JPS59169156A - Package and assembling method of semiconductor device using the same - Google Patents

Package and assembling method of semiconductor device using the same

Info

Publication number
JPS59169156A
JPS59169156A JP4243183A JP4243183A JPS59169156A JP S59169156 A JPS59169156 A JP S59169156A JP 4243183 A JP4243183 A JP 4243183A JP 4243183 A JP4243183 A JP 4243183A JP S59169156 A JPS59169156 A JP S59169156A
Authority
JP
Japan
Prior art keywords
pellet
gold
metal foil
layer
foil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4243183A
Other languages
Japanese (ja)
Inventor
Tamotsu Usami
保 宇佐美
Takayuki Okinaga
隆幸 沖永
Masayuki Shirai
優之 白井
Ken Okuya
謙 奥谷
Kanji Otsuka
寛治 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP4243183A priority Critical patent/JPS59169156A/en
Publication of JPS59169156A publication Critical patent/JPS59169156A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To effectively attach a pellet having high reliability by thermally press-bonding a metal foil on the pellet mounting position on a substrate substantially entirely. CONSTITUTION:A metallized layer 5 (a conductive layer) is composed of a tungsten layer 6, a nickel layer 7 and a gold layer 8 on the upper surface of a package substrate 1. A metal foil 9 made of gold is thermally press-bonded on the layer 5 of the pellet mounting position at the center of the substrate 1, and air gap is not allowed to remain between the back surface of the foil 9 and the upper surface of the gold 8. When a semiconductor pellet 10 is mounted on the foil 9, the back surface of the pellet is not effectively pelletized without air bubbles or incomplete pelletizing region or metal chips, thereby obtaining high reliability.

Description

【発明の詳細な説明】 ［技術分野］ 本発明はパンケージおよびそれを用いた半導体装置の組
立技術、さらには半導体ペレット取付けを確実に行うこ
とのできるパンケージおよびそれを用いた半導体装置の
組立技術に関するものである。[Detailed Description of the Invention] [Technical Field] The present invention relates to a pancage and a technology for assembling a semiconductor device using the same, and more particularly to a pancage that can reliably attach semiconductor pellets and a technology for assembling a semiconductor device using the same. It is something.

［背景技術］ 一般に、セラミック等で作られたパッケージに半導体ペ
レットを取り付ける場合、パンケージ基板のペレット取
付面に形成した金めつきと半導体ペレットのシリコン材
料との金（Ａｕ）−シリコン（Ｓｉ）共晶構造によりペ
レット付けを行っている。[Background Art] In general, when attaching a semiconductor pellet to a package made of ceramic or the like, gold (Au)-silicon (Si) bonding between the gold plating formed on the pellet attachment surface of the pan cage substrate and the silicon material of the semiconductor pellet is common. Pelletization is done depending on the crystal structure.

ところが、このＡｕ−３ｉ共品によるペレット付けを行
う場合、Ａｕめっきが良好に行われていないと、ＡｕＳ
ｉの濡れが悪くなり、ペレット付けの信頼性が低下して
しまう。However, when attaching pellets using this Au-3i product, if the Au plating is not done well, the AuS
The wetting of i becomes poor, and the reliability of pellet attachment decreases.

このような問題を解決するためには、たとえば金箔をペ
レットとＡｕめっき面との間に挾み込むことが考えられ
、その場合には単に金箔をペレソトとＡｕめっき面との
間に介在させるだけではスクラブ時に金箔がペレット取
付位置からずれてしまうので、ＡＵ箔の裏面の少なくと
も一点で金箔をパッケージのＡｕめっき面に固定するこ
とが考えられる。In order to solve this problem, for example, it is possible to insert gold foil between the pellet and the Au-plated surface; in that case, simply interposing the gold foil between the pellet and the Au-plated surface. Since the gold foil is displaced from the pellet attachment position during scrubbing, it is conceivable to fix the gold foil to the Au-plated surface of the package at at least one point on the back side of the AU foil.

しかしながら、このようにＡＵ箔を点で固定する方式で
は、ペレット付は時にペレットの裏面とパッケージのペ
レット取付面との間に気泡が残留し、またペレットの裏
面の周辺部にベレン斗付けされない領域が形成されたり
、あるいはペレ・ノドの周辺にＡｕ＜ずが飛散してペレ
ットの回路形成面上に付着したりすることがあり・うる
。However, with this method of fixing the AU foil at points, air bubbles sometimes remain between the back side of the pellet and the pellet mounting surface of the package, and there are areas around the back side of the pellet that are not attached. may be formed, or Au may be scattered around the pellet nodule and may adhere to the circuit forming surface of the pellet.

その結果、ペレットの裏面とペレット取付面との間に気
泡が残留することにより、実装後の使用時にペレットか
ら発生した熱のパッケージ側への放散性が悪くなる。ま
た、ペレット裏面の周辺部にペレット付けされない領域
が形成される場合にはその領域の界面で歪みが発生し、
ペレットのクランクの原因となる。さらに、ペレットの
周辺に飛散したＡｕ＜ずがペレットの回路形成面に付着
した場合にはショート不良等の原因となってしまう。As a result, air bubbles remain between the back surface of the pellet and the pellet mounting surface, resulting in poor dissipation of heat generated from the pellet to the package side during use after mounting. In addition, if a region is formed on the periphery of the back side of the pellet where the pellet is not attached, distortion will occur at the interface of that region.
Causes pellet cranking. Further, if the Au particles scattered around the pellet adhere to the circuit forming surface of the pellet, it may cause a short circuit or the like.

［発明の目的］ 本発明の目的は、信頼性の高いベレ・ノド付けを確実に
行うことのできるパッケージを提供することにある。[Object of the Invention] An object of the present invention is to provide a package that can reliably perform verging and guttering with high reliability.

本発明の他の目的は、良質のベレ・ノド付けを円滑かつ
確実に行うことのできる半導体装置の組立技術を提供す
ることにある。Another object of the present invention is to provide a semiconductor device assembly technique that can smoothly and reliably perform high-quality bevel and gutter.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

［発明の概要］ 本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.

すなわち、基板上のペレット取付位置に金属箔をほぼ全
面で熱圧着することにより、ペレ・ノド裏面とパッケー
ジのペレット取付面との間に気泡や不完全ペレット付は
領域等が発生すること等を防止し、信頼性の高いペレッ
ト付けを確実に行うことができる。In other words, by thermo-compression bonding almost the entire surface of the metal foil to the pellet mounting position on the board, it is possible to prevent air bubbles or areas with incomplete pellet attachment from occurring between the back surface of the pellet throat and the pellet mounting surface of the package. This makes it possible to ensure highly reliable pellet attachment.

また、パンケージ基板のペレット取付位置に金属箔をほ
ぼ全面で熱圧着した後に、その金属箔上゛にペレット付
けを行うごとにより、良質のペレット付けを円滑かつ確
実に行うことができるものである。In addition, by hot-pressing metal foil over almost the entire surface of the pan cage board at the pellet attachment position and then attaching pellets to the metal foil, high-quality pellets can be attached smoothly and reliably.

［実施例１］ 第１図は本発明によるパッケージの一実施例を示す断面
図である。[Embodiment 1] FIG. 1 is a sectional view showing an embodiment of a package according to the present invention.

この実施例において、パンケージの基板１はたとえばシ
リコン結晶またはベリリウム（Ｂｅ）または窒素（Ｎ）
を少量含む炭化ケイ素（Ｓ　ｉ　Ｃ）焼結体等で作られ
、その内部には配線２が上下方向に形成されている。こ
の配線２の下側には外部端子用のリードピン４がたとえ
ばＩＮ（Ａｕ）等のろう材３により取り付けられている
。In this embodiment, the substrate 1 of the pancage is made of, for example, silicon crystal or beryllium (Be) or nitrogen (N).
It is made of a sintered body of silicon carbide (S i C) containing a small amount of silicon carbide (S i C), and wiring 2 is formed inside thereof in the vertical direction. Lead pins 4 for external terminals are attached to the lower side of the wiring 2 using a brazing material 3 such as IN (Au).

