JPS59117738A - Manufacture of vertical magnetic recording medium - Google Patents

Manufacture of vertical magnetic recording medium

Info

Publication number
JPS59117738A
JPS59117738A JP23182382A JP23182382A JPS59117738A JP S59117738 A JPS59117738 A JP S59117738A JP 23182382 A JP23182382 A JP 23182382A JP 23182382 A JP23182382 A JP 23182382A JP S59117738 A JPS59117738 A JP S59117738A
Authority
JP
Japan
Prior art keywords
film
substrate
magnetic recording
preheated
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23182382A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Honda
和義 本田
Ryuji Sugita
龍二 杉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP23182382A priority Critical patent/JPS59117738A/en
Publication of JPS59117738A publication Critical patent/JPS59117738A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/246Replenishment of source material
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/85Coating a support with a magnetic layer by vapour deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

PURPOSE:To obtain a long-sized magnetic tape or the like whose magnetic film has a uniform thickness and a uniform composition consisting of Co and Cr by adding preheated Cr to an evaporating source when a vertically magnetizable film consisting essentially of Co and Cr is formed on a substrate. CONSTITUTION:A substrate 1 is sent from an unwinding system 3 to a winding system 4 along a drum 2, and a Co-Cr film is deposited on the substrate 1 from a Co-Cr evaporating source 5 by a vacuum deposition method. When the deposition is continued using the source 5, the amount of Cr in the composition of the resulting magnetic film decreases gradually because Cr has higher vapor pressure. In order to prevent the decrease, Cr particles are preheated to >=400 deg.C with a preheater placed around a Cr feeder 6, and the preheated Cr particles 14 are uniformly added to the source 5 while shaking a Cr feeding pass with a device 7 in the latera direction of the substrate. Thus, a magnetic film having a uniform thickness and a uniform composition can be formed rapidly on the long- sized substrate 1.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は超高密度磁気記録に適した垂直磁化膜の製造方
法に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a perpendicularly magnetized film suitable for ultra-high density magnetic recording.

従来例の構成とその問題点 記録波長の短い磁気記録を行なう際には、垂直磁気記録
が有効である。垂直磁気記録用記録媒体においては、磁
化容易方向が媒体膜面に垂直となることが必要である。
Conventional configuration and its problems Perpendicular magnetic recording is effective when performing magnetic recording with a short recording wavelength. In a recording medium for perpendicular magnetic recording, the direction of easy magnetization must be perpendicular to the surface of the medium film.

このような特性をもつ記録媒体の一つとしてGo  と
Cr を主成分としだ記録媒体が用いられるC以下この
膜をGo−Cr膜と称す)。
One of the recording media having such characteristics is a recording medium containing Go and Cr as main components (hereinafter this film will be referred to as a Go-Cr film).

co−Cr膜はスパッタリング法や真空蒸着法のいずれ
の方法によっても作製できる。特に後者の方法は膜の析
出速度を数1000λ/秒にすることができ、高い生産
性を持つ。
The co-Cr film can be produced by either a sputtering method or a vacuum evaporation method. In particular, the latter method can achieve a film deposition rate of several 1000 λ/sec and has high productivity.

第1図は真空蒸着法でGo−Cr膜を長尺の基板上に作
製するだめの装置の一例を示す図である。illl呆気
2によって高真空に排気された真空槽11中において、
巻出系3から回11ム方向13にぞって巻出された基板
1はドラム2にぞって移動し、マスク8の開口部で電子
銃1Qから電子ビーム9を入射されている(Eo−Cr
合金蒸発源6によってCo。
FIG. 1 is a diagram showing an example of an apparatus for producing a Go--Cr film on a long substrate by a vacuum evaporation method. In the vacuum chamber 11 evacuated to high vacuum by the illumination 2,
The substrate 1 unwound from the unwinding system 3 in the rotation direction 13 moves along the drum 2, and is irradiated with an electron beam 9 from the electron gun 1Q at the opening of the mask 8 (Eo -Cr
Co by the alloy evaporation source 6.

−Cr膜を真空蒸着されて巻取系4に巻取られる。-A Cr film is vacuum-deposited and wound onto the winding system 4.

