JPS59129445A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS59129445A
JPS59129445A JP58003310A JP331083A JPS59129445A JP S59129445 A JPS59129445 A JP S59129445A JP 58003310 A JP58003310 A JP 58003310A JP 331083 A JP331083 A JP 331083A JP S59129445 A JPS59129445 A JP S59129445A
Authority
JP
Japan
Prior art keywords
package body
semiconductor chip
lid
main body
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58003310A
Other languages
Japanese (ja)
Inventor
Katsuhiko Akiyama
秋山　克彦
Hideyuki Takahashi
秀幸 高橋
Tetsuo Ono
小野　鉄雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP58003310A priority Critical patent/JPS59129445A/en
Publication of JPS59129445A publication Critical patent/JPS59129445A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/163—Connection portion, e.g. seal

Abstract

PURPOSE:To contrive improvement in production efficiency without giving effect on a chip and a wire connection by a method wherein a semiconductor chip is stored in the package main body of thermoplastic resin, heated up to the resin- fusing temperature or below and the above is supersonic-welded with the cover. CONSTITUTION:A junction part 3 is provided on an apertre face 1a of the package main body of thermoplastic resin, a semiconductor chip 2 is installed, a preheating is performed after a cover 6 of the same material as the main body 1 is placed thereon, and the above is maintained at the resin fusing temperature or below. After the above has been softened, the cover 6 and the junction part 3 are welded by pressing a supersonic horn, and a device 11 is completed. According to this constitution, as the main body 1 is softened by heating, the oscillation energy of the horn 8 is absorbed, the damage which will be given to the chip 2 and the wire 5 can be prevented, a highly reliable device can be obtained, and a welding work can be performed instantaneously, thereby enabling to increase the production efficiency remarkably.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、パッケージに封入されてなる半導体装置の製
造方法に関し、特に、パッケージ本体と蓋体を簡単ζこ
接着することが可能な半導体装置の製造方法に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device enclosed in a package, and particularly to a semiconductor device in which a package body and a lid can be easily bonded together. Relating to a manufacturing method.

〔背景技術とその問題点〕[Background technology and its problems]

半導体集積回路は、その内部素子やワイヤへの外部から
の衝撃及び塵埃、湿度等の雰囲気を遮断したり、プリン
ト基板への取付は等に関する扱いやすさのためにパッケ
ージに封入して用いられている。Semiconductor integrated circuits are used enclosed in packages to protect internal elements and wires from external shocks and atmospheres such as dust and humidity, and to facilitate handling when mounting on printed circuit boards. There is.

すなわち、従来から例えば第１図に示すように、セラミ
ック等により形成されるパッケージ本体１０１内に各種
集積回路を形成した半導体チップ１０２を収納し、この
半導体チップ１０２と外部接続用のリード１０３間にワ
イヤポンディングを施して直径２５μｍ程度の細い金線
等からなるワイヤ１０４を設けて接続導通を図り、これ
ら半導体チップ１０２やワイヤ１０４を保護するために
蓋体１０５により閉成して封入した半導体装置が知られ
ている。That is, conventionally, for example, as shown in FIG. 1, a semiconductor chip 102 on which various integrated circuits are formed is housed in a package body 101 made of ceramic or the like, and a lead 103 for external connection is placed between the semiconductor chip 102 and external connection leads 103. A semiconductor device which is wire bonded and provided with a wire 104 made of a thin gold wire or the like with a diameter of about 25 μm for connection and conduction, and which is closed and enclosed with a lid 105 to protect the semiconductor chip 102 and wires 104. It has been known.

ところで、この種の半導体装置においては、パッケージ
本体”１０１や蓋体１０５の材質が問題となり、特に上
述のようにセラミック等を用いたものにあっては、材料
そのものが高価であるとともに、加工が困難で生産性が
あまり良くないという欠点が生じている。さらに、上記
セラミック等により形成されるパッケージ本体１０１と
蓋体１０５を接合するためには、低融点ガラスやある種
の合金である低融点ろう等の封着手段１０６で封着する
必要があり、非常に高温で処理するために内部に収納さ
れる半導体チップ１０２等に悪影響を及ぼす虞れもある
。By the way, in this type of semiconductor device, the material of the package body "101" and the lid body 105 poses a problem. Especially in the case of a device using ceramic etc. as mentioned above, the material itself is expensive and processing is difficult. Furthermore, in order to bond the package body 101 and the lid body 105 made of ceramic or the like, it is necessary to use a low melting point glass or a certain type of alloy. It is necessary to seal with a sealing means 106 such as wax, and since the process is performed at a very high temperature, there is a possibility that the semiconductor chip 102 etc. housed inside may be adversely affected.

