JPS59157279A - Vapor deposition device for thin film - Google Patents

Abstract

PURPOSE:To enable formation of a film deposited by evaporation having high adhesive strength in the stage of forming the thin film of a metal, alloy or their compd. by vapor deposition on a substrate surface in a vacuum vessel by ionizing the fine particles of vapor deposition material. CONSTITUTION:A counter electrode 12 attached with a substrate 13 on which a thin film of a metal such as Al, Au or the like or the oxide, fluoride or sulfide of the metal or the alloy thereof is to be deposited by evaporation is placed in a vacuum vessel 2. A coil 10, a grid 8, a filament 6 and a vapor deposition source 4 are disposed successively in said vessel. The inside of the vessel 2 is evacuated and the atmosphere mixed with an inert gas such as Ar and an active gas such as O2, NH3, H2S or the like according to the kind of the thin film to be deposited by evaporation, i.e., oxide, nitride, sulfide, etc. is formed therein. The source 4 is electrically heated to evaporate and the vapor thereof collides against the thermion emitted from the filament 6 and releases an outer shell electron which is made positive ion. The rate of ionization is increased by the grid impressed with a positive voltage and the ion is accelerated by the coil 10 of a negative pole and advances toward the counter electrode 12 of a negative pole so as to react with the active gas and to form the oxide, nitride or sulfide, which collides at a high speed against the substrate 13 surface, thereby forming the thin film having high adhesive strength thereon.

Description

[Detailed description of the invention] The present invention relates to a thin film deposition apparatus.

Various types of apparatuses for forming thin films on a substrate to be vapor-deposited have been known in the past, and their methods are also extremely diverse.

However, with conventional thin film deposition equipment, the adhesion of the formed thin film to the substrate to be deposited is weak, or the thin film formed does not adhere to the substrate to be deposited, which does not have heat resistance. There were problems such as difficulty in forming a four-layer film.

The object of the present invention is to provide a substrate to which a deposition is to be performed, and to
A thin film with adhesive strength can be formed by vapor deposition, and even a plastic shade without heat resistance can be used as a substrate to be vapor-deposited.
The purpose is to provide a new method of thin film deposition equipment.

The present invention will be explained below.

The thin film deposition apparatus according to the present invention includes a vacuum chamber, a counter electrode, a lid, a filament for generating thermoelectrons, and an electrode for generating a high frequency electromagnetic field.

Active scum, inert scum, or a mixture of the two is introduced into the vacuum chamber.
;Temporarily hold and 1-evaporate the vapor deposition substrate)V;(
Who is white? Also, the evaporation source and counter electrode should be at the same potential.

Chryso1 is capable of passing evaporated substances,
It is placed between the evaporation source and the counter electrode, and is placed at a positive potential with respect to the potential of the counter electrode.

Since the counter electrode and the evaporation source are at the same potential, according to 11. Formed in the opposite direction.

Filanon 1- for generating thermionic electrons is placed on the vapor deposition source side in relation to the above 1j] 1- in the vacuum chamber, and the thermionic electrons generated by the second filament ionize a part of the evaporated substance. provided for.

The electrode for generating a high frequency electromagnetic field is installed inside or outside the vacuum chamber to generate a high frequency electromagnetic field between the electrode and the electrode, and the high frequency electromagnetic field is used to ionize the evaporated substance. 3+, f.

Some of the evaporated substances from the vapor deposition source are converted into positive ions by +2) electrons in the filament fat. In this way, -+F4+- is ionized 4 and passes through the evaporated substance (±, 1), which is further promoted to ionize into positive ions by the ionized dregs.
- is accelerated toward the substrate to be deposited.

Note that the electrons from )7r lasn 1- are absorbed by the node 1j, so they do not reach the substrate to be evaporated, and 2j
There is no heating due to electron impact. Even materials without heat resistance, such as plastics, can be used as the substrate to be deposited.

The following description will be made based on the illustrated embodiment. .

