JPS5914218B2 - イオンビ−ム発生装置 - Google Patents

イオンビ−ム発生装置

Info

Publication number
JPS5914218B2
JPS5914218B2 JP52050034A JP5003477A JPS5914218B2 JP S5914218 B2 JPS5914218 B2 JP S5914218B2 JP 52050034 A JP52050034 A JP 52050034A JP 5003477 A JP5003477 A JP 5003477A JP S5914218 B2 JPS5914218 B2 JP S5914218B2
Authority
JP
Japan
Prior art keywords
cathode
auxiliary electrode
work function
electron
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52050034A
Other languages
English (en)
Japanese (ja)
Other versions
JPS52135995A (en
Inventor
エドウイン・デイ・マクラナハン
ロナルド・ダブリユ・モス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Research and Development Administration ERDA
Original Assignee
Energy Research and Development Administration ERDA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Research and Development Administration ERDA filed Critical Energy Research and Development Administration ERDA
Publication of JPS52135995A publication Critical patent/JPS52135995A/ja
Publication of JPS5914218B2 publication Critical patent/JPS5914218B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
JP52050034A 1976-05-07 1977-05-02 イオンビ−ム発生装置 Expired JPS5914218B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US000000684418 1976-05-07
US05/684,418 US4046666A (en) 1976-05-07 1976-05-07 Device for providing high-intensity ion or electron beam

Publications (2)

Publication Number Publication Date
JPS52135995A JPS52135995A (en) 1977-11-14
JPS5914218B2 true JPS5914218B2 (ja) 1984-04-03

Family

ID=24747977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52050034A Expired JPS5914218B2 (ja) 1976-05-07 1977-05-02 イオンビ−ム発生装置

Country Status (6)

Country Link
US (1) US4046666A (enExample)
JP (1) JPS5914218B2 (enExample)
CA (1) CA1072913A (enExample)
DE (1) DE2720424A1 (enExample)
FR (1) FR2350687A1 (enExample)
GB (1) GB1559430A (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346330A (en) * 1980-04-14 1982-08-24 Thermo Electron Corporation Laser generated high electron density source
FR2494487A1 (fr) * 1980-11-14 1982-05-21 Kreindel July Source d'electrons et d'ions
US4377773A (en) * 1980-12-12 1983-03-22 The United States Of America As Represented By The Department Of Energy Negative ion source with hollow cathode discharge plasma
US4416755A (en) * 1981-04-03 1983-11-22 Xerox Corporation Apparatus and method for producing semiconducting films
JPS60164724A (ja) * 1984-02-07 1985-08-27 Seiko Epson Corp 電気光学装置
US4560462A (en) * 1984-06-22 1985-12-24 Westinghouse Electric Corp. Apparatus for coating nuclear fuel pellets with a burnable absorber
DE3503398A1 (de) * 1985-02-01 1986-08-07 W.C. Heraeus Gmbh, 6450 Hanau Sputteranlage zum reaktiven beschichten eines substrates mit hartstoffen
JPS6258546A (ja) * 1985-09-06 1987-03-14 Ulvac Corp 熱陰極型イオン源
JPH0772349B2 (ja) * 1987-05-12 1995-08-02 住友電気工業株式会社 大面積化合物薄膜の作製方法および装置
US4885070A (en) * 1988-02-12 1989-12-05 Leybold Aktiengesellschaft Method and apparatus for the application of materials
US5225057A (en) * 1988-02-08 1993-07-06 Optical Coating Laboratory, Inc. Process for depositing optical films on both planar and non-planar substrates
US4851095A (en) * 1988-02-08 1989-07-25 Optical Coating Laboratory, Inc. Magnetron sputtering apparatus and process
US5798027A (en) * 1988-02-08 1998-08-25 Optical Coating Laboratory, Inc. Process for depositing optical thin films on both planar and non-planar substrates
US5618388A (en) * 1988-02-08 1997-04-08 Optical Coating Laboratory, Inc. Geometries and configurations for magnetron sputtering apparatus
JPH02163368A (ja) * 1988-12-15 1990-06-22 Matsushita Electric Ind Co Ltd スパッタリング装置
DE19705884A1 (de) * 1997-02-15 1998-08-20 Leybold Ag Plasma-Zündvorrichtung
US6402904B1 (en) 2001-03-16 2002-06-11 4 Wave, Inc. System and method for performing sputter deposition using independent ion and electron sources and a target biased with an a-symmetric bi-polar DC pulse signal
US6679976B2 (en) 2001-03-16 2004-01-20 4Wave, Inc. System and method for performing sputter deposition with multiple targets using independent ion and electron sources and independent target biasing with DC pulse signals
US8552632B2 (en) * 2002-03-20 2013-10-08 Copytele, Inc. Active matrix phosphor cold cathode display
US8691064B2 (en) 2007-07-09 2014-04-08 Raytheon Canada Limited Sputter-enhanced evaporative deposition apparatus and method
US9030659B2 (en) 2013-07-23 2015-05-12 Massachusetts Institute Of Technology Spark-induced breakdown spectroscopy electrode assembly

