JPS59115651U - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59115651U
JPS59115651U JP1983009435U JP943583U JPS59115651U JP S59115651 U JPS59115651 U JP S59115651U JP 1983009435 U JP1983009435 U JP 1983009435U JP 943583 U JP943583 U JP 943583U JP S59115651 U JPS59115651 U JP S59115651U
Authority
JP
Japan
Prior art keywords
semiconductor equipment
semiconductor
recorded
concentricity
concentric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1983009435U
Other languages
English (en)
Inventor
丸田　三郎
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP1983009435U priority Critical patent/JPS59115651U/ja
Publication of JPS59115651U publication Critical patent/JPS59115651U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第１図ａ、、ｂはそれぞれ従来の半導体装置の断面図、
第２図ａ、　　ｂはそれぞれ本考案の実施例の半導体装
置の断面図であり、第３図ａ乃至ｆは第２図ａに示す装
置を製造する順序の１例を示す断面図である。 １・・・・・・半導体、２・・・・・・バリア金属、３
・・・・・・絶縁膜、４・・・・・・電極金属である。

Claims (1)

    【実用新案登録請求の範囲】
  1. 半導体ダイオードの接合部が同心状でその同心内に電極
    部を設けたことを特徴とする半導体装置。
JP1983009435U 1983-01-26 1983-01-26 半導体装置 Pending JPS59115651U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1983009435U JPS59115651U (ja) 1983-01-26 1983-01-26 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1983009435U JPS59115651U (ja) 1983-01-26 1983-01-26 半導体装置

Publications (1)

Publication Number Publication Date
JPS59115651U true JPS59115651U (ja) 1984-08-04

Family

ID=30140893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1983009435U Pending JPS59115651U (ja) 1983-01-26 1983-01-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS59115651U (ja)

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