JPS59119830A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To enable to reduce the process of IC manufacture by a method wherein ions are implanted in the wafer on which a photoresist pattern is formed, and then said photoresist is removed by performing a plasma ashing using excited oxygen. CONSTITUTION:An ion-implanting chamber 1 and a photoresist-removing chamber 2 are coupled through the intermediary of a gate valve 3. Said ion-implanting chamber 1 is maintained at 10<-6>Torr or thereabout by performing an evacuation from an exhaust tube 4 in the direction as shown by arrows in the diagram, and the photoresist-removing chamber 2 is maintained at 0.1Torr or thereabout by performing an evacuation from an exhaust tube 5 in the direction as shown by arrows in the diagram using a rotary pump. In the ion-implanting chamber 1, ion-implantation is performed on the wafer 6 whereon a desired a desired photoresist pattern was formed in the preceding process, and the control of the threshold voltage of the transistor region formed on the wafer can be accomplished. Then, the wafer 6 is moved to the photoresist removing chamber 2, and after the photoresist has been removed by supplying high frequency- excited oxygen and the like into the photoresist removing chamber 2, the wafer is picked out from the chamber for performance of the next process.

Description

Detailed Description of the Invention (+, 1 Technical Field of the Invention) The present invention relates to a method for manufacturing a semiconductor device, and more specifically, to a preliminary evacuation chamber from which the ion-implanted wafer is taken out, in an ion implantation process performed on a wafer. This invention relates to a method for removing photoresist 1- by installing a photoresist removal device.

(2) Technology background construction circuit (in 1) 1! In the two manufacturing units, an optical device for exposing the wafer, an etching device, an ion implantation device, etc. are installed separately, and processes such as exposure, etching, and ion implantation are performed in each device. I on the wafer
When forming C, it is necessary to transport the wafer between these devices every time.

If the IC manufacturing factory was not automated, the above-mentioned wafer transportation was done manually, but recently, automation in IC manufacturing factories has been promoted, and transport vehicles, belt conveyors, etc. are used to transport the wafer. These general feeding devices tend to be larger.

Since the wafer transport device contains the wafer therein, it moves at a speed equal to the walking speed of a human, without operating at high speed in order to avoid damage to the wafer.

Thus, as the TCi manufacturing plant becomes more compact, the amount of time it takes to send one wafer between the optical device, etching device ξ, ion t'L-human device, etc. increases, and the speed is almost equal to the walking speed of a person. i direction, which is done by a conveying device operated at speed.

(3) Prior Art and Problems While the above-mentioned transport device is used in the IC manufacturing field, there is a demand for shortening the manufacturing time (generally referred to as turn). In other words, although the conveyance device is not suitable for high-speed movement, there is a strong demand for shortening the time (hands) required to manufacture two ICs from the viewpoint of improving manufacturing yield. However, the 1st general feeder currently in use is not suitable for G-speed operation, and is manufactured by Ic.
Automation and short hinges are incompatible with each other, and this is an important issue in current IC manufacturing that is being examined from the standpoint of improving yield.

In particular, in MO5 type 1c, in order to realize enhancement/depletion mode (E/D mode) circuit operation, threshold (ll't)
It is generally known to control the X'l pressure.

First, the wafer is covered with HO 1-RENOS 1 in general, except for the transistor region where threshold (ij:j voltage control is to be performed) of the silicon wafer 1-, and then ion implantation is performed. After removing it, proceed to the next step.

The bottom resist I step, the ion implantation step, and the bottom resist 1 removal step described above are performed independently using respective apparatuses. Thus, the problems described above regarding the movement of wafers from one device to another occur.

(4) Purpose of the Invention In view of the above-mentioned conventional problems, a semiconductor device capable of shortening the steps in ICII manufacturing by effectively utilizing the time required for moving a wafer between an ion implantation device and a photoresist removal device. The purpose is to provide a method for manufacturing the device.

(5) Structure and purpose of the invention is to implant ions into a wafer on which a photoresist pattern has been formed in an ion implantation chamber, and then perform plasma ashing using excited oxygen in a photoresist removal chamber connected to the ion implantation chamber. This is achieved by providing a method for manufacturing a semiconductor device, characterized in that the photoresist is removed one step at a time.

(6) Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.

The gist of the method of the present invention is that, as described above, after the photoresist process, ion implantation and removal of the photoresist 1-1 are performed consistently. For this purpose, a device is used which is attached and shown in the 1iji plane view on page 1. Referring to the figure, 2 indicates an ion implantation chamber, and 2 indicates a photoresist removal chamber, and these chambers are connected via a gate valve 3. The ion implantation chamber 1 is heated to 10'-6 Tor by evacuation from the CJJI trachea 4 in the direction indicated by the arrow using, for example, a cryopump.
The photoresist processing chamber 2 is evacuated from the exhaust pipe 5 in the direction of the arrow by a rotary pump to a pressure of about 0.
Maintain pressure at I Torr culm.

Ion treatment chamber 1 maintained at a pressure of about 10-6 Torr
In this step, desired ions are implanted into the wafer 6 on which a desired photoresist pattern has been formed in the previous step, and threshold voltage control of the transistor region formed on the wafer is realized. The gate valve 3 is kept closed during the above ion implantation.

Next, the gate valve 3 is opened, the wafer 6 is moved to the photoresist removal chamber 2 using an arm (not shown), and the gate valve 3 is closed.

Next, high-frequency excited oxygen (02) is supplied to the post-photoresist process 2. To do this, oxygen is supplied from a source (not shown), such as an oxygen horn, through the supply pipe 7 in the direction of the arrow, and the supply pipe 7 is arranged in combination with a high frequency generating coil 8. 2 is sent in the direction of the arrow. Incidentally, since the degree of vacuum in the photoresist removal chamber 2 is lower than the degree of vacuum in the ion implantation chamber 1, it is easy to maintain the pressure in the photoresist removal chamber at about Q,1 Torr, and a rotary pump is sufficient. Furthermore, in order to excite oxygen, one microwave may be used in addition to the above-mentioned high frequency.

Inside the photoresist removal chamber 2, the photoresist is removed by plasma anothing using the above-mentioned high-frequency excited oxygen, and then the wafer 6 is taken out of the room using an arm (not shown) and transferred to the next step.

As can be understood from the above explanation, the time required for transferring the wafer 6 to be processed from the ion implantation chamber 1 to the photoresist removal line 2 is as follows. Disappeared 7y before moving to removal chamber 2.
Is it time for a conventional ion implantation bag)? The time required to move from Y to the photoresist removal equipment located at another location using the above-mentioned transport device is significantly reduced.

(7) Effects of the Invention As explained in detail in 2, according to the method of the present invention,
The time required for ion implantation and POI/resist removal to realize the circuit operation of the E/D mode in the 10S type IC is significantly reduced, and the IC manufacturing time is shortened accordingly, improving the manufacturing yield. It is highly effective.

[Brief explanation of the drawing]

The accompanying drawings are schematic cross-sectional views of the apparatus used to carry out the method of the invention. 1-Ion implantation chamber, 2-Botrecyst removal chamber, 3-Gate valve, 4. ．． 5-exhaust pipe, 6-wafer, 7-oxygen supply pipe, 8-interval frequency generation coil

Claims (1)

[Claims] The wafer on which the Botresis I pattern is formed is subjected to ion implantation in an ion implantation chamber, and then the potresist is removed by plasma ashing using excited oxygen in a photoresist removal chamber connected to the ion implantation chamber. A method for manufacturing a semiconductor device.