In the figure, Baseplay 1 to 1 and Pelger 2 are:
Through the para-kink 21 - (this is done and constitutes a vacuum chamber. The base plates 1 to 1 are connected to the electrode 3 which also serves as a support.
, 5, 7, 9. 11 pierced by II) or this;
11. Penetration parts such as IE + support electrode 3 etc./
v ′ Further, a hole IA formed in the center of the base plate 1-1 is connected to a vacuum system (not shown).

The pair of support electrodes 3 are made of tungsten,
It supports a resistance heating type evaporation source 4 made of a metal such as molybdenum formed into a coil shape.

Note that instead of such an evaporation source, an evaporation source used in a conventional vacuum evaporation method, such as an electron beam evaporation source, can be used as appropriate.

A filament 6 made of tungsten or the like for generating thermoelectrons is supported between the A pair of support electrodes 5.

The shape of the filament 6Q is determined by arranging a plurality of filaments in parallel or in the form of a wire to cover the spread of particles of the evaporated substance evaporated from the evaporation source. ing.

A grid 8 is supported on the support electrode 7 .

This grid is shaped to allow the evaporated material to pass through, in this example a 1'' shape.

A coil 10 is supported on the support electrode 9 .

The coil 10 is located on the side opposite to the evaporation source 4° to the filanone 1 and 6 with respect to the grid 8. The number of turns of coil 10 is 1
The following seven terms and conditions shall be determined as appropriate depending on the specific circumstances.

Further, it is not necessarily in the shape of a coil, but may be in the shape of a cylinder or a rod (wire).

A counter electrode 12 is supported on the support 11, and a substrate 13 to be deposited is held below it by an appropriate method. The second state is seen from the side of the evaporation source 4).
A counter electrode (2) must be placed behind the electrode.

Now, the support electrodes 3, 5, 7, 9. II is a conductor that also serves as an electrode, and the end portions of Q) that protrude outside the page space are connected to various power sources as shown.

First, the pair of support electrodes 3 are connected via an evaporation source power source 14. Further, a filament power source 15 is connected between the pair of supports ↑1j @pole 5.

Further, the output terminal of a high frequency power source 17 is connected to the support electrode 9. The support electrode 7 is connected to the positive terminal of the DC voltage power source 1G, and the support electrode 11 is connected to the negative terminal of the power source 16. Grounding in the diagram is mandatory.
M) There is no need for sushi.

In reality, the electrical connections include various switches, and the operation of these switches realizes the deposition process. , switches are not shown in the figure.

Hereinafter, thin film deposition using this example of the apparatus will be explained.

The substrate 13 to be evaporated is set as shown in the figure, and the evaporation material is held in the evaporation source 1. The material to be deposited will of course be determined depending on whether the desired film is to be formed. For example, aluminum. Metals such as aluminum and gold, or metal oxides, fluorides, and sulfur
It is a fireworks or an alloy.

In addition, in the vacuum chamber, there is a mixture of active force 2, inert dregs, or this 'EI PU combined dregs 10.
-' to 10-'' Torr.Here, for the sake of concreteness, it is assumed that the introduced scum is an inert scum, such as an alcone.

Now, when the apparatus is operated in this state, the evaporation material held in the evaporation source 4 is evaporated by heating by the evaporation source.

The evaporated material, that is, the particles of the evaporated material, spread out and fly toward the deposition target substrate 13, or some of them collide with thermionic electrons emitted from the lamens 1 to 1. The outer shell electrons are pushed out and converted into positive ions.

In this way, the partially evaporated substance becomes chryso1
<8, or in that case, 1- in the vicinity of the grid
Collisions of downwardly vibrating thermionic electrons further cause ions (
The hit rate is high.

On the other hand, inside the coil 0, the introduced particles are ionized by excitation by the high frequency electromagnetic field generated by the coil 10.

The portion of the evaporated material that has passed through the crit 8 that has not yet been ionized is further ionized as indicated by -, and is ionized into positive ions by collision with the dregs.

