JPS59126778A - プラズマエツチング方法及びその装置 - Google Patents
プラズマエツチング方法及びその装置Info
- Publication number
- JPS59126778A JPS59126778A JP179283A JP179283A JPS59126778A JP S59126778 A JPS59126778 A JP S59126778A JP 179283 A JP179283 A JP 179283A JP 179283 A JP179283 A JP 179283A JP S59126778 A JPS59126778 A JP S59126778A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- flat plate
- etching
- plasma etching
- upper electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001020 plasma etching Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims description 9
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000000919 ceramic Substances 0.000 claims abstract description 5
- 239000011148 porous material Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 abstract description 21
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000007789 gas Substances 0.000 description 6
- 238000010849 ion bombardment Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- -1 for example Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000009852 Cucurbita pepo Nutrition 0.000 description 1
- 241000219104 Cucurbitaceae Species 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP179283A JPS59126778A (ja) | 1983-01-11 | 1983-01-11 | プラズマエツチング方法及びその装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP179283A JPS59126778A (ja) | 1983-01-11 | 1983-01-11 | プラズマエツチング方法及びその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59126778A true JPS59126778A (ja) | 1984-07-21 |
| JPH0250197B2 JPH0250197B2 (cs) | 1990-11-01 |
Family
ID=11511424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP179283A Granted JPS59126778A (ja) | 1983-01-11 | 1983-01-11 | プラズマエツチング方法及びその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59126778A (cs) |
Cited By (98)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164433A (ja) * | 1986-12-26 | 1988-07-07 | Matsushita Electric Ind Co Ltd | ドライエツチング装置 |
| US5156703A (en) * | 1987-03-18 | 1992-10-20 | Hans Oechsner | Mthod for the surface treatment of semiconductors by particle bombardment |
| DE10340751B4 (de) * | 2002-08-28 | 2010-07-29 | Kyocera Corp. | Trockenätzvorrichtung, Trockenätzverfahren sowie dabei verwendete Platte |
| KR20140024316A (ko) * | 2011-03-14 | 2014-02-28 | 어플라이드 머티어리얼스, 인코포레이티드 | Ｓｉｎ 필름들의 에칭을 위한 방법들 |
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-
1983
- 1983-01-11 JP JP179283A patent/JPS59126778A/ja active Granted
Cited By (137)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164433A (ja) * | 1986-12-26 | 1988-07-07 | Matsushita Electric Ind Co Ltd | ドライエツチング装置 |
| US5156703A (en) * | 1987-03-18 | 1992-10-20 | Hans Oechsner | Mthod for the surface treatment of semiconductors by particle bombardment |
| DE10340751B4 (de) * | 2002-08-28 | 2010-07-29 | Kyocera Corp. | Trockenätzvorrichtung, Trockenätzverfahren sowie dabei verwendete Platte |
| US9754800B2 (en) | 2010-05-27 | 2017-09-05 | Applied Materials, Inc. | Selective etch for silicon films |
| US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
| KR20140024316A (ko) * | 2011-03-14 | 2014-02-28 | 어플라이드 머티어리얼스, 인코포레이티드 | Ｓｉｎ 필름들의 에칭을 위한 방법들 |
| JP2014508424A (ja) * | 2011-03-14 | 2014-04-03 | アプライド マテリアルズ インコーポレイテッド | ＳｉＮ膜のエッチング方法 |
| US9842744B2 (en) | 2011-03-14 | 2017-12-12 | Applied Materials, Inc. | Methods for etch of SiN films |
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| US10424485B2 (en) | 2013-03-01 | 2019-09-24 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
| US9704723B2 (en) | 2013-03-15 | 2017-07-11 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
| US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
| US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
| US9711366B2 (en) | 2013-11-12 | 2017-07-18 | Applied Materials, Inc. | Selective etch for metal-containing materials |
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| US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
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| US10468285B2 (en) | 2015-02-03 | 2019-11-05 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
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| US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
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|---|---|
| JPH0250197B2 (cs) | 1990-11-01 |
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