しかしながら、この方法では、Co  とcr の蒸気
圧の差が大きいために、蒸着時間の経過に伴って蒸発源
の組成がCr の少ない組成となる。したかって真空蒸
着された膜の組成も蒸着時間の経過に伴ってCrの少な
い組成を持つようになり、組成安定な長尺のGo−Cr
膜を製造することができない() 発明の目的 本発明は、長尺基板上に基板の長手方向に組成と膜厚の
両方が安定なco−Cr膜を製造することを目的とする
However, in this method, since the difference in vapor pressure between Co 2 and Cr is large, the composition of the evaporation source becomes a composition containing less Cr as the deposition time progresses. Therefore, as the deposition time progresses, the composition of the vacuum-deposited film becomes less Cr, resulting in a long Go-Cr film with a stable composition.
OBJECT OF THE INVENTION The object of the present invention is to manufacture a co-Cr film on a long substrate, which is stable in both composition and film thickness in the longitudinal direction of the substrate.

発明の構成 本発明は基板上にGo  とCr を主成分とする垂直
磁化膜が形成されてなる磁気記録媒体の製造において、
Co  およびCr  を電子ビ ム法により移動する
基板」:に堆積さぜ、かつ#元類k(Cr  を追加投
入する際に、追加投入用Cr をあらかしめ予熱するこ
とを特徴とする垂直磁気記録媒体の製造方法であり、こ
れにより長尺基板上に基板の長手方向に組成と膜厚の両
方か安定なCo −G r膜を製造することができる。
Structure of the Invention The present invention relates to the production of a magnetic recording medium in which a perpendicularly magnetized film containing Go and Cr as main components is formed on a substrate.
Perpendicular magnetic recording is characterized in that when Co and Cr are deposited on a substrate on which Co and Cr are transferred by an electron beam method, and when additional Cr is added, the additional Cr is preheated. This is a method for manufacturing a medium, whereby a Co-Gr film that is stable in both composition and film thickness in the longitudinal direction of the substrate can be manufactured on a long substrate.

実施例の説明 蒸着時間の経過に伴って蒸発源のCr糾成が低下するの
を防ぐために、真空蒸着と並行して、蒸発源にQr を
追加投入することにより、長期間にわたって組成安定な
蒸着を行なえることが実験の結果間らかになった。
Description of Examples In order to prevent the Cr agglomeration in the evaporation source from decreasing as the evaporation time elapses, additional Qr is added to the evaporation source in parallel with the vacuum evaporation, thereby achieving compositionally stable evaporation over a long period of time. As a result of experiments, it became clear that this could be done.

Qr を追加投入するだめの装置の一例を第2図に示す
。なお、第2図(a)は側面図、同図(b)は要部平面
図である。巻出系3から回転方向13へ巻出された基板
1はトラム2にそって移動し、マスク8の開口部で、C
r供給装置6から供給路子を経て追加投入用Cr14の
供給を受けているCro−Cr合金蒸発源5によって、
Go−Cr膜を真空蒸着されて、巻取系4に巻取られる
An example of a device for additionally introducing Qr is shown in FIG. Note that FIG. 2(a) is a side view, and FIG. 2(b) is a plan view of the main part. The substrate 1 unwound from the unwinding system 3 in the rotational direction 13 moves along the tram 2 and is exposed to C at the opening of the mask 8.
By the Cro-Cr alloy evaporation source 5, which is supplied with Cr14 for additional input from the r supply device 6 via the supply path,
A Go-Cr film is vacuum-deposited and wound onto a winding system 4.

この方法によれは、従来の方法に比べてJ〈It、’j
間にわたり組成安定な蒸着を行なえるのであるが、Go
−Or合金蒸発源内にOr が追加投入されると、その
都度、瞬間的に蒸発源の温度低下が生し、そのためQo
−Cr合金蒸発源からの蒸発量の変動、すなわち真空蒸
着されるGo−C1:膜の膜厚変動がOrを追加投入し
ない場合に比へて大きくなることが実験的に明らかとな
った。このため、たとえば製造しだ長尺Go−Or膜を
長手方向に切■fシて幅の狭い長尺テープとして使用し
ようとすると、上述の膜厚変動により特性の安定したテ
ープが得られない1、そこで発明者らは追加投入するO
r をco−Cr合金蒸発源に投入する前に予熱するこ
とにより、」二連の膜厚変動の軽減を試みだ結果、Or
 の予熱によって膜厚変動を小さくすることかでき、特
に400”C程度以上に予熱した場合にCr の追加投
入の影響かほとんとなくなることが明らかになった。
With this method, compared to the conventional method, J〈It,'j
However, Go
-When additional Or is added into the Or alloy evaporation source, the temperature of the evaporation source instantaneously decreases each time, resulting in a Qo
It has been experimentally revealed that the variation in the amount of evaporation from the -Cr alloy evaporation source, that is, the variation in the thickness of the vacuum-deposited Go-C1 film, becomes larger than when Or is not added. For this reason, for example, if you try to cut a long Go-Or film in the longitudinal direction after manufacturing and use it as a long tape with a narrow width, you will not be able to obtain a tape with stable characteristics due to the film thickness variation described above. , so the inventors added O
By preheating r before introducing it into the co-Cr alloy evaporation source, an attempt was made to reduce the two series of film thickness fluctuations.
It has been found that the film thickness variation can be reduced by preheating, and in particular, when preheating to about 400''C or higher, the effect of additional Cr addition is almost eliminated.

