JPS59162014A - セラミツクス製切断用受台 - Google Patents

Info

Publication number

JPS59162014A

JPS59162014A JP58036352A JP3635283A JPS59162014A JP S59162014 A JPS59162014 A JP S59162014A JP 58036352 A JP58036352 A JP 58036352A JP 3635283 A JP3635283 A JP 3635283A JP S59162014 A JPS59162014 A JP S59162014A

Authority

JP

Japan

Prior art keywords

pedestal

cutting

silicon wafer

wafer

ceramics

Prior art date

1983-03-04

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Links

• Espacenet
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• 238000005520 cutting process Methods 0.000 title claims description 22
• 239000000919 ceramic Substances 0.000 title claims description 18
• NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 30
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
• 229910052710 silicon Inorganic materials 0.000 claims description 20
• 239000010703 silicon Substances 0.000 claims description 20
• 239000013078 crystal Substances 0.000 claims description 9
• WSNJABVSHLCCOX-UHFFFAOYSA-J trilithium;trimagnesium;trisodium;dioxido(oxo)silane;tetrafluoride Chemical compound [Li+].[Li+].[Li+].[F-].[F-].[F-].[F-].[Na+].[Na+].[Na+].[Mg+2].[Mg+2].[Mg+2].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O WSNJABVSHLCCOX-UHFFFAOYSA-J 0.000 claims description 7
• GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
• 229910052785 arsenic Inorganic materials 0.000 claims description 3
• 229910052733 gallium Inorganic materials 0.000 claims description 3
• RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
• 235000012431 wafers Nutrition 0.000 description 33
• 238000000034 method Methods 0.000 description 14
• 229910003460 diamond Inorganic materials 0.000 description 8
• 239000010432 diamond Substances 0.000 description 8
• 239000011521 glass Substances 0.000 description 6
• 229920001721 polyimide Polymers 0.000 description 6
• YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
• 239000000853 adhesive Substances 0.000 description 4
• 230000001070 adhesive effect Effects 0.000 description 4
• 229910052731 fluorine Inorganic materials 0.000 description 4
• 239000011737 fluorine Substances 0.000 description 4
• KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
• 230000000052 comparative effect Effects 0.000 description 3
• 238000004519 manufacturing process Methods 0.000 description 3
• 239000000463 material Substances 0.000 description 3
• 239000000203 mixture Substances 0.000 description 3
• 229910052628 phlogopite Inorganic materials 0.000 description 3
• 239000000843 powder Substances 0.000 description 3
• 238000005245 sintering Methods 0.000 description 3
• JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
• 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
• 239000010445 mica Substances 0.000 description 2
• 229910052618 mica group Inorganic materials 0.000 description 2
• 239000002245 particle Substances 0.000 description 2
• NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
• 239000012744 reinforcing agent Substances 0.000 description 2
• IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
• KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
• OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
• HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
• 238000005299 abrasion Methods 0.000 description 1
• 229910052783 alkali metal Inorganic materials 0.000 description 1
• 150000001340 alkali metals Chemical class 0.000 description 1
• 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
• 150000001342 alkaline earth metals Chemical class 0.000 description 1
• PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
• 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
• 238000013459 approach Methods 0.000 description 1
• 229910002114 biscuit porcelain Inorganic materials 0.000 description 1
• 238000007796 conventional method Methods 0.000 description 1
• 238000005336 cracking Methods 0.000 description 1
• 238000005516 engineering process Methods 0.000 description 1
• 150000002222 fluorine compounds Chemical class 0.000 description 1
• 238000007429 general method Methods 0.000 description 1
• 239000011812 mixed powder Substances 0.000 description 1
• NBIIXXVUZAFLBC-UHFFFAOYSA-N phosphoric acid Substances OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
• 238000005498 polishing Methods 0.000 description 1
• 235000003270 potassium fluoride Nutrition 0.000 description 1
• 239000011698 potassium fluoride Substances 0.000 description 1
• 238000003825 pressing Methods 0.000 description 1
• 238000011160 research Methods 0.000 description 1
• 238000012360 testing method Methods 0.000 description 1
• ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 1
• 230000002747 voluntary effect Effects 0.000 description 1
• 229910052725 zinc Inorganic materials 0.000 description 1
• 239000011701 zinc Substances 0.000 description 1

Cited By (1)