JPS59112963U - 輻射波検出素子 - Google Patents
輻射波検出素子Info
- Publication number
- JPS59112963U JPS59112963U JP1983112710U JP11271083U JPS59112963U JP S59112963 U JPS59112963 U JP S59112963U JP 1983112710 U JP1983112710 U JP 1983112710U JP 11271083 U JP11271083 U JP 11271083U JP S59112963 U JPS59112963 U JP S59112963U
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- detection element
- wave detection
- type
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1983112710U JPS59112963U (ja) | 1983-07-20 | 1983-07-20 | 輻射波検出素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1983112710U JPS59112963U (ja) | 1983-07-20 | 1983-07-20 | 輻射波検出素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59112963U true JPS59112963U (ja) | 1984-07-30 |
JPH0219976Y2 JPH0219976Y2 (enrdf_load_html_response) | 1990-05-31 |
Family
ID=30261191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1983112710U Granted JPS59112963U (ja) | 1983-07-20 | 1983-07-20 | 輻射波検出素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59112963U (enrdf_load_html_response) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000340848A (ja) * | 1999-03-24 | 2000-12-08 | Ishizuka Electronics Corp | サーモパイル型赤外線センサ及びその製造方法 |
-
1983
- 1983-07-20 JP JP1983112710U patent/JPS59112963U/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000340848A (ja) * | 1999-03-24 | 2000-12-08 | Ishizuka Electronics Corp | サーモパイル型赤外線センサ及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0219976Y2 (enrdf_load_html_response) | 1990-05-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS60111123A (ja) | 赤外線検出器とその製造方法 | |
JP2847970B2 (ja) | ガスセンサおよびその製造方法 | |
JPS59112963U (ja) | 輻射波検出素子 | |
GB1320111A (en) | Thermistor and method of manufacturing same | |
JP2674346B2 (ja) | ジョセフソン素子及びその製造方法 | |
JPS63110778A (ja) | 熱電素子の製造方法 | |
JPS5546187A (en) | Infrared ray detection element of photo electromotive force type | |
JPH0676917B2 (ja) | 焦電型赤外線アレイセンサ | |
JPS59109164U (ja) | 半導体装置 | |
JPS6170394U (enrdf_load_html_response) | ||
JPS59112944U (ja) | 集積回路 | |
JPS57160156A (en) | Semiconductor device | |
KR880001537B1 (ko) | 반도체소자의 격리층 제조방법 | |
JPS6329966U (enrdf_load_html_response) | ||
JPS5633855A (en) | Semiconductor device and its manufacture | |
JPH0194227A (ja) | 焦電検出装置とその製造方法 | |
JPS6122370U (ja) | 光起電力素子 | |
JPS5575243A (en) | Method of fabricating mis semiconductor device having two-layer polycrystalline silicon wired layer | |
JPH0316328U (enrdf_load_html_response) | ||
JPS5897853U (ja) | 半導体装置 | |
JPS64349U (enrdf_load_html_response) | ||
JPS5860951U (ja) | 半導体装置 | |
JPS5839062U (ja) | 半導体装置 | |
JPS58102566A (ja) | 半導体圧力変換器 | |
JPS58162082A (ja) | サ−モパイル素子 |