In this way, the evaporated substance ionized into positive ions is accelerated toward the deposition target substrate 13 by the action of the electric field from the chryso-1.
A collision occurs at high speed. In this way, a thin film with very good grain resistance is deposited. The above remarkable improvement in adhesion is due to
Improving the ionization rate of evaporated substances 1. ;Is it due to
This invention significantly improves the ion 1 Hi rate. Although the exact numerical value is not yet 1(), an ionization rate of several tens of percent has been experimentally confirmed.11.
I'm here.

Moreover, most of the thermoelectrons are absorbed by chryso1 and 8. Some of the thermoelectrons pass through Chryso I-8, but they are decelerated by the action of the electric field between the grid 8 and the substrate 13 to be deposited, so what if? &! f'r:! + Rikari j3
Even if it reaches , it heats the open radical vj, +3
1. 1.1゜In the present invention, since the ion flux rate of the evaporated substance is extremely high, the evaporated substance is removed by introducing active scum alone or together with inert scum into the vacuum chamber. Even in the case of forming a thin film with this compound by combining one layer of dokatsukaitosudo (2), it is possible to easily form a thin film with desired physical properties.

For example, in f911, alcon is introduced as an inert gas and oxygen is introduced as an active gas, and the pressure is set to 10-3 to 1O-4 Torr.
By adjusting the temperature to r and selecting aluminum as the evaporation material, a thin film of Al2O can be formed on the substrate to be evaporated. In this case, if you choose Sl or S10 as the evaporation substance, the thin film of S]02 is 1! 1), 7. If you choose n, it's nine In O.
A thin film of ZnO is obtained.

3 In addition, as quality residue, H2S, as evaporated matter (,
By selecting d, a thin film of CdS can be obtained. In addition, ammonia as an active compound)' with S as an evaporative substance, I''i with Ta as an evaporative substance, 'l' IN +1
．． It is also possible to obtain a thin film such as 1N. .

In addition, not only the high-frequency electromagnetic field but also the thermionic electrons from the filament 1~ contribute effectively to the heat generated by the ions of the waste in the vacuum chamber. It is possible to ionize the evaporated substance even under a high vacuum, and therefore it is possible to stretch the structure of the thin film and make it more compact. As a result, the incorporation of waste molecules into the thin film can be extremely reduced, making it possible to obtain a thin film of extremely high purity.In other words, the thin film deposition apparatus of the present invention constitutes Ic, 1.ST host'. Suitable for forming semiconductor films and high-purity metal thin films as electrodes.

In the figure, the axis of the coil 10 is parallel to the direction of the electric field for accelerating evaporated substance ions, but of course the axis and the direction of the electric field may intersect with each other. Also, it is not necessarily necessary to form a coil shape (in short, since it is good to generate a high frequency electromagnetic field between the above-mentioned chrysoline electrodes 1-8 and 1 electrode 12, it is not necessarily necessary to have a coil shape. Don't worry.

[Brief explanation of the drawing]

The figure is a partially sectional front view showing one embodiment of the present invention. 1...Haspray 1-12...Hertz A.
-14...Evaporation source, 6...Furament, 8...
Chryso 1, 10 ・Coil, 12...Counter electrode, 1
3... Vapor deposition target t1M, 1G... DC voltage power supply, ]7... High frequency power supply. Agent 1m ui to

Claims (1)

[Scope of Claims] A vacuum chamber into which active scum, inert scum, batter, or a mixture of both of these scum is introduced, an evaporation source for evaporating evaporated substances in the vacuum chamber, a counter electrode disposed in the vacuum chamber, holding the substrate to be evaporated so as to face the evaporation source, and placed at the same potential as the evaporation source; and a counter electrode disposed between the evaporation source and the counter electrode. 9. A grid through which the evaporated substance can pass, align this grid with the potential of the counter electrode, the evaporation source, and 2. iU
′: means for generating an electric current (r7), and t′L, a means for generating thermoelectrons for ionizing a part of the evaporated substance; A thin film deposition method having an electrode disposed inside the vacuum chamber or outside the vacuum chamber 1 to the filament 1 of Device.