JPS59114877A - Semiconductor photo coupler - Google Patents
Semiconductor photo couplerInfo
- Publication number
- JPS59114877A JPS59114877A JP57225465A JP22546582A JPS59114877A JP S59114877 A JPS59114877 A JP S59114877A JP 57225465 A JP57225465 A JP 57225465A JP 22546582 A JP22546582 A JP 22546582A JP S59114877 A JPS59114877 A JP S59114877A
- Authority
- JP
- Japan
- Prior art keywords
- light
- wavelength
- receiving element
- light receiving
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000010168 coupling process Methods 0.000 abstract description 15
- 238000005859 coupling reaction Methods 0.000 abstract description 15
- 230000008878 coupling Effects 0.000 abstract description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 12
- 239000013078 crystal Substances 0.000 abstract description 5
- 229910020751 SixGe1-x Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 13
- 239000007789 gas Substances 0.000 description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 101000845174 Rattus norvegicus Tsukushi Proteins 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は受光のピーク波長が異なるアモルファス半導体
を含む受光素子を備えた半導体光結合装置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a semiconductor optical coupling device equipped with a light receiving element including an amorphous semiconductor having different peak wavelengths of light reception.
（ロ）従来技術
本発明者等は半導体材料として有望視されているアモル
ファスシリコンの如きアモルファス半導体から成る太陽
電池及び光センサを実用化すると袂に、祈るアモルファ
ス半導体？受光素子とした光結合装置の開発を進めてい
る。(B) Prior Art The present inventors have been praying for the practical use of solar cells and optical sensors made of amorphous semiconductors such as amorphous silicon, which is seen as a promising semiconductor material. We are proceeding with the development of an optical coupling device as a photodetector.
化１図は特願昭５６−２００４６９号として本願出願人
が既に出願した光結合装置を示し、（１）はガラス・耐
熱プラスチック等から成る光伝搬媒体としての絶縁基板
、（２ａ）（２ｂ）は該絶縁基板１１Ｊの一方の一主面
（ｉａ）ＶＣ配置された第１・第２の発光素子、１ａ）
（５ｂ）は上記絶縁基板ｆｉｌの他方の一主面（１ｂ）
に形成された第１・第２の受光素子で、夫々第１・第２
の発光素子（２ａ）（２ｂ）−ｔｄ １
兵４油＃並びに受光素子（３ａ）（３ｂ）は上記絶縁基
板（１）？隔てて対向し、対向したもの同士が光学的に
結合する。Figure 1 shows an optical coupling device already filed by the applicant as Japanese Patent Application No. 56-200469. is one main surface (ia) of the insulating substrate 11J, first and second light emitting elements arranged with VC, 1a)
(5b) is the other main surface (1b) of the insulating substrate fil.
The first and second light-receiving elements are formed in the first and second light-receiving elements, respectively.
Light-emitting elements (2a) (2b)-td 1
Soldier 4 oil # and light receiving elements (3a) (3b) are the above insulating substrate (1)? They are separated and face each other, and the opposing parts are optically coupled to each other.
上記第１・第２の発光素子（２ａ）（２ｂ）ｉま例えば
発光中心波長が５６５ｎｍの緑色光を発光するガリウム
燐ＧａＰ単結晶から成り、その電極面の一部分は第２図
に示す如き絶縁基板（１）の−主面（１１ａ）Ｋパター
ン印刷された限ペースト等の４磁性接着剤ｔ４Ｊを介し
て上記絶縁基板１１１ｆｒ：伝搬しようとする光を遮る
ことなく被着される。そして上記第１・第２の発光素子
（２ａ）（２ｂ）の他の電極面はワイヤリード（５ａ）
（５ｂ）ｉｋ介して絶縁基＃ｆＬｔｌ）、ｔの電極膜（
６）に結合される。The first and second light emitting elements (2a) and (2b)i are made of, for example, a gallium phosphorus GaP single crystal that emits green light with an emission center wavelength of 565 nm, and a part of the electrode surface is insulated as shown in FIG. The main surface (11a) of the substrate (1) is adhered to the above-mentioned insulating substrate 111fr via a magnetic adhesive t4J such as a magnetic paste printed with a K pattern without blocking the light that is about to propagate. The other electrode surfaces of the first and second light emitting elements (2a) and (2b) are wire leads (5a).
