JPS59127884A - 画像変換素子 - Google Patents

画像変換素子

Info

Publication number
JPS59127884A
JPS59127884A JP58003682A JP368283A JPS59127884A JP S59127884 A JPS59127884 A JP S59127884A JP 58003682 A JP58003682 A JP 58003682A JP 368283 A JP368283 A JP 368283A JP S59127884 A JPS59127884 A JP S59127884A
Authority
JP
Japan
Prior art keywords
light
conversion element
coherent
incoherent
image conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58003682A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0211124B2 (enrdf_load_stackoverflow
Inventor
Yoshiya Takeda
悦矢 武田
Shinji Fujiwara
慎司 藤原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58003682A priority Critical patent/JPS59127884A/ja
Publication of JPS59127884A publication Critical patent/JPS59127884A/ja
Publication of JPH0211124B2 publication Critical patent/JPH0211124B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/16—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive semiconductor devices have no potential barriers
    • H10F55/165—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive semiconductor devices have no potential barriers wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP58003682A 1983-01-12 1983-01-12 画像変換素子 Granted JPS59127884A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58003682A JPS59127884A (ja) 1983-01-12 1983-01-12 画像変換素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58003682A JPS59127884A (ja) 1983-01-12 1983-01-12 画像変換素子

Publications (2)

Publication Number Publication Date
JPS59127884A true JPS59127884A (ja) 1984-07-23
JPH0211124B2 JPH0211124B2 (enrdf_load_stackoverflow) 1990-03-13

Family

ID=11564168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58003682A Granted JPS59127884A (ja) 1983-01-12 1983-01-12 画像変換素子

Country Status (1)

Country Link
JP (1) JPS59127884A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4789500A (en) * 1985-03-28 1988-12-06 Futaba Denshi Kogyo Kabushiki Kaisha Optical control element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4789500A (en) * 1985-03-28 1988-12-06 Futaba Denshi Kogyo Kabushiki Kaisha Optical control element

Also Published As

Publication number Publication date
JPH0211124B2 (enrdf_load_stackoverflow) 1990-03-13

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