そこで、さらに従来は、上記半導体装置の製造コストを
低減するために、パッケージ本体や蓋体を安価で加工の
容易な合成樹脂により形成したものが知られている。Therefore, in order to reduce the manufacturing cost of the semiconductor device, it has been known that the package body and lid are made of inexpensive and easily processable synthetic resin.

しかしながら、このように合成樹脂を用いたものにおい
て、パッケージ本体と蓋体とを封着するためには、例え
ば封着手段としてエポキシ系接着剤や感圧接着剤等の接
着剤を用いて接着するという方法が用いられている。こ
のため、製造工程が繁雑なものとなるとともに、接着剤
が乾燥するまでに時間がかかり、生産効率を著しく低減
している。However, in order to seal the package body and the lid in such a case using synthetic resin, it is necessary to use an adhesive such as an epoxy adhesive or a pressure-sensitive adhesive as a sealing means. This method is used. For this reason, the manufacturing process becomes complicated, and it takes time for the adhesive to dry, which significantly reduces production efficiency.

そこで、さらに従来は、上述のように合成樹脂により形
成されるパッケージ本体と蓋体を超音波溶着により瞬時
に封着する方法が提案されている。Therefore, conventionally, a method has been proposed for instantaneously sealing the package body and the lid made of synthetic resin as described above by ultrasonic welding.

しかしながら、上記ワイヤポンディングｔＪＡｉした半
導体チップを収納したパッケージ本体に超音波を伝達す
る古、振動により上記ワイヤや半導体チップに損傷を与
える虞れがあり実用に供するには至らないでいる。However, in the case of transmitting ultrasonic waves to a package body containing a semiconductor chip subjected to wire bonding, there is a risk of damage to the wire or the semiconductor chip due to vibration, and this method has not been put to practical use.

〔発明の目的〕[Purpose of the invention]

そこで、本発明は上述の従来の方法の有する欠点を解消
するために提案されたものであり、生産効率を著しく向
上するとともに製造コストを大幅に低減することが可能
な半導体装置の製造方法を提供することを目的とする。Therefore, the present invention was proposed in order to eliminate the drawbacks of the above-mentioned conventional methods, and provides a method for manufacturing a semiconductor device that can significantly improve production efficiency and significantly reduce manufacturing costs. The purpose is to

さらに本発明は、パッケージ内部に収納される半導体チ
ップやこの半導体チップに接続される微細なワイヤ等に
悪影響を及ぼすことのないような半導体装置の製造方法
を提供することを目的とする。A further object of the present invention is to provide a method for manufacturing a semiconductor device that does not adversely affect the semiconductor chip housed inside the package or the minute wires connected to the semiconductor chip.

〔発明の概要〕[Summary of the invention]

上述の目的を達成するために、本発明は、半導体チップ
を熱可塑性樹脂にて形成されるパッケージ本体に収納す
る工程と、上記パッケージ本体の開口部に該開口部を閉
塞する蓋体を載置する工程と、上記パッケージ本体をあ
らかじめこのパッケージ本体を形成する樹脂の溶融温度
以下に加熱する工程と、上記パッケージ本体と蓋体とを
超音波溶着する工程とを有することを特徴とするもので
ある。In order to achieve the above object, the present invention includes a step of housing a semiconductor chip in a package body made of thermoplastic resin, and placing a lid body in an opening of the package body to close the opening. The method is characterized by comprising the steps of: heating the package body in advance to a temperature below the melting temperature of the resin forming the package body; and ultrasonically welding the package body and the lid. .

〔実施例〕〔Example〕

以下、本発明の具体的な実施例について図面に従って詳
細に説明する。Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings.

