JPS59163868A - 自己整合型薄膜トランジスタの製造方法 - Google Patents

自己整合型薄膜トランジスタの製造方法

Info

Publication number
JPS59163868A
JPS59163868A JP58036590A JP3659083A JPS59163868A JP S59163868 A JPS59163868 A JP S59163868A JP 58036590 A JP58036590 A JP 58036590A JP 3659083 A JP3659083 A JP 3659083A JP S59163868 A JPS59163868 A JP S59163868A
Authority
JP
Japan
Prior art keywords
gate
semiconductor layer
amorphous semiconductor
electrode
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58036590A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0470773B2 (enrdf_load_stackoverflow
Inventor
Satoru Kawai
悟 川井
Toshiro Kodama
敏郎 児玉
Yasuhiro Nasu
安宏 那須
Nobuyoshi Takagi
高城　信義
Shintaro Yanagisawa
柳沢　真太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58036590A priority Critical patent/JPS59163868A/ja
Publication of JPS59163868A publication Critical patent/JPS59163868A/ja
Publication of JPH0470773B2 publication Critical patent/JPH0470773B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP58036590A 1983-03-08 1983-03-08 自己整合型薄膜トランジスタの製造方法 Granted JPS59163868A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58036590A JPS59163868A (ja) 1983-03-08 1983-03-08 自己整合型薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58036590A JPS59163868A (ja) 1983-03-08 1983-03-08 自己整合型薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59163868A true JPS59163868A (ja) 1984-09-14
JPH0470773B2 JPH0470773B2 (enrdf_load_stackoverflow) 1992-11-11

Family

ID=12473988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58036590A Granted JPS59163868A (ja) 1983-03-08 1983-03-08 自己整合型薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59163868A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6439065A (en) * 1987-08-04 1989-02-09 Nec Corp Thin film field-effect transistor
JPH01155663A (ja) * 1987-12-14 1989-06-19 Hitachi Ltd 非晶質シリコン薄膜トランジスタ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6439065A (en) * 1987-08-04 1989-02-09 Nec Corp Thin film field-effect transistor
JPH01155663A (ja) * 1987-12-14 1989-06-19 Hitachi Ltd 非晶質シリコン薄膜トランジスタ

Also Published As

Publication number Publication date
JPH0470773B2 (enrdf_load_stackoverflow) 1992-11-11

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