JPS61182273A - Multi-wavelength light-receiving element - Google Patents
Multi-wavelength light-receiving elementInfo
- Publication number
- JPS61182273A JPS61182273A JP60022012A JP2201285A JPS61182273A JP S61182273 A JPS61182273 A JP S61182273A JP 60022012 A JP60022012 A JP 60022012A JP 2201285 A JP2201285 A JP 2201285A JP S61182273 A JPS61182273 A JP S61182273A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layers
- layers
- type
- semiconductor layer
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000002955 isolation Methods 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000000926 separation method Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
Abstract
Description
【発明の詳細な説明】
（発明の技術分野）
本発明は複数波長分離用半導体受光素子に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION (Technical Field of the Invention) The present invention relates to a semiconductor light receiving element for separating multiple wavelengths.
（従来技術とその問題点）
従来、この種の装置は２種類のＰＮ接合フォトダイオ−
「を積層して構成されていた。例えば、特願昭５８−２
２２７５０号「半導体受光素子およびその製造方法」に
示されている素子について、第１図に従って述べる。半
絶縁性半導体基板１上に順次積層されたｎ形半導体層２
．’３．４と、半導体層２゜４内に形成されたｐ形半導
体Ｍ域５，６で構成されており、半導体層２．５および
半導体層４，６で構成される２種類のｐｎ接合ダイオー
ドが積層されている。これらのダイオードにはそれぞれ
ｐ形電極８．９および共通ｎ形電極１０が絶縁膜７．１
７を介して設けられている。ここで半導体層４は半導体
層２よりも大きいバンドギャップエネルギを有する材料
が選ばれる。これを動作させるには、素子表面より２種
類の波長より構成される光信号１１を入射し、２種類の
光信号のうち短波長側の光信号による電気信号を電極９
，１０より、また長波長側の光信号による電気信号を電
極８．１０よりそれぞれ取り出すものである。(Prior art and its problems) Conventionally, this type of device uses two types of PN junction photodiodes.
For example, patent application No. 58-2
The device shown in No. 22750, “Semiconductor light-receiving device and its manufacturing method” will be described with reference to FIG. N-type semiconductor layers 2 sequentially stacked on a semi-insulating semiconductor substrate 1
．． '3.4, and p-type semiconductor M regions 5 and 6 formed within the semiconductor layer 2. Diodes are stacked. These diodes each have a p-type electrode 8.9 and a common n-type electrode 10 connected to the insulating film 7.1.
7. Here, a material having a larger bandgap energy than the semiconductor layer 2 is selected for the semiconductor layer 4. To operate this, an optical signal 11 composed of two types of wavelengths is input from the element surface, and an electrical signal based on the optical signal on the shorter wavelength side of the two types of optical signals is transmitted to the electrode 9.
, 10, and electrical signals based on optical signals on the longer wavelength side are extracted from electrodes 8 and 10, respectively.
従来装置はこのように構成されていたので、分離波長数
は２種類に限定されていた。さらに、ｎ形電極１０を２
種類のダイオードに共通にしているため、電気的分離度
が悪くなる欠点があった。Since the conventional device was configured in this way, the number of separation wavelengths was limited to two types. Furthermore, the n-type electrode 10 is
Since it is common to all types of diodes, it has the disadvantage of poor electrical isolation.
（発明の目的）
本発明はこれらの欠点を除去するため、フォトコンダク
タ形の受光素子を積層し、分離波長数も２種類以上とな
るようにした多波長受光素子を提供するものである。(Object of the Invention) In order to eliminate these drawbacks, the present invention provides a multi-wavelength light receiving element in which photoconductor type light receiving elements are stacked and the number of separated wavelengths is two or more.
（発明の構成と作用） 以下本発明の詳細な説明する。(Structure and operation of the invention) The present invention will be explained in detail below.
