JPS63455A - Vapor deposition device for thin film - Google Patents

Abstract

PURPOSE:To efficiently form the thin film of a vapor deposition material at a high yield on the surface of a substrate for vapor deposition by providing a thermion generating filament for ionization of a vapor deposition material on the substrate side of a grid in a vacuum vessel of a vapor deposition device for the thin film. CONSTITUTION:The vapor deposition material (for example, Al, Au, other metals) is held in a resistance heating type vapor deposition source 24 consisting of a coil made of a high melting metal such as W, or Mo in the vacuum vessel 14. After the inside of the vacuum vessel 14 is evacuated, an inert gas such as Ar or active gas such as O2, H2S or NH3 is supplied therein. The vapor deposition source 24 is electrically heated by an AC power source 32 and the Al or other metal held therein is evaporated. The pulverized evaporating particles splash toward the substrate 100 for vapor deposition and pass the grid 26. Thermions are generated by the energization of the W filament 28 provided between the grid 26 and the substrate 100, by which the pulverized evaporating particles of Al, etc., are converted to cations and are accelerated toward the substrate 100 connected to a negative electrode by a DC power source 36 and the thin film of Al, etc., is formed at a good yield. The thin compd. film of the oxide, sulfide, nitride, etc., of the vapor deposition material held in the vapor deposition source 24 is freely deposited by evaporation on the substrate according to the kind of the active gas in the vacuum vessel 14.

Description

[Detailed description of the invention] (Technical field) The present invention relates to a thin film deposition apparatus.

(Prior Art) A wide variety of thin film deposition apparatuses have been proposed and limited in the past. Among these various thin film deposition devices, there are several types of thin film deposition equipment. There is an apparatus known that can form a thin film with good dilatability against heat and also uses a plastic substrate with no % resistance as a substrate.

In this thin film deposition apparatus, a grid is interposed between a counter electrode that holds a substrate to be deposited and an evaporation source that faces the counter electrode. And, this grid 7 is made to have a positive potential with respect to the fly fly. Furthermore, a filament for thermionic generation is arranged between the grid and the evaporation source.

The vaporized substance evaporated from the evaporation source is positively ionized by thermionic electrons emitted from the filament.

When the positive ions pass through the grid, they are accelerated by the action of the electric field from the grid to the counter electrode and collide with the non-distilled substrate, forming a thin film with good adhesion.

The problem with such a thin film deposition apparatus RC is that cations are mainly generated on the evaporation source side of the grid, and due to the positive potential of the grid, a considerable amount of cations cannot pass through the grid. The number of cations that participate in thin film formation,
This decreases the efficiency of thin film formation, which is not necessarily good.

(Purpose) The invention was made in view of the above-mentioned circumstances, and its purpose is to improve the above-mentioned thin film deposition apparatus by counter-rolling, to form a thin film efficiently, and to create a new method. Along with the provision of thin film deposition equipment.

(Repentance accomplished) Non-invention will be explained below.

The uninvented two-piece distillation package includes a vacuum chamber and an evaporation source.

a counter electrode, a filament, a grid, a power supply means,
and conductive means.

A vacuum chamber is designed to introduce an active gas, an inert gas, or a mixed gas of an active gas and an inert gas into its internal space, and contains an evaporation source, a counter electrode, a filament,
The grid is placed within a vacuum chamber.

The counter electrode and the evaporation source are arranged in VC such that they face each other. The counter electrode is adapted to hold a substrate to be evaporated on its side facing the evaporation source. An evaporation source is a means for evaporating a deposited substance.

The grid is interposed between the evaporation source and the counter electrode and is brought to a positive potential with respect to the counter electrode by power supply means.

Therefore, during deposition, the electric field generated is directed from the grid to the counter electrode. Of course, the grid is capable of passing vaporized M'7W material.

The filament is for thermionic generation and is placed between the grid and the counter electrode.

``The power source means is a means for bringing the vacuum chamber into a predetermined electrical state, and the power source means and the inside of the vacuum chamber are electrically connected by a conductive means.

In this manner, in the thin film deposition apparatus of the present invention, since the filament is located on the counter electrode side of the grid, thermal electrons are used. The cations of the vapor deposited substance and the introduced gas are mainly generated on the counter electrode side of the electrode.

This will be explained below with reference to the drawings.

The figure shows one embodiment of the invention.

In the figure, reference numeral 10 indicates a base plate, reference numeral 12 indicates a backing, and reference numeral 14 indicates a Pelger.

Pelger 14 and base plate 10 are backing 1
2 is integrated into a ``'C vacuum chamber, and the inner 6 chambers are filled with active gas and/or infusible gas by an appropriate method known in the art.
i-sexual gas? etc. can be entered. A hole 10A drilled in the center of the base plate is connected to a page system (not shown).

The base plate 10 maintains the airtightness of the interior of the air conditioner.
In addition, electric tomes 16, 18, 20, and 22 are placed on the base plate 10 while maintaining electrical insulation with the base plate 10.

These 1 h 16, 18, 2 U, 22 are vacuum 1 inside and outside i, 1:j and Y? It is designed to be used as a conductive handle along with other bale handling tools.

Between the pair of electrodes 516, a gap made of tungsten, molybdenum, or the like was formed in a coil shape. Resistance heating type evaporator 24
is supported. The shape of the evaporation source may be a boat shape instead of a coil shape. Further, instead of the resistance heating type evaporation source, an evaporation source used in a conventional vacuum evaporation method, such as an electron beam evaporation source, can be used as appropriate.

