JPS59126778A - Method and device for plasma etching - Google Patents

Method and device for plasma etching

Info

Publication number
JPS59126778A
JPS59126778A JP179283A JP179283A JPS59126778A JP S59126778 A JPS59126778 A JP S59126778A JP 179283 A JP179283 A JP 179283A JP 179283 A JP179283 A JP 179283A JP S59126778 A JPS59126778 A JP S59126778A
Authority
JP
Japan
Prior art keywords
electrode
plasma etching
above
etching
treated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP179283A
Other versions
JPH0250197B2 (en
Inventor
Isamu Hijikata
Hisashi Nakane
Akira Uehara
Original Assignee
Tokyo Denshi Kagaku Kabushiki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Denshi Kagaku Kabushiki filed Critical Tokyo Denshi Kagaku Kabushiki
Priority to JP179283A priority Critical patent/JPH0250197B2/ja
Publication of JPS59126778A publication Critical patent/JPS59126778A/en
Publication of JPH0250197B2 publication Critical patent/JPH0250197B2/ja
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means

Abstract

PURPOSE:To enable precision plasma etching with good efficiency and high uniformity by interposing an insulating flat plate having many fine holes between a lower electrode to be placed thereon with an object to be treated and an upper electrode disposed oppositely thereto. CONSTITUTION:An electronic part forming material having a resist pattern is placed on a lower electrode 4 and an insulating flat plate 5 consisting of a ceramic, etc. having many fine holes is interposed, via supports 8 and 8' between an upper electrode 3 and the electrode 4, then a high frequency voltage is impressed on the electrode 3 and the plasma etching of the above-mentioned material is performed, in a plasma etching device consisting of a bell-shaped cover part 1, a bottom plate 2 attached with the electrode 4 and disposed with the electrode 3 oppositely to the electrode 4. The active seed of the above-mentioned material arriving at the object to be treated is adequately suppressed by the above-mentioned constitution, whereby precision etching having high uniformity is obtd., the damage of the resist, etc. is prevented, hence treating electric power is increased and high speed etching is made possible.
JP179283A 1983-01-11 1983-01-11 Expired - Lifetime JPH0250197B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP179283A JPH0250197B2 (en) 1983-01-11 1983-01-11

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP179283A JPH0250197B2 (en) 1983-01-11 1983-01-11

Publications (2)

Publication Number Publication Date
JPS59126778A true JPS59126778A (en) 1984-07-21
JPH0250197B2 JPH0250197B2 (en) 1990-11-01

Family

ID=11511424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP179283A Expired - Lifetime JPH0250197B2 (en) 1983-01-11 1983-01-11

Country Status (1)

Country Link
JP (1) JPH0250197B2 (en)

Cited By (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164433A (en) * 1986-12-26 1988-07-07 Matsushita Electric Ind Co Ltd Dry etching system
US5156703A (en) * 1987-03-18 1992-10-20 Hans Oechsner Mthod for the surface treatment of semiconductors by particle bombardment
DE10340751B4 (en) * 2002-08-28 2010-07-29 Kyocera Corp. Dry etching, dry etching, and used in this case plate
KR20140024316A (en) * 2011-03-14 2014-02-28 어플라이드 머티어리얼스, 인코포레이티드 Methods for etch of sin films
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9704723B2 (en) 2013-03-15 2017-07-11 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9711366B2 (en) 2013-11-12 2017-07-18 Applied Materials, Inc. Selective etch for metal-containing materials
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9754800B2 (en) 2010-05-27 2017-09-05 Applied Materials, Inc. Selective etch for silicon films
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US9773695B2 (en) 2014-07-31 2017-09-26 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9837249B2 (en) 2014-03-20 2017-12-05 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9885117B2 (en) 2014-03-31 2018-02-06 Applied Materials, Inc. Conditioned semiconductor system parts
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9978564B2 (en) 2012-09-21 2018-05-22 Applied Materials, Inc. Chemical control features in wafer process equipment
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10032606B2 (en) 2012-08-02 2018-07-24 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10062578B2 (en) 2011-03-14 2018-08-28 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US10062587B2 (en) 2012-07-18 2018-08-28 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring

Cited By (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164433A (en) * 1986-12-26 1988-07-07 Matsushita Electric Ind Co Ltd Dry etching system
US5156703A (en) * 1987-03-18 1992-10-20 Hans Oechsner Mthod for the surface treatment of semiconductors by particle bombardment
DE10340751B4 (en) * 2002-08-28 2010-07-29 Kyocera Corp. Dry etching, dry etching, and used in this case plate
US9754800B2 (en) 2010-05-27 2017-09-05 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
KR20140024316A (en) * 2011-03-14 2014-02-28 어플라이드 머티어리얼스, 인코포레이티드 Methods for etch of sin films
JP2014508424A (en) * 2011-03-14 2014-04-03 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Etching process of SiN films
US9842744B2 (en) 2011-03-14 2017-12-12 Applied Materials, Inc. Methods for etch of SiN films
US10062578B2 (en) 2011-03-14 2018-08-28 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US10062587B2 (en) 2012-07-18 2018-08-28 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US10032606B2 (en) 2012-08-02 2018-07-24 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9978564B2 (en) 2012-09-21 2018-05-22 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9704723B2 (en) 2013-03-15 2017-07-11 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9711366B2 (en) 2013-11-12 2017-07-18 Applied Materials, Inc. Selective etch for metal-containing materials
US9837249B2 (en) 2014-03-20 2017-12-05 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9885117B2 (en) 2014-03-31 2018-02-06 Applied Materials, Inc. Conditioned semiconductor system parts
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9773695B2 (en) 2014-07-31 2017-09-26 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9837284B2 (en) 2014-09-25 2017-12-05 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US10147620B2 (en) 2015-08-06 2018-12-04 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10224180B2 (en) 2016-10-04 2019-03-05 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US10319603B2 (en) 2016-10-07 2019-06-11 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10186428B2 (en) 2016-11-11 2019-01-22 Applied Materials, Inc. Removal methods for high aspect ratio structures
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10325923B2 (en) 2017-02-08 2019-06-18 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch

Also Published As

Publication number Publication date
JPH0250197B2 (en) 1990-11-01

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