第２図は本発明の実施例である。半絶縁性ＩｎＰ基板２
１上にｎ形ＩｎＧａＡｓＰ層（バンドギャップＥｌ）２
２、ｎ形１ｎＧａＡｓＰ層（バンドギャップＥｚ） ２
３． ｎ形ＩｎＧａＡｓＰ層（ハンドギヤツブＥ３）
２４が積層されており、それぞれの半導体層にはオー
ミック電極２５、２６．２７がそれぞれ対で設けられて
いる。ここで、半導体層２２．２３．２４はそれぞれの
バンドギャップの大きさがＥｌ＜Ｅ２＜Ｅ３の関係にな
るように組成を調整する。FIG. 2 shows an embodiment of the invention. Semi-insulating InP substrate 2
n-type InGaAsP layer (bandgap El) on 1
2, n-type 1nGaAsP layer (band gap Ez) 2
3. n-type InGaAsP layer (hand gear tube E3)
24 are stacked, and each semiconductor layer is provided with a pair of ohmic electrodes 25, 26, and 27, respectively. Here, the composition of the semiconductor layers 22, 23, and 24 is adjusted so that the respective band gaps satisfy the relationship El<E2<E3.
次に、これを動作させるには半導体層２４の側より、そ
れぞれのエネルギがＥ Ｉ’ ＋ Ｅ２’ Ｉ Ｂ３′
である３種類の光信号よりなる光２８を入射させる。Next, in order to operate this, each energy is E I' + E2' I B3' from the semiconductor layer 24 side.
Light 28 consisting of three types of optical signals is made incident.
この際、Ｅ＋’ 、 Ｅ２’ 、 Ｅ３’ は第３図に
示すような関係にある。従って、Ｅ ３Ｊ の光は半導
体層２２．２３゜２４で、Ｅ２′ の光は２２．２３で
、Ｅ１′ の光は２２でそれぞれ吸収される。ここで、
半導体層２４はＥ３′ の光を十分に吸収できるように
厚さが設定されており、同様に半導体層２３はＥ２’
の光を十分に吸収できるようになされている。このため
、Ｅ３′ の光は２４で吸収され、電気信号として電極
端子２７から、同様にＢ、ｒ の光は、電極端子２６か
ら、ＥＩ′ の光は電極端子２５からそれぞれ取り出さ
れる。このようにして、光子エネルギの異なるＥ Ｉ’
＋ Ｅ２’ ＋ Ｅ３’ の３種類の光信号よりなる
光を、それぞれ分離して電気信号として取り出すことが
できる。ここでは、３種類の異なる光子エネルギからな
る光を分離させる場合について説明したが、４種類以上
の場合においても、さらに半導体層を付加していくこと
により、３種類の場合と同様にして分離することができ
る。At this time, E+', E2', and E3' have a relationship as shown in FIG. Therefore, the light of E 3J is absorbed by the semiconductor layer 22.23°24, the light of E2' is absorbed by the semiconductor layer 22.23, and the light of E1' is absorbed by the semiconductor layer 22. here,
The thickness of the semiconductor layer 24 is set so that it can sufficiently absorb the light of E3', and similarly the semiconductor layer 23 has a thickness of E2'.
It is designed so that it can absorb enough light. Therefore, the E3' light is absorbed by the electrode terminal 24, and the B and r lights are extracted from the electrode terminal 26 as electrical signals, and the EI' light is extracted from the electrode terminal 25. In this way, E I' with different photon energies
The light consisting of the three types of optical signals +E2' + E3' can be separated and extracted as electrical signals. Here, we have explained the case where light consisting of three different photon energies is separated, but even in the case of four or more types, by adding more semiconductor layers, it can be separated in the same way as in the case of three types. be able to.
本装置は上記のような構造になっており、多層半導体層
の各層に電極端子を取り付けるだけでよいため、製作が
容易である。このことは、ｐｎ接合形フォトダイオード
を積層した従来装置に比べると大きな利点である。また
、特性上からは分離度が良くなる利点をあげることがで
きる。すなわち、半導体層２２．２３．２４は積層され
ているが、電気的には互いに分離されている。このため
、電気信号レベルでの他電気端子への漏れを抑圧するこ
とができ、分離度が良くなるわけである。This device has the above-described structure, and is easy to manufacture because it is only necessary to attach electrode terminals to each layer of the multilayer semiconductor layer. This is a great advantage compared to conventional devices in which pn junction photodiodes are stacked. In addition, from the viewpoint of characteristics, it has the advantage of improving the degree of separation. That is, although the semiconductor layers 22, 23, and 24 are stacked, they are electrically separated from each other. Therefore, leakage to other electrical terminals at the electrical signal level can be suppressed, and the degree of isolation is improved.