なお、追加投入するCr の予熱方法の一例としてCa
r供給装置の一部外周にニクロム線を巻きつけて、追加
投入直前の数分間程度、追加投入用Orか加熱1′16
分にととまるようにした。
In addition, as an example of a method for preheating Cr to be added, Ca
r Wrap a nichrome wire around the outer circumference of part of the supply device and heat it for a few minutes just before additional charging.
I tried to stop at a minute.

捷だ、追加投入するCr の温度はCr 粒間に挿入さ
れている熱電対を用いて測定し、追加投入1′るCr 
の温度を設定した。
The temperature of the additional Cr is measured using a thermocouple inserted between the Cr grains.
The temperature was set.

第3図は追加投入するCr の予熱法の一例を説明する
だめの図である。Or充填部15中に充填されメヒ追加
投入用のCrは供給路16を通過中に、この供給路16
を巻回するよう配置されているヒータ17により加熱さ
れ、そのおよその温度を温度上ンサ18により測定され
て供給口19矛・らCo−Cr合金蒸発源に供給される
FIG. 3 is a diagram for explaining an example of a method for preheating additional Cr. While the Cr charged in the Or filling part 15 for additional medicinal feeding is passing through the supply path 16,
It is heated by a heater 17 arranged so as to be wound around it, and its approximate temperature is measured by a temperature sensor 18, and then supplied from a supply port 19 to a Co--Cr alloy evaporation source.

第4図に追加投入するQrの温度とQo−Cr膜の膜厚
変動との関係を示す。なお、横軸は追加投入するCr 
の温度を、縦軸に透過光膜厚計で測定した10分間の膜
厚変動幅をそれぞれ示す。追加投入するQr は平均粒
径3 mfn程贋の粒状で、この粒状のOr を4KW
の電子ビーム入力を受けている質量660y程度のGo
−Car合金蒸発源中に5グ/分程度の割合で追加投入
した。Go−Cr膜の堆積速度は約5000A/秒であ
る。基板移動速度は約sm/分である。
FIG. 4 shows the relationship between the temperature of Qr added and the variation in the thickness of the Qo-Cr film. In addition, the horizontal axis is the additional input of Cr.
The vertical axis shows the range of film thickness variation over 10 minutes measured with a transmitted light film thickness meter. The Qr to be added is a fake grain with an average particle size of 3 mfn, and the Or of this grain is 4KW.
Go with a mass of about 660y receives the electron beam input of
-Car alloy was added to the evaporation source at a rate of about 5 g/min. The deposition rate of the Go-Cr film is about 5000 A/sec. The substrate movement speed is approximately sm/min.

一方、Or を追加投入しないでその他の条件を同じに
して実験を行なった場合の3分間の膜厚変動幅は、第2
図の2本の破線の間の範囲に分布した。
On the other hand, when conducting the experiment with the other conditions the same without adding Or, the width of the film thickness fluctuation for 3 minutes is the second
It was distributed in the range between the two broken lines in the figure.

