JPS59147463A - 電界効果半導体装置 - Google Patents

電界効果半導体装置

Info

Publication number
JPS59147463A
JPS59147463A JP58019825A JP1982583A JPS59147463A JP S59147463 A JPS59147463 A JP S59147463A JP 58019825 A JP58019825 A JP 58019825A JP 1982583 A JP1982583 A JP 1982583A JP S59147463 A JPS59147463 A JP S59147463A
Authority
JP
Japan
Prior art keywords
junction
gate
field effect
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58019825A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0433131B2 (https=
Inventor
Hiroo Masuda
弘生 増田
Yasuhiro Shiraki
靖寛 白木
Susumu Takahashi
進 高橋
Takehisa Hayashi
剛久 林
Yasunari Umemoto
康成 梅本
Toshiyuki Usagawa
利幸 宇佐川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58019825A priority Critical patent/JPS59147463A/ja
Publication of JPS59147463A publication Critical patent/JPS59147463A/ja
Publication of JPH0433131B2 publication Critical patent/JPH0433131B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58019825A 1983-02-10 1983-02-10 電界効果半導体装置 Granted JPS59147463A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58019825A JPS59147463A (ja) 1983-02-10 1983-02-10 電界効果半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58019825A JPS59147463A (ja) 1983-02-10 1983-02-10 電界効果半導体装置

Publications (2)

Publication Number Publication Date
JPS59147463A true JPS59147463A (ja) 1984-08-23
JPH0433131B2 JPH0433131B2 (https=) 1992-06-02

Family

ID=12010075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58019825A Granted JPS59147463A (ja) 1983-02-10 1983-02-10 電界効果半導体装置

Country Status (1)

Country Link
JP (1) JPS59147463A (https=)

Also Published As

Publication number Publication date
JPH0433131B2 (https=) 1992-06-02

Similar Documents

Publication Publication Date Title
JPS63258072A (ja) 電界効果トランジスタ
US2736858A (en) Controllable electric resistance devices
JPH084138B2 (ja) 半導体装置
JPS6263472A (ja) パワ−ｍｏｓ−ｆｅｔ
CN115956297A (zh) 半导体装置
JPH04363069A (ja) 縦型半導体装置
JPS59147463A (ja) 電界効果半導体装置
EP0167810A1 (en) Power JFET with plural lateral pinching
US20230118661A1 (en) Space-free vertical field effect transistor including active layer having vertically grown crystal grains
CN205723544U (zh) 一种氮化镓基高电子迁移率晶体管
JPS6123364A (ja) 電界効果トランジスタ
TW200905874A (en) Heterojunction bipolar transistor
JPS5961190A (ja) 半導体構造体
US4635084A (en) Split row power JFET
JPH08316470A (ja) 電力用半導体素子
JPS61171179A (ja) 半導体結合超伝導素子
JPS61161766A (ja) 縦型ｍｏｓｆｅｔ
JP3096341B2 (ja) 高電子移動度トランジスタ
JPH05259437A (ja) 半導体装置
JPH05121453A (ja) 化合物半導体装置
JPH01125985A (ja) 半導体装置
JPS62143467A (ja) 半導体集積回路
JP2802971B2 (ja) 半導体装置
JPH07254707A (ja) 半導体装置
JPH0346973B2 (https=)