以上の説明においては、半導体層２２．２３．２４はｎ
形であるが、ｐ形についても同様になる。さらに、キャ
リヤの数が極めて少ない高抵抗の半導体層であっても良
い。In the above description, the semiconductor layers 22, 23, 24 are n
The same applies to the p-type. Furthermore, it may be a high-resistance semiconductor layer with an extremely small number of carriers.
（発明の効果）
以上説明したように、本装置は構造が簡単であるため製
作が容易であるばかりでなく、光信号の数を３種類以上
に容易に増加することができ、かつ、信号分離度も良く
することができる等の利点がある。(Effects of the Invention) As explained above, this device has a simple structure, so it is not only easy to manufacture, but also allows for easy increase in the number of optical signals to three or more types, as well as signal separation. It has the advantage of being able to improve the temperature.
第１図は従来のｐｎ接合フォトダイオードを２種類積層
した装置の断面図、第２図は本発明装置の一実施例を示
す斜視図、第３図は分光感度特性図である。
■・・・半絶縁性半導体基板、 ２’、３．４・・・ｎ
形半導体層、 ５，６・・・ｎ形半導体層、 ７，１７
・・・絶縁膜、 ８．９・・・ｐ形電極、 １０・・・
ｎ形電極、 １１・・・入射光信号、 ２１・・・半絶
縁性半導体基板、 ２２．２３．２４・・・半導体層、
２５．２６．２７・・・電極端子、 ２８・・・入射
光信号、 ３１・・・半導体層２４の分光感度特性曲線
、 ３２・・・半導体層２３の分光感度特性曲線、 ３
３・・・半導体層２２の分光感度特性曲線。FIG. 1 is a sectional view of a conventional device in which two types of pn junction photodiodes are stacked, FIG. 2 is a perspective view showing an embodiment of the device of the present invention, and FIG. 3 is a spectral sensitivity characteristic diagram. ■...Semi-insulating semiconductor substrate, 2', 3.4...n
type semiconductor layer, 5, 6... n type semiconductor layer, 7, 17
...Insulating film, 8.9...P-type electrode, 10...
N-type electrode, 11... Incident optical signal, 21... Semi-insulating semiconductor substrate, 22.23.24... Semiconductor layer,
25.26.27... Electrode terminal, 28... Incident optical signal, 31... Spectral sensitivity characteristic curve of semiconductor layer 24, 32... Spectral sensitivity characteristic curve of semiconductor layer 23, 3
3... Spectral sensitivity characteristic curve of the semiconductor layer 22.
Claims (1)
る半導体層が少なくとも２層以上積層され、かつ当該半
導体層が、それらのバンドギャップが基板側から順次大
きくなるように配置されており、さらに第１の導電形を
有するそれぞれの半導体層に各々分離された二電極を設
けたことを特徴とする多波長受光素子。At least two or more semiconductor layers having a first conductivity type are laminated on a semi-insulating first semiconductor substrate, and the semiconductor layers are arranged such that their band gaps gradually increase from the substrate side. A multi-wavelength light-receiving element, further comprising two separate electrodes provided on each semiconductor layer having a first conductivity type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60022012A JPS61182273A (en) | 1985-02-08 | 1985-02-08 | Multi-wavelength light-receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60022012A JPS61182273A (en) | 1985-02-08 | 1985-02-08 | Multi-wavelength light-receiving element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61182273A true JPS61182273A (en) | 1986-08-14 |
Family
ID=12071084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60022012A Pending JPS61182273A (en) | 1985-02-08 | 1985-02-08 | Multi-wavelength light-receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61182273A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03227578A (en) * | 1989-03-03 | 1991-10-08 | Mitsubishi Electric Corp | Optical element apparatus |
| WO2001065931A1 (en) | 2000-03-06 | 2001-09-13 | Fumakilla Limited | Fan type chemicals diffusing device |
-
1985
- 1985-02-08 JP JP60022012A patent/JPS61182273A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03227578A (en) * | 1989-03-03 | 1991-10-08 | Mitsubishi Electric Corp | Optical element apparatus |
| WO2001065931A1 (en) | 2000-03-06 | 2001-09-13 | Fumakilla Limited | Fan type chemicals diffusing device |
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