JPS59150434A - Manufacture and apparatus of semiconductor device - Google Patents

Manufacture and apparatus of semiconductor device

Info

Publication number
JPS59150434A
JPS59150434A JP58017391A JP1739183A JPS59150434A JP S59150434 A JPS59150434 A JP S59150434A JP 58017391 A JP58017391 A JP 58017391A JP 1739183 A JP1739183 A JP 1739183A JP S59150434 A JPS59150434 A JP S59150434A
Authority
JP
Japan
Prior art keywords
gas
wire bonding
mounting
porous
ambient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58017391A
Other languages
Japanese (ja)
Inventor
Shinichi Miyata
伸一 宮田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58017391A priority Critical patent/JPS59150434A/en
Publication of JPS59150434A publication Critical patent/JPS59150434A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10162—Shape being a cuboid with a square active surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To uniformize the gas ambient of the mounting part or wire bonding part by providing a porous gas releasing member which allows the gas to pass to the one main surface of heating member, supplying a non-oxidizing or reductive gas thereto, forming a gas ambient to the mounting part or wire bonding part by releasing the gas, and by mounting a device or executing the wire bonding under said gas ambient. CONSTITUTION:A gas release member 16 made of porous sintered alloy is disposed at the surface of a heater block 15. This gas release member 16 is connected with a gas supply tube 17 and the gas supply tube 17 is spreading at the connecting part in order to uniformly supplying the gas to the gas releasing member 16. The gas supplied to the gas supply tube 17 is heated by the heater block 15, passes the gas releasing member 16 and is then released to the wire bonding part from the clearance of lead frame 2. The gas releasing member 16 is provided with a countless number of holes and therefore the gas is almost uniformly released to the entire part of wire bonding part and thereby favorable gas ambient can be obtained.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体チップのマウントあるいはワイヤボンデ
ィングに於いて使用される、ガス雰囲気を改良した半導
体装置の製造方法及び半導体製造装置に関する。１ 〔発明の技術的背景とその問題点〕 半導体チップをリードフレームに半田により固着する場
合は、半田を溶解させるためそのマウント部を２５０〜
４００　’Ｏ程度まで加熱することが必要いてマウント
部を非酸化性あるいは還元性の雰囲気中に保つことが多
い。また半導体チップとリードフレームのリードとを金
細線を熱圧着させて接続する場合にも、そのワイヤボン
ディング部を２００〜３５０　’Ｏに加熱する必要があ
り、同様にワイヤボンディング部を非酸化性あるいは還
元性の雰囲気（以下ガス雰囲気と称す）で保つことが多
い。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor device manufacturing method and a semiconductor manufacturing apparatus with improved gas atmosphere, which are used in semiconductor chip mounting or wire bonding. 1 [Technical background of the invention and its problems] When a semiconductor chip is fixed to a lead frame by solder, the mounting part must be heated to a temperature of 250 to 250 mm to melt the solder.
It is necessary to heat up to about 400'O, and the mount is often kept in a non-oxidizing or reducing atmosphere. Also, when connecting a semiconductor chip and a lead frame lead by thermocompression bonding a thin gold wire, it is necessary to heat the wire bonding part to 200 to 350'O. It is often maintained in a reducing atmosphere (hereinafter referred to as a gas atmosphere).

ガス雰囲気を形成する方法はマウント装置とワイヤボン
ディング装置とではほとんど同じであるので、以後ワイ
ヤボンブイラグ装置を例にとって説明する。第１図（ａ
）にその−例を示す。ヒータプロック１上にリードフレ
ーム２が載置されており、押きえ板３によりリードフレ
ーム２はヒータブロック１に押圧されている。リードフ
レーム２上に半冑体チップ４が固着されており、その上
方にはキャピラリ６が移動自在に配置されている。ヒー
タブロック１に設けられた穴に、電源に′接続゛された
ヒータ７が挿入されており、このヒータ７によりヒータ
フロック１が加熱され、とのヒータブロック１により、
リー　ドフレーム２や半導体チップ４が加熱される。ワ
イヤボンディング部すなわち半Ｗ体チッフ４周辺部の側
上方にパイプ５が配置されている。なおキャピラリ等の
駆動機構は省略（た。本装置においては、パイプ５に加
熱されたガスを供給し、その先端部よりカスをワイヤボ
ンディング部に吹付けて、ガス雰囲気を形成する。Since the method for forming a gas atmosphere is almost the same for a mounting device and a wire bonding device, the following explanation will be given using a wire bonding lug device as an example. Figure 1 (a
) shows an example. A lead frame 2 is placed on a heater block 1, and the lead frame 2 is pressed against the heater block 1 by a holding plate 3. A half-shell chip 4 is fixed on a lead frame 2, and a capillary 6 is movably arranged above it. A heater 7 connected to a power source is inserted into a hole provided in the heater block 1, and the heater block 1 is heated by the heater 7.
The lead frame 2 and semiconductor chip 4 are heated. A pipe 5 is disposed above the wire bonding portion, that is, the peripheral portion of the half-W chip 4. Note that a drive mechanism such as a capillary is omitted. In this apparatus, a heated gas is supplied to the pipe 5, and a gas atmosphere is created by blowing the waste onto the wire bonding part from the tip thereof.