(5b) Insulating group #fLtl) through ik, electrode film of t (
6).
一方、絶縁基板（１）の他方の一主面Ｃ１ｂ）に設けら
れた第１・第２の受光素子（３ａ）（３ｂ）ｔま上記絶
縁基板（１）上にバターニングされた酸化スズ（ＳｎＯ
２）、酸化（ンジクム（Ｉｎ２０３）、酸化インジウＡ
−スズ（Ｉｎ２０ｓ：５ｎＯ２）等の透明電極膜＋７１
上に例えば受光中心波長が５８０ｎｍのＰＩＮ接合型の
アモルファスシリコン層（８）が被着され、更にアルミ
ニクム等の金属電極膜（９）が取置された積層構造を持
つ。そして、上記第１の受光素子（６ａ）の金属電極膜
（９）は絶縁基板（１３上に延在し隣接する第２の受光
素子（６ｂ）の透明磁極膜１７）と結合する。七の結果
、第１の受光素子（６ａ〕と第２の受光素子（３ｂ）と
は直列関係になるべく接続される。On the other hand, the first and second light-receiving elements (3a) (3b)t provided on the other main surface C1b) of the insulating substrate (1) are covered with tin oxide (patterned) on the insulating substrate (1). SnO
2), Oxidation (In203), Indium oxide A
-Transparent electrode film such as tin (In20s:5nO2) +71
It has a laminated structure in which, for example, a PIN junction type amorphous silicon layer (8) with a light receiving center wavelength of 580 nm is deposited on top, and a metal electrode film (9) made of aluminum or the like is further provided. The metal electrode film (9) of the first light receiving element (6a) is coupled to the insulating substrate (the transparent magnetic pole film 17 of the second light receiving element (6b) extending over and adjacent to 13). As a result of 7, the first light receiving element (6a) and the second light receiving element (3b) are connected in series as much as possible.
然し乍ら、上記絶縁基板（１）を挾んで夫々対向する第
１の発光並びに受光素子（２ａ）（３ａ）から成る第１
の光結合対と、第２の発光並びに受光素子（２ｂ）（３
ｂ）から成る第２の光結合対とに、同一波長のｓ６ｓｎ
ｍの緑色光によって光結合しているために、第１の発光
素子（２ａ〕から放射された光は対向している第１の受
光素子（５ａ）ＶＣ伝搬するのみならず、絶縁基板（１
）中な散乱した一部の光が第２の受光素子（３ｂ）Ｋま
で到達する所謂クロストークが発生する危惧？有してい
た。即ち、隣接する光結合対の光が相互に干渉するとク
ロストークが発生し誤動作するために、祈るクロストー
クの発生は好ましくない。However, the first light-emitting and light-receiving elements (2a) and (3a) are arranged opposite to each other with the insulating substrate (1) in between.
and a second light emitting and light receiving element (2b) (3
b) and the second optical coupling pair consisting of s6sn of the same wavelength.
Since the light is optically coupled by the green light of m, the light emitted from the first light emitting element (2a) not only propagates to the opposing first light receiving element (5a) but also to the insulating substrate (1).
) Is there a risk that so-called crosstalk may occur where some of the scattered light reaches the second light-receiving element (3b)K? had. That is, when the lights of adjacent optical coupling pairs interfere with each other, crosstalk occurs and malfunction occurs, so it is undesirable for crosstalk to occur.
（ハ） 発明の目ｔ３り
本発明は上述の如き誤動作の原因となるクロストークな
防止することを目的として為されたものである。(C) Aspects of the Invention t3 The present invention has been made for the purpose of preventing crosstalk that causes malfunctions as described above.
