JPS59154039A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To realize double-layer wiring on a flat insulating film by providing a groove at the surface of semiconductor substrate, burying a first electrode wiring layer in such a groove and forming an insulating film so thate the semiconductor surface becomes flat and to improve yield by eliminating short-circuitting of wirings between layers. CONSTITUTION:An N type layer 2 is formed on a P type substrate 1 and a P type diffused layer 3 on such N layer 2. An etching groove 9 for forming electrode is formed by etching to the N type layer 2, an N type electrode 4 is formed to the etching groove 9 by the lift-off method of the vacuum deposition method, an insulating film 5 is formed by the CVD method, a through hole 7 is bored by the rithography and a P type electrode 6 is formed by the vacuum-deposition method. A semiconductor device thus manufactured allows the P type electrode 6 as the second electrode to be formed on the flat insulating film by burying the N type electrode 4 as the first layer electrode at the surface of substrate. Accordingly, disconnection of electrode wiring does not occur at the stepped region and the yield can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a method of manufacturing a semiconductor device that makes it possible to obtain two-layer wiring without steps.

(Prior Art) A conventional semiconductor device is manufactured as shown in FIGS. 1(a) to 1(c).
In C), 1 is a P-type substrate (or N-type), 2 is an N-type layer (or P-type layer), 3 is a P-type diffusion layer (or N-type diffusion layer), and 4 is an N-type electrode (or P-type electrode), 5 is an insulating film,
6 is a P-type electrode (or N-type electrode), 7 is a through hole,
8 is a step in the insulating film.

Next, a method for manufacturing this semiconductor device will be described. First, as shown in FIG. 1(a), an N-type layer 2 is formed on a P-type substrate 1. Next, a P-type diffusion layer 3 is diffused into the N-type layer 2, and an N'-type electrode 4 is formed on the N-type layer 2 by vacuum evaporation.

Next, as shown in FIG. 1(b), an insulating film 5 is grown on the surface of the P-type substrate 1 by CVD, and through-holes 7 in the insulating film are formed by known phosphorography.

As shown in FIG. 1(c), a P-type electrode 6 is formed on this substrate by vacuum evaporation. At this time, the step 8 of the insulating film 5
This may cause the P-type electrode 6 to break off, or the N-type electrode 4 and P
There was a drawback that the mold electrode 6 was short-circuited, resulting in a decrease in yield of 9.

(Purpose of the Invention) This invention was made to eliminate the above-mentioned drawbacks of the conventional technology, and allows the second layer of electrode wiring to be wired on a flat insulating film, while also requiring two or more layers of wiring. It is an object of the present invention to provide a method for manufacturing a semiconductor device which can also be used for semiconductor devices and can prevent short circuits between electrodes between layers and improve yield.

(Structure of the Invention) A method for manufacturing a semiconductor device according to the present invention includes etching the surface of a semiconductor substrate to form a groove, embedding a first layer of electrodes in the grooves, and etching the semiconductor device after forming the first layer of electrodes. The insulating film is formed so that the surface is flat.

(Embodiments) Hereinafter, embodiments of the semiconductor device of the present invention will be described based on the drawings. FIG. 2(a) to FIG. 2(d) are process explanatory diagrams for explaining one embodiment thereof. This second
In Figures (a) to 2(d), Figures 1(a) to 1
The same parts as in Figure (c) will be described with the same reference numerals.

First, as shown in FIG. 2(a), an N-type layer 2 (or P-type layer) is formed on a P-type substrate 1 (or N-type), and a P-type diffusion layer 3 (or (N-type diffusion layer).

Next, an etching groove 9 for forming an electrode is created in the N-type layer 2 by etching, and an N-type electrode 4 (or a P-type electrode) is formed in the etching groove 9 by vacuum deposition, as shown in FIG. 2(b). As shown in FIG. 2(c), an insulating film 5 was grown using the CVD method, and a through hole 7 was formed using phosphorography to form a P-type electrode as shown in FIG. 2(d). 6 (or an N-type electrode) by vacuum evaporation.

In the semiconductor device manufactured in this way, by embedding the N-type electrode 4 as the first-layer electrode into the substrate surface, the P-type electrode 6 as the second-layer electrode can be formed on a flat insulating film. Yield is improved without causing disconnection of electrode wiring.

As explained above, in this embodiment, one of the two-layer electrodes is embedded in the surface of the semiconductor substrate, so
Since wiring is performed on a flat insulating film when forming layered electrodes, breakage due to step differences in the insulating film can be prevented, and the yield rate can be improved.

Figure 3 shows a G manufactured by the manufacturing method explained in the first example.
This is a perspective view of an aAsP LED display, and 10 is a P-type GaAsP substrate, 11 is an N-type layer, 12 is a P-type layer, 13 is an N-type electrode, 14 is an insulating film, and 15 is a P-type electrode.

First, an N-type layer 11 is formed on a GaAsP substrate 1o using an ion implantation method, and then a P-type layer 12 is diffused into the N-type layer 11 using a selective diffusion method.

Next, an etching groove 9 is etched in the N-type layer 11 by the thickness of the N-type electrode 13, a stain electrode is deposited in the etching groove 9 using a vacuum evaporation method, and an N-type electrode 13 is formed using a lift-off method.

As a result, the surface of the substrate becomes flat after the N-type electrode 13 is formed.

Next, an insulating film 14 such as Sin is grown on the substrate surface using the CVD method, through poles 7 are created on the P-type layer 12 using phosphorography, and P is etched using a vacuum evaporation method and etching.
Wire the mold electrode 15.

In this way, by embedding the N-type electrode 13 in the substrate surface, when the second layer of electrode wiring is performed, it can be formed on a flat insulating film, which prevents the electrode wiring from breaking and improves the yield. .

(Effects of the Invention) As described above, according to the method for manufacturing a semiconductor device of the present invention, a groove is provided in the surface of a semiconductor substrate, and after the first layer of electrode wiring is embedded in the groove, the semiconductor surface is flat. Since the insulating film is formed to act as a support, there is an advantage that when performing two-layer wiring, the second layer of electrode wiring can be wired on a flat insulating film, which eliminates the need for two or more layers of wiring. It can also be used in semiconductor devices, eliminates short circuits between layers, and improves yield.

[Brief explanation of the drawing]

FIGS. 1(a) to 1(c) are process explanatory diagrams for explaining a conventional method of manufacturing a semiconductor device, and FIGS. 2(a) to 2(d) are semiconductors of the present invention, respectively. FIG. 3 is a process explanatory diagram of an embodiment of the device, and FIG. 3 shows a GaAsP LE manufactured by the manufacturing method of the semiconductor device of the present invention.
It is a perspective view of D display. DESCRIPTION OF SYMBOLS 1... P type substrate, 2... N type layer, 3... P type diffusion layer, 4... N type electrode, 14... Insulating film, 15...
P-type electrode, 7... Through hole, 8... Insulating film step, 9... Etching groove, 10... P-type GaAsP
Substrate, 11... N-type layer, 12... P-type layer, 13...
・N-type electrode. Figure 1 District 2 Figure 3 71+ 1215 10 So

Claims (1)

[Claims] An etching groove is formed on the surface of the semiconductor substrate, a first layer electrode is embedded in this etching groove and wiring is performed, and after wiring the first layer electrode, the semiconductor substrate surface (two flat insulating films are formed). A method for manufacturing a semiconductor device, characterized in that: