FR2350687A1 - Appareil pour produire des faisceaux d'electrons et d'ions de grande intensite - Google Patents

Appareil pour produire des faisceaux d'electrons et d'ions de grande intensite

Info

Publication number
FR2350687A1
FR2350687A1 FR7713952A FR7713952A FR2350687A1 FR 2350687 A1 FR2350687 A1 FR 2350687A1 FR 7713952 A FR7713952 A FR 7713952A FR 7713952 A FR7713952 A FR 7713952A FR 2350687 A1 FR2350687 A1 FR 2350687A1
Authority
FR
France
Prior art keywords
high intensity
producing high
ion beams
intensity electron
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7713952A
Other languages
English (en)
Other versions
FR2350687B1 (fr
Inventor
Edwin Davidson Mcclanahan
Ronald Wilfred Moss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Energy
Energy Research and Development Administration ERDA
Original Assignee
US Department of Energy
Energy Research and Development Administration ERDA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Department of Energy, Energy Research and Development Administration ERDA filed Critical US Department of Energy
Publication of FR2350687A1 publication Critical patent/FR2350687A1/fr
Application granted granted Critical
Publication of FR2350687B1 publication Critical patent/FR2350687B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
FR7713952A 1976-05-07 1977-05-06 Appareil pour produire des faisceaux d'electrons et d'ions de grande intensite Granted FR2350687A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/684,418 US4046666A (en) 1976-05-07 1976-05-07 Device for providing high-intensity ion or electron beam

Publications (2)

Publication Number Publication Date
FR2350687A1 true FR2350687A1 (fr) 1977-12-02
FR2350687B1 FR2350687B1 (fr) 1981-12-18

Family

ID=24747977

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7713952A Granted FR2350687A1 (fr) 1976-05-07 1977-05-06 Appareil pour produire des faisceaux d'electrons et d'ions de grande intensite

Country Status (6)

Country Link
US (1) US4046666A (fr)
JP (1) JPS5914218B2 (fr)
CA (1) CA1072913A (fr)
DE (1) DE2720424A1 (fr)
FR (1) FR2350687A1 (fr)
GB (1) GB1559430A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2494487A1 (fr) * 1980-11-14 1982-05-21 Kreindel July Source d'electrons et d'ions

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346330A (en) * 1980-04-14 1982-08-24 Thermo Electron Corporation Laser generated high electron density source
US4377773A (en) * 1980-12-12 1983-03-22 The United States Of America As Represented By The Department Of Energy Negative ion source with hollow cathode discharge plasma
US4416755A (en) * 1981-04-03 1983-11-22 Xerox Corporation Apparatus and method for producing semiconducting films
JPS60164724A (ja) * 1984-02-07 1985-08-27 Seiko Epson Corp 電気光学装置
US4560462A (en) * 1984-06-22 1985-12-24 Westinghouse Electric Corp. Apparatus for coating nuclear fuel pellets with a burnable absorber
DE3503398A1 (de) * 1985-02-01 1986-08-07 W.C. Heraeus Gmbh, 6450 Hanau Sputteranlage zum reaktiven beschichten eines substrates mit hartstoffen
JPS6258546A (ja) * 1985-09-06 1987-03-14 Ulvac Corp 熱陰極型イオン源
JPH0772349B2 (ja) * 1987-05-12 1995-08-02 住友電気工業株式会社 大面積化合物薄膜の作製方法および装置
US4885070A (en) * 1988-02-12 1989-12-05 Leybold Aktiengesellschaft Method and apparatus for the application of materials
US5798027A (en) * 1988-02-08 1998-08-25 Optical Coating Laboratory, Inc. Process for depositing optical thin films on both planar and non-planar substrates
US5225057A (en) * 1988-02-08 1993-07-06 Optical Coating Laboratory, Inc. Process for depositing optical films on both planar and non-planar substrates
US4851095A (en) * 1988-02-08 1989-07-25 Optical Coating Laboratory, Inc. Magnetron sputtering apparatus and process
US5618388A (en) * 1988-02-08 1997-04-08 Optical Coating Laboratory, Inc. Geometries and configurations for magnetron sputtering apparatus
JPH02163368A (ja) * 1988-12-15 1990-06-22 Matsushita Electric Ind Co Ltd スパッタリング装置
DE19705884A1 (de) * 1997-02-15 1998-08-20 Leybold Ag Plasma-Zündvorrichtung
US6679976B2 (en) 2001-03-16 2004-01-20 4Wave, Inc. System and method for performing sputter deposition with multiple targets using independent ion and electron sources and independent target biasing with DC pulse signals
US6402904B1 (en) 2001-03-16 2002-06-11 4 Wave, Inc. System and method for performing sputter deposition using independent ion and electron sources and a target biased with an a-symmetric bi-polar DC pulse signal
US8552632B2 (en) * 2002-03-20 2013-10-08 Copytele, Inc. Active matrix phosphor cold cathode display
US8691064B2 (en) 2007-07-09 2014-04-08 Raytheon Canada Limited Sputter-enhanced evaporative deposition apparatus and method
US9030659B2 (en) 2013-07-23 2015-05-12 Massachusetts Institute Of Technology Spark-induced breakdown spectroscopy electrode assembly