（→ 発明の構成
水弁ＥＩＩＨよ、第１の波長２辷客に受光のピークが存
在するアモルファス半導体な含む第１の受光素子と、第
２の波長↓ｔに受光のピークが存在するアモルファス半
導体と含む第２の受光素子と、路用１の波長辷並びに第
２の波長↓七の光な夫々独立した電気倍り１て基づき放
射する第１・第２の発光素子と、を具備し、上記両受光
素子並びに自発光素子？各々光伝搬媒体の同一面に並置
すると共に、波長が略等しい受光素子並びＶＣ発光素子
の一対の各々を対向せしめ光学的に結合する構成にある
。(→ Structure of the invention Water valve EIIH, a first light receiving element including an amorphous semiconductor whose light reception peak exists at a first wavelength ↓t, and an amorphous semiconductor whose light reception peak exists at a second wavelength ↓t) and first and second light emitting elements that emit light based on independent electrical multipliers 1, respectively, with a wavelength range of 1 and a second wavelength ↓7, Both of the light receiving elements and the self-emitting element are arranged side by side on the same surface of the light propagation medium, and the light receiving element and the VC light emitting element having substantially the same wavelength are arranged to face each other and optically coupled.
（（ホ）実施例
第６図は本発明の一実施例を示し、第１図の従来装置と
異なるところは第１の光結合対と第２の光結合対との動
作波長（結合波長）を異ならしめるべく、例えば第１の
光結合対を構成する第１の発光素子（２ａ）を発光中心
波長５６５ｎｍの緑色光２発光するＧａＰ単結晶で構成
し、第１の受光素子（３ａｌ−受光のピークが５８Ｑｎ
ｍのアモルファスシリコン（ａ−８ｉ：Ｈ）で構成スる
と共に、第２の光結合対の第２発光素子（２Ｃ〕として
発光中心波長７００ｎｍのＧａＰ単結晶から成るＬＥＤ
を使用し、第２の受光素子（５ｃ）の受光のピークが６
８０１ｍのアモルファスシリコンゲルマニウム（ａ−３
ｉｘ Ｇｅ１−Ｘ：Ｈンを選択する。即ち、第１の光結
合対は第１の波長５６５ｎｍで光結合すると共に、第２
の光結合対は第１のそれと異なる７００ｎｍで光結合す
る。((E) Embodiment FIG. 6 shows an embodiment of the present invention. The difference from the conventional device shown in FIG. 1 is the operating wavelength (coupling wavelength) of the first optical coupling pair and the second optical coupling pair. For example, the first light-emitting element (2a) constituting the first optical coupling pair is made of a GaP single crystal that emits two green lights with an emission center wavelength of 565 nm, and the first light-receiving element (3al-light-receiving element The peak of is 58Qn
The LED is made of amorphous silicon (a-8i:H) of m and is made of a GaP single crystal with an emission center wavelength of 700 nm as the second light emitting element (2C) of the second optical coupling pair.
is used, and the peak of light reception by the second light receiving element (5c) is 6.
801m amorphous silicon germanium (a-3
Select ix Ge1-X:H. That is, the first optical coupling pair optically couples at the first wavelength of 565 nm, and the second optical coupling pair optically couples at the first wavelength of 565 nm.
The optical coupling pair is optically coupled at a wavelength of 700 nm different from that of the first one.
次いで本発明の要旨となる受光のピークが異なる第１
・第２の受光素子（３ａ）（３ｃ）の製造方法を説明す
る。Next, the first method has a different peak of light reception, which is the gist of the present invention.
- The manufacturing method of the second light receiving elements (3a) (3c) will be explained.