第4図から明らかなように、追加投入するQrの温度が
高い程Go−Or膜の膜厚変動が小さい。とりわけ、追
加投入するOrの温度が400″C程度以上となると膜
厚変動はほぼ一定で、Orの追加供給をしない場合とほ
とんど変わらない。すなわち、膜厚の変動が非常に小さ
く、かつ組成の安定したCo Cr膜を作製することが
できる5、第5図に追加投入するQr の平均粒径とG
o−Cr膜の膜厚変動との関係を示す。なお、横軸は追
加投入するCr の平均粒径を縦軸は透過光膜厚計で測
定した10分間の膜厚変動幅をそれぞれ表わしている。
As is clear from FIG. 4, the higher the temperature of the additional Qr, the smaller the variation in the thickness of the Go-Or film. In particular, when the temperature of the additional Or added is about 400"C or higher, the film thickness variation is almost constant and is almost the same as when no additional Or is supplied. In other words, the film thickness variation is very small and the composition is A stable CoCr film can be produced. 5. Figure 5 shows the average particle size of Qr and G
The relationship with the film thickness variation of the o-Cr film is shown. Note that the horizontal axis represents the average particle diameter of additionally added Cr, and the vertical axis represents the range of film thickness variation over 10 minutes as measured by a transmitted light film thickness meter.

追加投入するCr の温度は約20パC(予熱なし)〜
約600”Cであり、各温度に予熱された粒状Cr を
、4 KWの電子ビーム入力を受けている質量650y
程度のGo−Car合金蒸発源中に、62/分程度の割
合で追加投入した。Go−Cr膜の堆積速度は、p、1
5000λ/秒である。基板移動速度は約8m/分であ
る。
The temperature of additional Cr is approximately 20 PaC (without preheating) ~
A mass of 650 y received 4 KW of electron beam input and granulated Cr preheated to approximately 600”C.
It was added to the Go-Car alloy evaporation source at a rate of about 62/min. The deposition rate of the Go-Cr film is p, 1
It is 5000λ/sec. The substrate moving speed is approximately 8 m/min.

第5図から、追加投入するOr の平均粒径の小さい程
、膜厚の変動幅の小さいことがわかる。また、追加投入
するCr の各平均粒径に対して、予熱温度が高い程、
Qr投入による膜厚変動か小さくなる傾向にあることも
わかる。さらに追加投入するOrの平均粒径が6 mr
n程度以下のところでは、約400°C以上に予熱すれ
ばOr投入による膜厚変動がほとんどなくなることも明
らかである。
From FIG. 5, it can be seen that the smaller the average particle diameter of the additionally added Or, the smaller the fluctuation width of the film thickness. In addition, for each average particle size of additionally added Cr, the higher the preheating temperature, the more
It can also be seen that the film thickness variation due to Qr input tends to be smaller. Furthermore, the average particle size of the additionally added Or is 6 mr.
It is also clear that at a temperature below about n, if preheating is performed to about 400° C. or higher, the film thickness variation due to the addition of Or can be almost eliminated.

第6図にCr を追加投入して長尺基板上に製造したG
o−Cr膜の基板長手方向の組成変動を示す。
Figure 6 shows G produced on a long substrate with additional addition of Cr.
Fig. 3 shows the compositional fluctuation of the o-Cr film in the longitudinal direction of the substrate.

なお、横軸は基板長手方向の位置を、縦軸は膜中のQr
重量係をそれぞれ表わす。追加投入するQrは平均粒径
約3朋とし、約400’Cに予熱した。
Note that the horizontal axis represents the position in the longitudinal direction of the substrate, and the vertical axis represents the position of Qr in the film.
Each represents the weight section. The additional Qr added had an average particle size of about 3 mm, and was preheated to about 400'C.

4氾の電子ビーム入力を受けている質量550/’程度
のGo−Gr合金蒸発源中に5y1分程度の割合でOr
 を追加投入し、Go−Cr膜の堆積速度として約50
00λ/秒を得だ。製造したGO−Cr膜の膜厚はおお
むね1600Aであった。
In a Go-Gr alloy evaporation source with a mass of about 550/' that receives electron beam input of 4 floods, Or
was added to increase the deposition rate of the Go-Cr film to about 50%.
I got 00λ/sec. The thickness of the manufactured GO-Cr film was approximately 1600A.

