JPS5914602A - 電圧非直線抵抗器とその製造方法 - Google Patents
電圧非直線抵抗器とその製造方法Info
- Publication number
- JPS5914602A JPS5914602A JP57124692A JP12469282A JPS5914602A JP S5914602 A JPS5914602 A JP S5914602A JP 57124692 A JP57124692 A JP 57124692A JP 12469282 A JP12469282 A JP 12469282A JP S5914602 A JPS5914602 A JP S5914602A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- rare earth
- nonlinear resistor
- voltage nonlinear
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 24
- 238000010304 firing Methods 0.000 claims description 21
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 13
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 12
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 12
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 10
- 239000011787 zinc oxide Substances 0.000 claims 5
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000003825 pressing Methods 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 1
- 229910001954 samarium oxide Inorganic materials 0.000 claims 1
- 229940075630 samarium oxide Drugs 0.000 claims 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 description 8
- 239000000203 mixture Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000630 rising effect Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57124692A JPS5914602A (ja) | 1982-07-16 | 1982-07-16 | 電圧非直線抵抗器とその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57124692A JPS5914602A (ja) | 1982-07-16 | 1982-07-16 | 電圧非直線抵抗器とその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5914602A true JPS5914602A (ja) | 1984-01-25 |
| JPS6410081B2 JPS6410081B2 (enrdf_load_stackoverflow) | 1989-02-21 |
Family
ID=14891723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57124692A Granted JPS5914602A (ja) | 1982-07-16 | 1982-07-16 | 電圧非直線抵抗器とその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5914602A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5841183A (en) * | 1992-06-23 | 1998-11-24 | Mitsubishi Denki Kabushiki Kaisha | Chip resistor having insulating body with a continuous resistance layer and semiconductor device |
| CN116655369B (zh) * | 2023-06-19 | 2024-03-22 | 陕西科技大学 | 一种仅包含单个双肖特基晶界势垒的三层结构压敏陶瓷及其制备方法和应用 |
-
1982
- 1982-07-16 JP JP57124692A patent/JPS5914602A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5841183A (en) * | 1992-06-23 | 1998-11-24 | Mitsubishi Denki Kabushiki Kaisha | Chip resistor having insulating body with a continuous resistance layer and semiconductor device |
| CN116655369B (zh) * | 2023-06-19 | 2024-03-22 | 陕西科技大学 | 一种仅包含单个双肖特基晶界势垒的三层结构压敏陶瓷及其制备方法和应用 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6410081B2 (enrdf_load_stackoverflow) | 1989-02-21 |
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