Ｌ、かしキャピラリ６に、ワイヤボンディング部付近を
自由自在に移動できるようＶこしておく必敷があるため
、パイプ５をワイヤボンディング部にあまり近づけるこ
とはできず、この方法ではパイプ５をカス雰囲気形成の
だめの最適位置に配置するととが困難である。さらにキ
ャピラリ６と）ζイブ５とが近接するため、キャピラリ
６の取り換えに支障をきたす場合があった。L, the pipe 5 cannot be brought too close to the wire bonding part because it is necessary to put a V in the capillary 6 so that it can move freely near the wire bonding part. It is difficult to locate the tank at the optimum position for creating an atmosphere. Furthermore, since the capillary 6 and the ζ eve 5 are close to each other, it may be difficult to replace the capillary 6.

第１図（ｂ）に他の例を示す。ヒータブロック８にガス
パイプ１３が設けられている。押さえ板１（）にはガス
が通る穴１２が形成されており、その上部しこはガスの
流路を変える遮蔽板１１が設けられている。その他の部
分は第１図（ａ）と同じであるので説明を省略する。ガ
スをガスパイプ１；３に供給すると、そのガスは加熱さ
れ、リードフレーム２ｒ山 のすき川を通りぬけ、穴１２を通り遮蔽板１１により流
路を変えられて、ワイヤボンライング部に吹き出し、ガ
ス雰囲気を形成する。しかしこの方法では半導体チップ
４が大きくなりガス１′グ囲気を形成すべき部分が拡が
ると所望のガス雰囲気を（ｉるのが難しくなる。特にリ
ードフレーム２表面の押さえ板１０により棲われていな
い部分の大きさ口 が７〜８龍件以上になると、所望のガス雰囲気を得るの
に大きな支障が生じる。Another example is shown in FIG. 1(b). A gas pipe 13 is provided in the heater block 8. A hole 12 through which gas passes is formed in the holding plate 1 ( ), and a shielding plate 11 is provided at the upper part of the hole 12 to change the flow path of the gas. The other parts are the same as those in FIG. 1(a), so their explanation will be omitted. When gas is supplied to the gas pipes 1 and 3, the gas is heated, passes through the mountain of the lead frame 2r, passes through the hole 12, is changed in flow path by the shielding plate 11, and is blown out to the wire bonding section. Form a gas atmosphere. However, in this method, as the semiconductor chip 4 becomes larger and the area where the gas 1' atmosphere should be formed expands, it becomes difficult to create the desired gas atmosphere. If the size of the portion exceeds 7 to 8 pieces, it will be a big problem to obtain the desired gas atmosphere.

〔発明の目的〕[Purpose of the invention]

本発明は上記の事情に鑑みてなされたもので、マウント
部あるいはワイヤボンディング部のガス雰囲気を均一と
した＃溝体装置の製造方法及び半？−ＩＶ、体製造装置
、を提供することを目的とする。The present invention has been made in view of the above-mentioned circumstances, and includes a method for manufacturing a #groove body device and a semi-finished device with a uniform gas atmosphere in the mounting portion or wire bonding portion. - IV, a body manufacturing device.

〔づダミ飄明のイ既、、νうぜ　」 加熱部材の一千ｍ）に、ガスを透通さぜ′る多孔性ガス
放散ｒ＋ｌＬ材を設け、これに非酸化性あるいは還元性
のガスを供給し、カスを放散させてマウント部まだはワ
イヤボンディング部にガス雰囲気を形成する。このガス
雰囲気中にてマウントｉたはワイヤボンディングを行う
。A porous gas dissipating material that allows gas to pass through is provided on the heating member (1,000 m long), and a non-oxidizing or reducing gas is injected into this material. A gas atmosphere is formed in the mounting section and the wire bonding section by dissipating the residue. Mounting or wire bonding is performed in this gas atmosphere.