第２図Ａ−Ｄは、本発明による半導体装置の製造工程の
工程順序を示す縦断面図であり、先ず第２図Ａに示すよ
うに熱可塑性樹脂により形成されるパッケージ本体１内
に集積回路を形成した半導体チップ２を収納する。この
パッケージ本体１は、例えばポリフェニレンサルファイ
ドのような熱可塑性樹脂により開口部１ｂを有して略筺
体状に形成され、その開口面１ａには周囲に亘って連続
的に膨出形成される接合部３が設けられている。また、
このパッケージ本体１には上記半導体チップ２と外部回
路との導通を図るために導電金属製のり一ド４が複数本
貫通して設けられている。そして、上記半導体チップ２
とリード４間には所謂ワイヤボンティングが施され、直
径２５μｍ程度の金線等よりなるワイヤ５によって接続
導通が図られている。さらに、上記パッケージ本体１の
接合部３上には、このパッケージ本体１と同様に熱可塑
性樹脂により形成される蓋体６が載置されている。FIGS. 2A to 2D are vertical cross-sectional views showing the sequence of manufacturing steps of a semiconductor device according to the present invention. First, as shown in FIG. The semiconductor chip 2 formed thereon is housed. The package body 1 is formed of a thermoplastic resin such as polyphenylene sulfide into a substantially housing shape with an opening 1b, and a joint portion formed in a continuous bulge over the periphery of the opening 1a. 3 is provided. Also,
A plurality of conductive metal glues 4 are provided through the package body 1 in order to establish electrical continuity between the semiconductor chip 2 and an external circuit. Then, the semiconductor chip 2
So-called wire bonding is performed between the lead 4 and the lead 4, and electrical connection is achieved using a wire 5 made of a gold wire or the like having a diameter of about 25 μm. Further, on the joint portion 3 of the package body 1, a lid body 6 made of thermoplastic resin, like the package body 1, is placed.

このように、半導体チップ２を収納したパッケージ本体
１及び蓋体６は、次に第２図Ｂに示すように予熱ヒーグ
７上に載置され、あらかじめ上記パッケージ本体１及び
蓋体６を形成する熱可塑性樹脂の溶融温度以下に加熱し
ておく。例えば、パッケージ本体１及び蓋体６をポリフ
ェニレンサルファイドで形成した場合には、このポリフ
ェニレンサルファイドの溶融温度が約２９０℃であるの
でこれ以下であればよく、好ましくは１４０℃〜２００
℃程度に加熱しておけば充分に後述する効果を得ること
ができる。また、上記予熱ヒーグ７としでは、例えば電
熱ヒータや赤外線ヒータ、電子線加熱等を用いる。In this way, the package body 1 and the lid 6 containing the semiconductor chip 2 are then placed on the preheating heater 7 as shown in FIG. 2B to form the package body 1 and the lid 6 in advance. Heat to below the melting temperature of the thermoplastic resin. For example, when the package body 1 and the lid 6 are made of polyphenylene sulfide, the melting temperature of this polyphenylene sulfide is about 290°C, so the melting temperature may be lower than this, preferably 140°C to 200°C.
If it is heated to about 0.degree. C., the effects described below can be sufficiently obtained. Further, as the preheating heater 7, for example, an electric heater, an infrared heater, an electron beam heating, or the like is used.

さらに、上述のように予熱ヒータ７により加熱され軟化
したパッケージ本体１及び蓋体６上に、第２図Ｃに示す
ように超音波振動を行なう振動子である所謂超音波ホー
ン８を押付けて配置する。Furthermore, as shown in FIG. 2C, a so-called ultrasonic horn 8, which is a vibrator that performs ultrasonic vibration, is pressed and placed on the package body 1 and lid 6, which have been heated and softened by the preheater 7 as described above. do.

そして、この超音波ホーン８より２０ｋＨ２程度の振動
を上記蓋体６及びパッケージ本体１に伝達することによ
り、これら蓋体６とパッケージ本体１の接合部３が激し
くぶつかり合い、発生する熱で上記蓋体６と接合部３が
溶融し、第２図りに示すように溶着され、半導体装置１
１が形成される。By transmitting vibrations of about 20 kHz from the ultrasonic horn 8 to the lid 6 and the package body 1, the joint 3 of the lid 6 and the package body 1 collide violently, and the heat generated causes the lid to The body 6 and the joint part 3 are melted and welded as shown in the second diagram, and the semiconductor device 1 is formed.
1 is formed.

このとき、上記接合部３がパッケージ本体１の開口面１
ａの全周に亘って連続的に設けられているので、上記パ
ッケージ本体１は蓋体６によって完全に密閉されて封着
される。また、この超音波ホーン８の振動伝達による溶
着は、瞬時に、例えば１秒程度で行なわれ、製造工程を
時間的に大幅に短縮することができ、生産効率を著しく
向上することが可能となっている。さらにまた、上記パ
ッケージ本体１や蓋体６は、あらかじめ予熱ヒータ７に
より加熱され軟化しているので、上記超音波ホーン８か
ら伝達される振動をその塑性変形により吸収し、パッケ
ージ本体１内に収納される半導体チップ２やワイヤ５に
上記振動が伝達することがなく、シたがってこれら半導
体チップ２やワイヤ５に損傷を与えることがほとんどな
くなっている。At this time, the joint portion 3 is connected to the opening surface 1 of the package body 1.
Since the package body 1 is provided continuously over the entire circumference of the cover 6, the package body 1 is completely hermetically sealed by the cover body 6. In addition, welding by the vibration transmission of the ultrasonic horn 8 is performed instantaneously, for example, in about one second, making it possible to significantly shorten the manufacturing process and significantly improve production efficiency. ing. Furthermore, since the package body 1 and the lid 6 are heated and softened by the preheater 7 in advance, they absorb the vibrations transmitted from the ultrasonic horn 8 through their plastic deformation, and are stored in the package body 1. The vibrations are not transmitted to the semiconductor chip 2 and the wires 5, and therefore, there is almost no damage to the semiconductor chips 2 and the wires 5.

