を示している。半
導体単結晶引上げ装置１は減圧容器１９を有する。減圧
容器１９内にルツボが設けである。FIG. 1 shows an apparatus 1 for pulling a semiconductor single crystal. The semiconductor single crystal pulling apparatus 1 has a reduced pressure container 19. A crucible is provided in the reduced pressure container 19.
ルツボは石英ルツボ１０とその外側に配置したカーボン
ルツボ１２からなる。石英ルツボ１０の外側、つまり石
英ルツボ１０とカーボンルツボ１２の開には、厚さ１０
μｍの窒化珪素層２０が設けである。The crucible consists of a quartz crucible 10 and a carbon crucible 12 placed outside of the quartz crucible 10. The outside of the quartz crucible 10, that is, the opening of the quartz crucible 10 and the carbon crucible 12 has a thickness of 10
A .mu.m silicon nitride layer 20 is provided.
この窒化珪素層はＣＶＤ法（Ｃｈｅｍｉｃｇｌ Ｖａｐ
ｏｒＤ ｅｐｏｓｉｔｉｏｎ Ｍ ｅｊｈｏｄ）によっ
て形成した。This silicon nitride layer is formed using the CVD method (Chemical Vap).
orD eposition M ejhod).
窒化珪素層２０は石英ルツボ１０下部のＲ部のやや上側
から石英ルツボの底面にかけての外側に設けである。窒
化珪素層は石英ルツボ１０とカーボンルツボ１２が接触
する部分全域に設けてもよい。また、石英ルツボ１０の
外面全域に設けてもよい。The silicon nitride layer 20 is provided outside the quartz crucible 10 from slightly above the R section at the bottom to the bottom surface of the quartz crucible. The silicon nitride layer may be provided over the entire area where the quartz crucible 10 and the carbon crucible 12 are in contact. Further, it may be provided over the entire outer surface of the quartz crucible 10.
また、窒化珪素層を設ける石英ルツボ外側の表面粗さは
平均粗さ７０μｍに゛設定した。Further, the surface roughness of the outside of the quartz crucible on which the silicon nitride layer was provided was set to an average roughness of 70 μm.
ルツボは矢印Ｂの方向に回転可能であり、矢印への方向
に上下移動可能である。The crucible is rotatable in the direction of arrow B and can be moved up and down in the direction of the arrow.
ルツボの外側には、ヒータ１４が設けである。ヒータ１
４は例えばグラファイトやＭ。A heater 14 is provided outside the crucible. Heater 1
4 is graphite or M, for example.
で構成する。Consists of.
ヒータ１４のまわりには保温筒１６が設けである。保温
筒１６は例えばＳｉＣ多孔体で構成する。A heat retaining cylinder 16 is provided around the heater 14. The heat retaining cylinder 16 is made of, for example, a porous SiC material.
ルツボの上方には、単結晶の引上げ手段１７が設けであ
る。引上げ手段１７は、半導体種結晶１８′を矢印り方
向に回転させながら、矢印Ｃ方向に引上げる。A single crystal pulling means 17 is provided above the crucible. The pulling means 17 pulls up the semiconductor seed crystal 18' in the direction of arrow C while rotating it in the direction of arrow C.
この半導体引上げ装置１を用いて５ｉ（１００）単結晶
の引上げを繰り返し行った結果、４２回の引上げを良好
に行うことができた。As a result of repeatedly pulling a 5i (100) single crystal using this semiconductor pulling apparatus 1, it was possible to pull it successfully 42 times.
従来のルツボを備えた引上げ装置を用いて同じ条件で５
ｉ（１００）単結晶の引上げを行ったところ、２５回の
引上げでルツボが使用不能になった。5 under the same conditions using a pulling device with a conventional crucible.
When pulling an i(100) single crystal, the crucible became unusable after 25 pulls.
なお、本発明は前述の実施例に限定されない。例えば、
本発明の単結晶引上げ装置にＭＣＺ法を適用することも
できる。Note that the present invention is not limited to the above-described embodiments. for example,
The MCZ method can also be applied to the single crystal pulling apparatus of the present invention.
第１図は本発明による半導体単結晶引上げ装置の実施例
を示す概略断面図、窒化珪素層を強調して示しである。
１・・・・・・・・・・・・半導体単結晶引上げ装置１
０・・・・・・・・・石英ルツボ
１２・・・・・・・・・カーボンルツボ１４・・・・・
・・・・ヒータ
１６・・・・・・・・・保温筒
１７・・・・・・・・・単結晶の引上げ手段１８・・・
・・・・・・シリコン単結晶１８′・・・・・・種結晶
１９・・・・・・・・・減圧容器
２０・・・・・・・・・窒化珪素層FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor single crystal pulling apparatus according to the present invention, with a silicon nitride layer emphasized. 1... Semiconductor single crystal pulling device 1
0......Quartz crucible 12...Carbon crucible 14...
... Heater 16 ... Heat insulation cylinder 17 ... Single crystal pulling means 18 ...
...Silicon single crystal 18'...Seed crystal 19...Reduced pressure vessel 20...Silicon nitride layer
Claims (1)
を引上げて半導体を製造する構成の半導体単結晶引上げ
装置において、石英ルツボとカーボンルツボの間に厚さ
０．１〜２０μｍの窒化珪素層を設けたことを特徴とす
る半導体単結晶引上げ装置。[Scope of Claims] A semiconductor single crystal pulling apparatus comprising a crucible consisting of a quartz crucible and a carbon crucible provided outside the crucible, and configured to manufacture a semiconductor by pulling up a rotatably suspended seed crystal. A semiconductor single crystal pulling device characterized in that a silicon nitride layer with a thickness of 0.1 to 20 μm is provided between crucibles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32623388A JPH02172886A (en) | 1988-12-26 | 1988-12-26 | Semiconductor single crystal pulling up device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32623388A JPH02172886A (en) | 1988-12-26 | 1988-12-26 | Semiconductor single crystal pulling up device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02172886A true JPH02172886A (en) | 1990-07-04 |
Family
ID=18185476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32623388A Pending JPH02172886A (en) | 1988-12-26 | 1988-12-26 | Semiconductor single crystal pulling up device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02172886A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007534590A (en) * | 2004-04-29 | 2007-11-29 | ベスビウス クルーシブル カンパニー | Silicon crystallization crucible |
| CN102127806A (en) * | 2010-10-28 | 2011-07-20 | 杭州先进石英材料有限公司 | Quartz glass crucible and preparation method thereof |
-
1988
- 1988-12-26 JP JP32623388A patent/JPH02172886A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007534590A (en) * | 2004-04-29 | 2007-11-29 | ベスビウス クルーシブル カンパニー | Silicon crystallization crucible |
| CN102127806A (en) * | 2010-10-28 | 2011-07-20 | 杭州先进石英材料有限公司 | Quartz glass crucible and preparation method thereof |
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