カス放散部材は所定の孔数を有する多孔性物質その孔が
ふさがれてしま、う恐れがあり、所望のガス雰囲気を形
成することが困難となるためである。This is because the waste dissipation member is a porous material having a predetermined number of pores, and there is a risk that the pores will be blocked, making it difficult to form a desired gas atmosphere.

〔発明の実施例〕[Embodiments of the invention]

第２図に本発明の一実施例に係るワイヤボンディング装
置を示す。ヒータブロック１５の表面部に多孔１＝１．
の焼結合金で作られたガス放散部材１６ガ配置されてい
る゛。このガス放散部材１６にはカス供給管１７が接続
されており、その接続部においてガス供給管１７は、ガ
ス放散部材１６に一様にガスを供給するため拡がってい
る。その他の部分は紀１図（ａ）と同じであるのでｉＲ
１明を省略する。なお第２図（ｂ）においてはキャピラ
リを省略（−２だ。ガス供給管１７に供給きれたガスｔ
」、ヒータブロック１５で加熱孕れた後、ガス放散部材
１６を通過し、リードフレーム２のずきまよりワイヤボ
ンディング部へ放出される。FIG. 2 shows a wire bonding apparatus according to an embodiment of the present invention. The surface of the heater block 15 has pores 1=1.
A gas dissipation member 16 made of a sintered alloy is arranged. A waste supply pipe 17 is connected to the gas dispersion member 16, and the gas supply pipe 17 widens at the connection point to uniformly supply gas to the gas dispersion member 16. The other parts are the same as Figure 1 (a), so iR
1 omitted. Note that the capillary is omitted in Fig. 2(b) (-2).
After being heated by the heater block 15, the gas passes through the gas dissipation member 16 and is emitted from the gap in the lead frame 2 to the wire bonding section.

ガス放散部材１６には非常に多数の穴があるためガスは
ワイヤボンディング部の全面に１１ぼ一様に放出され、
良好なカス雰囲気を得ることができる。また同時に半導
体チップやリードフレームの形や太−きさに変更があっ
た場合でも、ワイヤボンディング部の大きさがガス放散
部材よりも大きくならない限り、同一装置で対応できる
。Since the gas dissipation member 16 has a large number of holes, the gas is emitted evenly over the entire surface of the wire bonding part.
A good dust atmosphere can be obtained. At the same time, even if there is a change in the shape or thickness of the semiconductor chip or lead frame, the same device can be used as long as the size of the wire bonding part does not become larger than the gas dissipation member.

本実施例においてはワイヤボンディングを行う場合を示
したが、本発明はマウントを行う場合にも適用できる。Although this embodiment shows the case where wire bonding is performed, the present invention can also be applied to the case where mounting is performed.

またガス放散部材の材料は耐熱性・′・）ある多孔性物
質であればよく、焼結合金に限らない。Further, the material of the gas dissipation member may be any heat-resistant porous material, and is not limited to a sintered alloy.

〔５ｉｌ′ｉ明の効果〕 本発明によればマウント部あるいはワイヤボンフィング
部に均一な非酸化性丑たは還元性の雰囲気を形成するこ
とができ、リードフレームや半田等の［ｖ化を防止でき
る。またそのだめの装置の構造は従来のものに比べ簡略
化されており、装置製作が容易である。[Advantageous effect] According to the present invention, it is possible to form a uniform non-oxidizing or reducing atmosphere in the mounting part or wire bonding part, and it is possible to form a uniform non-oxidizing or reducing atmosphere in the mount part or wire bonding part, and it is possible to It can be prevented. In addition, the structure of the device is simpler than that of the conventional device, and the device is easy to manufacture.

