JPS59152634A - Ｍｏｓ半導体デバイス - Google Patents

Ｍｏｓ半導体デバイス

Info

Publication number
JPS59152634A
JPS59152634A JP58026249A JP2624983A JPS59152634A JP S59152634 A JPS59152634 A JP S59152634A JP 58026249 A JP58026249 A JP 58026249A JP 2624983 A JP2624983 A JP 2624983A JP S59152634 A JPS59152634 A JP S59152634A
Authority
JP
Japan
Prior art keywords
electrophoresis
less
amorphous
thin film
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58026249A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0226779B2 (https=
Inventor
Keiji Kobayashi
啓二 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58026249A priority Critical patent/JPS59152634A/ja
Publication of JPS59152634A publication Critical patent/JPS59152634A/ja
Publication of JPH0226779B2 publication Critical patent/JPH0226779B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
JP58026249A 1983-02-21 1983-02-21 Ｍｏｓ半導体デバイス Granted JPS59152634A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58026249A JPS59152634A (ja) 1983-02-21 1983-02-21 Ｍｏｓ半導体デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58026249A JPS59152634A (ja) 1983-02-21 1983-02-21 Ｍｏｓ半導体デバイス

Publications (2)

Publication Number Publication Date
JPS59152634A true JPS59152634A (ja) 1984-08-31
JPH0226779B2 JPH0226779B2 (https=) 1990-06-12

Family

ID=12188001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58026249A Granted JPS59152634A (ja) 1983-02-21 1983-02-21 Ｍｏｓ半導体デバイス

Country Status (1)

Country Link
JP (1) JPS59152634A (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS491611A (https=) * 1972-04-19 1974-01-09
JPS5263070A (en) * 1975-11-19 1977-05-25 Hitachi Ltd Production of semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS491611A (https=) * 1972-04-19 1974-01-09
JPS5263070A (en) * 1975-11-19 1977-05-25 Hitachi Ltd Production of semiconductor element

Also Published As

Publication number Publication date
JPH0226779B2 (https=) 1990-06-12

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