一方、パンケージ基板１の上面には、メタライズ層５　
（導電層）が形成されている。このメタライズ層５は本
実施例では三層構造よりなり、最下層はたとえばタング
ステン（Ｗ）層６、中間層はたとえばニッケル（Ｎｉ）
［７、最上層はたとえば金（Ａｕ）層８で構成されてい
る。On the other hand, a metallized layer 5 is formed on the upper surface of the pan cage substrate 1.
(conductive layer) is formed. This metallized layer 5 has a three-layer structure in this embodiment, with the bottom layer being, for example, a tungsten (W) layer 6, and the middle layer being, for example, a nickel (Ni) layer.
[7. The top layer is composed of, for example, a gold (Au) layer 8.

パッケージ基板１の中央部におけるペレット取付位置の
メタライズ層５の上にはたとえば金（ＡＵ〉からなる金
属箔９が熱圧着により形成されている。この場合の熱圧
着の条件は温度２００〜４５０℃で、圧力１ｋｇ／−〜
５０ｋｇ／ｃ艷が良い。金属箔９は本実施例ではその裏
面の実質的に全面でメタライズ層５の金層８の上に熱圧
着され、金属箔９の裏面と金層８の上面との間に空隙が
残留しないようになっている。この金属箔９の材料とし
ては、金、銀、アルミニウム（ＡＩ）、インジうム（Ｉ
　ｎ）−ガリウム（Ｃ，ａ）合金、金−錫（Ｓｎ）合金
、ガリウム−金合金等の材料を用いることができる。A metal foil 9 made of, for example, gold (AU) is formed by thermocompression bonding on the metallized layer 5 at the pellet mounting position in the center of the package substrate 1.The conditions for thermocompression bonding in this case are a temperature of 200 to 450°C. So, the pressure is 1 kg/-~
50kg/c barge is good. In this embodiment, substantially the entire back surface of the metal foil 9 is bonded by thermocompression onto the gold layer 8 of the metallized layer 5, so that no gap remains between the back surface of the metal foil 9 and the top surface of the gold layer 8. It has become. Materials for this metal foil 9 include gold, silver, aluminum (AI), and indium (I).
Materials such as n)-gallium (C, a) alloy, gold-tin (Sn) alloy, and gallium-gold alloy can be used.

したがって、本実施例のパンケージによれば、金属箔９
がメタライズ層５上にほぼ全面で熱圧着されているので
、この金属箔９上に半導体ペレットを取り付けると、ペ
レットはその裏面に気泡や不完全ペレット付は領域ある
いは金属くず等を生しることなく、確実にペレット付け
され、極めて高い信頼性を得ることができる。Therefore, according to the pan cage of this embodiment, the metal foil 9
is bonded by thermocompression on almost the entire surface of the metallized layer 5, so when a semiconductor pellet is attached to the metal foil 9, air bubbles, incomplete pellet attachment areas, metal scraps, etc. may be generated on the back side of the pellet. The pellets can be attached reliably without any problems, and extremely high reliability can be obtained.

［実施例２］ 第２図は第１図に示すパッケージを用いて組み立てられ
た半導体装置の一実施例を示す断面図である。[Example 2] FIG. 2 is a sectional view showing an example of a semiconductor device assembled using the package shown in FIG. 1.

本実施例における半導体装置を組み立てる場合、ペレッ
ト１０を取り付ける以前に、パッケージ基板１のメタラ
イズ層５のペレット取付位置上には、ペレット１０の面
積よりもやや広い面積を持つ金属箔９が前記の如くその
ほぼ全面で熱圧着されている。When assembling the semiconductor device in this embodiment, before attaching the pellet 10, a metal foil 9 having an area slightly larger than the area of the pellet 10 is placed on the metallized layer 5 of the package substrate 1 at the pellet attaching position as described above. Almost the entire surface is thermocompressed.