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1760454A (en) * 1922-07-24 1930-05-27 Westinghouse Lamp Co Manufacture of electron-emitting devices and the like
US1821238A (en) * 1927-07-20 1931-09-01 Westinghouse Lamp Co Rectifier
US1894946A (en) * 1929-08-19 1933-01-24 Siemens Ag Method for activating glowing cathodes or the like
BE632434A (enExample) * 1962-06-08
US3348092A (en) * 1965-01-04 1967-10-17 Gen Electric Electron discharge device having a barium dispensing anode structure
DE1251876B (enExample) * 1965-12-23
US3467878A (en) * 1966-06-27 1969-09-16 Gen Electric Electron discharge device with arrangement for replenishing emissive material on a smooth cathode surface
US3507774A (en) * 1967-06-02 1970-04-21 Nat Res Corp Low energy sputtering apparatus for operation below one micron pressure
US3616919A (en) * 1969-03-26 1971-11-02 Precision Valve Corp Water purifier

Also Published As

Publication number Publication date
FR2350687A1 (fr) 1977-12-02
FR2350687B1 (enExample) 1981-12-18
DE2720424A1 (de) 1977-11-24
CA1072913A (en) 1980-03-04
US4046666A (en) 1977-09-06
GB1559430A (en) 1980-01-16
JPS52135995A (en) 1977-11-14

Similar Documents

Publication Publication Date Title
JPS5914218B2 (ja) イオンビ−ム発生装置
US3836451A (en) Arc deposition apparatus
Burdovitsin et al. Fore-vacuum plasma-cathode electron sources
Schwoebel et al. Surface‐science aspects of vacuum microelectronics
US3625848A (en) Arc deposition process and apparatus
Thomas et al. Thermionic sources for high-brightness electron beams
US3875028A (en) Method of manufacture of x-ray tube having focusing cup with non emitting coating
JPH05171423A (ja) 真空蒸着用偏向電子銃装置
KenKnight et al. Sputtering of metals by hydrogen ions
US3494852A (en) Collimated duoplasmatron-powered deposition apparatus
Williams Vacuum coating with a hollow cathode source
Kirschner et al. An evaporation source for ion beam assisted deposition in ultrahigh vacuum
CN110444463B (zh) 一种微电流铯离子源
Mattox Design considerations for ion plating
Gaertner et al. Electron emission model of ba dispenser scandate cathodes based on the beamlet effect
Billen A radio frequency he-source and a source of negative ions by cesium sputtering
US2846609A (en) Non-emissive electrode for electron discharge device
Lopatin et al. Development of a plasma system based on gridless ion acceleration for deposition of aluminum oxide coatings
Gaertner et al. Vacuum electron sources and their materials and technologies
Katz Metal capillary cathodes
JPH06128730A (ja) 金属薄膜の製造方法
JP3186777B2 (ja) プラズマ源
US3027480A (en) Electron discharge device cathodes
Borisenko et al. Nonself-sustained arc discharge in anode material vapors
Lenef et al. Arc spot formation on cold cathodes in high-intensity discharge lamps