発明の効果 本発明により、長尺基板上に基板の長手方向に組成と膜
厚の両方が安定なC0−Cr膜を製造することができる
Effects of the Invention According to the present invention, a C0-Cr film having both stable composition and film thickness in the longitudinal direction of the substrate can be manufactured on a long substrate.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はCo−0r膜の連続巻取真空蒸着法を実施する
だめの装置の構成の一例を示す図、第2図は蒸発のにQ
r を追加投入するだめの装置の基本構成例を示し、同
図(a)は側面図、同図(b)は要部平面図である。第
3図は本発明の方法を実施するだめの予熱機能をもたせ
たQr 供給装置の一例を示す図、第4図は追加投入す
るCr の温度とC0−Cr膜の膜厚変動との関係を示
す図、第5図は追加投入するQrの平均粒径とCo−0
r膜の膜厚変動との関係を示す図、第6図は長尺基板上
に製造したGo−Cr膜の基板長手方向の組成変動を示
す図である。 1  基板、2  ドラム、3  巻出系、49   
′、1LLf−ヒム、1o   ′、Ii子Ljc、1
1    l’l、空槽、12 4J1気系、13  
回転方向、14追加投入用Or、15−− Or充填部
、16供給路、17  ヒータ、18  温度セフす、
19  供給口。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名−2
1: 第1図 第2図 (b> 第3図 jブ1)101入1’6 Cr’ 44  (’07A
5図
Figure 1 is a diagram showing an example of the configuration of an apparatus for carrying out the continuous winding vacuum evaporation method of Co-0r film.
An example of the basic configuration of a device for additionally introducing r 2 is shown, in which FIG. 5A is a side view and FIG. Fig. 3 shows an example of a Qr supply device with a preheating function for carrying out the method of the present invention, and Fig. 4 shows the relationship between the temperature of additionally charged Cr and the film thickness variation of the C0-Cr film. Figure 5 shows the average particle diameter of additionally added Qr and Co-0.
FIG. 6 is a diagram showing the relationship with the film thickness variation of the r film, and FIG. 6 is a diagram showing the composition variation in the longitudinal direction of the substrate of a Go-Cr film manufactured on a long substrate. 1 board, 2 drum, 3 unwinding system, 49
′, 1LLf-him, 1o ′, Ii child Ljc, 1
1 l'l, empty tank, 12 4J1 gas system, 13
Rotation direction, 14 additional charging or, 15--or filling section, 16 supply path, 17 heater, 18 temperature control,
19 Supply port. Name of agent: Patent attorney Toshio Nakao and 1 other person-2
1: Fig. 1 Fig. 2 (b > Fig. 3 j b 1) 101 pieces 1'6 Cr' 44 ('07A
Figure 5

Claims (2)

【特許請求の範囲】[Claims] (1)基板上に、coとQrを主成分とする垂直磁化膜
が形成されてなる磁気記録媒体の製造において、COお
よびQrを電子ビーム法により移動する前記基板−にに
堆積させ、かつ蒸発源にQr を追加投入する際に、追
加投入用Qr をあらかじめ予熱することを特徴とする
垂直磁気記録媒体の製造方法。
(1) In manufacturing a magnetic recording medium in which a perpendicularly magnetized film containing Co and Qr as main components is formed on a substrate, CO and Qr are deposited on the moving substrate by an electron beam method, and then evaporated. 1. A method for producing a perpendicular magnetic recording medium, which comprises preheating Qr for additional charging when additionally charging Qr to a source.
(2)追加投入用Qr をあらかじめ400″C程度以
上にP熱すること全特徴とする峙♂l請求の・11J7
囲第1項に記載の垂直磁気記録媒体の製造方法。
(2) ・11J7 of the request for a complete feature that the Qr for additional input is preheated to about 400″C or higher
A method for manufacturing a perpendicular magnetic recording medium according to item 1.
JP23182382A 1982-12-24 1982-12-24 Manufacture of vertical magnetic recording medium Pending JPS59117738A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23182382A JPS59117738A (en) 1982-12-24 1982-12-24 Manufacture of vertical magnetic recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23182382A JPS59117738A (en) 1982-12-24 1982-12-24 Manufacture of vertical magnetic recording medium

Publications (1)

Publication Number Publication Date
JPS59117738A true JPS59117738A (en) 1984-07-07

Family

ID=16929573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23182382A Pending JPS59117738A (en) 1982-12-24 1982-12-24 Manufacture of vertical magnetic recording medium

Country Status (1)

Country Link
JP (1) JPS59117738A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283029A (en) * 1985-06-07 1986-12-13 Tdk Corp Magnetic alloy material for producing magnetic recording medium and production of magnetic recording medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283029A (en) * 1985-06-07 1986-12-13 Tdk Corp Magnetic alloy material for producing magnetic recording medium and production of magnetic recording medium

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