したがって、この金属Ｔ３９の上にペレット１０を加熱
とスクラブ運動等で取り付けると、前記の如く信頼性の
良い良質のペレット付けを円滑かつ確実に行うことがで
き−る。たとえば、金属箔９が金箔よりなる場合、この
金材料とペレット１０のシリコン材料との間で良好なＡ
ｕ−３ｉ共晶構造が得られ、メニスカス部１１の形成も
良好かつ容易に行われ、高いペレット付は強度を得るこ
とができる。Therefore, by attaching the pellets 10 onto the metal T39 by heating and scrubbing, it is possible to smoothly and reliably attach the pellets of high quality and reliability as described above. For example, when the metal foil 9 is made of gold foil, a good A
A u-3i eutectic structure is obtained, the meniscus portion 11 is well and easily formed, and high pellet attachment can provide strength.

このようにしてペレット付けを終了した後、ペレット１
０のボンディングパソドはり−ドピン４に電気的に導通
するメタライズ層５とワイヤ１２で相互にボンディング
される。After completing pellet attachment in this way, pellet 1
The metallized layer 5 electrically connected to the bonding pad 4 and the wire 12 are bonded to each other.

次いで、パンケージ基板１０周縁部は低融点ガラスの如
き封止材１３により、たとえばセラミンク材料のキャン
プ１４で気密封止される。Next, the peripheral edge of the pan cage substrate 10 is hermetically sealed with a sealing material 13 such as low melting point glass, for example with a camp 14 of ceramic material.

［効果］ （１）、パンケージの基板のペレット取付位置に金属箔
をそのほぼ全面で熱圧着することにより、ペレット付は
時にペレットの裏面とパッケージの表面との間に気泡や
不完全ペレット付は領域が発生したり、金属（ずのペレ
ット回路面への付着によるショート不良が発生したりす
ることを防止でき、信頼性の高いペレット付けを確実に
行うことができる。[Effects] (1) By thermo-compressing metal foil over almost the entire surface of the pellet mounting position on the board of the pan cage, it is possible to prevent air bubbles between the back side of the pellet and the surface of the package or incomplete pellet mounting. It is possible to prevent short-circuit failures due to the formation of areas and adhesion of metal to the pellet circuit surface, and to ensure highly reliable pellet attachment.

（２）、また、前記（１）により、ペレットからの熱の
パッケージ側への放散性も向上する。(2) Moreover, according to the above (1), the dissipation of heat from the pellet to the package side is also improved.

（３）、金属箔を金箔で構成し、この金箔を基板上の金
めつき面に熱圧着することにより、さらに信頼性の高い
ペレット付けが可能である。(3) By composing the metal foil with gold foil and thermocompression bonding this gold foil to the gold-plated surface of the substrate, even more reliable pellet attachment is possible.

（４）、パッケージ基板上のペレット取付位置に金属箔
をそのほぼ全面で熱圧着した後、その金属箔上にペレッ
トを取り付け、またワイヤボンディング、封止を行うこ
とにより、良質のペレット付けを円滑かつ確実に得るこ
とができる。(4) After hot-pressing metal foil over almost the entire surface of the pellet mounting position on the package substrate, attaching the pellet onto the metal foil, and performing wire bonding and sealing to ensure smooth attachment of high-quality pellets. and can be obtained reliably.

以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明は前記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることばいうまでもない。Although the invention made by the present inventor has been specifically explained above based on examples, it goes without saying that the present invention is not limited to the above-mentioned examples, and can be modified in various ways without departing from the gist thereof. do not have.

たとえば、パッケージ基板への金属箔の熱圧着はできる
だけ完全に行えばより良好であり、またこの熱圧着はペ
レット付けの前に予め実行してもよいが、ペレ・ノド付
は直前に行ってもよい。For example, thermocompression bonding of metal foil to a package substrate is better if it is done as completely as possible, and this thermocompression bonding may be performed in advance before pellet attachment, but pellet/groove attachment may be performed just before. good.