先ず透明磁極膜（７）が蒸着若しくはスパッタにより被
着されパターニングされたガラスから成る絶縁基板（Ｉ
Ｊ＆プラズマ反応炉の反応電極間に配置し、第１の受光
素子（３りの透明゛磁極膜（７］のみ５ｒ″露出せしめ
上記絶縁基板（ＩＪを約５［ＪＯ”Ｃに加熱した状態で
シラン（ＳユＨ４）ガスと不純物ガスとしてジボラン（
Ｂ２Ｈ６）＆１１０００ｐｐ導入する。そして上記反１
を嶋ｔＡＫ１３．５６ＭＨｚ、１ ｏｏｗの高周波電力
を１勺等して、上記絶縁基板（１）上に厚みｙｆｉ’ｌ
１０ （］ ＡのＰ型のアモルファスシリコン（ａ−
８ｉ：Ｈ）’ｒ得る。その後８２Ｈ（Ｓガスのみを除去
して厚み約５０００人の１型１ａ−８ｉ：Ｈ７ａ／析出
せしめ、更にフォスフイン（ＰＨ３）を不純物ガスとし
てｉｏｏｏｐｐｍ混入し６００１程度のＮ型ａ−８ｉ：
Ｈｖ影形成、絶縁基板（ＩＪ ｔＩｌｌ カらＰ工Ｎ各
層を重畳したＰＩＮ接合を有するアモルファスシリコン
（ａ−８ｉ：Ｈ）半導体層（８１ｅ 得る。First, a transparent magnetic pole film (7) is deposited by vapor deposition or sputtering on an insulating substrate (I
Place the first light receiving element (only the three transparent magnetic pole films (7) are exposed at 5r") between the reaction electrodes of the J & plasma reactor, and place the above insulating substrate (with the IJ heated to about 5[JO"C). Silane (S-H4) gas and diborane (as an impurity gas)
B2H6)&11000pp is introduced. And the above anti-1
A high frequency power of 13.56 MHz and 100 MHz is applied to the above insulating substrate (1) to a thickness of yfi'l.
10 (] A P-type amorphous silicon (a-
8i:H)'r obtained. After that, 82H (only the S gas was removed to precipitate 1-type 1a-8i:H7a/with a thickness of about 5000 people, and further ioooppm of phosphine (PH3) was mixed as an impurity gas, and N-type a-8i with a thickness of about 6001:
Hv shadow formation, an amorphous silicon (a-8i:H) semiconductor layer (81e) having a PIN junction with superimposed P and N layers from an insulating substrate (IJ tIll) is obtained.
向上記ａ−Ｓユ＝Ｈの成長速度は各層とも約１μｍ／ｈ
ｒであるので、所望の厚みな得るべく時間制御される。The growth rate of Koji a-S Yu=H is approximately 1 μm/h for each layer.
r, the time is controlled to obtain the desired thickness.
次いで上記アモルファスシリコン半導体層（８）乞適当
なマスク手段で復い第２の受光素子（６Ｃ）を形成する
アモルファスシリコンゲルマニウム（ａ−３ｉｘ Ｇｅ
１−ｘ：Ｈ）層（ｓｃ）１７：プラズマ反応によシ被着
する。この時導入される反応ガ、ｃはｓｉＨ，＊−６ｏ
９６、ゲルマン（ＧｅＨ４〕−４０９６である。他の条
件は第１の受光素子（６ａ）を形成するａ−５ｉ：Ｈと
同様である。Next, the amorphous silicon semiconductor layer (8) is covered with amorphous silicon germanium (a-3ix Ge) which forms the second light receiving element (6C).
1-x:H) layer (sc) 17: Deposited by plasma reaction. The reaction gas introduced at this time, c is siH, *-6o
96, germane (GeH4)-4096.Other conditions are the same as a-5i:H forming the first light receiving element (6a).
この様にして製造されたａ−３ｉ：Ｈ並びＶＣａ−８ｉ
ｘＧｅ１−Ｘ：Ｈから成る第１・第２の受光素子（３ａ
）（３ｃ）が直列的に接続せしめられると等刷部に第４
図の如き回路図に置挟することができる。即ち、受光素
子（３ａ）（３０）は夫々直流電流源（１０ａ）（ＩＯ
Ｃ）とダイオード（ｉｌａＢｉｉｃ）との逆並列回路で
表わすことができる。同図ｖｃｉいて、０は出力端子σ
ハシ間に接続され次負荷抵抗である。a-3i:H row VCa-8i manufactured in this way
The first and second light receiving elements (3a
) (3c) are connected in series, the fourth
It can be inserted into a circuit diagram as shown in the figure. That is, the light receiving elements (3a) (30) are connected to the DC current sources (10a) (IO
C) and a diode (ilaBiic) in an antiparallel circuit. In the same figure, vci is 0, which is the output terminal σ
The next load resistor is connected between the wires.
