JPS59139663A - 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線 - Google Patents

半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線

Info

Publication number
JPS59139663A
JPS59139663A JP58014169A JP1416983A JPS59139663A JP S59139663 A JPS59139663 A JP S59139663A JP 58014169 A JP58014169 A JP 58014169A JP 1416983 A JP1416983 A JP 1416983A JP S59139663 A JPS59139663 A JP S59139663A
Authority
JP
Japan
Prior art keywords
wire
strength
high temperature
alloy fine
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58014169A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0211014B2 (enExample
Inventor
Akira Kiyono
清野　晄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP58014169A priority Critical patent/JPS59139663A/ja
Publication of JPS59139663A publication Critical patent/JPS59139663A/ja
Publication of JPH0211014B2 publication Critical patent/JPH0211014B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H10W72/075—
    • H10W72/50—
    • H10W72/5522—
    • H10W72/5525—
    • H10W72/59—
    • H10W72/952—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)
JP58014169A 1983-01-31 1983-01-31 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線 Granted JPS59139663A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58014169A JPS59139663A (ja) 1983-01-31 1983-01-31 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58014169A JPS59139663A (ja) 1983-01-31 1983-01-31 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線

Publications (2)

Publication Number Publication Date
JPS59139663A true JPS59139663A (ja) 1984-08-10
JPH0211014B2 JPH0211014B2 (enExample) 1990-03-12

Family

ID=11853636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58014169A Granted JPS59139663A (ja) 1983-01-31 1983-01-31 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線

Country Status (1)

Country Link
JP (1) JPS59139663A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6120693A (ja) * 1984-07-06 1986-01-29 Toshiba Corp ボンデイングワイヤ−
JPS6280241A (ja) * 1985-10-01 1987-04-13 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
US5000779A (en) * 1988-05-18 1991-03-19 Leach & Garner Palladium based powder-metal alloys and method for making same
WO2010150814A1 (ja) 2009-06-24 2010-12-29 新日鉄マテリアルズ株式会社 半導体用銅合金ボンディングワイヤ
JP2011001605A (ja) * 2009-06-18 2011-01-06 Seki:Kk 高純度パラジウム製品、及びその鋳造方法
US20140209215A1 (en) * 2013-01-29 2014-07-31 Tung-Han Chuang Copper-based alloy wire and methods for manufaturing the same
WO2016022068A1 (en) * 2014-08-04 2016-02-11 Heraeus Deutschland GmbH & Co. KG Ball-bond arrangement
JP2016211055A (ja) * 2015-05-12 2016-12-15 株式会社豊田中央研究所 接合電極、半導体素子及び電子部品
CN109777993A (zh) * 2019-02-26 2019-05-21 昆山全亚冠环保科技有限公司 一种铜金合金轧制工艺

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6120693A (ja) * 1984-07-06 1986-01-29 Toshiba Corp ボンデイングワイヤ−
JPS6280241A (ja) * 1985-10-01 1987-04-13 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
US5000779A (en) * 1988-05-18 1991-03-19 Leach & Garner Palladium based powder-metal alloys and method for making same
JP2011001605A (ja) * 2009-06-18 2011-01-06 Seki:Kk 高純度パラジウム製品、及びその鋳造方法
EP2447380A4 (en) * 2009-06-24 2012-12-05 Nippon Steel Materials Co Ltd CONNECTING WIRE FROM A COPPER ALLOY FOR SEMICONDUCTORS
KR20120031005A (ko) 2009-06-24 2012-03-29 신닛테츠 마테리알즈 가부시키가이샤 반도체용 구리 합금 본딩 와이어
US20120094121A1 (en) * 2009-06-24 2012-04-19 Nippon Micrometal Corporation Copper alloy bonding wire for semiconductor
JP2012084878A (ja) * 2009-06-24 2012-04-26 Nippon Steel Materials Co Ltd 半導体用銅合金ボンディングワイヤ
WO2010150814A1 (ja) 2009-06-24 2010-12-29 新日鉄マテリアルズ株式会社 半導体用銅合金ボンディングワイヤ
US9427830B2 (en) 2009-06-24 2016-08-30 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor
US20140209215A1 (en) * 2013-01-29 2014-07-31 Tung-Han Chuang Copper-based alloy wire and methods for manufaturing the same
US9997488B2 (en) * 2013-01-29 2018-06-12 Tung-Han Chuang Copper-based alloy wire and methods for manufaturing the same
WO2016022068A1 (en) * 2014-08-04 2016-02-11 Heraeus Deutschland GmbH & Co. KG Ball-bond arrangement
CN106663668A (zh) * 2014-08-04 2017-05-10 贺利氏德国有限两合公司 球形键合结合体
JP2016211055A (ja) * 2015-05-12 2016-12-15 株式会社豊田中央研究所 接合電極、半導体素子及び電子部品
CN109777993A (zh) * 2019-02-26 2019-05-21 昆山全亚冠环保科技有限公司 一种铜金合金轧制工艺
CN109777993B (zh) * 2019-02-26 2021-03-16 昆山全亚冠环保科技有限公司 一种铜金合金轧制工艺

Also Published As

Publication number Publication date
JPH0211014B2 (enExample) 1990-03-12

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