このように上記実施例においては、熱可塑性樹脂により
形成されるパッケージ本体１と蓋体６とを予熱ヒータ７
を用いてあらかじめ加熱することにより、従来不可能で
あった超音波溶着により上記パッケージ本体１と蓋体６
を封着することが可能となり、封着作業に要する時間を
大幅に短縮して生産効率を著しく向上することが可能と
なっている。In this way, in the above embodiment, the package body 1 and the lid body 6 made of thermoplastic resin are heated by the preheater 7.
By heating in advance using
This makes it possible to significantly reduce the time required for sealing work and significantly improve production efficiency.

さらに、上記実施例においては、パッケージ本体１の加
熱による軟化のために、超音波ホーン８から伝達される
振動エネルギーを吸収して、収納される半導体チップ２
やワイヤ５に損傷を与えることがなくなり、信頼性の高
い半導体装置１１を得ることが可能となっている。Furthermore, in the above embodiment, the package body 1 is softened by heating, so that the semiconductor chip 2 accommodated absorbs the vibration energy transmitted from the ultrasonic horn 8.
This eliminates damage to the wires 5 and wires 5, making it possible to obtain a highly reliable semiconductor device 11.

さらにまた、上記実施例においては、パッケージ本体１
や蓋体６の封着のために接着剤等を用いる必要がなく、
また、上記パッケージ本体１や蓋体６の材料として低価
格な熱可塑性樹脂が用いられているために、製造コスト
を大幅に低減することが可能となっている。Furthermore, in the above embodiment, the package body 1
There is no need to use adhesive or the like to seal the lid body 6.
Furthermore, since a low-cost thermoplastic resin is used as the material for the package body 1 and the lid 6, manufacturing costs can be significantly reduced.

なお、本発明は上記実施例に限定されるものではなく、
例えばパッケージ本体１に設けられる接合部３の形状は
任意のものでよく、あるいは無くともよい。Note that the present invention is not limited to the above embodiments,
For example, the shape of the joint 3 provided in the package body 1 may be arbitrary, or may be omitted.

また、パッケージ本体１に補助的にワイヤ５の損傷低下
のためにインナーコートの被覆ヲ施シ、耐湿性を向上す
るものに適用することも可能である。It is also possible to apply an inner coat to the package body 1 to reduce damage to the wire 5 and to improve moisture resistance.

〔発明の効果〕〔Effect of the invention〕

上述の実施例の説明からも明らかなように、本発明によ
れば半導体装置の生産効率を著しく向上することが可能
となるとともに、製造コストを太幅に低減することが可
能となっている。As is clear from the description of the above-mentioned embodiments, according to the present invention, it is possible to significantly improve the production efficiency of semiconductor devices, and it is also possible to significantly reduce manufacturing costs.

さらに本発明によれば、パッケージ内部に収納される半
導体チップやこの半導体チップに接続される微細なワイ
ヤ等に悪影響を及ぼすことがなく、信頼性の高い半導体
装置を得ることが可能となっている。Further, according to the present invention, it is possible to obtain a highly reliable semiconductor device without adversely affecting the semiconductor chip housed inside the package or the fine wires connected to the semiconductor chip. .

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来の方法により形成される半導体装置の縦断
面図である。 第２図Ａ−１）は、本発明による製造工程の工程を示す
縦断面図、第２図Ｃは超音波溶着工程を示す縦断面図、
第２図りは完成した半導体装置を示す縦断面図である。 １・・・・・・・・・パッケージ本体 ２・・・・・・・・・半導体チップ ６・・・・・・・・・蓋体 ７・・・・・・・・・予熱ヒータ ８・・・・・・・・・超音波ホーン 第１図 第２図（Ａ） 第２図（Ｂ） ７　　　　　を 第２図（（）FIG. 1 is a longitudinal sectional view of a semiconductor device formed by a conventional method. FIG. 2A-1) is a longitudinal sectional view showing the steps of the manufacturing process according to the present invention, FIG. 2C is a longitudinal sectional view showing the ultrasonic welding process,
The second drawing is a longitudinal sectional view showing the completed semiconductor device. 1...Package body 2...Semiconductor chip 6...Lid body 7...Preheater 8. ......Ultrasonic horn Fig. 1 Fig. 2 (A) Fig. 2 (B) 7 Fig. 2 (()

