JPH01175775A - Photo-driven mos semiconductor device - Google Patents

Photo-driven mos semiconductor device

Info

Publication number
JPH01175775A
JPH01175775A JP33591387A JP33591387A JPH01175775A JP H01175775 A JPH01175775 A JP H01175775A JP 33591387 A JP33591387 A JP 33591387A JP 33591387 A JP33591387 A JP 33591387A JP H01175775 A JPH01175775 A JP H01175775A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
semiconductor device
formed
photo
mos semiconductor
photodetectors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33591387A
Inventor
Yoshiaki Nozaki
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To enhance the efficiency of photosensitivity of a photo-sensitive section, to shorten the charging time of the gate capacitance of a MOS FET and to produce a photo-driven MOS FET which may respond at a high speed, by a structure wherein a plurality of photodetectors are laminated on the main surface of a MOS semiconductor device through insulating films, respectively, in a multilayer.
CONSTITUTION: Photodetectors 2 are laminated on the main surface of a MOS semiconductor device 1, and the MOS semiconductor device 1 is driven by utilizing the photoelectromotive force which is generated by the photodetectors 2. In such a photo- driven MOS semiconductor device, the plurality of photodetectors 2 are laminated on the main surface of the MOS semiconductor device 1 through insulating films 19, respectively, in a multilayer. For example, after an n- type epitaxial layer 4 is grown on an n+ type substrate 3, a p- type well diffusion layer 5 is formed. Subsequently, a gate oxide film 7 is formed on the epitaxial layer 4, and a gate electrode 8 is then formed thereon. Further, an n+ type diffusion layer 6 is formed, and thereby a vertical MOS FET is completed. Next, after an SiO2 film 14 is deposited on the surface of the epitaxial layer 4 over which the gate electrode 8 is formed, two layers of photodiode sections 2 are formed in a laminated construction.
COPYRIGHT: (C)1989,JPO&Japio
JP33591387A 1987-12-29 1987-12-29 Photo-driven mos semiconductor device Pending JPH01175775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33591387A JPH01175775A (en) 1987-12-29 1987-12-29 Photo-driven mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33591387A JPH01175775A (en) 1987-12-29 1987-12-29 Photo-driven mos semiconductor device

Publications (1)

Publication Number Publication Date
JPH01175775A true true JPH01175775A (en) 1989-07-12

Family

ID=18293767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33591387A Pending JPH01175775A (en) 1987-12-29 1987-12-29 Photo-driven mos semiconductor device

Country Status (1)

Country Link
JP (1) JPH01175775A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009034731A1 (en) * 2007-09-12 2009-03-19 Unisantis Electronics (Japan) Ltd. Solid-state imaging element
WO2009133957A1 (en) * 2008-05-02 2009-11-05 日本ユニサンティスエレクトロニクス株式会社 Solid-state image pickup element
US8097907B2 (en) 2008-05-02 2012-01-17 Unisantis Electronics Singapore Pte Ltd. Solid-state imaging device
US8330089B2 (en) 2007-09-12 2012-12-11 Unisantis Electronics Singapore Pte Ltd. Solid-state imaging device
US8372713B2 (en) 2008-01-29 2013-02-12 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
JP5350795B2 (en) * 2007-09-12 2013-11-27 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. The solid-state imaging device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9035384B2 (en) 2011-12-19 2015-05-19 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8330089B2 (en) 2007-09-12 2012-12-11 Unisantis Electronics Singapore Pte Ltd. Solid-state imaging device
WO2009034623A1 (en) * 2007-09-12 2009-03-19 Unisantis Electronics (Japan) Ltd. Solid-state image sensor
JP5350795B2 (en) * 2007-09-12 2013-11-27 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. The solid-state imaging device
US7872287B2 (en) 2007-09-12 2011-01-18 Unisantis Electronics (Japan) Ltd. Solid-state imaging device
JP4793493B2 (en) * 2007-09-12 2011-10-12 日本ユニサンティスエレクトロニクス株式会社 The solid-state image sensor and its drive method and solid-state imaging device matrix
WO2009034731A1 (en) * 2007-09-12 2009-03-19 Unisantis Electronics (Japan) Ltd. Solid-state imaging element
US8372713B2 (en) 2008-01-29 2013-02-12 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8097907B2 (en) 2008-05-02 2012-01-17 Unisantis Electronics Singapore Pte Ltd. Solid-state imaging device
WO2009133957A1 (en) * 2008-05-02 2009-11-05 日本ユニサンティスエレクトロニクス株式会社 Solid-state image pickup element
US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9035384B2 (en) 2011-12-19 2015-05-19 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9245889B2 (en) 2011-12-19 2016-01-26 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9362353B2 (en) 2011-12-19 2016-06-07 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9478545B2 (en) 2011-12-19 2016-10-25 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9748244B2 (en) 2011-12-19 2017-08-29 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9806163B2 (en) 2011-12-19 2017-10-31 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device having an nMOS SGT and a pMOS SGT

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