而して、第１の発光素子（２ａ）に電気信号が給電され
ると、該第１の発光素子（２ａ）は５６ｓｎｍの緑色光
を発光し絶縁基板（１）を伝搬して対向する受光のピー
クが５８０１ｍの第１の受光素子（６ａ）を光照射する
。光照射された第１の受ｆｆｉ素子（５ａ ）はその受
光のピーク波長と発光素子（２ａ）の発光波長とが略一
致１−る結果、当該透明電極膜（７）並びに金属電極膜
（９）間に光起電力を発生せしめる。ところが第２の発
光素子（２Ｃ）が発光動作にない状態に於いては、第２
の受光素子（３０）Ｋ第１の発光素子（２ａ）の緑色光
の一部が散乱により入射し℃も該第２の受ｙｔ素子（６
Ｃ）の受光のピーク波長と発光波長とが大きく異なるた
めに、第２の受光素子（６Ｃ）は光起電力を発生するに
至らず上記第１の受光素子（３ａ〕の直流電流＃（１０
ａ）と逆方向のダイオード（ｉｉｃ）状態にある。従っ
て、負荷抵抗（Ｒ）ｖｃは充電流が流れず出力端子Ｕク
ロＪ間には出力が得られない。Then, when an electric signal is supplied to the first light emitting element (2a), the first light emitting element (2a) emits green light of 56 snm, propagates through the insulating substrate (1), and receives the opposite light. The first light receiving element (6a) with a peak of 5801 m is irradiated with light. The peak wavelength of the light received by the first ffi element (5a) that is irradiated with the light and the emission wavelength of the light emitting element (2a) approximately match, so that the transparent electrode film (7) and the metal electrode film (9) ) to generate a photovoltaic force between them. However, when the second light emitting element (2C) is not in the light emitting operation, the second light emitting element (2C)
A part of the green light from the first light emitting element (2a) enters the light receiving element (30) K due to scattering, and the temperature also decreases to 30°C.
Since the peak wavelength of light reception and the emission wavelength of C) are significantly different, the second light receiving element (6C) does not generate a photovoltaic force and the DC current #(10
It is in a diode (IIC) state in the opposite direction to a). Therefore, no charging current flows through the load resistor (R)vc, and no output is obtained between the output terminals U and J.
一方、この状態で第２の発光素子（２Ｃ）を発光せしめ
ると、該第２の発光素子（２Ｃ）は第２の受光素子Ｃｏ
ｏ）の受光のピーク波長６８０ｎｍと略等しい７００ｎ
ｍの赤色光を発光する結果、第２の受光素子（３Ｃ）は
逆方向のダイオード（１１Ｃ）状態から順方向の直流電
流源（ｉｐｃ）となシ、負荷抵抗０に光電ｊ瓦が流れ、
出力端子Ｌ］２１１１３１間に出力信号が得られる。こ
の様ＶＣ２個の受光素子（３ａ、）［０）を直列接続し
、夫々の屯気（入力）信号〆こ対して独立して発光動作
する２個の発光素子（２ａ）（２ｃＪ＆対向せしめるこ
とｆ（山って、出力信号として入力信号Ｑ−理積を得る
ことができる。On the other hand, when the second light emitting element (2C) is caused to emit light in this state, the second light emitting element (2C) is connected to the second light receiving element Co.
700n, which is approximately equal to the peak wavelength of light reception of o), 680nm.
As a result of emitting red light of m, the second light receiving element (3C) changes from the reverse direction diode (11C) state to the forward direction direct current source (IPC), and a photoelectric current flows through the load resistance 0.
An output signal is obtained between the output terminals L]211131. In this way, the two VC light receiving elements (3a,) [0) are connected in series, and the two light emitting elements (2a) (2cJ&) that operate independently to emit light in response to the respective air (input) signals are made to face each other. f(mountain), the input signal Q-reason can be obtained as an output signal.
同、第２の発光素子（２Ｃ）のみが発光動作し℃も第１
の受光素子（６ａ〕は受光のピーク波長と発光波長が大
きく異なると共に、発光（辻の一部のみしか入射しない
ためＶＣ逆方向のダイオード（１１ａ）状態どなる。In the same case, only the second light emitting element (2C) operates to emit light, and the temperature is also the same as that of the first one.
In the light-receiving element (6a), the peak wavelength of light reception and the wavelength of light emission are greatly different, and the light emission (only a part of the crossroads) is incident, so the state of the diode (11a) in the opposite direction of VC changes.