Claims (1)

【特許請求の範囲】[Claims] 半導体チップを熱可塑性樹脂にて形成されるパッケージ
本体に収納する工程と、上記パッケージ本体の開口部に
該開口部を閉塞する蓋体を載置する工程と、上記パッケ
ージ本体をあらかじめこのパッケージ本体を形成する樹
脂の溶融温度以下に加熱する工程と、上記パッケージ本
体と蓋体とを超音波溶着する工程とを有することを特徴
とする半導体装置の製造方法。A step of housing the semiconductor chip in a package body made of thermoplastic resin, a step of placing a lid body to close the opening in the opening of the package body, and a step of placing the package body in advance. A method for manufacturing a semiconductor device, comprising the steps of: heating the package body to a temperature below the melting temperature of the resin to be formed; and ultrasonically welding the package body and the lid.
JP58003310A 1983-01-14 1983-01-14 Manufacture of semiconductor device Pending JPS59129445A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58003310A JPS59129445A (en) 1983-01-14 1983-01-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58003310A JPS59129445A (en) 1983-01-14 1983-01-14 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS59129445A true JPS59129445A (en) 1984-07-25

Family

ID=11553780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58003310A Pending JPS59129445A (en) 1983-01-14 1983-01-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS59129445A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01198052A (en) * 1988-02-03 1989-08-09 Nec Corp Semiconductor device and manufacture thereof
JPH10261847A (en) * 1997-03-19 1998-09-29 Matsushita Electric Ind Co Ltd Radiating substrate for mounting electronic component
EP0928022A2 (en) * 1997-12-18 1999-07-07 TDK Corporation Resin package fabrication process
JP2014067971A (en) * 2012-09-27 2014-04-17 Mitsubishi Materials Corp Substrate for power module
CN106298685A (en) * 2016-09-29 2017-01-04 中国船舶重工集团公司第七〇九研究所 A kind of electronic chip packaging structure using ultrasonic bonding

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01198052A (en) * 1988-02-03 1989-08-09 Nec Corp Semiconductor device and manufacture thereof
JPH10261847A (en) * 1997-03-19 1998-09-29 Matsushita Electric Ind Co Ltd Radiating substrate for mounting electronic component
EP0928022A2 (en) * 1997-12-18 1999-07-07 TDK Corporation Resin package fabrication process
EP0928022A3 (en) * 1997-12-18 1999-12-15 TDK Corporation Resin package fabrication process
US6282781B1 (en) 1997-12-18 2001-09-04 Tdk Corporation Resin package fabrication process
JP2014067971A (en) * 2012-09-27 2014-04-17 Mitsubishi Materials Corp Substrate for power module
CN106298685A (en) * 2016-09-29 2017-01-04 中国船舶重工集团公司第七〇九研究所 A kind of electronic chip packaging structure using ultrasonic bonding

Similar Documents

Publication Publication Date Title
JP2647194B2 (en) Semiconductor package sealing method
EP0498198B1 (en) Hermetic device package for microelectronic frequency selection components
JPH08148603A (en) Ball grid array type semiconductor device and manufacture thereof
JPS59129445A (en) Manufacture of semiconductor device
JP2982971B2 (en) Post mold cavity package for integrated circuits with internal dam bar
JPH04107955A (en) Sealing method of electronic circuit element
JPH06241889A (en) Semiconductor device
JPS6313337A (en) Process of mounting semiconductor element
JPH01225140A (en) Manufacture of semiconductor device
KR100214857B1 (en) Multi-chip package
JPH0366152A (en) Semiconductor integrated circuit module
JPS6120772Y2 (en)
JPH0455332B2 (en)
JPS5889847A (en) Sealing type integrated circuit package
JPS6222456B2 (en)
JPH06132759A (en) Manufacture of electronic parts device
JPH01101655A (en) Semiconductor device package
JPS6237949A (en) Electronic-part mounting package
JPH01198052A (en) Semiconductor device and manufacture thereof
JPH04240739A (en) Bonder
JPH0220045A (en) Semiconductor device and packaging method thereof
JPH0750750B2 (en) Electronic component mounting package
JPS62120053A (en) Manufacture of resin-sealed semiconductor device
JPH03236249A (en) Semiconductor chip module
JPH06232208A (en) Method for sealing semiconductor device, and sealing structure