JPS59163886A - 結合空胴レ−ザ - Google Patents

結合空胴レ−ザ

Info

Publication number
JPS59163886A
JPS59163886A JP59034140A JP3414084A JPS59163886A JP S59163886 A JPS59163886 A JP S59163886A JP 59034140 A JP59034140 A JP 59034140A JP 3414084 A JP3414084 A JP 3414084A JP S59163886 A JPS59163886 A JP S59163886A
Authority
JP
Japan
Prior art keywords
laser
cavity
short
length
microns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59034140A
Other languages
English (en)
Japanese (ja)
Inventor
チヤ−ルズ・アンドリユ−・バ−ラス・ジユニヤ
チンロン・リン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
American Telephone and Telegraph Co Inc
AT&T Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc, AT&T Inc filed Critical American Telephone and Telegraph Co Inc
Publication of JPS59163886A publication Critical patent/JPS59163886A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/082—Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP59034140A 1983-02-25 1984-02-24 結合空胴レ−ザ Pending JPS59163886A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US469813 1983-02-25
US06/469,813 US4528670A (en) 1983-02-25 1983-02-25 Short coupled cavity laser

Publications (1)

Publication Number Publication Date
JPS59163886A true JPS59163886A (ja) 1984-09-14

Family

ID=23865151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59034140A Pending JPS59163886A (ja) 1983-02-25 1984-02-24 結合空胴レ−ザ

Country Status (6)

Country Link
US (1) US4528670A (OSRAM)
JP (1) JPS59163886A (OSRAM)
DE (1) DE3406838A1 (OSRAM)
FR (1) FR2541830B1 (OSRAM)
GB (1) GB2135823B (OSRAM)
NL (1) NL8400585A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005031930A1 (ja) * 2003-09-26 2005-04-07 The Furukawa Electric Co., Ltd. 半導体レーザ装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4583226A (en) * 1983-07-28 1986-04-15 At&T Bell Laboratories Coupled cavity injection laser
US4747107A (en) * 1985-09-06 1988-05-24 Bell Communications Research, Inc. Single mode injection laser
US4817109A (en) * 1985-12-10 1989-03-28 501 Sharp Kabushiki Kaisha External resonator type semiconductor laser apparatus
US4839308A (en) * 1986-07-21 1989-06-13 Gte Laboratories Incorporated Method of making an external-coupled-cavity diode laser
US4726030A (en) * 1986-07-21 1988-02-16 Gte Laboratories Incorporated External-coupled-cavity diode laser
JPH1116188A (ja) * 1997-06-26 1999-01-22 Victor Co Of Japan Ltd 半導体レーザ及び光ピックアップ
US5993999A (en) * 1998-05-15 1999-11-30 Aer Energy Resources, Inc. Multi-layer current collector
DE19822616A1 (de) 1998-05-20 1999-11-25 Sel Alcatel Ag Lichtquelle sowie Verfahren für die Übertragung von spektralkodierten Daten
US8908481B1 (en) * 2014-01-27 2014-12-09 HGST Netherlands B.V. Thermally-assisted magnetic recording head that suppresses effects of mode hopping

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595389A (en) * 1979-01-16 1980-07-19 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303431A (en) * 1964-02-10 1967-02-07 Ibm Coupled semiconductor injection laser devices
US4079339A (en) * 1975-05-17 1978-03-14 Nippon Electric Company, Ltd. Light self-injecting semiconductor laser device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595389A (en) * 1979-01-16 1980-07-19 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005031930A1 (ja) * 2003-09-26 2005-04-07 The Furukawa Electric Co., Ltd. 半導体レーザ装置
US7653317B2 (en) 2003-09-26 2010-01-26 The Furukawa Electric Co., Ltd. Semiconductor laser device

Also Published As

Publication number Publication date
GB2135823B (en) 1986-07-02
NL8400585A (nl) 1984-09-17
GB8404436D0 (en) 1984-03-28
US4528670A (en) 1985-07-09
DE3406838A1 (de) 1984-08-30
FR2541830A1 (fr) 1984-08-31
DE3406838C2 (OSRAM) 1990-06-13
GB2135823A (en) 1984-09-05
FR2541830B1 (fr) 1987-11-27

Similar Documents

Publication Publication Date Title
US6091755A (en) Optically amplifying semiconductor diodes with curved waveguides for external cavities
US4847857A (en) Single wavelength semiconductor laser
JPH0213942B2 (OSRAM)
JPH0449793B2 (OSRAM)
US7760782B2 (en) Distributed bragg reflector type directly modulated laser and distributed feed back type directly modulated laser
EP0125608A2 (en) Single longitudinal mode semiconductor laser
JP2001156392A (ja) 低温動作用の半導体レーザの製造方法
JPH11214793A (ja) 分布帰還型半導体レーザ
JP4905854B2 (ja) 直接変調波長可変レーザ
US4675873A (en) Single mode injection laser structure
US6526087B1 (en) Distributed feedback semiconductor laser
US4528670A (en) Short coupled cavity laser
EP0280581B1 (en) An external cavity type semiconductor laser apparatus
US4639922A (en) Single mode injection laser structure
JP2950302B2 (ja) 半導体レーザ
KR100456670B1 (ko) 광 모드 크기 변환기와 분포 궤환형 레이저 다이오드가일체화된 분포 반사형 레이저 다이오드
US4726030A (en) External-coupled-cavity diode laser
JP7524973B2 (ja) 光デバイス
WO2021148120A1 (en) Single-mode dfb laser
JP7655404B2 (ja) 半導体レーザ
JP2002064245A (ja) 半導体レーザとこれを用いたデジタル光通信システムと方法
JPH03268379A (ja) 半導体レーザ・チップおよびその製造方法
JP7294453B2 (ja) 直接変調レーザ
US4747107A (en) Single mode injection laser
US6771681B2 (en) Distributed feedback semiconductor laser