JPS59127287A - 不揮発性メモリ装置 - Google Patents

不揮発性メモリ装置

Info

Publication number
JPS59127287A
JPS59127287A JP57228700A JP22870082A JPS59127287A JP S59127287 A JPS59127287 A JP S59127287A JP 57228700 A JP57228700 A JP 57228700A JP 22870082 A JP22870082 A JP 22870082A JP S59127287 A JPS59127287 A JP S59127287A
Authority
JP
Japan
Prior art keywords
magnetic
magnetic element
writing
magnetic field
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57228700A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6118279B2 (enExample
Inventor
Yoshio Sato
良夫 佐藤
Yuji Furumura
雄二 古村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57228700A priority Critical patent/JPS59127287A/ja
Publication of JPS59127287A publication Critical patent/JPS59127287A/ja
Publication of JPS6118279B2 publication Critical patent/JPS6118279B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Non-Volatile Memory (AREA)
JP57228700A 1982-12-28 1982-12-28 不揮発性メモリ装置 Granted JPS59127287A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57228700A JPS59127287A (ja) 1982-12-28 1982-12-28 不揮発性メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57228700A JPS59127287A (ja) 1982-12-28 1982-12-28 不揮発性メモリ装置

Publications (2)

Publication Number Publication Date
JPS59127287A true JPS59127287A (ja) 1984-07-23
JPS6118279B2 JPS6118279B2 (enExample) 1986-05-12

Family

ID=16880426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57228700A Granted JPS59127287A (ja) 1982-12-28 1982-12-28 不揮発性メモリ装置

Country Status (1)

Country Link
JP (1) JPS59127287A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11110961A (ja) * 1997-10-02 1999-04-23 Canon Inc 磁気薄膜メモリ
JP2008227529A (ja) * 1996-05-06 2008-09-25 Seagate Technology Internatl ホール効果装置及びその動作方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008227529A (ja) * 1996-05-06 2008-09-25 Seagate Technology Internatl ホール効果装置及びその動作方法
JPH11110961A (ja) * 1997-10-02 1999-04-23 Canon Inc 磁気薄膜メモリ

Also Published As

Publication number Publication date
JPS6118279B2 (enExample) 1986-05-12

Similar Documents

Publication Publication Date Title
KR100443545B1 (ko) Ｍｒａｍ 장치
US7212432B2 (en) Resistive memory cell random access memory device and method of fabrication
US7995402B2 (en) Method for erasing a semiconductor magnetic memory integrating a magnetic tunneling junction above a floating-gate memory cell
KR100971059B1 (ko) 반도체 기억 장치
US5838609A (en) Integrated semiconductor device having negative resistance formed of MIS switching diode
EP1575055B1 (en) Cmis semiconductor nonvolatile storage circuit
TWI239632B (en) Semiconductor memory device
WO2001069602A2 (en) Ferroelectric memory and method of operating same
JPH0745794A (ja) 強誘電体メモリの駆動方法
US6614682B2 (en) Magnetic material memory and information reproducing method of the same
US4803658A (en) Cross tie random access memory
US7710759B2 (en) Nonvolatile ferroelectric memory device
US7019370B2 (en) Method for manufacturing magnetic random access memory
JPS59127287A (ja) 不揮発性メモリ装置
JP3878370B2 (ja) 不揮発性メモリおよびその駆動方法
JP3067200B2 (ja) 半導体記憶装置
JP4124844B2 (ja) 磁気薄膜メモリ
KR100682180B1 (ko) 불휘발성 강유전체 메모리 장치
JPWO2003052828A1 (ja) 半導体装置
US7449760B2 (en) Magnetoresistive element, magnetic memory cell, and magnetic memory device
JP2002334573A (ja) 磁気メモリ及びその書き込み方法
GB2148635A (en) Integrated circuit memories
JPS5955059A (ja) 不揮発性ランダムアクセスメモリ装置
JPS5918795B2 (ja) 半導体記憶装置
JPS6166287A (ja) 磁気バブルメモリ装置