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1760454A (en) * 1922-07-24 1930-05-27 Westinghouse Lamp Co Manufacture of electron-emitting devices and the like
US1821238A (en) * 1927-07-20 1931-09-01 Westinghouse Lamp Co Rectifier
US3467878A (en) * 1966-06-27 1969-09-16 Gen Electric Electron discharge device with arrangement for replenishing emissive material on a smooth cathode surface

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1894946A (en) * 1929-08-19 1933-01-24 Siemens Ag Method for activating glowing cathodes or the like
BE632434A (fr) * 1962-06-08
US3348092A (en) * 1965-01-04 1967-10-17 Gen Electric Electron discharge device having a barium dispensing anode structure
DE1251876B (fr) * 1965-12-23
US3507774A (en) * 1967-06-02 1970-04-21 Nat Res Corp Low energy sputtering apparatus for operation below one micron pressure
US3616919A (en) * 1969-03-26 1971-11-02 Precision Valve Corp Water purifier

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1760454A (en) * 1922-07-24 1930-05-27 Westinghouse Lamp Co Manufacture of electron-emitting devices and the like
US1821238A (en) * 1927-07-20 1931-09-01 Westinghouse Lamp Co Rectifier
US3467878A (en) * 1966-06-27 1969-09-16 Gen Electric Electron discharge device with arrangement for replenishing emissive material on a smooth cathode surface

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2494487A1 (fr) * 1980-11-14 1982-05-21 Kreindel July Source d'electrons et d'ions

Also Published As

Publication number Publication date
CA1072913A (fr) 1980-03-04
JPS52135995A (en) 1977-11-14
JPS5914218B2 (ja) 1984-04-03
US4046666A (en) 1977-09-06
FR2350687B1 (fr) 1981-12-18
DE2720424A1 (de) 1977-11-24
GB1559430A (en) 1980-01-16

Similar Documents

Publication Publication Date Title
FR2350687A1 (fr) Appareil pour produire des faisceaux d'electrons et d'ions de grande intensite
FR2348562A1 (fr) Source d'ions
JPS57113539A (en) High temperature multipole plasma ion beam source
DE2862123D1 (en) Electron beam exposure apparatus
IL48887A0 (en) Grid controlled electron source and its manufacture
GB2030356B (en) Cold cathode ion source
JPS5463681A (en) Electron beam exposure device
IT1074004B (it) Apparecchiatura per l'impiantamento di ioni
JPS559395A (en) Large power electron beam gyro device
GB1557799A (en) Flat electron beam addressed device
JPS5246384A (en) Vacuum evaporation apparatus employing electron beam
FR2345719A1 (fr) Procede et appareil de spectroscopie par diffusion d'ions
EP0031579A3 (en) Electron beam apparatus
BE837244A (fr) Detecteur d'ions
FR2518804B1 (fr) Source d'ions a forte intensite
DE3063103D1 (en) Electron beam exposure method
DE3062881D1 (en) Electron beam irradiation apparatus
DE2964232D1 (en) Electron beam investigation process and electron impact spectrometer therefor
DD157840A5 (de) Vorrichtung zum beeinflussen von elektronenstrahlen
JPS53121574A (en) Electron beam exposing device
JPS526462A (en) Particle beam microscope
JPS54122979A (en) Electron beam exposure device
IL48720A0 (en) An electron beam vapor source
JPS5246300A (en) Ionic source
GB2032684B (en) Electron beam aperture device

Legal Events

Date Code Title Description
ST Notification of lapse