【図面の簡単な説明】[Brief explanation of drawings]

；；’に　Ｉレイ自ａ）　、　（ｂ）は従来のワイヤボ
ンディング装佑′ケ示す断１１１１図、第２図（ａＪ　
＆ｉ、本発明の一実施例を示ｊ−ｋＪｉ面図、Ｈ３２図
（ｂ）はその平面図である。 １．８．ｉ５・・・ヒートプロリフ、６・・・キャピラ
リ、２・・リードフレーム、４・・・半轡体チッゾ１６
・・カス放散部材。 代理人　弁理士　則　近　憲　佑 （ほか１名） 電　１６ ＼ り ｔｂ＋ ′ｆ　ｚ　図 （ｃＬ　　λ （ｂン ７／乙 ７・′ ４−／;;'I-ray self a) and (b) are cross-sections showing the conventional wire bonding equipment.
&i, A j-kJi plane view showing an embodiment of the present invention, and Fig. H32 (b) is a plan view thereof. 1.8. i5...Heat prolife, 6...Capillary, 2...Lead frame, 4...Half body Chizzo 16
...Resist dissipation member. Agent Patent attorney Kensuke Chika (and 1 other person) Telephone 16 ＼ ritb+ ′f z fig.

Claims (2)

【特許請求の範囲】[Claims] （１）−主面を廟する加熱部材の前記主面に、ガスを透
過させる多孔性ガ、ス放散部材を設け°、この多孔性ガ
ス放散部材にガスを供給し、放散きれたガスにより前記
多孔性ガス放散部材の近傍にガス雰囲気を作り、このガ
ス雰囲気中にて半２＃、体のマウントまたはワイヤボン
ディングを行うことを特徴とする半導体装置の製造方法
。(1) - A porous gas dissipation member that allows gas to pass through is provided on the main surface of the heating member that encloses the main surface, and gas is supplied to the porous gas dissipation member, and the dissipated gas is used to dissipate the gas. A method for manufacturing a semiconductor device, comprising: creating a gas atmosphere in the vicinity of a porous gas dissipation member; and performing half-mount, body mounting, or wire bonding in this gas atmosphere. （２）−主面を有する加熱部材と、前記主面に設けられ
、カスを透過させる多孔性ガス放散部利と、この多孔性
ガス放散部材へのガス供給手段と、前記多孔付ガス放散
部材の近傍に配置されたマウント装置またはワイヤボン
ディング装置とを具備することを特徴とする半導体製造
装置。(2) - A heating member having a main surface, a porous gas dissipation section provided on the main surface that allows waste to pass through, a means for supplying gas to the porous gas dissipation member, and the porous gas dissipation member 1. A semiconductor manufacturing device comprising: a mounting device or a wire bonding device disposed near the semiconductor manufacturing device.
JP58017391A 1983-02-07 1983-02-07 Manufacture and apparatus of semiconductor device Pending JPS59150434A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58017391A JPS59150434A (en) 1983-02-07 1983-02-07 Manufacture and apparatus of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58017391A JPS59150434A (en) 1983-02-07 1983-02-07 Manufacture and apparatus of semiconductor device

Publications (1)

Publication Number Publication Date
JPS59150434A true JPS59150434A (en) 1984-08-28

Family

ID=11942693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58017391A Pending JPS59150434A (en) 1983-02-07 1983-02-07 Manufacture and apparatus of semiconductor device

Country Status (1)

Country Link
JP (1) JPS59150434A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61253824A (en) * 1985-05-02 1986-11-11 Toshiba Corp Semiconductor element assembling method
JPS649629A (en) * 1987-07-01 1989-01-12 Mitsubishi Electric Corp Method for supplying and compressing solder
WO2002009156A1 (en) * 2000-07-21 2002-01-31 Temptronic Corporation Temperature-controlled thermal platform for automated testing
US7810703B2 (en) * 2004-04-01 2010-10-12 Oki Semiconductor Co., Ltd. Wire bonding method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61253824A (en) * 1985-05-02 1986-11-11 Toshiba Corp Semiconductor element assembling method
JPH0462456B2 (en) * 1985-05-02 1992-10-06 Tokyo Shibaura Electric Co
JPS649629A (en) * 1987-07-01 1989-01-12 Mitsubishi Electric Corp Method for supplying and compressing solder
WO2002009156A1 (en) * 2000-07-21 2002-01-31 Temptronic Corporation Temperature-controlled thermal platform for automated testing
US6744270B2 (en) 2000-07-21 2004-06-01 Temptronic Corporation Temperature-controlled thermal platform for automated testing
US6867611B2 (en) 2000-07-21 2005-03-15 Temptronic Corporation Temperature-controlled thermal platform for automated testing
US7810703B2 (en) * 2004-04-01 2010-10-12 Oki Semiconductor Co., Ltd. Wire bonding method

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