（へ） 発明の効果
本発明は以上の説明からり］らかな卯く、各々光学的に
結合する第１の発光・受光素子並びＶＣ第２の発光・受
光素子は、夫々異なる第１の波長及び第２の波長を介し
て光結合するので、隣接する光結合対の光が相互に干渉
することはなくクロストーク？防止することができ、祈
るクロストークを原因とする誤動作を確冥に抑圧するこ
とができる０(f) Effects of the Invention The present invention is based on the above explanation] The first light emitting/light receiving element and the VC second light emitting/light receiving element each having a different first wavelength are optically coupled to each other. Since the light is optically coupled via the second wavelength, the lights of adjacent optically coupled pairs do not interfere with each other, resulting in crosstalk. It is possible to prevent malfunctions caused by crosstalk.
第１図は従来例の断面図、第２因に七の要部平面図、第
６図は本発明の実施例断面図、第４図はその等価回路図
で、（１）は絶縁基板、（２ａ）（２Ｃ）は第１・第２
の発光素子、（５ａ ）（６Ｃ）は第１・第２の受光素
子％（８）はアモルファスシリコン層、（８０）！Ｊア
モルファスシリコンゲルマニウム層、を夫々示している
。Fig. 1 is a sectional view of the conventional example, secondly, a plan view of the main part of the seventh factor, Fig. 6 is a sectional view of the embodiment of the present invention, and Fig. 4 is its equivalent circuit diagram, (1) is an insulating substrate, (2a) (2C) are the first and second
(5a) (6C) are first and second light receiving elements (8) are amorphous silicon layers, (80)! J amorphous silicon germanium layer.
Claims (1)
ファス半導体を含む第１の受光素子と、第２の波長に受
光のピークが存在するアモルファス半導体？含む第２の
受光素子と、略第１の波長並びに第２の波長の光な夫々
独立した電気信号に基づき放射する第１・第２の発光素
子と、？具備し、上記両受光素子並びに両発元素子を各
々光伝搬媒体の同一面に並置すると共に、波長が略ｌし
い受光flj A first light receiving element including an amorphous semiconductor whose light reception peak exists at a first wavelength, and an amorphous semiconductor whose light reception peak exists at a second wavelength? a second light-receiving element including a second light-receiving element, and first and second light-emitting elements that emit light of approximately the first wavelength and the second wavelength based on independent electrical signals, respectively; The two light-receiving elements and the two light-emitting elements are arranged side by side on the same surface of the light propagation medium, and the light receiving element has a substantially different wavelength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57225465A JPS59114877A (en) | 1982-12-21 | 1982-12-21 | Semiconductor photo coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57225465A JPS59114877A (en) | 1982-12-21 | 1982-12-21 | Semiconductor photo coupler |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59114877A true JPS59114877A (en) | 1984-07-03 |
Family
ID=16829745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57225465A Pending JPS59114877A (en) | 1982-12-21 | 1982-12-21 | Semiconductor photo coupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59114877A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10848152B2 (en) | 2018-03-15 | 2020-11-24 | Analog Devices Global Unlimited Company | Optically isolated micromachined (MEMS) switches and related methods comprising a light transmitting adhesive layer between an optical receiver and a light source |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5158086A (en) * | 1974-11-18 | 1976-05-21 | Mitsubishi Electric Corp | |
| JPS5193176A (en) * | 1975-02-13 | 1976-08-16 |
-
1982
- 1982-12-21 JP JP57225465A patent/JPS59114877A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5158086A (en) * | 1974-11-18 | 1976-05-21 | Mitsubishi Electric Corp | |
| JPS5193176A (en) * | 1975-02-13 | 1976-08-16 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10848152B2 (en) | 2018-03-15 | 2020-11-24 | Analog Devices Global Unlimited Company | Optically isolated micromachined (MEMS) switches and related methods comprising a light transmitting adhesive layer between an optical receiver and a light source |
| US11228310B2 (en) | 2018-03-15 | 2022-01-18 | Analog Devices Global Unlimited Company | System comprising a package having optically isolated micromachined (MEMS) switches with a conduit to route optical signal to an optical receiver and related methods |
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