［利用分野］ 以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である気密封止型のパッケ
ージおよびそれを用いた半導体装置に適用した場合につ
いて説明したが、それに限定されるものではなく、たと
えば、他の封止型式のパッケージやそれを用いた半導体
装置の組立技術にも広く適用できる。[Field of Application] In the above explanation, the invention made by the present inventor was mainly applied to the field of application which is the background thereof, which is a hermetically sealed package and a semiconductor device using the same, but the invention is not limited to this. For example, the present invention can be widely applied to other sealing types of packages and techniques for assembling semiconductor devices using the packages.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明によるパンケージの一実施例を示す断面
図、 第２図はそのパンケージを用いて組み立てられた半導体
装置の一実施例を示す断面図である。 １・・・パッケージ基板、２・・・配線、３・・・ろう
材、４・・・リードビン、５自・メタライズ層、６・・
・タングステン層、７・・・−ノケル層、８・・・金層
、９・・・金属箔、１゜・・・ペレット、１１・・・メ
ニスカス部、Ｉ２・・・ワイヤ、１３・・・封止材、１
４・・・キャンプ。 代理人　弁理士　　高　橋　明　夫 第　　１　　図 第　　２　　図 小平市上水本町１４５０番地株式会 社日立製作所デバイス開発セン タ内 ■出　願　人　日立マイクロコンピュータエンジニアリ
ング株式会社 小平市上水本町１４７９番地FIG. 1 is a sectional view showing an embodiment of a pancake according to the present invention, and FIG. 2 is a sectional view showing an embodiment of a semiconductor device assembled using the pancage. DESCRIPTION OF SYMBOLS 1... Package board, 2... Wiring, 3... Brazing material, 4... Lead bin, 5 Self-metalized layer, 6...
- Tungsten layer, 7... - Nokel layer, 8... Gold layer, 9... Metal foil, 1°... Pellet, 11... Meniscus portion, I2... Wire, 13... Sealing material, 1
4...camping. Agent Patent Attorney Akio Takahashi Figure 1 Figure 2 Inside Hitachi Device Development Center, Hitachi, Ltd., 1450 Kamisui Honmachi, Kodaira City Applicant Hitachi Microcomputer Engineering Co., Ltd. 1479 Kamisui Honmachi, Kodaira City

Claims (1)

【特許請求の範囲】 １、基板上のペレット取付位置に金属箔をそのほぼ全面
で熱圧着してなることを特徴とするパッケージ。 ２、金属箔は金箔よりなり、この金箔は基板上の金めつ
き面上に熱圧着されることを特徴とする特許請求の範囲
第１項記載のパッケージ。 ３、パンケージ基板上のベレット取付位置に金属箔をそ
のほぼ全面で熱圧着した後、前記金属箔上にペレットを
取り付け、さらに前記ペレットのポンディングパッドを
外部リードへの導電部とワイヤボンディングし、かつペ
レットを封止することを特徴とする半導体装置の組立方
法。 ４、金属箔がパッケージ基板のベレット取付位置に予め
熱圧着されていることを特徴とする特許請求の範囲第３
項記載の半導体装置の組立方法。[Claims] 1. A package characterized in that a metal foil is thermocompression bonded over almost the entire surface of the substrate at the pellet mounting position. 2. The package according to claim 1, wherein the metal foil is made of gold foil, and the gold foil is thermocompression bonded onto the gold-plated surface of the substrate. 3. After hot-pressing a metal foil almost on the entire surface of the pellet mounting position on the pan cage board, attaching a pellet onto the metal foil, and further wire-bonding the bonding pad of the pellet to the conductive part to the external lead, A method for assembling a semiconductor device, characterized in that the pellet is sealed. 4. Claim 3, characterized in that the metal foil is thermocompressed in advance at the bullet attachment position of the package substrate.
A method for assembling a semiconductor device as described in Section 1.
JP4243183A 1983-03-16 1983-03-16 Package and assembling method of semiconductor device using the same Pending JPS59169156A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4243183A JPS59169156A (en) 1983-03-16 1983-03-16 Package and assembling method of semiconductor device using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4243183A JPS59169156A (en) 1983-03-16 1983-03-16 Package and assembling method of semiconductor device using the same

Publications (1)

Publication Number Publication Date
JPS59169156A true JPS59169156A (en) 1984-09-25

Family

ID=12635874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4243183A Pending JPS59169156A (en) 1983-03-16 1983-03-16 Package and assembling method of semiconductor device using the same

Country Status (1)

Country Link
JP (1) JPS59169156A (en)

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