JPS59116192A - 分子線結晶成長方法 - Google Patents

分子線結晶成長方法

Info

Publication number
JPS59116192A
JPS59116192A JP22454782A JP22454782A JPS59116192A JP S59116192 A JPS59116192 A JP S59116192A JP 22454782 A JP22454782 A JP 22454782A JP 22454782 A JP22454782 A JP 22454782A JP S59116192 A JPS59116192 A JP S59116192A
Authority
JP
Japan
Prior art keywords
crystal
single crystal
film
substrate
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22454782A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0310595B2 (enrdf_load_stackoverflow
Inventor
Junji Saito
淳二 斉藤
Kazuo Nanbu
和夫 南部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22454782A priority Critical patent/JPS59116192A/ja
Publication of JPS59116192A publication Critical patent/JPS59116192A/ja
Publication of JPH0310595B2 publication Critical patent/JPH0310595B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/04—Pattern deposit, e.g. by using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP22454782A 1982-12-21 1982-12-21 分子線結晶成長方法 Granted JPS59116192A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22454782A JPS59116192A (ja) 1982-12-21 1982-12-21 分子線結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22454782A JPS59116192A (ja) 1982-12-21 1982-12-21 分子線結晶成長方法

Publications (2)

Publication Number Publication Date
JPS59116192A true JPS59116192A (ja) 1984-07-04
JPH0310595B2 JPH0310595B2 (enrdf_load_stackoverflow) 1991-02-14

Family

ID=16815498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22454782A Granted JPS59116192A (ja) 1982-12-21 1982-12-21 分子線結晶成長方法

Country Status (1)

Country Link
JP (1) JPS59116192A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60728A (ja) * 1983-06-16 1985-01-05 Sanyo Electric Co Ltd 分子線エピタキシヤル成長法
JPS61131526A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd 半導体装置の製造方法
JPS61225817A (ja) * 1985-03-29 1986-10-07 Sharp Corp 分子線エピタキシヤル装置
JPS62269310A (ja) * 1986-05-19 1987-11-21 Fujitsu Ltd 分子線結晶成長方法
JPS6394614A (ja) * 1986-10-09 1988-04-25 Matsushita Electric Ind Co Ltd 分子線結晶成長装置
JP2010050467A (ja) * 2009-10-01 2010-03-04 Asahi Kasei Electronics Co Ltd 半導体薄膜素子の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54122697A (en) * 1978-03-16 1979-09-22 Nec Corp Method and apparatus for forming silicon oxide ion
JPS5552220A (en) * 1978-10-13 1980-04-16 Fujitsu Ltd Manufacturing of semiconductor intergrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54122697A (en) * 1978-03-16 1979-09-22 Nec Corp Method and apparatus for forming silicon oxide ion
JPS5552220A (en) * 1978-10-13 1980-04-16 Fujitsu Ltd Manufacturing of semiconductor intergrated circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60728A (ja) * 1983-06-16 1985-01-05 Sanyo Electric Co Ltd 分子線エピタキシヤル成長法
JPS61131526A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd 半導体装置の製造方法
JPS61225817A (ja) * 1985-03-29 1986-10-07 Sharp Corp 分子線エピタキシヤル装置
JPS62269310A (ja) * 1986-05-19 1987-11-21 Fujitsu Ltd 分子線結晶成長方法
JPS6394614A (ja) * 1986-10-09 1988-04-25 Matsushita Electric Ind Co Ltd 分子線結晶成長装置
JP2010050467A (ja) * 2009-10-01 2010-03-04 Asahi Kasei Electronics Co Ltd 半導体薄膜素子の製造方法

Also Published As

Publication number Publication date
JPH0310595B2 (enrdf_load_stackoverflow) 1991-02-14

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