Further, between the pair of electrodes 20, a filament 28 made of tungsten or the like for generating thermoelectrons is supported. The shape of the filament 28 is such that it covers the spread of the particles of the evaporated substance evaporated from the evaporation source by arranging multiple filaments in parallel or forming a mesh. .

A grid 26 is supported on the electrode 18 . This grid is shaped to allow the evaporated effluent to pass through to the filament 28 side, and in this example it is in the form of a mesh.

A counter electrode 30 is supported by the front part of the electrode 22), and the substrate 100 to be evaporated is supported by an appropriate method in the enclosure 11 of the counter electrode 60 facing the evaporation source 24. Ru.

The electrode 16 supporting the evaporation source 24 is connected to an AC electric sound 6 for heating.
2.

Further, the electrode 18 is connected to the positive and negative sides of a DC voltage power source 66, and the electrode 22 is connected to the negative side of the power source 66. Therefore, grid 26 is at a positive potential with respect to counter electrode 60, and grid 26. Between the counter electrodes 60, the electric field is directed from the grid 26 to the counter electrodes 60.

Further, the pair of electrodes 20 are connected to a power source 34.

Therefore, in this embodiment, the power supplies 62, 34, 36 constitute power supply means. Note that the grounding shown in the figure is not necessarily necessary.

In solid lines, the electrical connections include various switches (constituting part of the conductive means), and the operation of these switches executes the deposition process, but these switches are omitted from the drawing.

Below is a thin film using this equipment example? I will explain about the 4th place.

The N substrate 100 to be evaporated is held by the counter electrode 60 as shown in the figure,
The deposition material is held in the deposition source 24. The material to be deposited will, of course, be determined depending on what kind of thin film is to be formed.

For example, it is a metal such as aluminum or gold, or a metal oxide, fluoride, sulfide, or alloy.

In addition, in the vacuum chamber, active gas, inert gas, or a mixed gas thereof is preliminarily charged at a temperature of 10-2 to IQ T
It is introduced at a pressure of orr. For the time being,
Assume that this introduced gas is, for example, an inert gas such as argon.

When the device is operated in this state, the evaporation source 24 V
By heating with C, the evaporation material held in the evaporation source 24Vc is evaporated. The evaporated material, that is, the particles of type 2 deposited material, fly toward the deposition target substrate 100 in a creeping manner and pass through the grid 26 .

On the other hand, thermoelectrons are emitted from the filament 28,
The generated thermoelectrons are the electric current between grid 26 and phantom 1 attack 0! The particles fly toward the grid 26 while being accelerated by ¥, and when they collide with the vapor deposition material particles that have passed through the grid 26, the particles are positively ionized and ionized.

The ionized vapor deposition material is transferred from the grid 28 to another electrode 6.
The target substrate 100 flies while being accelerated by the action of the electric field toward 0, and collides with the deposition target substrate 100 at high speed.
A desired thin film is formed on 0. This thin film has excellent adhesion to the substrate, and has good crystallinity and orientation. This is due to ions f of the vapor deposited material.

In the thin film deposition apparatus of the present invention, since the ionization rate of the evaporated deposition substance is high, the active gas can be used alone or together with an inert gas in the vacuum chamber [by performing the deposition with four people].
Even when a vaporized substance and an active gas are combined and a thin film is formed from this compound, a thin film having desired physical properties can be easily obtained.

For example, if argon is introduced as an inert gas and oxygen is introduced as an active gas, the pressure is adjusted to 10 to 1 J Torr, and aluminum is selected as the evaporator, a thin film of Ae203 can be obtained on the entire plate to be evaporated. , if In and Zn are selected as evaporative substances, In2O5,
One inch of ZnO is obtained.

If H2S is selected as the active gas and Cd is selected as the evaporative substance, a thin film of CdS can be obtained. Furthermore, ammonia is used as an active gas along with argon to evaporate! +′
/lJ If you choose Ti or Ta as the quality, you will get TiN.

Although it is possible to obtain a thin film of TaN, etc., thermionic electrons effectively contribute to the ionization of the evaporated substance and the introduced gas, so it is necessary to perform the deposition under a high vacuum of IQ Torr or higher). Since it is possible to damage and reduce the incorporation of gas molecules into the thin film, it is possible to create a highly pure thin film.

That is, the uninvented thin film deposition apparatus is suitable for forming semiconductor thin films constituting ICs, LSIs, etc., and high-purity metal thin films as electrodes thereof.

(Effects) As described above, according to the present invention, it is possible to provide a novel urination device. In this device, the ions that participate in thin film formation are generated on the deposition substrate side 1 of the grid, so the generated ions can effectively participate in thin film formation, and thin film formation can be performed in an efficient 5C manner. can.

[Brief explanation of drawings]

The figure is a partially Di-plane front view showing one actual flow example of the present invention. 10...Base plate, 14...Pelger, 2
4... Evaporation source, 26... Grid, 2B... Filament, 30... Counter electrode, 10 ports... Deposition target substrate

Claims (1)

[Scope of Claims] A vacuum chamber into which an active gas and/or an inert gas can be introduced; an evaporation source disposed within the vacuum chamber; disposed so as to face the evaporation source within the vacuum chamber; a counter electrode that holds the substrate to be evaporated; a filament for generating thermionic electrons that is disposed between these evaporation sources and the counter electrode; and a filament that is disposed between this filament and the evaporation source and that allows the evaporation material to pass through. a grid, a power supply means for achieving a predetermined electrical state in the vacuum chamber, and a conductive means for electrically connecting the inside of the vacuum chamber and the power supply means, and for the counter electrode, the A thin film deposition apparatus characterized in that a grid has a positive potential.